Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BCR153TE6327
Infineon Technologies
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;
.1 A
20
1
260
PNP
.25 W
BIP General Purpose Small Signal
YES
SILICON
BCX5610H6327XTSA1
BCX5610H6327XTSA1 by Infineon is a NPN BJT transistor with 80V VCEO, 1A IC, and 2W Ptot. Ideal for amplifier applications, it has a hFE of 63 and fT of 100MHz. This small outline package with flat terminals operates up to 150°C, making it suitable for various electronic designs.
COLLECTOR
1 A
80 V
SINGLE
63
R-PSSO-F3
e3
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NPN
2 W
AEC-Q101
Other Transistors
TIN
FLAT
40
AMPLIFIER
100 MHz
BCR189L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;
120
BCR151L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;
.05 A
70
BCR146L3E6327
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; No. of Elements: 1;
.07 A
50
BCR192L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;
BCR199L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Transistor Element Material: SILICON;
BCR164L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 30;
30
BCR196L3E6327
BCR112L3E6327
Infineon's BCR112L3E6327 is a NPN BJT with 0.1A IC, 0.25W power dissipation, and hFE of 20. Ideal for surface mount applications in electronics requiring small signal amplification.
BCR149L3E6327
BCR114L3E6327
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30; Peak Reflow Temperature (C): 260;
BCR153L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 20; No. of Elements: 1;
BCR139L3E6327
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;
BCR162L3E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;
BCR183L3E6327
Infineon's BCR183L3E6327 is a PNP BJT with max. power dissipation of 0.25W, min. DC current gain of 30, and max. collector current of 0.1A. Ideal for surface mount applications in electronics due to its silicon element material and peak reflow temp of 260°C.
BCR101L3E6327
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;
BSP61H6327XTSA1
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; No. of Elements: 1;
60 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
2000
R-PDSO-G4
4
GULL WING
DUAL
200 MHz
BC857BL3E6327XTMA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e4;
LOW NOISE
45 V
220
R-XBCC-N3
e4
UNSPECIFIED
CHIP CARRIER
GOLD
NO LEAD
BOTTOM
250 MHz
BCP49H6327XTSA1
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
.5 A
DARLINGTON
BCP5310H6327XTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
125 MHz
BCP5316H6327XTSA1
BCP5316H6327XTSA1 by Infineon is a PNP BJT with 4 terminals, 2W power dissipation, and 80V collector-emitter voltage. Ideal for amplifier applications, it has a min hFE of 100 and operates up to 150°C. This surface-mount transistor in a small outline package offers high performance with a transition frequency of 125MHz.
100
BCR129SH6327XTSA1
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 2;
BUILT-IN BIAS RESISTOR
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-G6
2
6
SWITCHING
150 MHz
BCR183UE6327HTSA1
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30;
BUILT-IN BIAS RESISTOR RATIO IS 1
BCX5316E6433HTMA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSSO-F3;
BCX5616E6433HTMA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;
BSP50H6327XTSA1
Infineon's BSP50H6327XTSA1 is a NPN BJT with Darlington configuration, ideal for switching applications. Features include hFE of 2000, VCE of 45V, and IC of 1A. With a fT of 200MHz, this transistor offers fast turn-on/off times making it suitable for high-speed operations in compact designs.
1500 ns
400 ns
BSP51H6327XTSA1
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; JESD-609 Code: e3;
BSP52H6327XTSA1
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Package Style (Meter): SMALL OUTLINE;
BSP62H6327XTSA1
BSP62H6327XTSA1 by Infineon is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has a hFE of 2000, Vce of 80V, and fT of 200MHz. Ideal for switching applications, this transistor offers fast turn-on/off times and can handle up to 1A collector current in a surface-mount package.
MMBTA42LT1HTSA1
Infineon's MMBTA42LT1HTSA1 is a NPN BJT transistor with hFE of 40, VCE of 300V, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and fT of 70MHz.
300 V
R-PDSO-G3
NOT SPECIFIED
70 MHz
BC860CWH6327
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
420
BCX6910H6327XTSA1
BCX6910H6327XTSA1 by Infineon is a PNP BJT transistor with 20V VCE, 1A IC, and 100MHz fT. Ideal for amplifier applications due to its high hFE of 85. It comes in a small outline package with flat terminals suitable for surface mount assembly.
20 V
85
BCV49H6327XTSA1
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Reference Standard: AEC-Q101;
BC817K25WE6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Reference Standard: AEC-Q101;
160
170 MHz
BC817K40WE6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;
250
BC847CWH6433XTMA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
BC847PNE6327BTSA1
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;
SEPARATE, 2 ELEMENTS
110
NPN AND PNP
BC847PNH6433XTMA1
Infineon Technologies' BC847PNH6433XTMA1 is a small signal BJT transistor with NPN and PNP polarity. It has a max collector-emitter voltage of 45V, making it suitable for amplifier applications. With a min DC current gain of 200 and a nominal transition frequency of 250MHz, it offers high performance in a compact rectangular package.
200
BC847SE6327BTSA1
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
BC847SH6433XTMA1
Infineon BC847SH6433XTMA1 is a NPN BJT with 2 elements, hFE of 200, and VCE of 45V. Ideal for amplifier applications, it has a fT of 250MHz and IC max of 0.1A. This small outline transistor in gull wing package suits surface mount designs per AEC-Q101 standards.
BC857SH6433XTMA1
BC857SH6433XTMA1 by Infineon: PNP BJT with hFE of 200, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications due to its small outline package and high transition frequency. Suitable for surface mount designs with dual terminals in a rectangular shape.
BCM846SE6327HTSA1
BCM846SE6327HTSA1 by Infineon Technologies is a NPN BJT with 2 elements, hFE of 200. It's used as an amplifier in surface mount applications, featuring max VCE of 65V and IC of 0.1A. Ideal for high-frequency operations with fT of 250MHz and can withstand up to 150°C operating temperature.
65 V
BCR08PNH6433XTMA1
Infineon's BCR08PNH6433XTMA1 is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors in a rectangular package with gull wing terminals. With a max collector-emitter voltage of 50V and max collector current of 0.07A, it offers high performance in a compact small outline package.
BUILT-IN BIAS RESISTOR RATIO 1
BCR108SH6433XTMA1
Infineon's BCR108SH6433XTMA1 is a NPN BJT with 2 elements, built-in resistor, and hFE of 70. Ideal for switching applications with max VCE of 50V and IC of 0.1A. AEC-Q101 compliant, it operates at fT of 170MHz in a small outline package suitable for surface mount designs.
BUILT-IN BIAS RESISTOR RATIO IS 21.36
BCR133SH6433XTMA1
Infineon's BCR133SH6433XTMA1 is a NPN BJT with 2 elements and built-in resistor, ideal for switching applications. With a hFE of 30, it offers a max VCE of 50V and IC of 0.1A. This small outline transistor in gull wing package has fT of 130MHz, meeting AEC-Q101 standards.
130 MHz
BCR148SH6433XTMA1
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
BUILT IN BIAS RESISTOR RATIO IS 1
BCR158WE6327HTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
SINGLE WITH BUILT-IN RESISTOR
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