Loading...

NXP Semiconductors Small Signal Field Effect Transistors (FET) 66

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
J176,126 by NXP Semiconductors

J176,126

NXP Semiconductors

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; Minimum DS Breakdown Voltage: 30 V;

SINGLE

30 V

250 ohm

JUNCTION

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

P-CHANNEL

.4 W

Not Qualified

FET General Purpose Small Signal

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

J177,126 by NXP Semiconductors

J177,126

NXP Semiconductors

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Terminal Form: THROUGH-HOLE; JESD-30 Code: O-PBCY-T3;

SINGLE

30 V

300 ohm

JUNCTION

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

P-CHANNEL

.4 W

Not Qualified

FET General Purpose Small Signal

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

PHT2NQ10T,135 by NXP Semiconductors

PHT2NQ10T,135

NXP Semiconductors

Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Case Connection: DRAIN; Terminal Position: DUAL;

DRAIN

SINGLE WITH BUILT-IN DIODE

.43 ohm

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

PMBF4391,215 by NXP Semiconductors

PMBF4391,215

NXP Semiconductors

NXP Semiconductors' PMBF4391,215 is a N-CHANNEL FET with 40V DS breakdown voltage. Ideal for switching applications, it features a single configuration with built-in diode and operates in depletion mode. With a max drain current of 0.012A and small outline package style, it offers fast turn on/off times of 80ns/20ns.

SINGLE WITH BUILT-IN DIODE

40 V

.012 A

.012 A

30 ohm

JUNCTION

3.5 pF

R-PDSO-F3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

20 ns

80 ns

PMBF4392,215 by NXP Semiconductors

PMBF4392,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: 60 ohm;

SINGLE

40 V

.006 A

60 ohm

JUNCTION

3.5 pF

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMBF4393,215 by NXP Semiconductors

PMBF4393,215

NXP Semiconductors

NXP Semiconductors' PMBF4393,215 is a N-CHANNEL FET for SWITCHING applications. With a 40V DS Breakdown Voltage and 100 ohm On Resistance, it operates in DEPLETION MODE. This SMALL OUTLINE transistor has a max power dissipation of 0.25W and can handle up to 0.003A drain current.

SINGLE

40 V

.003 A

100 ohm

JUNCTION

3.5 pF

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMBFJ108,215 by NXP Semiconductors

PMBFJ108,215

NXP Semiconductors

The NXP Semiconductors PMBFJ108,215 is a N-CHANNEL FET for SWITCHING applications. It features a 25V DS Breakdown Voltage, 8 ohm Drain-Source On Resistance, and 15pF Feedback Capacitance. With a DEPLETION MODE operation and GULL WING terminals, it offers reliable performance in small outline packages.

SINGLE

25 V

8 ohm

JUNCTION

15 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMBFJ109,215 by NXP Semiconductors

PMBFJ109,215

NXP Semiconductors

NXP Semiconductors' PMBFJ109,215 is a N-CHANNEL FET for SWITCHING applications. With 25V DS Breakdown Voltage and 12 ohm Drain-Source On Resistance, it operates in DEPLETION MODE. This SMALL OUTLINE transistor has a max power dissipation of 0.25W at 150°C.

SINGLE

25 V

12 ohm

JUNCTION

15 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMBFJ110,215 by NXP Semiconductors

PMBFJ110,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Maximum Feedback Capacitance (Crss): 15 pF;

SINGLE

25 V

18 ohm

JUNCTION

15 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMBFJ111,215 by NXP Semiconductors

PMBFJ111,215

NXP Semiconductors

PMBFJ111,215 by NXP Semiconductors is a small signal N-channel FET with a min DS breakdown voltage of 40V. It is used for switching applications and operates in depletion mode. With a max power dissipation of 0.3W and a max operating temperature of 150°C, it offers reliable performance in various electronic devices.

SINGLE

40 V

30 ohm

JUNCTION

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMBFJ112,215 by NXP Semiconductors

PMBFJ112,215

NXP Semiconductors

The NXP Semiconductors PMBFJ112,215 is a small signal N-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage and 50 ohm max drain-source resistance. With a power dissipation of 0.3W and operating temperature up to 150°C, it is ideal for depletion mode operation in various electronic circuits.

SINGLE

40 V

50 ohm

JUNCTION

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMBFJ113,215 by NXP Semiconductors

PMBFJ113,215

NXP Semiconductors

The NXP Semiconductors PMBFJ113,215 is a small signal N-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage and 0.3W power dissipation in a PLASTIC/EPOXY package with GULL WING terminals. Operating in DEPLETION MODE, it has a max temperature of 150°C and an on-resistance of 100 ohm, making it suitable for various electronic circuits.

SINGLE

40 V

100 ohm

JUNCTION

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMBFJ174,215 by NXP Semiconductors

PMBFJ174,215

NXP Semiconductors

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; JESD-609 Code: e3;

SINGLE

30 V

85 ohm

JUNCTION

R-PDSO-G3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.3 W

Not Qualified

FET General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMBFJ175,215 by NXP Semiconductors

PMBFJ175,215

NXP Semiconductors

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: DEPLETION MODE;

SINGLE

30 V

125 ohm

JUNCTION

R-PDSO-G3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.3 W

Not Qualified

FET General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMBFJ176,215 by NXP Semiconductors

PMBFJ176,215

NXP Semiconductors

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Minimum DS Breakdown Voltage: 30 V; Terminal Finish: TIN;

SINGLE

30 V

250 ohm

JUNCTION

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.3 W

Not Qualified

FET General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMBFJ177,215 by NXP Semiconductors

PMBFJ177,215

NXP Semiconductors

PMBFJ177,215 by NXP Semiconductors is a P-CHANNEL small signal FET with a min DS breakdown voltage of 30V. It is used for switching applications and operates in depletion mode. This surface mount transistor has a max power dissipation of 0.3W and can withstand temperatures up to 150°C.

SINGLE

30 V

300 ohm

JUNCTION

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.3 W

Not Qualified

FET General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

SI4420DY,518 by NXP Semiconductors

SI4420DY,518

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Shape: RECTANGULAR; Terminal Position: DUAL;

SINGLE WITH BUILT-IN DIODE

30 V

.0125 A

.009 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

SI9410DY,518 by NXP Semiconductors

SI9410DY,518

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Element Material: SILICON;

SINGLE WITH BUILT-IN DIODE

30 V

7 A

.007 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

SWITCHING

SILICON