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TSOP2 SRAM 49

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
IS62WV10248EBLL-45TLI-TR by Integrated Silicon Solution

IS62WV10248EBLL-45TLI-TR

Integrated Silicon Solution

IS62WV10248EBLL-45TLI-TR by Integrated Silicon Solution is a 1MX8 SRAM with 1048576 words and 8388608 bit memory density. Operating at -40 to 85 °C, it has a max access time of 45 ns. Ideal for industrial applications requiring fast, asynchronous memory with a parallel interface.

45 ns

R-PDSO-G44

18.41 mm

8388608 bit

STANDARD SRAM

8

1

44

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm