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MT46H64M32LFMA-5WT:B

Micron Technology

MT46H64M32LFMA-5WT:B by Micron Technology

Micron Technology's MT46H64M32LFMA-5WT:B is a DDR1 DRAM with 64MX32 organization, operating at 200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring fast access times and high memory density.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,473 parts In-Stock

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7,473

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Chip Stock

USA . 4,729 parts In-Stock

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4,729

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Digiode

USA . 2,007 parts In-Stock

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2,007

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 5,666 parts In-Stock

1+ parts

$3.183

100+ parts

-

1k+ parts

$3.055

10k+ parts

$3.055

5,666

$3.183

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$3.055

$3.055

AZTECH Wire

Italy . 153 parts In-Stock

1+ parts

$10.820

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153

$10.820

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Ampacity Inc.

Singapore . 1,146 parts In-Stock

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$15.000

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1,146

$15.000

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A-Z Elektronik GmbH

Germany . 6,333 parts In-Stock

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6,333

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Continental Prestige Electronics

USA . 4,391 parts In-Stock

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Argo Parts USA

USA . 1,412 parts In-Stock

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1,412

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Aranea Global

USA . 500 parts In-Stock

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500

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Corphita

USA . 366 parts In-Stock

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366

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Kepictronics

USA . 350 parts In-Stock

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350

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Microchip USA

USA . 292 parts In-Stock

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292

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Overview

Elevate your electronics with the MT46H64M32LFMA-5WT:B by Micron Technology, a cutting-edge DRAM that delivers unparalleled performance and reliability. Crafted by industry-leading experts, this memory module excels in a variety of applications, from gaming to data processing. Experience seamless operation and lightning-fast speeds with this innovative product, designed to exceed expectations and elevate your user experience. Upgrade your devices today with Micron Technology's superior quality and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for a variety of applications.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing control, ensuring data is transferred accurately and efficiently.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a nominal supply voltage of 1.8V offers a good balance between performance and power efficiency.

No. of Terminals: 168

Having a high number of terminals allows for effective connectivity and data transfer capabilities.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand demanding environmental conditions.

Memory Width: 32

A memory width of 32 bits provides ample data processing capabilities for faster performance.

Technology: CMOS

Being based on CMOS technology ensures low power consumption and high performance efficiency.

Refresh Cycles: 8192

A high number of refresh cycles ensures data integrity and reliability over extended periods of use.

Technical Specifications

DRAM MT46H64M32LFMA-5WT:B attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

2,4,8,16

JESD-30 Code:

S-PBGA-B168

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

168

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

64MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA168,23X23,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

.7 mm

Self Refresh:

YES

Sequential Burst Length:

2,4,8,16

Maximum Standby Current:

.00001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

150 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

12 mm

Trade Compliance

MT46H64M32LFMA-5WT:B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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