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INDUSTRIAL Other Function Memory ICs 106

Other Function Memory ICs
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Self Refresh Sequential Burst Length Serial Bus Type Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Write Protection
MR256A08BCMA35R by Everspin Technologies

MR256A08BCMA35R

Everspin Technologies

MR256A08BCMA35R by Everspin Technologies is a 32KX8 MEMORY CIRCUIT with 262144 bit Memory Density. Operating at 3.3V, it has a Max Access Time of 35ns and Industrial Temperature Grade. Suitable for applications requiring low profile, fine pitch GRID ARRAY packages in industrial environments.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

3

1

48

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

MR256A08BCMA35 by Everspin Technologies

MR256A08BCMA35

Everspin Technologies

MR256A08BCMA35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for industrial applications requiring low profile, fine pitch package style and asynchronous operation.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

3

1

48

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

MR256A08BCYS35R by Everspin Technologies

MR256A08BCYS35R

Everspin Technologies

MR256A08BCYS35R by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, and has a max access time of 35ns. Ideal for industrial applications requiring fast asynchronous memory operations in a compact package.

35 ns

R-PDSO-G44

18.41 mm

262144 bit

MEMORY CIRCUIT

8

3

1

44

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

MR256A08BCYS35 by Everspin Technologies

MR256A08BCYS35

Everspin Technologies

MR256A08BCYS35 by Everspin Technologies is a 32Kx8 memory IC with CMOS technology. It operates asynchronously at a nominal voltage of 3.3V, with a max access time of 35ns. This industrial-grade IC is ideal for applications requiring fast and reliable memory storage in compact spaces.

35 ns

R-PDSO-G44

18.41 mm

262144 bit

MEMORY CIRCUIT

8

1

44

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

NP5Q128AE3ESFC0E by Micron Technology

NP5Q128AE3ESFC0E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Supply Current: 50 mA;

R-PDSO-G16

10.3 mm

134217728 bit

MEMORY CIRCUIT

8

1

16

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3/3.3

Not Qualified

2.65 mm

.0002 Amp

SRAMs

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.5 mm

NP8P128AE3T1760E by Micron Technology

NP8P128AE3T1760E

Micron Technology

Micron Technology's NP8P128AE3T1760E is a 16MX8 memory circuit IC with 134217728-bit density. Operating at 3V, it features synchronous mode and industrial temperature grade. With a package style of grid array and thin profile, it is suitable for applications requiring high-speed data storage and retrieval in various electronic devices.

R-PBGA-B64

10 mm

134217728 bit

MEMORY CIRCUIT

8

1

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

8 mm

NP8P128AE3TSM60E by Micron Technology

NP8P128AE3TSM60E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Position: DUAL;

R-PDSO-G56

18.4 mm

134217728 bit

MEMORY CIRCUIT

8

1

56

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

14 mm

MR256A08BCSO35 by Everspin Technologies

MR256A08BCSO35

Everspin Technologies

MR256A08BCSO35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for industrial applications requiring small outline package and asynchronous operation.

35 ns

R-PDSO-G32

20.726 mm

262144 bit

MEMORY CIRCUIT

8

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3.3

Not Qualified

2.54 mm

.007 Amp

SRAMs

75 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.25 mm

DUAL

NOT SPECIFIED

7.505 mm

MR2A16AVMA35R by Everspin Technologies

MR2A16AVMA35R

Everspin Technologies

MR2A16AVMA35R by Everspin Technologies is a 256Kx16 memory IC with CMOS technology. It operates asynchronously at a nominal voltage of 3.3V, suitable for industrial applications. This low-profile, fine-pitch grid array package has 48 terminals and offers a memory density of 4,194,304 bits.

S-PBGA-B48

8 mm

4194304 bit

MEMORY CIRCUIT

16

1

48

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

1.35 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

MR20H40CDFR by Everspin Technologies

MR20H40CDFR

Everspin Technologies

MR20H40CDFR by Everspin Technologies is a 512KX8 MEMORY IC with 4194304 bit Memory Density. Operating at 3.3V, it has a Max Supply Current of 46.5mA and can withstand temperatures from -40 to 85 °C. Ideal for industrial applications requiring high-speed synchronous memory solutions in a compact form factor.

R-PDSO-N8

6 mm

4194304 bit

MEMORY CIRCUIT

8

3

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

3.3

Not Qualified

.9 mm

.00075 Amp

SRAMs

46.5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

5 mm

MB85RS256BPNF-G-JNE1 by Fujitsu

MB85RS256BPNF-G-JNE1

Fujitsu

Fujitsu's MB85RS256BPNF-G-JNE1 is a 262Kb memory IC with 32Kx8 organization, operating at 3.3V. It features synchronous operation, industrial temperature grade, and small outline package suitable for various applications requiring reliable non-volatile memory storage.

R-PDSO-G8

5.05 mm

262144 bit

MEMORY CIRCUIT

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3.3

Not Qualified

1.75 mm

.00005 Amp

SRAMs

6 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

XC17S05PD8I by Xilinx

XC17S05PD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Seated Height: 4.5974 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

53984 bit

MEMORY CIRCUIT

1

1

1

8

53984 words

53984

SYNCHRONOUS

85 Cel

-40 Cel

53984X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S10PD8I by Xilinx

XC17S10PD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDIP-T8;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

95008 bit

MEMORY CIRCUIT

1

1

1

8

95008 words

95008

SYNCHRONOUS

85 Cel

-40 Cel

95008X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S10XLPD8I by Xilinx

XC17S10XLPD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDIP-T8;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

95752 bit

MEMORY CIRCUIT

1

1

1

8

95752 words

95752

SYNCHRONOUS

85 Cel

-40 Cel

95752X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20PD8I by Xilinx

XC17S20PD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

178144 bit

MEMORY CIRCUIT

1

1

1

8

178144 words

178144

SYNCHRONOUS

85 Cel

-40 Cel

178144X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20XLPD8I by Xilinx

XC17S20XLPD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

179160 bit

MEMORY CIRCUIT

1

1

1

8

179160 words

179160

SYNCHRONOUS

85 Cel

-40 Cel

179160X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30PD8I by Xilinx

XC17S30PD8I

Xilinx

XC17S30PD8I by Xilinx is a 247968-bit MEMORY CIRCUIT with 3-STATE output characteristics. Operating at 10 MHz clock frequency, it has an industrial temperature grade and synchronous mode. Commonly used in applications requiring reliable memory storage and retrieval within the industrial sector.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

247968 bit

MEMORY CIRCUIT

1

1

1

8

247968 words

247968

SYNCHRONOUS

85 Cel

-40 Cel

247968X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30XLPD8I by Xilinx

XC17S30XLPD8I

Xilinx

XC17S30XLPD8I by Xilinx is a 249168-bit MEMORY CIRCUIT with 3.3V supply, operating at up to 10MHz clock frequency. It features an industrial temperature grade range from -40°C to 85°C and offers a synchronous operation mode. This IC is commonly used in applications requiring high-speed memory functions.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

249168 bit

MEMORY CIRCUIT

1

1

1

8

249168 words

249168

SYNCHRONOUS

85 Cel

-40 Cel

249168X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40PD8I by Xilinx

XC17S40PD8I

Xilinx

XC17S40PD8I by Xilinx is a 329312-bit MEMORY CIRCUIT IC with 3-STATE output, operating at up to 10 MHz clock frequency. It features a synchronous mode, common I/O type, and operates in industrial temperature range. Ideal for applications requiring high memory density and low standby current.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

329312 bit

MEMORY CIRCUIT

1

1

1

8

329312 words

329312

SYNCHRONOUS

85 Cel

-40 Cel

329312X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40XLPD8I by Xilinx

XC17S40XLPD8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; No. of Words Code: 330696;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

330696 bit

MEMORY CIRCUIT

1

1

1

8

330696 words

330696

SYNCHRONOUS

85 Cel

-40 Cel

330696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40SO20I by Xilinx

XC17S40SO20I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Package Equivalence Code: SOP20,.4;

10 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

329312 bit

MEMORY CIRCUIT

1

3

1

20

329312 words

329312

SYNCHRONOUS

85 Cel

-40 Cel

329312X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

225

5

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S40XLSO20I by Xilinx

XC17S40XLSO20I

Xilinx

The Xilinx XC17S40XLSO20I is a 3.3V memory circuit IC with 330696 bits, operating synchronously at up to 10MHz. It features a small outline package with 20 terminals and is ideal for industrial applications requiring common I/O type and 3-STATE output characteristics.

10 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

330696 bit

MEMORY CIRCUIT

1

3

1

20

330696 words

330696

SYNCHRONOUS

85 Cel

-40 Cel

330696X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S05VO8I by Xilinx

XC17S05VO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Standby Current: .00005 Amp;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

53984 bit

MEMORY CIRCUIT

1

3

1

8

53984 words

53984

SYNCHRONOUS

85 Cel

-40 Cel

53984X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S05XLVO8I by Xilinx

XC17S05XLVO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Organization: 54544X1;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

54544 bit

MEMORY CIRCUIT

1

3

1

8

54544 words

54544

SYNCHRONOUS

85 Cel

-40 Cel

54544X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S10VO8I by Xilinx

XC17S10VO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

95008 bit

MEMORY CIRCUIT

1

3

1

8

95008 words

95008

SYNCHRONOUS

85 Cel

-40 Cel

95008X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S10XLVO8I by Xilinx

XC17S10XLVO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

95752 bit

MEMORY CIRCUIT

1

3

1

8

95752 words

95752

SYNCHRONOUS

85 Cel

-40 Cel

95752X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S20VO8I by Xilinx

XC17S20VO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Memory Density: 178144 bit;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

178144 bit

MEMORY CIRCUIT

1

3

1

8

178144 words

178144

SYNCHRONOUS

85 Cel

-40 Cel

178144X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S20XLVO8I by Xilinx

XC17S20XLVO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 10 MHz;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

179160 bit

MEMORY CIRCUIT

1

3

1

8

179160 words

179160

SYNCHRONOUS

85 Cel

-40 Cel

179160X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S30VO8I by Xilinx

XC17S30VO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

247968 bit

MEMORY CIRCUIT

1

3

1

8

247968 words

247968

SYNCHRONOUS

85 Cel

-40 Cel

247968X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S30XLVO8I by Xilinx

XC17S30XLVO8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Organization: 249168X1;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

249168 bit

MEMORY CIRCUIT

1

3

1

8

249168 words

249168

SYNCHRONOUS

85 Cel

-40 Cel

249168X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

DS2434-E by Maxim Integrated

DS2434-E

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 3; Package Shape: ROUND; No. of Words Code: 256; Organization: 256X1;

O-XBCY-W3

256 bit

MEMORY CIRCUIT

1

1

3

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X1

UNSPECIFIED

SIP3,.075,50

ROUND

CYLINDRICAL

3.6/6.4

Not Qualified

.000003 Amp

Other Memory ICs

1.5 mA

6.4 V

3.6 V

NO

CMOS

INDUSTRIAL

WIRE

1.27 mm

BOTTOM

CY8C20140-LDX2I by Cypress Semiconductor

CY8C20140-LDX2I

Cypress Semiconductor

CY8C20140-LDX2I by Cypress Semiconductor is a 2KX1 MEMORY CIRCUIT IC with SYNCHRONOUS operation, suitable for INDUSTRIAL applications. It operates at 3V, has 16 terminals in a SQUARE package style, and can withstand temperatures from -40 to 85 °C.

SRAM IS ORGANISED AS 512MB

S-XQCC-N16

e4

3 mm

2048 bit

MEMORY CIRCUIT

1

3

1

16

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX1

UNSPECIFIED

VQCCN

SQUARE

CHIP CARRIER, VERY THIN PROFILE

260

Not Qualified

.6 mm

5.25 V

2.4 V

3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

QUAD

20

3 mm

MR2A16ACMA35 by Everspin Technologies

MR2A16ACMA35

Everspin Technologies

MR2A16ACMA35 by Everspin: 256KX16 memory IC with 35ns access time, operates at 3.3V. Suitable for industrial applications, features low profile grid array package and CMOS technology.

