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.3 W Other Function Transistors 18

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
2N4338-E3 by Vishay Intertechnology

2N4338-E3

Vishay Intertechnology

Vishay Intertechnology's 2N4338-E3 is an N-CHANNEL transistor with a max power dissipation of 0.3W and max operating temp of 200°C. It utilizes JUNCTION technology, has matte tin terminal finish, and can withstand peak reflow temp of 260°C. Ideal for various electronic applications requiring high temperature resistance.

JUNCTION

e3

1

200 Cel

260

N-CHANNEL

.3 W

Other Transistors

NO

MATTE TIN

40

2N4339-E3 by Vishay Intertechnology

2N4339-E3

Vishay Intertechnology

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: JUNCTION; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 200 Cel;

JUNCTION

e3

1

200 Cel

N-CHANNEL

.3 W

Other Transistors

NO

Matte Tin (Sn)

BFG520,235 by NXP Semiconductors

BFG520,235

NXP Semiconductors

BFG520,235 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Perfect for RF amplification in compact devices.

.07 A

SINGLE

60

e3

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFG520/X,235 by NXP Semiconductors

BFG520/X,235

NXP Semiconductors

BFG520/X,235 by NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Its surface mount design ensures efficient integration in compact circuits.

.07 A

SINGLE

60

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

BFG520/XR,235 by NXP Semiconductors

BFG520/XR,235

NXP Semiconductors

BFG520/XR,235 from NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 60, and operates up to 175 °C. Its surface mount design enhances versatility in electronic circuits.

.07 A

SINGLE

60

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

BF245A,126 by NXP Semiconductors

BF245A,126

NXP Semiconductors

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: JUNCTION; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);

JUNCTION

e3

150 Cel

N-CHANNEL

.3 W

Other Transistors

NO

Matte Tin (Sn)

BFG67,235 by NXP Semiconductors

BFG67,235

NXP Semiconductors

BFG67,235 by NXP Semiconductors is an NPN single transistor ideal for high-frequency applications with a nominal transition frequency of 7500 MHz. It supports a max collector current of 50 mA and operates up to 175 °C. This surface-mount device excels in RF amplification tasks.

.05 A

SINGLE

60

e3

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

7500 MHz

BFQ67W,135 by NXP Semiconductors

BFQ67W,135

NXP Semiconductors

BFQ67W,135 by NXP Semiconductors is a single NPN transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, hFE of 60, and operates up to 150 °C. This versatile component is perfect for various electronic circuits requiring efficient signal amplification.

.05 A

SINGLE

60

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFR30,235 by NXP Semiconductors

BFR30,235

NXP Semiconductors

BFR30,235 by NXP Semiconductors is an N-channel FET designed for surface mount applications. It features a max power dissipation of 0.3 W and operates at temperatures up to 150 °C. Ideal for various electronic circuits, it ensures reliable performance in demanding environments.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.3 W

Other Transistors

YES

TIN

30

BFR31,235 by NXP Semiconductors

BFR31,235

NXP Semiconductors

BFR31,235 by NXP Semiconductors is an N-CHANNEL transistor with a max power dissipation of 0.3W and a max operating temperature of 150°C. It is surface mountable and commonly used in various electronic applications.

JUNCTION

e3

1

150 Cel

260

N-CHANNEL

.3 W

Other Transistors

YES

TIN

30

BFR520,235 by NXP Semiconductors

BFR520,235

NXP Semiconductors

NXP Semiconductors' BFR520,235 is an NPN transistor with a single configuration and surface-mount capability. It features a max power dissipation of 0.3W, min DC current gain of 60, and max operating temp of 150°C. Ideal for applications requiring low collector current such as signal amplification in electronic circuits.

.07 A

SINGLE

60

e3

1

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFR93AW,135 by NXP Semiconductors

BFR93AW,135

NXP Semiconductors

NXP Semiconductors' BFR93AW,135 is an NPN transistor with a single configuration and surface-mount capability. It boasts a max power dissipation of 0.3W, DC current gain of 40, and transition frequency of 4500MHz. Ideal for applications requiring high-frequency signal amplification in environments up to 150°C.

.035 A

SINGLE

40

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

4500 MHz

BFS17A,235 by NXP Semiconductors

BFS17A,235

NXP Semiconductors

NXP Semiconductors' BFS17A,235 is an NPN transistor with a single configuration and surface-mount capability. It features a max power dissipation of 0.3W, min DC current gain of 20, and max operating temp of 175°C. Ideal for applications requiring low collector current such as signal amplification in electronic circuits.

.025 A

SINGLE

20

e3

1

1

175 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFS17W,135 by NXP Semiconductors

BFS17W,135

NXP Semiconductors

NXP Semiconductors' BFS17W,135 is an NPN transistor with a max power dissipation of 0.3W and fT of 1600MHz. Ideal for applications requiring a single configuration, such as surface-mount designs in electronics operating up to 150°C with a collector current of 0.05A.

.05 A

SINGLE

25

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

1600 MHz

BFS520,135 by NXP Semiconductors

BFS520,135

NXP Semiconductors

BFS520,135 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 60, and operates up to 150 °C. Perfect for efficient signal amplification in compact designs.

.07 A

SINGLE

60

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

BFR94A,215 by NXP Semiconductors

BFR94A,215

NXP Semiconductors

BFR94A,215 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 65, and operates up to 150 °C. This versatile component is perfect for RF amplification tasks.

.025 A

SINGLE

65

1

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

BFR94AW,115 by NXP Semiconductors

BFR94AW,115

NXP Semiconductors

BFR94AW,115 by NXP Semiconductors is an NPN transistor designed for high-frequency applications with a nominal transition frequency of 3.5 GHz. It supports a max power dissipation of 0.3 W and operates up to 150 °C. Ideal for surface mount configurations in RF circuits.

.025 A

SINGLE

65

e3

1

150 Cel

260

NPN

.3 W

Other Transistors

YES

TIN

30

3500 MHz

PMR670UPE,115 by NXP Semiconductors

PMR670UPE,115

NXP Semiconductors

PMR670UPE,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET designed for efficient power management. It supports a max drain current of 0.48 A and operates up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into various circuits.

SINGLE

.48 A

.48 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.3 W

Other Transistors

YES

TIN

30