Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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PMV30XN,215
NXP Semiconductors
PMV30XN,215 by NXP Semiconductors is an N-channel FET designed for efficient switching applications. It features a max drain current of 3.2 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.
SINGLE WITH BUILT-IN DIODE
20 V
3.2 A
.035 ohm
METAL-OXIDE SEMICONDUCTOR
TO-236AB
R-PDSO-G3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
.52 W
IEC-60134
FET General Purpose Power
YES
TIN
GULL WING
DUAL
30
SWITCHING
SILICON
PMDPB38UNE,115
NXP Semiconductors' PMDPB38UNE,115 is a N-CHANNEL FET with 2 elements and built-in diode for switching applications. It has a max drain current of 5A, min DS breakdown voltage of 20V, and max power dissipation of 0.51W. This small outline transistor operates in enhancement mode at up to 150°C.
DRAIN
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
5 A
4 A
.061 ohm
S-PDSO-N6
2
6
SQUARE
.51 W
NO LEAD
PMGD175XN,115
PMGD175XN,115 by NXP Semiconductors is a N-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 0.9A Drain Current, and 0.225 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
30 V
.9 A
.225 ohm
R-PDSO-G6
.905 W
PMDPB95XNE,115
PMDPB95XNE,115 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 30V. It is used for switching applications and has a max drain current of 3.1A and max power dissipation of 6.25W.
3.1 A
2.4 A
.12 ohm
6.25 W
PMV65UN,215
PMV65UN,215 by NXP Semiconductors is an N-channel FET designed for switching applications. It features a max drain current of 2.2 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.
2.2 A
2 A
.076 ohm
2.17 W
2N7002K,215
2N7002K,215 by NXP Semiconductors is a small signal FET with N-channel polarity. It operates in enhancement mode for switching applications. With a max drain current of 0.34A and breakdown voltage of 60V, it's ideal for high-power circuits in various electronic devices.
LOGIC LEVEL COMPATIBLE
60 V
.34 A
3.9 ohm
10 pF
-65 Cel
.83 W
Not Qualified
2N7002T,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .3 A; JEDEC-95 Code: TO-236AB;
.3 A
5 ohm
BF1205C,115
NXP Semiconductors' BF1205C,115 is a N-CHANNEL FET for SWITCHING applications. It has a 6V DS Breakdown Voltage and max Drain Current of 0.03A. With PLASTIC/EPOXY body, it operates in ENHANCEMENT MODE at 150°C.
COMPLEX
6 V
.03 A
.18 W
MATTE TIN
BF1210,115
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-30 Code: R-PDSO-G6; Transistor Element Material: SILICON;
COMMON SOURCE, 2 ELEMENTS
DUAL GATE, ENHANCEMENT MODE
AMPLIFIER
BF1214,115
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .03 A;
PHK24NQ04LT,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: MS-012; JESD-30 Code: R-PDSO-G8; No. of Terminals: 8;
40 V
21.2 A
.0077 ohm
MS-012
R-PDSO-G8
8
PHK28NQ03LT,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Terminal Position: DUAL; Qualification: Not Qualified;
23.7 A
.0065 ohm
e4
Nickel/Palladium/Gold (Ni/Pd/Au)
PHK4NQ20T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
200 V
.13 ohm
FET General Purpose Powers
PHKD13N03LT,118
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 2; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
10.4 A
.02 ohm
MS-012AA
PMBFJ620,115
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .19 W; Maximum Feedback Capacitance (Crss): 2.5 pF; Minimum DS Breakdown Voltage: 25 V;
LOW NOISE
SEPARATE, 2 ELEMENTS
25 V
2.5 pF
.19 W
FET General Purpose Small Signal
PMR280UN,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; JESD-30 Code: R-PDSO-G3; Terminal Form: GULL WING;
.98 A
.34 ohm
.53 W
PMR400UN,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
.8 A
.48 ohm
PMV31XN,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN; JESD-30 Code: R-PDSO-G3;
5.9 A
.037 ohm
2 W
PMV45EN,215
PMV45EN,215 by NXP Semiconductors is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.4A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2W and can withstand temperatures up to 150°C.
5.4 A
.042 ohm
PMWD20XN,118
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G8; Package Body Material: PLASTIC/EPOXY;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
.022 ohm
MO-153
PMWD26UN,518
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: 7800 ohm;
5.2 A
7800 ohm
MO-153AB
PMWD30UN,518
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
.04 ohm
PHT4NQ10LT,135
NXP Semiconductors PHT4NQ10LT,135 is a N-CHANNEL FET with 100V DS breakdown voltage and 3.5A max drain current. Ideal for switching applications, it features a built-in diode, 0.25 ohm max on resistance, and operates in enhancement mode at up to 150°C.
100 V
3.5 A
.25 ohm
R-PDSO-G4
4
6.9 W
2N7000,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
NO
THROUGH-HOLE
BOTTOM
2N7002E,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JEDEC-95 Code: TO-236AB; Additional Features: LOGIC LEVEL COMPATIBLE;
.385 A
3 ohm
2N7002F,215
2N7002F,215 by NXP Semiconductors is a N-CHANNEL FET with a 60V DS breakdown voltage and 0.475A drain current. It is used for switching applications in enhancement mode, featuring a built-in diode and 10pF feedback capacitance. Operating temperature ranges from -65 to 150 °C.
.475 A
2 ohm
BF861A,215
BF861A,215 by NXP Semiconductors is a small signal N-CHANNEL FET with 25V DS breakdown voltage. Ideal for amplifier applications, it operates in depletion mode and has a max power dissipation of 0.25W. With a peak reflow temperature of 260°C, this transistor features a junction technology and offers low feedback capacitance at 2.7pF.
SINGLE
JUNCTION
2.7 pF
DEPLETION MODE
.25 W
Other Transistors
BF861B,215
NXP Semiconductors BF861B,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and 2.7pF Crss feedback capacitance. This SMALL OUTLINE transistor has a max power dissipation of 0.25W and operates up to 150°C temperature.
BF861C,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; JEDEC-95 Code: TO-236AB;
Tin (Sn)
BF862,215
BF862,215 by NXP Semiconductors is a small signal FET with N-channel configuration for amplifier applications. It features a min DS breakdown voltage of 20V and max drain current of 0.04A. With surface mount capability and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
.04 A
.225 W
BFR30,215
NXP Semiconductors' BFR30,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and GULL WING terminals. With a max power dissipation of 0.3W and operating temperature up to 150°C, it offers reliable performance in small outline packages.
.01 A
1.5 pF
.3 W
BFR31,215
NXP Semiconductors' BFR31,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and GULL WING terminals. With a max power dissipation of 0.3W and operating temp up to 150°C, it's designed for small outline packages.
IEC-134
BFT46,215
BFT46,215 by NXP Semiconductors is a small signal N-CHANNEL FET transistor with a min DS breakdown voltage of 25V. It is commonly used as an amplifier in various applications. The transistor operates in depletion mode and has a max power dissipation of 0.25W at a max operating temperature of 150°C.
BS108,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): CYLINDRICAL;
.25 A
15 pF
.35 W
BSN254,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; JESD-609 Code: e3; Maximum Drain Current (ID): .3 A;
250 V
7 ohm
BSN254A,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Qualification: Not Qualified; Package Style (Meter): CYLINDRICAL;
1 W
BSN304,126
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Package Style (Meter): CYLINDRICAL; JESD-609 Code: e3;
300 V
8 ohm
BSP254A,126
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Terminal Position: BOTTOM;
.2 A
15 ohm
NOT APPLICABLE
NOT SPECIFIED
P-CHANNEL
BSP304A,126
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): .17 A; Minimum DS Breakdown Voltage: 300 V;
.17 A
17 ohm
BSR56,215
NXP Semiconductors' BSR56,215 is a N-CHANNEL FET for SWITCHING applications. With 40V DS Breakdown Voltage and 0.3W Power Dissipation, it operates in DEPLETION MODE. Featuring GULL WING terminals and SILICON element material, it offers reliable performance up to 150°C.
.02 A
25 ohm
5 pF
BSR57,215
NXP Semiconductors' BSR57,215 is a N-CHANNEL FET for SWITCHING applications. With 40V DS Breakdown Voltage and 40ohm RDS(on), it operates in DEPLETION MODE at 150°C. This SMALL OUTLINE transistor has GULL WING terminals and is ideal for high-temp environments requiring low power dissipation.
40 ohm
BSR58,215
NXP Semiconductors' BSR58,215 is a N-CHANNEL FET for SWITCHING applications. With a 40V DS Breakdown Voltage and 60 ohm On Resistance, it operates in DEPLETION MODE at up to 150°C. This SMALL OUTLINE transistor with GULL WING terminals is ideal for compact electronic devices requiring low power dissipation.
.005 A
60 ohm
BSS83,215
NXP Semiconductors' BSS83,215 is a N-CHANNEL FET with 10V DS Breakdown Voltage and 0.05A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 0.23W at 125°C.
SUBSTRATE
10 V
.05 A
120 ohm
125 Cel
.23 W
BST72A,112
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JEDEC-95 Code: TO-92; Terminal Position: BOTTOM;
.19 A
10 ohm
J109,126
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; No. of Elements: 1;
12 ohm
.4 W
J112,126
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; Maximum Drain-Source On Resistance: 50 ohm;
50 ohm
J113,126
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: 100 ohm; JESD-30 Code: O-PBCY-T3;
100 ohm
J175,116
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Style (Meter): CYLINDRICAL; Field Effect Transistor Technology: JUNCTION;
125 ohm
O-PBCY-W3
WIRE
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