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150 W Power Bipolar Junction Transistors (BJT) 23

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ESM2030DV by STMicroelectronics

ESM2030DV

STMicroelectronics

ESM2030DV by STMicroelectronics is an NPN BJT transistor with a Darlington configuration and built-in diode, ideal for switching applications. It features a max VCEsat of 2.2V, max IC of 67A, and can handle up to 150W power dissipation. With a max operating temperature of 150 °C and collector-emitter voltage of 300V, it is suitable for high-power electronic circuits.

ISOLATED

67 A

300 V

DARLINGTON WITH BUILT-IN DIODE

600 ns

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

150 W

150 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

2.2 V

BU941ZT by STMicroelectronics

BU941ZT

STMicroelectronics

STMicroelectronics' BU941ZT is a NPN BJT with Darlington configuration, ideal for switching applications. It features 2V VCEsat, 150W power dissipation, and 15A collector current. With a max voltage of 350V and operating temperature of 175°C, it's suitable for high-power tasks in various industries.

COLLECTOR

15 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

180 W

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2 V

BUB941ZT by STMicroelectronics

BUB941ZT

STMicroelectronics

STMicroelectronics BUB941ZT is a NPN Darlington transistor with built-in diode and resistor, ideal for amplifier applications. It features a max VCEsat of 1.8V, 150W power dissipation, and can handle up to 15A collector current. The package style is small outline with gull wing terminals for surface mount assembly.

COLLECTOR

15 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

NPN

150 W

150 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AMPLIFIER

SILICON

1.8 V

NTE247 by Nte Electronics

NTE247

Nte Electronics

NTE247 by Nte Electronics is a NPN BJT with Darlington configuration, ideal for amplifier applications. With 150W max power dissipation and 100V max collector-emitter voltage, it offers high performance. Featuring built-in diode and resistor, this transistor has 12A max collector current.

COLLECTOR

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-3

O-MBFM-P2

1

2

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

NPN

150 W

150 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

AMPLIFIER

SILICON

NTE248 by Nte Electronics

NTE248

Nte Electronics

NTE248 by Nte Electronics is a PNP BJT with 150W power dissipation, 100V max collector-emitter voltage, and 12A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with round shape and metal body material.

COLLECTOR

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-3

O-MBFM-P2

1

2

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

PNP

150 W

150 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

AMPLIFIER

SILICON

2STA1943 by STMicroelectronics

2STA1943

STMicroelectronics

2STA1943 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 150W, operates up to 150 °C, and supports collector-emitter voltages of 230V. Its robust design ensures reliable performance in demanding environments.

15 A

230 V

SINGLE

35

TO-264AA

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

150 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

30 MHz

2STC5200 by STMicroelectronics

2STC5200

STMicroelectronics

2STC5200 by STMicroelectronics is a NPN BJT transistor with max. power dissipation of 150W, max. collector-emitter voltage of 230V, and max. collector current of 15A. It is used as an amplifier in applications requiring high power handling capabilities and operates at temperatures up to 150°C.

15 A

230 V

SINGLE

35

TO-264AA

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

150 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

30 MHz

NJW0281G by Onsemi

NJW0281G

Onsemi

NJW0281G by Onsemi is a NPN BJT with 150W power dissipation, 250V max collector-emitter voltage, and 30MHz fT. Ideal for amplifier applications due to its single configuration and high hFE of 75. The transistor's flange mount package with matte tin finish makes it suitable for through-hole mounting in various electronic devices.

15 A

250 V

SINGLE

75

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

BUB323ZT4 by Onsemi

BUB323ZT4

Onsemi

BUB323ZT4 by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 350V, collector current of 10A, and power dissipation of 150W. With a transition frequency of 2MHz, it is suitable for high-power electronic circuits in various industries.

COLLECTOR

10 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSSO-G2

e0

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

150 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

SWITCHING

SILICON

2 MHz

BUB323Z by Onsemi

BUB323Z

Onsemi

BUB323Z by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max power dissipation of 150W, hFE of 500, and VCE of 350V. With a small outline package style and surface mount capability, it operates b/w -65 to 175 °C for various electronic designs.

COLLECTOR

10 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSSO-G2

e0

1

1

2

175 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

150 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

SWITCHING

SILICON

2 MHz

BUH150G by Onsemi

BUH150G

Onsemi

BUH150G by Onsemi is a NPN BJT transistor with 400V VCE, 15A IC, and 150W Ptot. Ideal for switching applications, it has a hFE of 4, operates up to 150°C, and features a flange mount package style.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

15 A

400 V

SINGLE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

150 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

23 MHz

BUB323ZG by Onsemi

BUB323ZG

Onsemi

BUB323ZG by Onsemi is a NPN Power BJT with Darlington configuration, ideal for switching applications. With a max power dissipation of 150W and max collector-emitter voltage of 350V, it operates b/w -65 to 175°C. This surface-mount transistor has a min DC current gain of 500 and can handle up to 10A collector current.

COLLECTOR

10 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSSO-G2

e3

1

1

2

175 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

150 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

2 MHz

2N3772G by Onsemi

2N3772G

Onsemi

2N3772G by Onsemi is a NPN BJT transistor with 150W power dissipation, 60V max collector-emitter voltage, and 20A max collector current. Ideal for switching applications due to its single configuration and -65°C to 200°C operating temperature range.

COLLECTOR

20 A

60 V

SINGLE

5

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

NPN

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

.2 MHz

BU323ZG by Onsemi

BU323ZG

Onsemi

BU323ZG by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 350V, collector current of 10A, and power dissipation of 150W. This transistor has a min DC current gain of 500 and operates at temperatures up to 175°C.

COLLECTOR

10 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

TO-247

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2 MHz

MJH11019G by Onsemi

MJH11019G

Onsemi

The Onsemi MJH11019G is a PNP power BJT with a max collector-emitter voltage of 200V and collector current of 15A. Featuring a Darlington configuration, it has a min DC current gain of 100 and is ideal for switching applications. With a max power dissipation of 150W and operating temperature up to 150°C, this transistor is suitable for high-power electronic circuits.

COLLECTOR

15 A

200 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

MJH11020G by Onsemi

MJH11020G

Onsemi

MJH11020G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 150W and can handle a max collector current of 15A. This transistor is commonly used for switching applications.

COLLECTOR

15 A

200 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

MJH11022G by Onsemi

MJH11022G

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;

COLLECTOR

15 A

250 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

MJW0281A by Onsemi

MJW0281A

Onsemi

The Onsemi MJW0281A is a NPN BJT transistor with 260V VCEO, 15A IC, and 150W Ptot. Ideal for amplifier applications due to its high hFE of 75 and low VCEsat of 1V. With a max operating temperature of 150 °C, it offers reliable performance in various environments.

COLLECTOR

15 A

400 pF

260 V

SINGLE

75

TO-247

R-PSFM-T3

e0

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

150 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

1 V

MJW0302A by Onsemi

MJW0302A

Onsemi

MJW0302A by Onsemi is a PNP BJT transistor with VCEsat of 1V, hFE of 75, and IC of 15A. Ideal for amplifier applications due to its high power dissipation of 150W and max operating temperature of 150 °C. Package style is flange mount with rectangular shape and through-hole terminals.

COLLECTOR

15 A

400 pF

260 V

SINGLE

75

TO-247

R-PSFM-T3

e0

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

150 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

1 V

NJVBUB323ZT4G by Onsemi

NJVBUB323ZT4G

Onsemi

NJVBUB323ZT4G by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 350V, max operating temp of 175°C, and can handle up to 10A collector current. This power transistor comes in a small outline package suitable for surface mount assembly.

COLLECTOR

10 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSSO-G2

e3

1

1

2

175 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

150 W

AEC-Q101

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

2 MHz

2N3716PBFREE by Central Semiconductor

2N3716PBFREE

Central Semiconductor

2N3716PBFREE by Central Semiconductor is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 10A. It is commonly used for switching applications due to its fast rise and fall times of 400ns.

COLLECTOR

10 A

80 V

SINGLE

30

400 ns

TO-3

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

NPN

150 W

400 ns

NO

MATTE TIN OVER NICKEL

PIN/PEG

BOTTOM

SWITCHING

SILICON

4 MHz

700 ns

.8 V

2N6052PBFREE by Central Semiconductor

2N6052PBFREE

Central Semiconductor

2N6052PBFREE by Central Semiconductor is a PNP Darlington power BJT with a max VCEsat of 3V. It is used for switching applications and has a max collector-emitter voltage of 100V.

COLLECTOR

12 A

500 pF

100 V

DARLINGTON

100

TO-3

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

260

PNP

150 W

NO

MATTE TIN

PIN/PEG

BOTTOM

10

SWITCHING

SILICON

4 MHz

3 V

2SA1943N(S1,E,S) by Toshiba

2SA1943N(S1,E,S)

Toshiba

Toshiba's 2SA1943N(S1,E,S) is a PNP BJT with max VCEsat of 3V, ideal for amplifier applications. With a max power dissipation of 150W and max collector-emitter voltage of 230V, it offers high performance in audio amplifiers. Featuring a min hFE of 35 and fT of 30MHz, this transistor ensures efficient signal processing in various electronic circuits.

COLLECTOR

15 A

360 pF

230 V

SINGLE

35

R-XSFM-T3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

PNP

150 W

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

3 V