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Infineon Technologies Small Signal Bipolar Junction Transistors (BJT) 237

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCR101T-E6327 by Infineon Technologies

BCR101T-E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A; Minimum DC Current Gain (hFE): 70; Transistor Element Material: SILICON;

.05 A

70

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR112F-E6327 by Infineon Technologies

BCR112F-E6327

Infineon Technologies

Infineon's BCR112F-E6327 is a NPN BJT transistor with max. power dissipation of 0.25W, min. DC current gain of 20, and max. collector current of 0.1A. Ideal for surface mount applications in electronics requiring small signal amplification and switching capabilities at peak reflow temp of 260°C.

.1 A

20

1

260

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR142F-E6327 by Infineon Technologies

BCR142F-E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 70; Transistor Element Material: SILICON;

.1 A

70

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR114F-E6327 by Infineon Technologies

BCR114F-E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; No. of Elements: 1;

.1 A

30

1

1

260

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR139F-E6327 by Infineon Technologies

BCR139F-E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;

.1 A

120

1

1

260

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR139T-E6327 by Infineon Technologies

BCR139T-E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;

.1 A

120

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR146F-E6327 by Infineon Technologies

BCR146F-E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Minimum DC Current Gain (hFE): 50; No. of Elements: 1;

.07 A

50

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR153F-E6327 by Infineon Technologies

BCR153F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 20;

.1 A

20

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR149T-E6327 by Infineon Technologies

BCR149T-E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; No. of Elements: 1;

.07 A

120

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR162F-E6327 by Infineon Technologies

BCR162F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 20; Transistor Element Material: SILICON;

.1 A

20

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR151T-E6327 by Infineon Technologies

BCR151T-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON; No. of Elements: 1;

.05 A

70

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR189F-E6327 by Infineon Technologies

BCR189F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; No. of Elements: 1;

.1 A

120

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR189T-E6327 by Infineon Technologies

BCR189T-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;

.1 A

120

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR199T-E6327 by Infineon Technologies

BCR199T-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Transistor Element Material: SILICON;

.07 A

120

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR164T-E6327 by Infineon Technologies

BCR164T-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30; Transistor Element Material: SILICON;

.1 A

30

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR196F-E6327 by Infineon Technologies

BCR196F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 50;

.07 A

50

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR196T-E6327 by Infineon Technologies

BCR196T-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Minimum DC Current Gain (hFE): 50; Transistor Element Material: SILICON;

.07 A

50

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR192F-E6327 by Infineon Technologies

BCR192F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;

.1 A

70

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR103F-E6327 by Infineon Technologies

BCR103F-E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;

.1 A

20

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR103T-E6327 by Infineon Technologies

BCR103T-E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 20;

.1 A

20

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR183F-E6327 by Infineon Technologies

BCR183F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260;

.1 A

30

1

260

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR198F-E6327 by Infineon Technologies

BCR198F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

.07 A

70

1

1

260

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR133F-E6327 by Infineon Technologies

BCR133F-E6327

Infineon Technologies

Infineon's BCR133F-E6327 is a NPN BJT ideal for surface mount applications. With a max power dissipation of 0.25W, min hFE of 30, and max IC of 0.1A, it's suitable for low-power electronic circuits in various industries.

.1 A

30

1

1

260

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR185F-E6327 by Infineon Technologies

BCR185F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 70; Transistor Element Material: SILICON;

.1 A

70

1

PNP

.25 W

BIP General Purpose Small Signals

YES

SILICON

BCR135F-E6327 by Infineon Technologies

BCR135F-E6327

Infineon Technologies

Infineon's BCR135F-E6327 is a NPN BJT transistor with 0.1A max collector current, 0.25W power dissipation, and 70 min DC current gain. Ideal for surface mount applications in small signal circuits requiring silicon element material.

.1 A

70

1

NPN

.25 W

BIP General Purpose Small Signals

YES

SILICON

BCR169F-E6327 by Infineon Technologies

BCR169F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; No. of Elements: 1;

.1 A

120

1

PNP

.25 W

BIP General Purpose Small Signals

YES

SILICON

BCR191F-E6327 by Infineon Technologies

BCR191F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 50;

.1 A

50

1

PNP

.25 W

BIP General Purpose Small Signals

YES

BCR158F-E6327 by Infineon Technologies

BCR158F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;

.1 A

70

1

PNP

.25 W

BIP General Purpose Small Signals

YES

SILICON

BCR179F-E6327 by Infineon Technologies

BCR179F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;

.1 A

120

1

PNP

.25 W

BIP General Purpose Small Signals

YES

SILICON

BSP50E6327HTSA1 by Infineon Technologies

BSP50E6327HTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; No. of Elements: 1;

COLLECTOR

1 A

45 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BSP60E6327HTSA1 by Infineon Technologies

BSP60E6327HTSA1

Infineon Technologies

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Package Shape: RECTANGULAR;

COLLECTOR

1 A

45 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BSP62E6327HTSA1 by Infineon Technologies

BSP62E6327HTSA1

Infineon Technologies

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 2000;

COLLECTOR

1 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BCR523UE6327HTSA1 by Infineon Technologies

BCR523UE6327HTSA1

Infineon Technologies

Infineon's BCR523UE6327HTSA1 is a NPN BJT with 2 elements, built-in resistor, and hFE of 70. Ideal for switching applications, it has a max operating temp of 150°C, VCE of 50V, and IC of 0.5A. With a fT of 100MHz, this transistor in small outline package suits high-frequency needs.

BUILT-IN BIAS RESISTOR RATIO IS 10

.5 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR523UE6433HTMA1 by Infineon Technologies

BCR523UE6433HTMA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Qualification: Not Qualified;

BUILT-IN BIAS RESISTOR RATIO IS 10

.5 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

e3

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCV48E6327HTSA1 by Infineon Technologies

BCV48E6327HTSA1

Infineon Technologies

PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

FLAT

SINGLE

SILICON

200 MHz

BCV26E6327HTSA1 by Infineon Technologies

BCV26E6327HTSA1

Infineon Technologies

BCV26E6327HTSA1 by Infineon Technologies is a PNP Darlington transistor with a min DC current gain of 4000 and max collector-emitter voltage of 30V. It operates at up to 150°C, making it suitable for high-temperature applications in small outline packages. With a nominal transition frequency of 200MHz, it is ideal for high-frequency amplification needs.

.5 A

30 V

DARLINGTON

4000

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

200 MHz

BCV27E6327HTSA1 by Infineon Technologies

BCV27E6327HTSA1

Infineon Technologies

BCV27E6327HTSA1 by Infineon Technologies is a NPN Darlington transistor with 4000 min hFE, 30V VCEO, and 170MHz fT. Ideal for small signal applications in electronics due to its high DC current gain and low power dissipation of 0.36W. Suitable for surface mount designs with a compact rectangular package style.

.5 A

30 V

DARLINGTON

4000

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.36 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SILICON

170 MHz

BCP49E6327HTSA1 by Infineon Technologies

BCP49E6327HTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

SILICON

200 MHz

SMBTA06UPNE6327HTSA1 by Infineon Technologies

SMBTA06UPNE6327HTSA1

Infineon Technologies

SMBTA06UPNE6327HTSA1 by Infineon Technologies is a Small Signal BJT with NPN and PNP configuration, 2 elements, and Gull Wing terminals. It operates up to 150°C with a max voltage of 80V and max current of 0.5A. Ideal for applications requiring high DC gain (hFE), such as amplification in small outline packages.

.5 A

80 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

100 MHz

BCW68GE6327HTSA1 by Infineon Technologies

BCW68GE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;

.8 A

45 V

SINGLE

60

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

200 MHz

BCR133WE6327HTSA1 by Infineon Technologies

BCR133WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

130 MHz

PZTA42E6327HTSA1 by Infineon Technologies

PZTA42E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

.5 A

300 V

SINGLE

40

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

SILICON

70 MHz

SMBTA06E6327HTSA1 by Infineon Technologies

SMBTA06E6327HTSA1

Infineon Technologies

Infineon Technologies' SMBTA06E6327HTSA1 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 100MHz. This surface-mount device in a small outline package suits compact designs.

.5 A

80 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BC846BWE6327HTSA1 by Infineon Technologies

BC846BWE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

.1 A

65 V

SINGLE

200

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

BC857BE6327HTSA1 by Infineon Technologies

BC857BE6327HTSA1

Infineon Technologies

BC857BE6327HTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 220, VCE of 45V, and IC of 0.1A. It is used for switching applications in surface mount designs due to its high transition frequency of 250MHz. The package style is small outline with Gull Wing terminals, suitable for compact electronic devices.

.1 A

45 V

SINGLE

220

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC857CE6327HTSA1 by Infineon Technologies

BC857CE6327HTSA1

Infineon Technologies

Infineon's BC857CE6327HTSA1 is a PNP BJT transistor with hFE of 420, Vce of 45V, and Ic of 0.1A. Ideal for switching applications, it operates at up to 150°C with a transition frequency of 250MHz. This surface-mount device has a gull wing terminal form in a small outline package.

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BCX55E6327HTSA1 by Infineon Technologies

BCX55E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified;

COLLECTOR

1 A

60 V

SINGLE

40

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

BC847BWE6433HTMA1 by Infineon Technologies

BC847BWE6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

.1 A

45 V

SINGLE

200

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz