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Alliance Memory SRAM 23

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
AS6C4008-55STINTR by Alliance Memory

AS6C4008-55STINTR

Alliance Memory

Alliance Memory's AS6C4008-55STINTR is a 512Kx8 SRAM with 55ns access time, operating at 3/5V. Ideal for industrial applications, it features a small outline package and common I/O type in a rectangular shape. With 32 terminals and CMOS technology, this asynchronous memory offers high performance in various electronic devices.

55 ns

COMMON

R-PDSO-G32

4194304 bit

STANDARD SRAM

8

3

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/5

Not Qualified

.00003 Amp

1.5 V

SRAMs

60 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

AS6C4008-55ZINTR by Alliance Memory

AS6C4008-55ZINTR

Alliance Memory

Alliance Memory's AS6C4008-55ZINTR is a 512Kx8 SRAM with 55ns access time, operating at 3/5V. Ideal for industrial applications, it features a small outline package, common I/O type, and 3-state output characteristics.

55 ns

COMMON

R-PDSO-G32

e3

4194304 bit

STANDARD SRAM

8

3

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/5

Not Qualified

.00003 Amp

1.5 V

SRAMs

60 mA

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

AS6C4008A-55ZIN by Alliance Memory

AS6C4008A-55ZIN

Alliance Memory

Alliance Memory's AS6C4008A-55ZIN is a 512Kx8 SRAM with 55ns access time, operating at 3.6V max voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and gull wing terminals, this memory IC offers reliable performance in harsh environments.

55 ns

R-PDSO-G32

e3/e6

20.95 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

40

11.76 mm

AS7C316096A-10TINTR by Alliance Memory

AS7C316096A-10TINTR

Alliance Memory

Alliance Memory's AS7C316096A-10TINTR is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, common I/O type, and 3-state output characteristics.

10 ns

COMMON

R-PDSO-G48

e3/e6

18.4 mm

16777216 bit

STANDARD SRAM

8

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.04 Amp

1.5 V

SRAMs

160 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

12 mm

AS7C316096A-10TIN by Alliance Memory

AS7C316096A-10TIN

Alliance Memory

Alliance Memory's AS7C316096A-10TIN is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, 48 terminals, and common I/O type. With a memory density of 16Mbit, this CMOS technology-based chip offers reliable performance in various electronic devices.

10 ns

COMMON

R-PDSO-G48

e3/e6

18.4 mm

16777216 bit

STANDARD SRAM

8

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.04 Amp

1.5 V

SRAMs

160 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

12 mm

AS6C3216-55TIN by Alliance Memory

AS6C3216-55TIN

Alliance Memory

Alliance Memory's AS6C3216-55TIN is a 2MX16 SRAM with 55 ns access time, operating at 3V. Ideal for industrial applications, it offers a memory density of 33554432 bits and features a small outline package with thin profile. With common I/O type and asynchronous operation, this CMOS technology-based SRAM is suitable for various parallel memory applications.

55 ns

8

COMMON

R-PDSO-G48

e3/e6

18.4 mm

33554432 bit

STANDARD SRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.002 Amp

1.2 V

SRAMs

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

12 mm

AS7C316098A-10TIN by Alliance Memory

AS7C316098A-10TIN

Alliance Memory

Alliance Memory's AS7C316098A-10TIN is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and offers 3-state output capability. With a max supply voltage of 3.6V, this CMOS technology memory chip supports parallel operation with common I/O type.

10 ns

COMMON

R-PDSO-G48

e3/e6

18.4 mm

16777216 bit

STANDARD SRAM

16

3

1

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

YES

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

.04 Amp

1.5 V

160 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

40

12 mm

AS7C1024B-15JCNTR by Alliance Memory

AS7C1024B-15JCNTR

Alliance Memory

Alliance Memory's AS7C1024B-15JCNTR is a 128Kx8 SRAM with 15ns access time, ideal for commercial applications. Operating at 5V, it offers 1048576-bit memory density and features asynchronous mode. With a small outline package style, it is suitable for surface mount designs in various electronic devices.

15 ns

R-PDSO-J32

20.995 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.7084 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

10.16 mm

AS7C316098A-10BINTR by Alliance Memory

AS7C316098A-10BINTR

Alliance Memory

Alliance Memory's AS7C316098A-10BINTR is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and offers high memory density of 16Mbit. With parallel interface and CMOS technology, this IC is suitable for various embedded systems requiring fast and reliable data storage.

10 ns

R-PBGA-B48

8 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

AS7C34096A-12JINTR by Alliance Memory

AS7C34096A-12JINTR

Alliance Memory

Alliance Memory's AS7C34096A-12JINTR is a 512Kx8 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it offers parallel interface, small outline package style, and moisture sensitivity level of 3.

12 ns

R-PDSO-J36

e3/e6

23.495 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.7592 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

DUAL

10.16 mm

AS7C38096A-10BIN by Alliance Memory

AS7C38096A-10BIN

Alliance Memory

Alliance Memory's AS7C38096A-10BIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and CMOS technology. With parallel interface and 8388608-bit memory density, it suits high-speed data processing needs.

10 ns

R-PBGA-B48

8 mm

8388608 bit

STANDARD SRAM

8

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

AS7C38096A-10TIN by Alliance Memory

AS7C38096A-10TIN

Alliance Memory

Alliance Memory's AS7C38096A-10TIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it offers a memory density of 8388608 bits and operates in parallel mode with a package size of 18.415mm x 10.16mm x 1.2mm.

10 ns

R-PDSO-G44

18.415 mm

8388608 bit

STANDARD SRAM

8

3

1

44

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

40

10.16 mm

AS7C34098A-10TINTR by Alliance Memory

AS7C34098A-10TINTR

Alliance Memory

Alliance Memory's AS7C34098A-10TINTR is a 256Kx16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With a memory density of 4Mbit, this CMOS technology-based chip offers reliable parallel data storage.

10 ns

R-PDSO-G44

e3/e6

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

AS6C4008-55BIN by Alliance Memory

AS6C4008-55BIN

Alliance Memory

Alliance Memory's AS6C4008-55BIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and common I/O type. Ideal for industrial applications requiring fast and reliable memory performance.

55 ns

COMMON

R-PBGA-B36

8 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA36,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3/5

Not Qualified

1.2 mm

.00003 Amp

2 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

AS6C4008-55STIN by Alliance Memory

AS6C4008-55STIN

Alliance Memory

Alliance Memory's AS6C4008-55STIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package with dual terminals and common I/O type. With low standby voltage of 2V and power consumption of 60mA, it offers reliable performance in various electronic devices.

55 ns

COMMON

R-PDSO-G32

11.8 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

LSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/5

Not Qualified

1.25 mm

.00003 Amp

2 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

AS6C4008-55TIN by Alliance Memory

AS6C4008-55TIN

Alliance Memory

Alliance Memory's AS6C4008-55TIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package and common I/O type. With 524288 words and parallel interface, it offers reliable memory storage in compact systems.

55 ns

COMMON

R-PDSO-G32

18.4 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/5

Not Qualified

1.2 mm

.00003 Amp

2 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

8 mm

AS6C1008-55TIN by Alliance Memory

AS6C1008-55TIN

Alliance Memory

Alliance Memory's AS6C1008-55TIN is a 128Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package and common I/O type. With 131072 words and 1048576-bit memory density, this CMOS technology-based chip offers reliable performance in various electronic devices.

55 ns

COMMON

R-PDSO-G32

18.4 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

1.5 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

40

8 mm

AS7C31026C-12BIN by Alliance Memory

AS7C31026C-12BIN

Alliance Memory

Alliance Memory's AS7C31026C-12BIN is a 64Kx16 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and operates in asynchronous mode. With parallel interface and 1048576-bit memory density, it offers fast performance in compact designs.

12 ns

R-PBGA-B48

e3/e6

8 mm

1048576 bit

STANDARD SRAM

16

3

1

48

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

Not Qualified

1.34 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

40

6 mm

AS6C4008-55SINTR by Alliance Memory

AS6C4008-55SINTR

Alliance Memory

Alliance Memory's AS6C4008-55SINTR is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features common I/O type and 3-state output characteristics in a small outline package. With parallel interface and low standby current, it suits various embedded systems.

55 ns

COMMON

R-PDSO-G32

e3/e6

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

3/5

Not Qualified

2.997 mm

.00003 Amp

1.5 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

11.303 mm

AS7C351232-10BINTR by Alliance Memory

AS7C351232-10BINTR

Alliance Memory

Alliance Memory's AS7C351232-10BINTR is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a thin profile grid array package and CMOS technology for reliable performance in harsh environments.

10 ns

R-PBGA-B90

13 mm

16777216 bit

STANDARD SRAM

32

3

1

90

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

AS7C351232-10BIN by Alliance Memory

AS7C351232-10BIN

Alliance Memory

Alliance Memory's AS7C351232-10BIN is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and is ideal for industrial applications requiring fast parallel memory solutions.

10 ns

R-PBGA-B90

13 mm

16777216 bit

STANDARD SRAM

32

3

1

90

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

AS6C1008-55SINL by Alliance Memory

AS6C1008-55SINL

Alliance Memory

Alliance Memory's AS6C1008-55SINL is a 128Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it offers parallel interface, small outline package, and operates in temperature range of -40 to 85°C.

55 ns

LG-MAX

R-PDSO-G32

20.75 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

2.997 mm

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

11.303 mm

AS6C4008A-55ZINTR by Alliance Memory

AS6C4008A-55ZINTR

Alliance Memory

STANDARD SRAM; Moisture Sensitivity Level (MSL): 3;

STANDARD SRAM

3