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.2 W Small Signal Bipolar Junction Transistors (BJT) 231

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DTC114TUAT106 by ROHM

DTC114TUAT106

ROHM

ROHM DTC114TUAT106 is a NPN BJT with VCEsat of 0.3V, hFE of 100, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

GULL WING

DUAL

10

SWITCHING

SILICON

250 MHz

.3 V

DTC124XUAT106 by ROHM

DTC124XUAT106

ROHM

ROHM DTC124XUAT106 is a NPN BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 250MHz.

BUILT-IN BIAS RESISTOR RATIO IS 2.1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

250 MHz

.3 V

DTC143EUA-T106 by ROHM

DTC143EUA-T106

ROHM

ROHM DTC143EUA-T106 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications, it has a built-in resistor in a small outline package suitable for surface mount technology. Operating up to 150°C, it offers high performance in compact designs.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN SILVER COPPER

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

.3 V

DTC363EUT106 by ROHM

DTC363EUT106

ROHM

ROHM DTC363EUT106 is a NPN BJT with built-in resistor for switching applications. Features include 0.2W power dissipation, 20V collector-emitter voltage, and 200MHz transition frequency. Ideal for surface mount designs requiring small outline packages.

BUILT-IN BIAS RESISTOR RATIO IS 1

.6 A

20 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

200 MHz

DTA114EUA-T106 by ROHM

DTA114EUA-T106

ROHM

ROHM's DTA114EUA-T106 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.

BUILT-IN BIAS RESISTOR RATIO IS 1

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

.2 W

Not Qualified

BIP General Purpose Small Signals

YES

GULL WING

DUAL

10

SWITCHING

SILICON

250 MHz

.3 V

DTA123JUA-T106 by ROHM

DTA123JUA-T106

ROHM

ROHM's DTA123JUA-T106 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 250MHz. With GULL WING terminals in a SMALL OUTLINE package, it offers efficient performance in compact designs.

BUILT-IN BIAS RESISTOR RATIO IS 21

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN SILVER COPPER

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

.3 V

DTC114GUAT106 by ROHM

DTC114GUAT106

ROHM

ROHM DTC114GUAT106 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 250MHz.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

250 MHz

.3 V

2SD1757KT146R by ROHM

2SD1757KT146R

ROHM

ROHM 2SD1757KT146R is a NPN BJT transistor with max. collector-emitter voltage of 15V, ideal for switching applications. Features include min. DC current gain of 180 and max. operating temp of 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs in various electronic circuits.

.5 A

15 V

SINGLE

180

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

Tin/Silver/Copper (Sn/Ag/Cu)

GULL WING

DUAL

10

SWITCHING

SILICON

150 MHz

2SD2226KT146W by ROHM

2SD2226KT146W

ROHM

ROHM 2SD2226KT146W is a NPN BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 0.15A. It has a min. DC current gain of 1200, suitable for small signal applications in electronics due to its high transition frequency of 250MHz. The Gull Wing terminal form and small outline package make it ideal for surface mount designs requiring compact components.

.15 A

50 V

SINGLE

1200

R-PDSO-G3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

SILICON

250 MHz

MMST2222AT146 by ROHM

MMST2222AT146

ROHM

ROHM MMST2222AT146 is a NPN BJT transistor for switching applications. Features include VCEsat of 0.6V, hFE of 40, and IC of 0.6A. With a max operating temperature of 150°C, it has a transition frequency of 300MHz making it suitable for high-speed switching circuits.

.6 A

7 pF

40 V

SINGLE

40

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

285 ns

35 ns

.6 V

MMSTA06T146 by ROHM

MMSTA06T146

ROHM

ROHM MMSTA06T146 is a NPN BJT transistor with VCEsat of 0.25V, hFE of 100, and IC of 0.5A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 100MHz. Features gull wing terminals in a plastic/epoxy body for surface mount assembly.

.5 A

80 V

SINGLE

100

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

100 MHz

.25 V

DDC144NS-7 by Diodes Incorporated

DDC144NS-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

HBDM60V600W-7 by Diodes Incorporated

HBDM60V600W-7

Diodes Incorporated

Diodes Inc.'s HBDM60V600W-7 is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and can handle up to 0.5A collector current at 65V. With a transition frequency of 100MHz, it's ideal for high-frequency applications in electronics requiring small outline packages.

.5 A

65 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

MMDT3946LP4-7 by Diodes Incorporated

MMDT3946LP4-7

Diodes Incorporated

NPN AND PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SINGLE

30

R-PDSO-N6

e4

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SILICON

300 MHz

70 ns

250 ns

2PB709AR,115 by NXP Semiconductors

2PB709AR,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

5 pF

45 V

SINGLE

210

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

70 MHz

.5 V

2PB709AS,115 by NXP Semiconductors

2PB709AS,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

5 pF

45 V

SINGLE

290

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.5 V

PMST5401,115 by NXP Semiconductors

PMST5401,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

150 V

SINGLE

50

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SILICON

100 MHz

.5 V

PMST5401,135 by NXP Semiconductors

PMST5401,135

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

150 V

SINGLE

50

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SILICON

100 MHz

.5 V

MMDT3946-TP by Micro Commercial Components

MMDT3946-TP

Micro Commercial Components

MMDT3946-TP by Micro Commercial Components is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and can handle up to 40V. Ideal for switching applications, it offers a transition frequency of 300MHz and operates at temperatures up to 150°C.

.2 A

40 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

250 ns

70 ns

MMDT3906-7 by Diodes Incorporated

MMDT3906-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

300 ns

70 ns

DDTC114WUA-7 by Diodes Incorporated

DDTC114WUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTANCE RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

24

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC124XUA-7 by Diodes Incorporated

DDTC124XUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

BUILT-IN BIAS RESISTANCE RATIO IS 2.14

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC143FUA-7 by Diodes Incorporated

DDTC143FUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTANCE RATIO IS 4.68

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC143XUA-7 by Diodes Incorporated

DDTC143XUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTANCE RATIO IS 2.13

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

10

SILICON

250 MHz

DDTC123EUA-7 by Diodes Incorporated

DDTC123EUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC143EUA-7 by Diodes Incorporated

DDTC143EUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC144EUA-7 by Diodes Incorporated

DDTC144EUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

MMDT3946-7 by Diodes Incorporated

MMDT3946-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

2SC4081RT1 by Onsemi

2SC4081RT1

Onsemi

2SC4081RT1 by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 50V and max collector current of 0.1A. With a min DC current gain of 180, it's ideal for amplifier applications. This surface mount transistor has a small outline package style and operates up to 150 °C.

.1 A

50 V

SINGLE

180

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.2 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

BC848AW-7-F by Diodes Incorporated

BC848AW-7-F

Diodes Incorporated

BC848AW-7-F by Diodes Inc. is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.2W, hFE of 110, and operates up to 150°C. With a max collector-emitter voltage of 30V and peak reflow temp of 260°C, it's suitable for small outline packages in high-frequency circuits up to 300MHz.

.1 A

30 V

SINGLE

110

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

BC858AW-7-F by Diodes Incorporated

BC858AW-7-F

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

30 V

SINGLE

125

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

BC858BW-7-F by Diodes Incorporated

BC858BW-7-F

Diodes Incorporated

BC858BW-7-F by Diodes Inc. is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.2W, hFE of 220, and operates up to 150°C. With a package style of small outline and surface mount capability, it offers high performance in compact designs.

.1 A

30 V

SINGLE

220

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

MIMD10A-7-F by Diodes Incorporated

MIMD10A-7-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO 100

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

MMBT4126-7-F by Diodes Incorporated

MMBT4126-7-F

Diodes Incorporated

Diodes Inc. MMBT4126-7-F is a PNP BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 60, and fT of 250MHz. With max ratings of 25V VCEO and 0.2A IC, it operates b/w -55°C to 150°C in a small outline package suitable for surface mount technology.

.2 A

4.5 pF

25 V

Single

60

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

.4 V

MMDT4124-7-F by Diodes Incorporated

MMDT4124-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

HIGH RELIABILITY

.2 A

25 V

SEPARATE, 2 ELEMENTS

60

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

MMDT4126-7-F by Diodes Incorporated

MMDT4126-7-F

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

25 V

SEPARATE, 2 ELEMENTS

60

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

MMST4124-7-F by Diodes Incorporated

MMST4124-7-F

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

25 V

SINGLE

60

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

DDTA113TKA-7-F by Diodes Incorporated

DDTA113TKA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA113ZKA-7-F by Diodes Incorporated

DDTA113ZKA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA114EKA-7-F by Diodes Incorporated

DDTA114EKA-7-F

Diodes Incorporated

DDTA114EKA-7-F by Diodes Incorporated is a PNP small signal bipolar junction transistor with a max collector-emitter voltage of 50V and a max collector current of 0.05A. It is commonly used in applications such as amplifiers, switches, and audio circuits.

BUILT IN BIAS RESISTOR RATIO IS 1

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA114GKA-7-F by Diodes Incorporated

DDTA114GKA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

UL RECOGNIZED

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA114TKA-7-F by Diodes Incorporated

DDTA114TKA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA114WKA-7-F by Diodes Incorporated

DDTA114WKA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

24

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA114YKA-7-F by Diodes Incorporated

DDTA114YKA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .07 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA115ECA-7-F by Diodes Incorporated

DDTA115ECA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .02 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA115EKA-7-F by Diodes Incorporated

DDTA115EKA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .02 A;

BUILT IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA115GKA-7-F by Diodes Incorporated

DDTA115GKA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

UL RECOGNIZED

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA115GUA-7-F by Diodes Incorporated

DDTA115GUA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz