Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AO4606
Alpha & Omega Semiconductor
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .03 ohm; Package Style (Meter): SMALL OUTLINE;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
6 A
.03 ohm
METAL-OXIDE SEMICONDUCTOR
50 pF
R-PDSO-G8
2
8
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL AND P-CHANNEL
2 W
YES
GULL WING
DUAL
SWITCHING
SILICON
NVGS3443T1G
Onsemi
NVGS3443T1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 4.4A and 0.065 ohm Drain-Source Resistance, operating in ENHANCEMENT MODE at up to 150 °C. This SMALL OUTLINE transistor with GULL WING terminals is designed for high power dissipation and AEC-Q101 compliance.
ULTRA LOW RESISTANCE
SINGLE WITH BUILT-IN DIODE
20 V
4.4 A
2.2 A
.065 ohm
R-PDSO-G6
e3
1
6
260
P-CHANNEL
AEC-Q101
Other Transistors
MATTE TIN
30
NVMD6P02R2G
The Onsemi NVMD6P02R2G is a P-CHANNEL FET with 7.8A max drain current and 2W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and power management systems.
7.8 A
UPA1911ATE-T1-A
Renesas Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; JESD-609 Code: e6;
2.5 A
.12 ohm
e6
TIN BISMUTH
UPA1917TE-T1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 6 A;
SINGLE
NOT SPECIFIED
UPA1919TE-T1-AT
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Terminals: 6; Transistor Element Material: SILICON;
.084 ohm
BSO200N03
Infineon Technologies
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Terminal Finish: MATTE TIN;
AVALANCHE RATED
6.6 A
.02 ohm
56 pF
MS-012
3
N-CHANNEL
Not Qualified
FET General Purpose Power
IRFM210BTF_FP001
Fairchild Semiconductor
Fairchild Semiconductor's IRFM210BTF_FP001 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for SWITCHING applications. It features 0.77A max drain current, 1.5 ohm max on resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 2W power dissipation at 150°C.
DRAIN
200 V
.77 A
1.5 ohm
9 pF
R-PDSO-G4
4
PMV31XN,215
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN; JESD-30 Code: R-PDSO-G3;
5.9 A
.037 ohm
TO-236AB
R-PDSO-G3
TIN
PMV45EN,215
PMV45EN,215 by NXP Semiconductors is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.4A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2W and can withstand temperatures up to 150°C.
5.4 A
.042 ohm
IEC-60134
SI3433BDV-T1-GE3
Vishay Intertechnology
SI3433BDV-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage, 4.3A Drain Current, and 0.042ohm On Resistance. Ideal for small signal applications in electronics due to its SINGLE configuration with built-in diode and ENHANCEMENT MODE operation. Package style is SMALL OUTLINE, suitable for surface mount designs in various electronic devices.
4.3 A
PURE MATTE TIN
SQ2361EES-T1-GE3
The Vishay Intertechnology SQ2361EES-T1-GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 2.5A max drain current. Ideal for small signal applications, it features a built-in diode, 0.15 ohm max on resistance, and operates in enhancement mode at up to 175°C.
60 V
.15 ohm
TO-236
175 Cel
40
UPA1804GR-9JG-E1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 8 A; No. of Elements: 1;
8 A
UPA1814GR-9JG-E1-A
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
7 A
.027 ohm
UPA1815GR-9JG-E1-A
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN BISMUTH; No. of Elements: 1;
NTMSD3P102R2
NTMSD3P102R2 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2.34A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body material, it offers reliable performance in small outline packages at up to 150 °C.
2.34 A
.085 ohm
135 pF
e0
235
Tin/Lead (Sn/Pb)
STS1HNK60
STMicroelectronics
STS1HNK60 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and 0.3A max drain current. It comes in a compact rectangular package with gull-wing terminals. This MOSFET operates efficiently at up to 150 °C.
600 V
.3 A
8.5 ohm
e4
NICKEL PALLADIUM GOLD
SI3457BDV-T1-E3
Vishay Intertechnology's SI3457BDV-T1-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 3.7A Drain Current, and 0.054 ohm On Resistance. Ideal for applications requiring high power dissipation up to 2W in small outline packages, such as portable electronics and power management systems.
3.7 A
.054 ohm
STS3C2F100
STS3C2F100 by STMicroelectronics is a dual N/P-channel FET designed for efficient switching applications. It features a max drain current of 3 A, a breakdown voltage of 100 V, and operates at up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.
100 V
1.5 A
3 A
.145 ohm
STS8DNH3LL
STS8DNH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 8 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.
.025 ohm
STS5DPF20L
STS5DPF20L by STMicroelectronics is a P-channel MOSFET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates in enhancement mode. Its compact SO8 package ensures efficient surface mounting.
5 A
.075 ohm
STS8C5H30L
STS8C5H30L by STMicroelectronics is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It has 30V DS breakdown voltage, 4.2A max drain current, and 0.025 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Package: SO-8, surface mountable with Gull Wing terminals.
4.2 A
20 pF
MMDF2P02HDR2G
MMDF2P02HDR2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.3A Drain Current. Ideal for SWITCHING applications, it features a RECTANGULAR package, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 2W and operating temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits.
LOGIC LEVEL COMPATIBLE
3.3 A
.16 ohm
232 pF
Tin (Sn)
MMDF3N04HDR2G
MMDF3N04HDR2G by Onsemi is a N-CHANNEL FET with 40V DS breakdown voltage and 3.4A max drain current, ideal for switching applications. It features a separate configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. This small outline transistor has a max power dissipation of 2W and can withstand temperatures up to 150 °C.
LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED
40 V
3.4 A
.08 ohm
96 pF
NTMSD3P102R2G
NTMSD3P102R2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.34A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150 °C, this MOSFET has 0.085 ohm On Resistance and 135pF Feedback Capacitance.
NTMSD3P303R2G
NTMSD3P303R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2.34A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and a RECTANGULAR package shape, it offers high performance in small outline designs at up to 150 °C operating temperature.
NTMD6P02R2SG
NTMD6P02R2SG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 6.2A Drain Current, and 0.033 ohm On Resistance. Ideal for SWITCHING applications, it features a RECTANGULAR package with GULL WING terminals and operates in ENHANCEMENT MODE up to 150 °C.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
6.2 A
4.8 A
.033 ohm
450 pF
NTMSD3P102R2SG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;
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