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25 MHz Power Bipolar Junction Transistors (BJT) 16

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NJVMJD112G by Onsemi

NJVMJD112G

Onsemi

NJVMJD112G by Onsemi is a NPN Darlington BJT with 2A IC, 20W Pd, and hFE of 1000. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency of 25MHz. Its small outline package makes it suitable for surface mount designs in harsh environments.

2 A

DARLINGTON

1000

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

AEC-Q101

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SILICON

25 MHz

MJD117RLG by Onsemi

MJD117RLG

Onsemi

MJD117RLG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 2A. It is designed for switching applications and has a min DC current gain of 200 (hFE).

COLLECTOR

2 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

20 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

25 MHz

2ST5949 by STMicroelectronics

2ST5949

STMicroelectronics

2ST5949 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 250W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance power management in various electronic devices.

COLLECTOR

17 A

250 V

SINGLE

35

TO-3

O-MBFM-P2

e3

1

1

2

150 Cel

METAL

ROUND

FLANGE MOUNT

NPN

250 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

25 MHz

2STA2120 by STMicroelectronics

2STA2120

STMicroelectronics

2STA2120 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

200 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

2STC5948 by STMicroelectronics

2STC5948

STMicroelectronics

2STC5948 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

200 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

2STC5949 by STMicroelectronics

2STC5949

STMicroelectronics

2STC5949 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 220W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

TO-264AA

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

220 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

2ST2121 by STMicroelectronics

2ST2121

STMicroelectronics

2ST2121 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 250W, operates up to 200 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

COLLECTOR

17 A

250 V

SINGLE

35

TO-3

O-MBFM-P2

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

PNP

250 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

2STA2121 by STMicroelectronics

2STA2121

STMicroelectronics

2STA2121 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 220W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

TO-264AA

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

220 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

MJD112RL by Onsemi

MJD112RL

Onsemi

MJD112RL by Onsemi is a NPN BJT with Darlington configuration, built-in diode and resistor. It has a max power dissipation of 20W, hFE of 200, and operates up to 150 °C. Ideal for switching applications due to its high collector current of 2A and max voltage of 100V.

COLLECTOR

2 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

20 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

25 MHz

2N6035G by Onsemi

2N6035G

Onsemi

The Onsemi 2N6035G is a PNP power BJT with a max collector current of 4A and a min DC current gain of 100. It has a max operating temperature of 150 °C, making it suitable for amplifier applications. The transistor features a Darlington configuration with built-in diode and resistor, housed in a plastic/epoxy package with matte tin terminal finish.

4 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

2N6036G by Onsemi

2N6036G

Onsemi

2N6036G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 100. With a package style of flange mount and operating temp up to 150 °C, it offers high performance in various electronic designs.

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

2N6039G by Onsemi

2N6039G

Onsemi

2N6039G by Onsemi is a NPN Power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 100. With a package style of flange mount and operating temp up to 150 °C, it offers high performance in power applications.

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

TIP112G by Onsemi

TIP112G

Onsemi

TIP112G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 50W and can handle a max collector-emitter voltage of 100V. This transistor is commonly used in amplifier applications due to its high DC current gain (hFE) of 500 and nominal transition frequency (fT) of 25MHz.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

2 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

2N6034G by Onsemi

2N6034G

Onsemi

2N6034G by Onsemi is a PNP BJT with 40V VCEO, 4A IC, and 25MHz fT. Ideal for amplifier applications, it features a built-in diode and resistor in a plastic/epoxy package with through-hole terminals. Max power dissipation of 1.5W at 150 °C ensures reliable performance in various environments.

4 A

40 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

TIP112PBFREE by Central Semiconductor

TIP112PBFREE

Central Semiconductor

TIP112PBFREE by Central Semiconductor is a NPN Darlington BJT with 2.5V VCEsat, 50W power dissipation, and 100V VCEO. Ideal for amplifier applications, it has a hFE of 500 and operates b/w -65 to 150 °C. Package style is flange mount with matte tin over nickel finish in a rectangular shape with through-hole terminals.

2 A

100 pF

100 V

DARLINGTON

500

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

2.5 V

TIP112TIN/LEAD by Central Semiconductor

TIP112TIN/LEAD

Central Semiconductor

TIP112TIN/LEAD by Central Semiconductor is a NPN Darlington BJT with max VCEsat of 2.5V, hFE of 500, and IC of 2A. Ideal for amplifier applications, it operates b/w -65 to 150°C with a max power dissipation of 50W in a plastic package style.

2 A

100 pF

100 V

DARLINGTON

500

TO-220AB

R-PSFM-T3

e0

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

2.5 V