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125 W Power Bipolar Junction Transistors (BJT) 18

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2STC2510 by STMicroelectronics

2STC2510

STMicroelectronics

2STC2510 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages of 100V. Ideal for high-performance electronic circuits.

25 A

100 V

SINGLE

40

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

20 MHz

STW13009 by STMicroelectronics

STW13009

STMicroelectronics

STW13009 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, max. collector current of 12A, and max. power dissipation of 125W. Ideal for switching applications due to its single configuration and silicon element material in a rectangular package shape with through-hole terminals.

12 A

400 V

SINGLE

10

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STWH13009 by STMicroelectronics

STWH13009

STMicroelectronics

STWH13009 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-power circuits with through-hole mounting.

12 A

400 V

SINGLE

11

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2STA2510 by STMicroelectronics

2STA2510

STMicroelectronics

2STA2510 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages of 100V. Ideal for high-performance electronic circuits.

25 A

100 V

SINGLE

40

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

20 MHz

TIP35CP by STMicroelectronics

TIP35CP

STMicroelectronics

TIP35CP by STMicroelectronics is a NPN Power BJT with 125W power dissipation, 100V max. collector-emitter voltage, and 25A max. collector current. It is used in applications requiring high-power amplification or switching such as audio amplifiers and power supplies due to its robust design and high operating temperature of 150°C.

25 A

100 V

SINGLE

10

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

3 MHz

TIP36CP by STMicroelectronics

TIP36CP

STMicroelectronics

TIP36CP by STMicroelectronics is a PNP BJT with 125W power dissipation, 100V max collector-emitter voltage, and 25A max collector current. Ideal for high-power applications requiring a single configuration transistor in a rectangular package with through-hole terminals.

25 A

100 V

SINGLE

10

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

3 MHz

TIP142TU by Fairchild Semiconductor

TIP142TU

Fairchild Semiconductor

TIP142TU by Fairchild Semiconductor is a NPN power BJT with Darlington configuration, 125W power dissipation, and 10A collector current. Ideal for high-power applications requiring a max collector-emitter voltage of 100V and min DC current gain of 500 hFE. Commonly used in flange mount setups due to its rectangular package shape.

10 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

STW2040 by STMicroelectronics

STW2040

STMicroelectronics

STW2040 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 125 W, operates up to 150 °C, and supports collector-emitter voltages up to 500 V. Ideal for high-performance electronic circuits.

20 A

500 V

SINGLE

10

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

MJW21191G by Onsemi

MJW21191G

Onsemi

The Onsemi MJW21191G is a PNP BJT transistor with 150V VCE, 8A IC, and 125W power dissipation. Ideal for amplifier applications, it has a min hFE of 5 and operates up to 150 °C. The package style is flange mount with a rectangular shape and through-hole terminals.

COLLECTOR

8 A

150 V

SINGLE

5

TO-247AE

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

125 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW21192G by Onsemi

MJW21192G

Onsemi

MJW21192G by Onsemi is a NPN Power BJT with 125W power dissipation, 150V max collector-emitter voltage, and 8A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material.

COLLECTOR

8 A

150 V

SINGLE

5

TO-247AE

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

125 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

BDV64BG by Onsemi

BDV64BG

Onsemi

BDV64BG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100 V and a max collector current of 10 A. It is commonly used as an amplifier in various applications.

COLLECTOR

10 A

100 V

DARLINGTON WITH BUILT-IN RESISTOR

1000

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

.1 MHz

BDV65BG by Onsemi

BDV65BG

Onsemi

BDV65BG by Onsemi is a NPN BJT with 1000 min hFE, 10A max IC, and 125W max power dissipation. Ideal for amplifier applications due to its Darlington configuration with built-in resistor. The transistor's silicon element material ensures reliable performance at up to 150°C operating temperature.

COLLECTOR

10 A

100 V

DARLINGTON WITH BUILT-IN RESISTOR

1000

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

MJE4343G by Onsemi

MJE4343G

Onsemi

MJE4343G by Onsemi is a NPN Power BJT with 160V VCE, 16A IC, and 125W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 8 and fT of 1MHz for efficient performance.

COLLECTOR

16 A

160 V

SINGLE

8

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1 MHz

MJE4353G by Onsemi

MJE4353G

Onsemi

MJE4353G by Onsemi is a PNP BJT transistor with 160V VCEO, 16A IC, and 125W power dissipation. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

16 A

160 V

SINGLE

8

TO-218

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

125 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1 MHz

TIP140G by Onsemi

TIP140G

Onsemi

TIP140G by Onsemi is a NPN power BJT with 125W max power dissipation, 60V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates at up to 150°C and has a min DC current gain of 500 (hFE).

COLLECTOR

10 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz

TIP141G by Onsemi

TIP141G

Onsemi

TIP141G by Onsemi is a NPN Power BJT with 125W power dissipation, 80V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With a min hFE of 500 and operating temperature up to 150°C, this transistor is suitable for various high-power electronic designs.

COLLECTOR

10 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz

TIP145G by Onsemi

TIP145G

Onsemi

TIP145G by Onsemi is a PNP BJT with 125W power dissipation, 60V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. With a min hFE of 500 and max operating temp of 150 °C, this transistor is suitable for high-power requirements.

COLLECTOR

10 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

TO-218

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

125 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz

TIP35AG by Onsemi

TIP35AG

Onsemi

TIP35AG by Onsemi is a NPN Power BJT with 125W power dissipation, 60V max collector-emitter voltage, and 25A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min DC current gain of 15 and nominal transition frequency of 3MHz.

COLLECTOR

25 A

60 V

SINGLE

15

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz