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70 W Power Bipolar Junction Transistors (BJT) 16

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BUL138 by STMicroelectronics

BUL138

STMicroelectronics

BUL138 by STMicroelectronics is a NPN Power BJT transistor with 400V VCE, 5A IC, and 1V VCEsat. Ideal for switching applications, it has a max power dissipation of 80W and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

HIGH RELIABILITY

5 A

400 V

SINGLE

8

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

80 W

70 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1500 ns

1 V

BUL39D by STMicroelectronics

BUL39D

STMicroelectronics

BUL39D by STMicroelectronics is a NPN Power BJT with 450V VCE, 4A IC, and 70W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. The transistor has a hFE of at least 4 and a turn-off time of 1600ns, making it suitable for high-power tasks.

4 A

450 V

SINGLE WITH BUILT-IN DIODE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1600 ns

1.1 V

BUL903ED by STMicroelectronics

BUL903ED

STMicroelectronics

BUL903ED by STMicroelectronics is a NPN Power BJT with 400V VCE, 5A IC, and 70W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating up to 150 °C, it has hFE of min. 20 and comes in a flange mount style with matte tin terminals.

5 A

400 V

SINGLE WITH BUILT-IN DIODE

20

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

TR236 by STMicroelectronics

TR236

STMicroelectronics

TR236 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.

4 A

400 V

SINGLE

8

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

70 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BULB742C-1 by STMicroelectronics

BULB742C-1

STMicroelectronics

BULB742C-1 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 70W, a collector-emitter voltage of 400V, and operates up to 150 °C. This versatile transistor is ideal for various electronic circuits.

COLLECTOR

4 A

400 V

SINGLE

25

TO-262AA

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BDX34BTU by Fairchild Semiconductor

BDX34BTU

Fairchild Semiconductor

Fairchild Semiconductor's BDX34BTU is a PNP Darlington transistor with 70W power dissipation, 80V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it has a min DC current gain of 750 and operates up to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.

10 A

80 V

DARLINGTON

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

70 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

2STBN15D100T4 by STMicroelectronics

2STBN15D100T4

STMicroelectronics

2STBN15D100T4 by STMicroelectronics is a NPN Power BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 12A, and min DC current gain of 750. This transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly.

COLLECTOR

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

NPN

70 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

BUV27G by Onsemi

BUV27G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 12 A; Maximum Collector-Emitter Voltage: 120 V;

COLLECTOR

12 A

120 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

70 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BDX33BG by Onsemi

BDX33BG

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 10 A;

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

10 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BDX34BG by Onsemi

BDX34BG

Onsemi

BDX34BG by Onsemi is a PNP power BJT with 70W max power dissipation, 10A max collector current, and 150°C max operating temperature. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor has a min hFE of 750 and operates at a max VCE of 80V in a rectangular package style suitable for flange mount installations.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

10 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

70 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BDX34CG by Onsemi

BDX34CG

Onsemi

BDX34CG by Onsemi is a PNP Power BJT with 70W power dissipation, 10A collector current, and 150°C max operating temp. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor has a max collector-emitter voltage of 100V and min DC current gain of 750 hFE.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

10 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

70 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP131G by Onsemi

TIP131G

Onsemi

TIP131G by Onsemi is a NPN Darlington transistor with 80V max collector-emitter voltage, 8A max collector current, and 70W max power dissipation. Ideal for amplifier applications due to its high DC current gain of 1000 (hFE). Package style: Flange mount, terminal form: Through-hole.

COLLECTOR

8 A

80 V

DARLINGTON

1000

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

70 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

TIP132G by Onsemi

TIP132G

Onsemi

TIP132G by Onsemi is a NPN Darlington BJT with 100V VCEO, 8A IC, and 70W Ptot. Ideal for amplifier applications, it has hFE of 1000 and can operate up to 150 °C. Package style is flange mount with through-hole terminals.

COLLECTOR

8 A

100 V

DARLINGTON

1000

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

70 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

BUL804 by STMicroelectronics

BUL804

STMicroelectronics

BUL804 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages up to 450V. Ideal for high-power circuits with through-hole mounting.

4 A

450 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUL704 by STMicroelectronics

BUL704

STMicroelectronics

BUL704 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

4 A

400 V

SINGLE

14

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

HD1530FX by STMicroelectronics

HD1530FX

STMicroelectronics

HD1530FX by STMicroelectronics is a powerful NPN BJT designed for amplifiers, featuring a max power dissipation of 70W and a collector-emitter voltage of 700V. It operates at up to 150 °C with a min DC current gain of 5.5. Ideal for high-performance applications in various electronic circuits.

26 A

700 V

SINGLE

5.5

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON