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.2 W Small Signal Bipolar Junction Transistors (BJT) 231

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DDTB122TC-7-F by Diodes Incorporated

DDTB122TC-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

BUILT-IN BIAS RESISTOR

.5 A

40 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

200 MHz

DDTB142JC-7-F by Diodes Incorporated

DDTB142JC-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

BUILT-IN BIAS RESISTOR RATIO IS 21.28

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

200 MHz

DDTB142JU-7-F by Diodes Incorporated

DDTB142JU-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

BUILT-IN BIAS RESISTANCE RATIO IS 21.28

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

200 MHz

DDTB142TC-7-F by Diodes Incorporated

DDTB142TC-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

BUILT-IN BIAS RESISTOR

.5 A

40 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

200 MHz

DDTC122LU-7-F by Diodes Incorporated

DDTC122LU-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 45.45

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

200 MHz

DDTD122LC-7-F by Diodes Incorporated

DDTD122LC-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

BUILT IN BIAS RESISTOR RATIO 45.45

.5 A

40 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

200 MHz

DDTD122TC-7-F by Diodes Incorporated

DDTD122TC-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

BUILT IN BIAS RESISTOR

.5 A

40 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

200 MHz

DDTD142TC-7-F by Diodes Incorporated

DDTD142TC-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

BUILT IN BIAS RESISTOR

.5 A

40 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

200 MHz

MSD1328-ST1G by Onsemi

MSD1328-ST1G

Onsemi

The Onsemi MSD1328-ST1G is a NPN BJT transistor with 300 min hFE, 0.5A IC, and 20V VCE. Ideal for amplifier applications, it comes in a small outline package with GULL WING terminals for surface mount assembly. Operating up to 150 °C, it has a peak reflow temperature of 260°C.

.5 A

20 V

SINGLE

300

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

DTC144WET1G by Onsemi

DTC144WET1G

Onsemi

DTC144WET1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. The package is surface mountable with Gull Wing terminals in a small outline rectangular shape.

BUILT-IN BIAS RESISTOR RATIO IS 2.1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

MSD601-ST1G by Onsemi

MSD601-ST1G

Onsemi

The Onsemi MSD601-ST1G is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.5V, min hFE of 290, and max IC of 0.1A. With GULL WING terminals and a small outline package style, it operates up to 150 °C making it suitable for various electronic circuits.

.1 A

50 V

SINGLE

290

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

.5 V

MSC2712YT1G by Onsemi

MSC2712YT1G

Onsemi

MSC2712YT1G by Onsemi is a NPN BJT transistor with 120 min hFE, 50 MHz fT, and 150 °C max operating temp. Ideal for amplifier applications due to its 0.2W power dissipation, 0.1A max IC, and 50V max VCE. It comes in a small outline package with Gull Wing terminals for surface mount assembly.

.1 A

50 V

SINGLE

120

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

50 MHz

DRDNB26W-7 by Diodes Incorporated

DRDNB26W-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .6 A;

.6 A

50 V

SINGLE WITH BUILT-IN RESISTOR

47

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DRDPB16W-7 by Diodes Incorporated

DRDPB16W-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .6 A;

.6 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DRDPB26W-7 by Diodes Incorporated

DRDPB26W-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .6 A;

.6 A

50 V

SINGLE WITH BUILT-IN RESISTOR

47

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DVR2V5W-7 by Diodes Incorporated

DVR2V5W-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): 1 A;

1 A

18 V

SINGLE WITH BUILT-IN DIODE

150

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

DVR3V3W-7 by Diodes Incorporated

DVR3V3W-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): 1 A;

1 A

18 V

SINGLE WITH BUILT-IN DIODE

150

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

SDBN500B01-7 by Diodes Incorporated

SDBN500B01-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

60

e3

1

1

150 Cel

260

NPN

.2 W

Other Transistors

YES

MATTE TIN

30

100 MHz

HN2C01FU-GR(T5L,F) by Toshiba

HN2C01FU-GR(T5L,F)

Toshiba

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .15 A;

.15 A

3.5 pF

50 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

.2 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

80 MHz

.25 V

HN2C01FU-Y(TE85L,F by Toshiba

HN2C01FU-Y(TE85L,F

Toshiba

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .15 A;

.15 A

3.5 pF

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-G6

2

6

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

.2 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

80 MHz

.25 V

RN2404-(TE85LF) by Toshiba

RN2404-(TE85LF)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;

.1 A

80

1

260

PNP

.2 W

BIP General Purpose Small Signal

YES

30

SILICON

ABC857BW-HF by Comchip Technology

ABC857BW-HF

Comchip Technology

ABC857BW-HF by Comchip Technology is a PNP BJT transistor with VCEsat of 0.65V, hFE of 220, and IC of 0.1A. Ideal for amplifier applications, it has a max operating temperature of 150°C and collector-emitter voltage of 45V. Suitable for surface mount with gull wing terminals in a small outline package style.

LOW NOISE

.1 A

5 pF

45 V

SINGLE

220

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

.2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

.65 V

DCX144EUQ-7R-F by Diodes Incorporated

DCX144EUQ-7R-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

.3 V

BC847W-QF by Nexperia

BC847W-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

.4 V

BC857CWQ-13 by Diodes Incorporated

BC857CWQ-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

4.5 pF

45 V

SINGLE

420

R-PDSO-G3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.65 V

RN2904,LF by Toshiba

RN2904,LF

Toshiba

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

6 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

.2 W

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.3 V

RN2903,LF by Toshiba

RN2903,LF

Toshiba

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

6 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

.2 W

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.3 V

RN2902,LF by Toshiba

RN2902,LF

Toshiba

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

6 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

50

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

.2 W

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.3 V

DDC143XU-13 by Diodes Incorporated

DDC143XU-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 2.13

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

DDC143XU-7 by Diodes Incorporated

DDC143XU-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 2.13

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

BC847W-QX by Nexperia

BC847W-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847AW-QX by Nexperia

BC847AW-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847AW-QF by Nexperia

BC847AW-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC846AW-QX by Nexperia

BC846AW-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

65 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC846AW-QF by Nexperia

BC846AW-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

65 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC846W-QF by Nexperia

BC846W-QF

Nexperia

BC846W-QF by Nexperia is a NPN BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 110, and IC of 0.1A. With a max operating temp of 150°C, it has a fT of 100MHz. Ideal for small outline packages in automotive and industrial electronics.

.1 A

3 pF

65 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC857BW-QF by Nexperia

BC857BW-QF

Nexperia

BC857BW-QF by Nexperia is a PNP BJT transistor for switching applications. It has VCEsat of 0.6V, hFE of 220, and IC of 0.1A. With a max operating temp of 150°C, it's ideal for small outline packages in automotive electronics.

.1 A

3 pF

45 V

SINGLE

220

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.6 V

BC858W-QF by Nexperia

BC858W-QF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

30 V

SINGLE

125

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.6 V

BC858W-QX by Nexperia

BC858W-QX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

30 V

SINGLE

125

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.6 V