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TSOP2 SRAM 49

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CY7C1041CV33-8ZSXI by Cypress Semiconductor

CY7C1041CV33-8ZSXI

Cypress Semiconductor

CY7C1041CV33-8ZSXI by Cypress Semiconductor is a 256Kx16 SRAM with 8ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and parallel interface. Ideal for high-speed memory applications in industrial environments.

8 ns

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

Not Qualified

1.194 mm

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1021BN-15ZSXET by Cypress Semiconductor

CY7C1021BN-15ZSXET

Cypress Semiconductor

CY7C1021BN-15ZSXET by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It is designed for automotive applications, featuring a small outline package and thin profile. The memory IC has a max standby current of 0.015A and offers 3-STATE output characteristics.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

AEC-Q100

1.194 mm

.015 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1061DV33-10ZSXIT by Cypress Semiconductor

CY7C1061DV33-10ZSXIT

Cypress Semiconductor

CY7C1061DV33-10ZSXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 175mA max supply current. Ideal for industrial applications requiring high-speed memory operations in a compact thin profile package.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.025 Amp

2 V

SRAMs

175 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1069DV33-10ZSXIT by Cypress Semiconductor

CY7C1069DV33-10ZSXIT

Cypress Semiconductor

CY7C1069DV33-10ZSXIT by Cypress Semiconductor is a 3.3V SRAM with 2Mx8 organization, operating at -40 to 85°C. It features a fast access time of 10ns, ideal for industrial applications requiring high-speed memory solutions in a compact thin profile package.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

8

3

1

54

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.025 Amp

2 V

SRAMs

175 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1061AV33-10ZXCT by Cypress Semiconductor

CY7C1061AV33-10ZXCT

Cypress Semiconductor

CY7C1061AV33-10ZXCT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, operating in asynchronous mode. It features 10ns access time, 70°C max temp, and 275mA supply current. Ideal for applications requiring fast memory access in commercial-grade devices.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.05 Amp

2 V

SRAMs

275 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1061AV33-10ZXIT by Cypress Semiconductor

CY7C1061AV33-10ZXIT

Cypress Semiconductor

CY7C1061AV33-10ZXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 16-bit memory width. Ideal for industrial applications requiring fast and reliable parallel memory operations in a compact package.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.05 Amp

2 V

SRAMs

275 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm

IS61WV25616EDBLL-8TLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-8TLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-8TLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. Ideal for industrial applications, it offers fast access time of 8ns and low standby current of 0.006Amp. With a compact design and common I/O type, this CMOS technology-based memory IC is suitable for various parallel data processing tasks.

8 ns

COMMON

R-PDSO-G44

e3

18.41 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

45 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

IS61WV25616EDBLL-8TLI by Integrated Silicon Solution

IS61WV25616EDBLL-8TLI

Integrated Silicon Solution

IS61WV25616EDBLL-8TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous mode, common I/O type, and 8ns access time. Ideal for applications requiring fast and reliable memory storage in compact form factor.

8 ns

COMMON

R-PDSO-G44

e3

18.41 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

45 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

AS6C4008A-55ZIN by Alliance Memory

AS6C4008A-55ZIN

Alliance Memory

Alliance Memory's AS6C4008A-55ZIN is a 512Kx8 SRAM with 55ns access time, operating at 3.6V max voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and gull wing terminals, this memory IC offers reliable performance in harsh environments.

55 ns

R-PDSO-G32

e3/e6

20.95 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

40

11.76 mm

IS61WV6416EEBLL-10TLI by Integrated Silicon Solution

IS61WV6416EEBLL-10TLI

Integrated Silicon Solution

IS61WV6416EEBLL-10TLI by Integrated Silicon Solution is a 64Kx16 SRAM with 10ns access time, operating at 3.3V. It features a small outline package, suitable for industrial temperature grades. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

10 ns

COMMON

R-PDSO-G44

18.41 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.004 Amp

2 V

SRAMs

25 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

CY7C1049DV33-10ZSXIT by Cypress Semiconductor

CY7C1049DV33-10ZSXIT

Cypress Semiconductor

CY7C1049DV33-10ZSXIT by Cypress Semiconductor is a 512Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a parallel interface, 10ns access time, and low standby current of 0.01Amp. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

8

3

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.01 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

AS7C38096A-10TIN by Alliance Memory

AS7C38096A-10TIN

Alliance Memory

Alliance Memory's AS7C38096A-10TIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it offers a memory density of 8388608 bits and operates in parallel mode with a package size of 18.415mm x 10.16mm x 1.2mm.

