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3 A Small Signal Bipolar Junction Transistors (BJT) 30

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZTX1149ASTOB by Diodes Incorporated

ZTX1149ASTOB

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 135 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

3 A

50 pF

25 V

SINGLE

115

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1 W

NO

WIRE

SINGLE

SILICON

135 MHz

.3 V

ZTX1149ASTZ by Diodes Incorporated

ZTX1149ASTZ

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 135 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

3 A

50 pF

25 V

SINGLE

115

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

135 MHz

.3 V

ZXT13P40DE6QTA by Diodes Incorporated

ZXT13P40DE6QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 115 MHz; Maximum Power Dissipation (Abs): 1.7 W; Maximum Collector Current (IC): 3 A;

HIGH RELIABILITY

3 A

40 V

SINGLE

15

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.7 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

115 MHz

2SAR552PFRAT100 by ROHM

2SAR552PFRAT100

ROHM

ROHM 2SAR552PFRAT100 is a PNP BJT transistor with hFE of 200, VCE of 30V, and IC of 3A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and high transition frequency of 330MHz.

COLLECTOR

3 A

30 V

SINGLE

200

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

FLAT

SINGLE

10

SWITCHING

SILICON

330 MHz

2SD1815S-H by Onsemi

2SD1815S-H

Onsemi

The Onsemi 2SD1815S-H is a NPN BJT with max power dissipation of 20W, hFE of 140, and IC of 3A. Ideal for small signal applications in electronics due to its single configuration and high operating temperature of 150 °C.

3 A

SINGLE

140

e6

1

150 Cel

NPN

20 W

Other Transistors

NO

TIN BISMUTH

2SD1815S-TL-H by Onsemi

2SD1815S-TL-H

Onsemi

2SD1815S-TL-H by Onsemi is a NPN BJT with 20W power dissipation, 140 min hFE, and 150 °C max operating temp. Ideal for applications requiring a single configuration, surface mount capability, and up to 3A collector current.

3 A

SINGLE

140

e6

1

1

150 Cel

260

NPN

20 W

Other Transistors

YES

TIN BISMUTH

30

2SD1815T-H by Onsemi

2SD1815T-H

Onsemi

The Onsemi 2SD1815T-H is a NPN BJT with max power dissipation of 20W, min hFE of 200, and max IC of 3A. Ideal for small signal applications in electronics due to its single configuration and operating temp up to 150 °C.

3 A

SINGLE

200

e6

1

150 Cel

NPN

20 W

Other Transistors

NO

TIN BISMUTH

2SD1815T-TL-H by Onsemi

2SD1815T-TL-H

Onsemi

The Onsemi 2SD1815T-TL-H is a NPN BJT with max power dissipation of 20W, hFE of 200, and IC of 3A. Ideal for small signal applications in electronics due to its single configuration and surface mount capability. Operating temp up to 150 °C makes it suitable for various electronic devices.

3 A

SINGLE

200

e6

1

1

150 Cel

260

NPN

20 W

Other Transistors

YES

TIN BISMUTH

30

CPH3121-TL-E by Onsemi

CPH3121-TL-E

Onsemi

CPH3121-TL-E by Onsemi is a PNP BJT transistor with max power dissipation of 0.9W, hFE of 200, and IC of 3A. Ideal for surface mount applications in electronics due to its high operating temp of 150 °C and peak reflow temp of 260°C within 30s.

3 A

SINGLE

200

e6

1

1

150 Cel

260

PNP

.9 W

Other Transistors

YES

TIN BISMUTH

30

2SA1797T100/Q by ROHM

2SA1797T100/Q

ROHM

ROHM 2SA1797T100/Q is a PNP BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 3A. It has a min. DC current gain of 120, ideal for amplifier applications due to its high transition frequency of 200MHz and small outline package style.

COLLECTOR

3 A

50 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

AMPLIFIER

SILICON

200 MHz

ZTX1053ASTZ by Zetex Plc

ZTX1053ASTZ

Zetex Plc

ZTX1053ASTZ by Zetex Plc is a NPN BJT transistor with hFE of 100, VCE of 75V, and IC of 3A. Ideal for small signal applications in electronics due to its high transition frequency of 140MHz. Its cylindrical package with wire terminals makes it suitable for various circuit configurations.

3 A

75 V

SINGLE

100

O-PBCY-W3

e3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

MATTE TIN

WIRE

BOTTOM

10

SILICON

140 MHz

2SB1184TLQ by ROHM

2SB1184TLQ

ROHM

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;

3 A

50 V

SINGLE

120

R-PSSO-G2

e2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn98Cu2)

GULL WING

SINGLE

10

SWITCHING

SILICON

70 MHz

2SD1760TLQ by ROHM

2SD1760TLQ

ROHM

ROHM 2SD1760TLQ is a NPN BJT transistor with max. power dissipation of 15W and max. collector current of 3A. Ideal for switching applications, it has a min. DC current gain of 120 (hFE) and operates up to 150°C. Its small outline package makes it suitable for surface mount designs in various electronic circuits.

3 A

50 V

SINGLE

120

R-PSSO-G2

e2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

15 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

GULL WING

SINGLE

10

SWITCHING

SILICON

90 MHz

2DD2150R-13 by Diodes Incorporated

2DD2150R-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

20 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

160 MHz

2DB1424R-13 by Diodes Incorporated

2DB1424R-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

20 V

SINGLE

180

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

220 MHz

DZT751-13 by Diodes Incorporated

DZT751-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 145 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

60 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

145 MHz

DXT690BP5Q-13 by Diodes Incorporated

DXT690BP5Q-13

Diodes Incorporated

DXT690BP5Q-13 by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 60, and VCE max of 45V. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high fT of 150MHz. It comes in a small outline package with matte tin finish for surface mount assembly.

HIGH RELIABILITY

COLLECTOR

3 A

45 V

SINGLE

60

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

150 MHz

DPLS315E-13 by Diodes Incorporated

DPLS315E-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

15 V

SINGLE

150

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

KSB772YSTSTU by Fairchild Semiconductor

KSB772YSTSTU

Fairchild Semiconductor

KSB772YSTSTU by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 10W, hFE of 160, and operates at up to 150°C. With a max VCE of 30V and IC of 3A, it offers high performance in a rectangular package suitable for flange mount installations.

3 A

30 V

SINGLE

160

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

10 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

80 MHz

STX790A by STMicroelectronics

STX790A

STMicroelectronics

STX790A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its compact cylindrical package ensures efficient performance in various electronic circuits.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

400 ns

430 ns

STX13005 by STMicroelectronics

STX13005

STMicroelectronics

STX13005 from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.8W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronic devices.

3 A

400 V

SINGLE

8

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

2.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2DD2678-13 by Diodes Incorporated

2DD2678-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

12 V

SINGLE

270

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

170 MHz

STX690A by STMicroelectronics

STX690A

STMicroelectronics

STX690A by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, a collector current of 3 A, and operates up to 150 °C. Its cylindrical package and through-hole terminals ensure easy integration in circuits.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.9 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

MMJT9435T1G by Onsemi

MMJT9435T1G

Onsemi

MMJT9435T1G by Onsemi is a PNP BJT with 3W power dissipation, hFE of 90, and max operating temp of 150 °C. Ideal for small outline applications requiring a collector-emitter voltage of 30V, collector current up to 3A, and transition frequency of 110MHz.

COLLECTOR

3 A

30 V

SINGLE

90

TO-261AA

R-PDSO-G4

e3

3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

110 MHz

MMJT9435T3G by Onsemi

MMJT9435T3G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

30 V

SINGLE

90

TO-261AA

R-PDSO-G4

e3

3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

110 MHz

2STX1360 by STMicroelectronics

2STX1360

STMicroelectronics

2STX1360 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, collector current of 3A, and operates up to 150 °C. Ideal for efficient signal processing in compact electronic devices.

3 A

60 V

SINGLE

160

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

130 MHz

785 ns

120 ns

STX790A-AP by STMicroelectronics

STX790A-AP

STMicroelectronics

STX790A-AP by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its cylindrical package ensures efficient thermal management in compact designs.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

400 ns

430 ns

STX826 by STMicroelectronics

STX826

STMicroelectronics

STX826 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its cylindrical package ensures efficient thermal management in compact designs.

3 A

30 V

SINGLE

30

TO-92

O-PBCY-W3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.9 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

2SAR533PT100 by ROHM

2SAR533PT100

ROHM

ROHM 2SAR533PT100 is a PNP BJT transistor with max. power dissipation of 2W, hFE of 180, and max. collector-emitter voltage of 50V. Ideal for switching applications in small outline packages, it operates at up to 150°C with a max. collector current of 3A and transition frequency of 300MHz.

COLLECTOR

3 A

50 V

SINGLE

180

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

300 MHz

PBSS4350Z/ZLF by Nexperia

PBSS4350Z/ZLF

Nexperia

Nexperia's PBSS4350Z/ZLF is a NPN BJT transistor with hFE of 200, VCE of 50V, and IC of 3A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a transition frequency of 100MHz, it offers high performance in compact designs.

COLLECTOR

3 A

50 V

SINGLE

200

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz