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.2 W Small Signal Bipolar Junction Transistors (BJT) 231

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FA4F4M-T1B-A by Renesas Electronics

FA4F4M-T1B-A

Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 60;

.1 A

60

e6

1

NPN

.2 W

BIP General Purpose Small Signal

YES

TIN BISMUTH

SILICON

FN4L4M-T1B-A by Renesas Electronics

FN4L4M-T1B-A

Renesas Electronics

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 85;

.1 A

85

e6

1

PNP

.2 W

BIP General Purpose Small Signal

YES

TIN BISMUTH

SILICON

RN2702(TE85L,F) by Toshiba

RN2702(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

50

2

PNP

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN1961(TE85L,F) by Toshiba

RN1961(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

30

2

NPN

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN1962(TE85L,F) by Toshiba

RN1962(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

50

2

NPN

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN1965(TE85L,F) by Toshiba

RN1965(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

80

2

NPN

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN2711(TE85L,F) by Toshiba

RN2711(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

120

2

PNP

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN4989(TE85L,F) by Toshiba

RN4989(TE85L,F)

Toshiba

NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

70

2

NPN AND PNP

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN4988(TE85L,F) by Toshiba

RN4988(TE85L,F)

Toshiba

NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

80

2

NPN AND PNP

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN4990(TE85L,F) by Toshiba

RN4990(TE85L,F)

Toshiba

NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

120

2

NPN AND PNP

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN49A1(TE85L,F) by Toshiba

RN49A1(TE85L,F)

Toshiba

NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 80;

.1 A

80

2

NPN AND PNP

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN1970(TE85L,F) by Toshiba

RN1970(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

120

2

NPN

.2 W

BIP General Purpose Small Signals

YES

SILICON

RN1971(TE85L,F) by Toshiba

RN1971(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

120

2

NPN

.2 W

BIP General Purpose Small Signals

YES

SILICON

BC857BSQ-7-F by Diodes Incorporated

BC857BSQ-7-F

Diodes Incorporated

Diodes Inc. BC857BSQ-7-F is a PNP BJT with 2 elements, ideal for switching applications. Features include max. collector-emitter voltage of 45V, max. collector current of 0.1A, and min. DC current gain of 220 (hFE). Package: Small Outline, Surface Mount with Gull Wing terminals.

HIGH RELIABILITY

.1 A

45 V

SEPARATE, 2 ELEMENTS

220

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

DCX114EUQ-13-F by Diodes Incorporated

DCX114EUQ-13-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DCX114YUQ-13-F by Diodes Incorporated

DCX114YUQ-13-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DCX114YUQ-13R-F by Diodes Incorporated

DCX114YUQ-13R-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DCX124EUQ-13-F by Diodes Incorporated

DCX124EUQ-13-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DCX124EUQ-13R-F by Diodes Incorporated

DCX124EUQ-13R-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DDA114EUQ-7-F by Diodes Incorporated

DDA114EUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;

.05 A

30

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA114TUQ-13-F by Diodes Incorporated

DDA114TUQ-13-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;

.1 A

100

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA114TUQ-7-F by Diodes Incorporated

DDA114TUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

100

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA114YUQ-7-F by Diodes Incorporated

DDA114YUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260;

.07 A

68

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA124EUQ-13-F by Diodes Incorporated

DDA124EUQ-13-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;

.03 A

60

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA124EUQ-7-F by Diodes Incorporated

DDA124EUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 60;

.03 A

60

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA143TUQ-13-F by Diodes Incorporated

DDA143TUQ-13-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3; Transistor Element Material: SILICON;

.1 A

160

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA143TUQ-7-F by Diodes Incorporated

DDA143TUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;

.1 A

160

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA144EUQ-7-F by Diodes Incorporated

DDA144EUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;

.03 A

68

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDC114TUQ-7-F by Diodes Incorporated

DDC114TUQ-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DDC114YUQ-7-F by Diodes Incorporated

DDC114YUQ-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.7, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDC124EUQ-7-F by Diodes Incorporated

DDC124EUQ-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

56

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA114ECAQ-13-F by Diodes Incorporated

DDTA114ECAQ-13-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA114ECAQ-7-F by Diodes Incorporated

DDTA114ECAQ-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC123ECAQ-7-F by Diodes Incorporated

DDTC123ECAQ-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC124EUAQ-13-F by Diodes Incorporated

DDTC124EUAQ-13-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A;

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

.03 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC143TCAQ-13-F by Diodes Incorporated

DDTC143TCAQ-13-F

Diodes Incorporated

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30;

.1 A

100

e3

1

1

260

NPN

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

DDTC143TCAQ-7-F by Diodes Incorporated

DDTC143TCAQ-7-F

Diodes Incorporated

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN; No. of Elements: 1;

.1 A

100

e3

1

1

260

NPN

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

2SAR502EBTL by ROHM

2SAR502EBTL

ROHM

ROHM 2SAR502EBTL is a PNP BJT transistor with VCEsat of 0.4V, hFE of 200, and fT of 520MHz. Ideal for amplifier applications due to its small outline package style and max collector current of 0.5A. Suitable for surface mount designs with a rectangular package shape and flat terminal form.

.5 A

4 pF

30 V

SINGLE

200

R-PDSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

YES

TIN

FLAT

DUAL

10

AMPLIFIER

SILICON

520 MHz

.4 V

DDC114YUQ-13-F by Diodes Incorporated

DDC114YUQ-13-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.7, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

BCX70JT116 by ROHM

BCX70JT116

ROHM

ROHM BCX70JT116 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 250, and fT of 125MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 45V. Suitable for surface mount designs with GULL WING terminals.

LOW NOISE

.2 A

4.5 pF

45 V

SINGLE

250

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

125 MHz

.3 V

BCX70KT116 by ROHM

BCX70KT116

ROHM

ROHM's BCX70KT116 is a NPN small signal bipolar junction transistor (BJT) with a max VCEsat of 0.3V, making it suitable for amplifier applications. It has a min DC current gain (hFE) of 380 and can handle a max collector-emitter voltage of 45V.

LOW NOISE

.2 A

4.5 pF

45 V

SINGLE

380

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

125 MHz

.3 V

MMDT2907AQ-7-F by Diodes Incorporated

MMDT2907AQ-7-F

Diodes Incorporated

MMDT2907AQ-7-F by Diodes Incorporated is a PNP BJT with 2 elements, ideal for switching applications. It features VCEsat of 1.6V, hFE of 50, and IC of 0.6A. With a max operating temp of 150°C and fT of 200MHz, it's suitable for small outline packages in automotive electronics.

.6 A

8 pF

60 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

100 ns

45 ns

1.6 V

2SC4098T106P by ROHM

2SC4098T106P

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

.05 A

2.2 pF

25 V

SINGLE

82

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

300 MHz

.3 V

MMSTA28T146 by ROHM

MMSTA28T146

ROHM

ROHM MMSTA28T146 is a NPN BJT transistor with max VCEsat of 1.5V, hFE of 10000, and fT of 200MHz. Ideal for amplifier applications due to its small outline package style and high transition frequency. Suitable for surface mount designs with Gull Wing terminals and operates up to 150°C.

.3 A

8 pF

80 V

SINGLE

10000

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

200 MHz

1.5 V

2N3859AD75Z by Fairchild Semiconductor

2N3859AD75Z

Fairchild Semiconductor

2N3859AD75Z by Fairchild Semiconductor is a NPN bipolar junction transistor with a max collector-emitter voltage of 60V and a max collector current of 0.5A. It has a min DC current gain of 100, making it suitable for switching applications. With a nominal transition frequency of 90MHz, this transistor is ideal for high-frequency operations in various electronic circuits.

.5 A

60 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.2 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

90 MHz

DTD143TKT146 by ROHM

DTD143TKT146

ROHM

ROHM DTD143TKT146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 100, and IC of 0.5A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 200MHz.

BUILT-IN BIAS RESISTOR

.5 A

40 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

200 MHz

.3 V

2SA1579T106R by ROHM

2SA1579T106R

ROHM

ROHM's 2SA1579T106R is a PNP small signal BJT transistor with a max VCEsat of 0.5V and a min DC current gain (hFE) of 180. It is commonly used as an amplifier in various applications.

.05 A

120 V

SINGLE

180

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

140 MHz

.5 V

DTA144EUAT106 by ROHM

DTA144EUAT106

ROHM

ROHM DTA144EUAT106 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and can operate up to 150°C.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

GULL WING

DUAL

10

SWITCHING

SILICON

250 MHz

.3 V