10 ns

R-PDSO-G44

18.415 mm

8388608 bit

STANDARD SRAM

8

3

1

44

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

40

10.16 mm

AS7C34098A-10TINTR by Alliance Memory

AS7C34098A-10TINTR

Alliance Memory

Alliance Memory's AS7C34098A-10TINTR is a 256Kx16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With a memory density of 4Mbit, this CMOS technology-based chip offers reliable parallel data storage.

10 ns

R-PDSO-G44

e3/e6

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

HM216514TTI5SE by Renesas Electronics

HM216514TTI5SE

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Words: 524288 words;

55 ns

R-PDSO-G44

18.41 mm

8388608 bit

STANDARD SRAM

16

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

CY7C1041CV33-12ZSXE by Cypress Semiconductor

CY7C1041CV33-12ZSXE

Cypress Semiconductor

CY7C1041CV33-12ZSXE by Cypress Semiconductor is a 256KX16 SRAM with 3.3V supply, operating at -40 to 125 °C. It features 12 ns access time, 44 terminals in small outline package for automotive applications. With common I/O type and parallel technology, it offers 4194304 bit memory density.

12 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

SRAMs

120 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1020CV33-15ZSXET by Cypress Semiconductor

CY7C1020CV33-15ZSXET

Cypress Semiconductor

CY7C1020CV33-15ZSXET by Cypress Semiconductor is a 32KX16 SRAM with 3.3V supply, 15ns access time, and 44 terminals. Ideal for automotive applications due to AEC-Q100 screening level and small outline package. Operating in asynchronous mode, it offers common I/O type and 3-STATE output characteristics.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

524288 bit

STANDARD SRAM

16

3

1

44

32768 words

32K

ASYNCHRONOUS

125 Cel

-40 Cel

32KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

.01 Amp

3 V

SRAMs

85 mA

3.63 V

2.97 V

3.3

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1021BN-15ZXIT by Cypress Semiconductor

CY7C1021BN-15ZXIT

Cypress Semiconductor

CY7C1021BN-15ZXIT by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1019CV33-12ZXCT by Cypress Semiconductor

CY7C1019CV33-12ZXCT

Cypress Semiconductor

CY7C1019CV33-12ZXCT by Cypress: 128KX8 SRAM with 3.3V, 12ns access time, and 1.27mm terminal pitch. Ideal for commercial applications requiring fast, asynchronous memory operations in a small outline package.

12 ns

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

Not Qualified

1.2 mm

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

20

10.16 mm

CY7C1061BV33-8ZXI by Cypress Semiconductor

CY7C1061BV33-8ZXI

Cypress Semiconductor

CY7C1061BV33-8ZXI by Cypress Semiconductor is a 3.3V, 1MX16 SRAM with 8ns access time. It operates in industrial temperature range (-40 to 85°C) and has a memory density of 16777216 bits. Ideal for applications requiring fast parallel memory access in compact designs.

8 ns

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

Not Qualified

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

IS61WV25616BLS-25TLI by Integrated Silicon Solution

IS61WV25616BLS-25TLI

Integrated Silicon Solution

IS61WV25616BLS-25TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features 25ns max access time, 4194304-bit memory density, and supports asynchronous operation. Ideal for applications requiring fast and reliable data storage in harsh environments.

25 ns

COMMON

R-PDSO-G44

e3

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.5/3.3

Not Qualified

1.2 mm

.009 Amp

2 V

SRAMs

25 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10

10.16 mm

CY7C1059DV33-12ZSXI by Cypress Semiconductor

CY7C1059DV33-12ZSXI

Cypress Semiconductor

CY7C1059DV33-12ZSXI by Cypress Semiconductor is a 1MX8 SRAM with 3.3V supply, 12ns access time, and 85°C max temp. Ideal for industrial applications requiring fast, common I/O asynchronous memory in a small outline package.

12 ns

COMMON

R-PDSO-G44

e3

18.415 mm

8388608 bit

STANDARD SRAM

8

3

1

44

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.02 Amp

2 V

SRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

40

10.16 mm

N64S830HAT22I by Onsemi

N64S830HAT22I

Onsemi

N64S830HAT22I by Onsemi is an 8Kx8 SRAM with 3.6V max supply voltage, 20MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.

20 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

2.5/3.3

Not Qualified

1.2 mm

.000004 Amp

2.3 V

SRAMs

10 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

M68AW256ML70ND6T by STMicroelectronics

M68AW256ML70ND6T

STMicroelectronics

M68AW256ML70ND6T from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.

70 ns

COMMON

R-PDSO-G44

e0

18.41 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000009 Amp

1.5 V

SRAMs

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

CY7C1019BV33-15ZI by Cypress Semiconductor

CY7C1019BV33-15ZI

Cypress Semiconductor

CY7C1019BV33-15ZI by Cypress Semiconductor is a 128Kx8 SRAM with 15ns access time, operating at 3.3V. It is ideal for industrial applications requiring high-speed and low-power memory solutions in a small outline package.

15 ns

R-PDSO-G32

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

10.16 mm

M68AW512ML70ND6 by STMicroelectronics

M68AW512ML70ND6

STMicroelectronics

M68AW512ML70ND6 from STMicroelectronics is a 512Kx16 asynchronous SRAM with a max access time of 70 ns. It operates b/w 2.7V and 3.6V, suitable for industrial applications due to its -40 °C to 85 °C temp range. Its compact SOIC package ensures efficient surface mounting.

70 ns

R-PDSO-G44

e0

18.41 mm

8388608 bit

STANDARD SRAM

16

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

IDT71016S12PHGI by Integrated Device Technology

IDT71016S12PHGI

Integrated Device Technology

IDT71016S12PHGI by Integrated Device Technology is a 64KX16 SRAM with an operating mode of asynchronous and common input/output type. It has a max access time of 12 ns and is commonly used in industrial applications.

12 ns

COMMON

R-PDSO-G44

e3

18.41 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.01 Amp

4.5 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.8 mm

DUAL

30

10.16 mm

IDT71016S12PHGI8 by Integrated Device Technology

IDT71016S12PHGI8

Integrated Device Technology

IDT71016S12PHGI8 by Integrated Device Technology is a 64Kx16 SRAM with 3-STATE output, operating at 5V. It features a max access time of 12ns and is designed for industrial applications requiring fast and reliable memory storage. With a compact rectangular package style and surface-mount capability, it offers high performance in a small footprint.

12 ns

COMMON

R-PDSO-G44

e3

18.41 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.01 Amp

4.5 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.8 mm

DUAL

30

10.16 mm

IDT71V124SA20PHGI by Integrated Device Technology

IDT71V124SA20PHGI

Integrated Device Technology

IDT71V124SA20PHGI by Integrated Device Technology is a 128Kx8 SRAM with 3.3V supply, operating in asynchronous mode. It features a max access time of 20ns and offers 131072 words of memory. Ideal for industrial applications requiring fast and reliable data storage with common I/O type and 3-STATE output characteristics.

20 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3 V

SRAMs

115 mA

3.6 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

10.16 mm

IDT71V124SA20PHGI8 by Integrated Device Technology

IDT71V124SA20PHGI8

Integrated Device Technology

IDT71V124SA20PHGI8 is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 20ns access time, and 1.27mm terminal pitch. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

20 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3 V

SRAMs

115 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

10.16 mm

IS61LV51216-10TLI by Integrated Silicon Solution

IS61LV51216-10TLI

Integrated Silicon Solution

IS61LV51216-10TLI by Integrated Silicon Solution is a 512KX16 SRAM with 10 ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and 44 terminals for parallel interfacing. Ideal for high-speed memory applications in industrial environments.

10 ns

COMMON

R-PDSO-G44

e3

18.415 mm

8388608 bit

STANDARD SRAM

16

3

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.025 Amp

3.14 V

SRAMs

110 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10

10.16 mm

IS62WV10248DBLL-55TLI by Integrated Silicon Solution

IS62WV10248DBLL-55TLI

Integrated Silicon Solution

IS62WV10248DBLL-55TLI by Integrated Silicon Solution is a 1MX8 SRAM with 3-STATE output, operating at 55 ns. It features a supply voltage of 1.8V, suitable for commercial applications requiring fast and reliable memory access in a small outline package. With a memory density of 8388608 bit and parallel interface, it offers high-speed data storage solutions.

55 ns

COMMON

R-PDSO-G44

e3

18.415 mm

8388608 bit

STANDARD SRAM

8

3

1

44

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.00004 Amp

1.4 V

SRAMs

22 mA

2.2 V

1.65 V

1.8

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

CY7C1021CV33-10ZXI by Cypress Semiconductor

CY7C1021CV33-10ZXI

Cypress Semiconductor

CY7C1021CV33-10ZXI by Cypress Semiconductor is a 64KX16 SRAM with 3.3V supply, 10ns access time, and 44 terminals. It operates in industrial temperatures and has a memory density of 1048576 bits. Ideal for applications requiring fast, common I/O type asynchronous memory with small outline package style.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.005 Amp

3 V

SRAMs

90 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1041CV33-20ZSXE by Cypress Semiconductor

CY7C1041CV33-20ZSXE

Cypress Semiconductor

CY7C1041CV33-20ZSXE by Cypress is a 256Kx16 SRAM with 3.3V supply, operating at -40 to 125°C. It features asynchronous mode, 20ns access time, and AEC-Q100 screening for automotive applications. The memory IC has a compact thin profile package with 0.8mm terminal pitch suitable for space-constrained designs.

20 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

.015 Amp

3 V

SRAMs

75 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY62157DV30LL-55ZSXI by Cypress Semiconductor

CY62157DV30LL-55ZSXI

Cypress Semiconductor

CY62157DV30LL-55ZSXI by Cypress Semiconductor is a 512Kx16 SRAM with 3.3V nominal voltage, 55ns access time, and 8388608-bit memory density. It is used in industrial applications requiring fast and reliable data storage with a parallel interface.

55 ns

COMMON

R-PDSO-G44

e4

18.415 mm

8388608 bit

STANDARD SRAM

16

3

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.5/3.3

Not Qualified

1.194 mm

.000004 Amp

1.5 V

SRAMs

15 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

IS61LV25616AL-10TLI by Integrated Silicon Solution

IS61LV25616AL-10TLI

Integrated Silicon Solution

IS61LV25616AL-10TLI by Integrated Silicon Solution is a 256KX16 SRAM with 3.3V supply, operating at -40 to 85 °C. It features 10ns access time, 110mA max supply current, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in compact form factor.

10 ns

COMMON

R-PDSO-G44

e3

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.015 Amp

2 V

SRAMs

110 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

IS61C6416AL-12TI by Integrated Silicon Solution

IS61C6416AL-12TI

Integrated Silicon Solution

IS61C6416AL-12TI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-G44

e0

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

Not Qualified

1.2 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

IS64C6416AL-15TLA3 by Integrated Silicon Solution

IS64C6416AL-15TLA3

Integrated Silicon Solution

IS64C6416AL-15TLA3 by Integrated Silicon Solution is a 64Kx16 SRAM with 5V supply, 15ns access time, and AEC-Q100 screening. Ideal for automotive applications due to its small outline package and wide operating temperature range from -40°C to 125°C. With common I/O type and 3-state output characteristics, it offers reliable performance in demanding environments.

15 ns

COMMON

R-PDSO-G44

e3

18.415 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

AEC-Q100

1.2 mm

.000125 Amp

2 V

SRAMs

60 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.8 mm

DUAL

10

10.16 mm

CY7C1041D-10ZSXI by Cypress Semiconductor

CY7C1041D-10ZSXI

Cypress Semiconductor

CY7C1041D-10ZSXI by Cypress Semiconductor is a 256Kx16 SRAM with 10ns access time, operating at 5V. It features a small outline package, GULL WING terminals, and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

IS61LV6416-10TLI by Integrated Silicon Solution

IS61LV6416-10TLI

Integrated Silicon Solution

IS61LV6416-10TLI by Integrated Silicon Solution is a 64Kx16 SRAM with 3.3V supply voltage, operating at -40 to 85°C. It features a 10ns access time, 44 terminals in a small outline package, and is ideal for industrial applications requiring fast and reliable memory storage.

10 ns

COMMON

R-PDSO-G44

e3

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3.14 V

SRAMs

130 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

IS63LV1024L-10TLI by Integrated Silicon Solution

IS63LV1024L-10TLI

Integrated Silicon Solution

IS63LV1024L-10TLI by Integrated Silicon Solution is a 128Kx8 SRAM with 10ns access time, operating at 3.3V. It features a small outline package suitable for industrial applications, offering 131072 words of memory with 1048576 bits density in an asynchronous mode.

10 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.0015 Amp

2 V

SRAMs

105 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

10

10.16 mm

CY7C1019CV33-10ZXI by Cypress Semiconductor

CY7C1019CV33-10ZXI

Cypress Semiconductor

CY7C1019CV33-10ZXI by Cypress Semiconductor is a 128Kx8 SRAM with 3.3V supply, 10ns access time, and 85°C operating temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

10 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.005 Amp

3 V

SRAMs

80 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

10.16 mm

CY7C1019CV33-12ZXC by Cypress Semiconductor

CY7C1019CV33-12ZXC

Cypress Semiconductor

CY7C1019CV33-12ZXC by Cypress Semiconductor is a 128Kx8 SRAM with 3.3V supply voltage, operating at 0-70°C. It features asynchronous mode, 12ns access time, and 1.27mm terminal pitch. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

12 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.005 Amp

2 V

SRAMs

75 mA

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

10.16 mm

CY7C1021BN-12ZXC by Cypress Semiconductor

CY7C1021BN-12ZXC

Cypress Semiconductor

CY7C1021BN-12ZXC by Cypress Semiconductor is a 64KX16 SRAM with 12 ns access time, operating at 5V. It features a small outline package and GULL WING terminals, suitable for commercial applications requiring fast and reliable memory storage.

12 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1021BN-15ZXI by Cypress Semiconductor

CY7C1021BN-15ZXI

Cypress Semiconductor

CY7C1021BN-15ZXI by Cypress Semiconductor is a 64KX16 SRAM with 3-STATE output, operating at 5V. It has a fast access time of 15ns and industrial temperature grade. Ideal for applications requiring high-speed memory operations in harsh environments.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1041BNV33L-15ZXC by Cypress Semiconductor

CY7C1041BNV33L-15ZXC

Cypress Semiconductor

CY7C1041BNV33L-15ZXC by Cypress Semiconductor is a 256KX16 SRAM with 3.3V supply, 15ns access time, and 170mA supply current. It is used in commercial applications requiring fast and reliable memory storage in a small outline package.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.00033 Amp

2 V

SRAMs

170 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1019CV33-10ZXCT by Cypress Semiconductor

CY7C1019CV33-10ZXCT

Cypress Semiconductor

CY7C1019CV33-10ZXCT by Cypress Semiconductor is a 128KX8 SRAM with 131072 words, operating at 3.3V. It has a max access time of 10 ns and is ideal for commercial applications requiring fast and reliable memory storage in a small outline package.

10 ns

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

1.27 mm

DUAL

10.16 mm

CY7C1021BL-15ZXIT by Cypress Semiconductor

CY7C1021BL-15ZXIT

Cypress Semiconductor

CY7C1021BL-15ZXIT by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It has a small outline, thin profile package and is suitable for industrial applications requiring fast and reliable parallel memory storage.

15 ns

R-PDSO-G44

18.415 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.194 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

CY7C1061AV33-10ZXC by Cypress Semiconductor

CY7C1061AV33-10ZXC

Cypress Semiconductor

CY7C1061AV33-10ZXC by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 275mA max supply current. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.

10 ns

COMMON

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.05 Amp

3 V

SRAMs

275 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

20

10.16 mm