Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Moisture Sensitivity Level (MSL): 1; Maximum Collector-Emitter Voltage: 1700 V;
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$1,511.620
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Northwest PG Solutions
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Insulated Gate Bipolar Transistors (IGBT) FZ3600R17HE4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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FZ3600R17HE4 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
1N4148
ROHM
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
M39029/56351
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/56351 is a CRIMP contact type backshell accessory compliant with MIL-DTL-38999. It features FEMALE gender contacts, compatible with M39029/58363 mating contacts. The insertion and removal tools required are M81969/14-10 and M22520/2-10 respectively, making it ideal for military connector applications.
Vishay Intertechnology
CGA3E2X7R1H104K080AA
TDK
CGA3E2X7R1H104K080AA by TDK is a fixed ceramic capacitor with a capacitance of 0.1 uF and a rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate at temperatures ranging from -55 to 125 °C. This capacitor is commonly used in surface mount applications for various electronic devices.
261
Micronetics
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
2N7002
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS138DW-7-F
Diodes Incorporated
BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
Baneasa S A
SMBJ18CA
Sangdest Microelectronics (Nanjing)
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Vishay Intertechnology's SMBJ18CA is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max clamping voltage of 29.2 V and a breakdown voltage of 21.05 V. It is surface mountable and commonly used in transient suppression applications.
1N4148WT-7
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
Excel (Suzhou) Semiconductor
1N4148WS
Onsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Formosa Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;
STM32H743BIT6
STMicroelectronics
STM32H743BIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 208 terminals, and 1085440 bytes of RAM. It features 2 DAC channels, 32 ADC channels, and operates at a max clock frequency of 48 MHz. Ideal for industrial applications requiring high-speed processing and extensive peripheral connectivity.
2N2222A
Texas Instruments
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
SPC TECHNOLOGY/ MULTICOMP
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
NGTB20N120IHRWG
NGTB20N120IHRWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 40A IC, and 384W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
HGTG40N60B3
Intersil
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Terminal Position: SINGLE;
FF900R12IE4BOSA1
FF900R12IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 900A. Ideal for power control applications due to its fast turn on time of 350ns and turn off time of 940ns at a max operating temperature of 175°C.
SGL50N60RUFDTU
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 80 A; Package Body Material: PLASTIC/EPOXY;
FGH60N60SMD_F085
Fairchild Semiconductor's FGH60N60SMD_F085 is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 66ns ton. Ideal for power control applications, it features a single configuration with built-in diode in a plastic/epoxy package. The transistor has a nominal turn-off time of 139ns and meets AEC-Q101 standards.
HGTG20N60A4D
HGTG20N60A4D by Onsemi is an N-CHANNEL IGBT with 600V VCE, 70A IC, and 28ns ton. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temperature of 150°C in a RECTANGULAR package style.
IGB50N60TXT
IGB50N60TXT by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. This insulated gate bipolar transistor comes in a surface-mount package with GULL WING terminals, suitable for high-power electronic systems operating at temperatures up to 175°C.
IKZ75N65EL5XKSA1
IKZ75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 100A IC, and 536W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.35V and fast switching times (ton:133ns, toff:474ns). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
IRG4BC30FD-SPBF
IRG4BC30FD-SPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 31A max collector current. It has a built-in diode, 620ns turn-off time, and 100W power dissipation. Ideal for power control applications requiring fast switching capabilities in surface mount configurations.
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and current of 995A, making it ideal for POWER CONTROL applications. With a turn off time of 770ns and turn on time of 310ns, this rectangular package transistor operates at temperatures up to 175°C.
FS200R12KT4RBOSA1
Infineon's FS200R12KT4RBOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 280A, and turn-off time of 600ns. Ideal for power control applications due to its UL recognized standard and operating temperature up to 175°C.
CM600DU-24NFH
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; No. of Terminals: 7; Transistor Application: POWER CONTROL;
IRG7PH50K10DPBF
International Rectifier
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 90 A; Maximum Fall Time (tf): 110 ns; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
SKM400GB125D
Semikron International
Semikron International's SKM400GB125D is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 3.85V and Max IC of 400A, it operates at up to 150°C with a VCE of 1200V. This RECTANGULAR package has 7 terminals and meets IEC-60747-1 & UL standards.
ISL9V3040D3ST
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Package Style (Meter): SMALL OUTLINE;
FS75R12KS4BOSA1
Infineon FS75R12KS4BOSA1 is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. Features include 1200V max collector-emitter voltage, 100A max collector current, and 390ns turn off time. Ideal for high-power applications requiring fast switching such as motor drives and inverters.
IKW20N60TFKSA1
IKW20N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a turn-off time of 299ns and turn-on time of 36ns, suitable for high-power switching in various industries.
IKA10N65ET6XKSA2
IKA10N65ET6XKSA2 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max IC of 25A. It is designed for POWER CONTROL applications, featuring a package style of FLANGE MOUNT and an operating temperature range from -40 to 175 °C.
APT150GN120JDQ4
Microchip Technology
Microchip Technology's APT150GN120JDQ4 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 215A, and Ptot of 625W. Ideal for power control applications due to its fast turn-off time (toff) of 955ns and high collector-emitter voltage rating of 1200V. Package style is flange mount with isolated case connection.
HGTP10N120BN
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; Transistor Application: MOTOR CONTROL;
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FZ3600R12HP4HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 4930 A; No. of Elements: 3; Nominal Turn Off Time (toff): 1550 ns;
FZ3600R17HP4HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Terminal Form: UNSPECIFIED; No. of Terminals: 3; Moisture Sensitivity Level (MSL): 1;
FZ3600R17HE4HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Terminal Form: UNSPECIFIED; No. of Terminals: 9; Case Connection: ISOLATED;
FZ3600R17KE3
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 18000 W; Maximum Collector Current (IC): 4800 A; Package Body Material: UNSPECIFIED;
FZ3600R17HP4HOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn Off Time (toff): 2095 ns; Case Connection: ISOLATED; Nominal Turn On Time (ton): 1075 ns;
FZ3600R17HE4NPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Body Material: UNSPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Case Connection: ISOLATED;
FZ3600R12HP4HOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 4930 A; No. of Elements: 3; No. of Terminals: 9;
FZ3600R17KE3_B2
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20000 W; Maximum Collector Current (IC): 4800 A; Terminal Position: UPPER;
FZ3600R12KE3
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 14800 W; Maximum Collector Current (IC): 4700 A; No. of Elements: 3;
FZ3600R17HE4PHPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Terminals: 9; Transistor Application: POWER CONTROL; Minimum Operating Temperature: -40 Cel;
FZ3600R17HP4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 21000 W; Maximum Collector Current (IC): 3600 A; Nominal Turn On Time (ton): 1075 ns;
FZ3600R12KE3NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 4700 A; Qualification: Not Qualified; JESD-30 Code: R-XUFM-X9;
FZ3600R17HP4_B2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 21000 W; Maximum Collector Current (IC): 3600 A; Nominal Turn Off Time (toff): 2095 ns;
FZ3600R17HP4NPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED; Case Connection: ISOLATED;
FZ3600R12HP4NPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 4930 A; Terminal Form: UNSPECIFIED; Maximum Operating Temperature: 175 Cel;
FZ3600R17HE4P
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Nominal Turn On Time (ton): 1075 ns; No. of Elements: 3;
FZ3600R12HP4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 19000 W; Maximum Collector Current (IC): 4930 A; Transistor Element Material: SILICON;
FZ3600R17HP4B2BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Terminal Position: UPPER; No. of Terminals: 9; Package Body Material: UNSPECIFIED;
FZ3600R17HP4B2BOSA2
N-Channel; Maximum Power Dissipation (Abs): 19500 W; Nominal Turn Off Time (toff): 2095 ns; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum VCEsat: 2.25 V; Maximum Operating Temperature: 150 Cel;
Eupec & Kg
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 4800 A; Nominal Turn Off Time (toff): 2100 ns; No. of Elements: 3;
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