35 ns

S-PBGA-B48

8 mm

4194304 bit

MEMORY CIRCUIT

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

260

3.3

Not Qualified

1.35 mm

.028 Amp

SRAMs

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

40

8 mm

SRTAG2K-DMC6T/2 by STMicroelectronics

SRTAG2K-DMC6T/2

STMicroelectronics

SRTAG2K-DMC6T/2 by STMicroelectronics is a CMOS memory IC designed for industrial applications, featuring an asynchronous operating mode and a compact 8-terminal dual configuration. It operates b/w -40 °C to 85 °C with a density of 2048 bits (256x8). Its small outline package ensures efficient space utilization in electronic designs.

R-PDSO-N8

3 mm

2048 bit

MEMORY CIRCUIT

8

1

8

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

.6 mm

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

2 mm

MR0A08BCYS35R by Everspin Technologies

MR0A08BCYS35R

Everspin Technologies

MR0A08BCYS35R by Everspin Tech: 128KX8 memory IC with 1048576 bit density, operates at 3.3V, and has a max access time of 35 ns. Ideal for industrial applications requiring fast asynchronous memory operations in a compact small outline package.

35 ns

R-PDSO-G44

18.41 mm

1048576 bit

MEMORY CIRCUIT

8

3

1

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

70 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

DSM2180F3-90T6 by STMicroelectronics

DSM2180F3-90T6

STMicroelectronics

DSM2180F3-90T6 from STMicroelectronics is a 128Kx8 asynchronous memory IC with a supply voltage range of 4.5V to 5.5V. It features a compact flatpack design and operates in industrial temperatures from -40 °C to 85°C. Ideal for various electronic applications, it ensures reliable performance in demanding environments.

S-PQFP-G52

e4

10 mm

1048576 bit

MEMORY CIRCUIT

8

1

52

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QFP

SQUARE

FLATPACK

Not Qualified

2.35 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

10 mm

DSM2180F3V-15K6 by STMicroelectronics

DSM2180F3V-15K6

STMicroelectronics

DSM2180F3V-15K6 by STMicroelectronics is a 128Kx8 asynchronous memory IC designed for industrial applications. It operates at a nominal voltage of 3.3V, with a temperature range of -40 °C to 85°C. This surface-mount chip carrier features a compact square design and offers high-density storage in a robust package.

S-PQCC-J52

e3

19.1262 mm

1048576 bit

MEMORY CIRCUIT

8

1

52

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

SQUARE

CHIP CARRIER

Not Qualified

4.57 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

19.1262 mm

DSM2180F3V-15T6 by STMicroelectronics

DSM2180F3V-15T6

STMicroelectronics

DSM2180F3V-15T6 from STMicroelectronics is a 128Kx8 CMOS memory IC designed for industrial applications. It operates asynchronously with a supply voltage range of 3-3.6V and features a compact flatpack design. With a max temp of 85 °C, it ensures reliability in demanding environments.

S-PQFP-G52

e4

10 mm

1048576 bit

MEMORY CIRCUIT

8

1

52

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QFP

SQUARE

FLATPACK

Not Qualified

2.35 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

10 mm

DSM2190F4V-15K6 by STMicroelectronics

DSM2190F4V-15K6

STMicroelectronics

DSM2190F4V-15K6 by STMicroelectronics is a 256Kx8 asynchronous memory IC designed for industrial applications. It operates at a nominal voltage of 3.3V, with a temperature range from -40 °C to 85°C. This surface-mount chip carrier features a compact square design and offers high-density storage in various electronic devices.

ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY

S-PQCC-J52

e3

19.1262 mm

2097152 bit

MEMORY CIRCUIT

8

1

52

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

SQUARE

CHIP CARRIER

Not Qualified

4.57 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

19.1262 mm

DSM2190F4V-15T6 by STMicroelectronics

DSM2190F4V-15T6

STMicroelectronics

DSM2190F4V-15T6 by STMicroelectronics is a 256Kx8 asynchronous memory IC with a supply voltage range of 3.0-3.6V. It features a compact flatpack design, operates in industrial temperatures (-40 °C to 85°C), and supports surface mount applications. Ideal for various electronic devices requiring reliable memory solutions.

ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY

S-PQFP-G52

e4

10 mm

2097152 bit

MEMORY CIRCUIT

8

1

52

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QFP

SQUARE

FLATPACK

Not Qualified

2.35 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

10 mm

DSM2150F5V-12T6 by STMicroelectronics

DSM2150F5V-12T6

STMicroelectronics

DSM2150F5V-12T6 by STMicroelectronics is a 256Kx16 asynchronous memory IC with a supply voltage range of 3.0-3.6V, ideal for industrial applications. It features a compact flatpack design and operates in temperatures from -40 °C to 85°C. This CMOS device supports surface mount technology with a fine pitch terminal layout.

ALSO CONTAINS 32K BYTE OF SECONDARY FLASH MEMORY

S-PQFP-G80

e3/e4

12 mm

4194304 bit

MEMORY CIRCUIT

16

1

80

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TFQFP

SQUARE

FLATPACK, THIN PROFILE, FINE PITCH

NOT SPECIFIED

Not Qualified

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

.5 mm

QUAD

NOT SPECIFIED

12 mm

XCCACEM16BG388I by Xilinx

XCCACEM16BG388I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 388; Package Code: BGA; Package Shape: SQUARE; Parallel or Serial: SERIAL;

20

1000000 Write/Erase Cycles

S-PBGA-B388

35 mm

16777216 bit

MEMORY CIRCUIT

16

1

1

388

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

BGA

BGA388,26X26,50

SQUARE

GRID ARRAY

SERIAL

1.8,3.3

Not Qualified

2.87 mm

Flash Memories

240 mA

1.89 V

1.71 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1.27 mm

BOTTOM

NOR TYPE

35 mm

XCCACEM32BG388I by Xilinx

XCCACEM32BG388I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 388; Package Code: BGA; Package Shape: SQUARE; Terminal Position: BOTTOM;

20

1000000 Write/Erase Cycles

S-PBGA-B388

e0

35 mm

33554432 bit

MEMORY CIRCUIT

16

1

1

388

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

BGA

BGA388,26X26,50

SQUARE

GRID ARRAY

SERIAL

1.8,3.3

Not Qualified

2.87 mm

Flash Memories

240 mA

1.89 V

1.71 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

NOR TYPE

35 mm

XCCACEM64BG388I by Xilinx

XCCACEM64BG388I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 388; Package Code: BGA; Package Shape: SQUARE; JESD-609 Code: e0;

133 MHz

1000000 Write/Erase Cycles

S-PBGA-B388

e0

35 mm

67108864 bit

MEMORY CIRCUIT

16

1

388

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

BGA

BGA388,26X26,50

SQUARE

GRID ARRAY

SERIAL

1.8,3.3

Not Qualified

2.87 mm

Flash Memories

240 mA

1.89 V

1.71 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

NOR TYPE

35 mm

M36DR432AD10ZA6T by STMicroelectronics

M36DR432AD10ZA6T

STMicroelectronics

M36DR432AD10ZA6T by STMicroelectronics is a low-profile, asynchronous memory IC featuring 2M words of mixed FLASH+SRAM with a supply voltage range of 1.65-2.2V. It operates in extreme temperatures from -40 °C to 85 °C and supports surface mount applications. Ideal for industrial use, it offers fast access times up to 100 ns and minimal standby current.

100 ns

SRAM IS ORGANIZED AS 256K X 16

R-PBGA-B66

e0

12 mm

33554432 bit

MEMORY CIRCUIT

16

FLASH+SRAM

1

66

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA66,8X12,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

1.8/2

Not Qualified

1.4 mm

.00001 Amp

Other Memory ICs

26 mA

2.2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

8 mm

AT88SC0104C-SU by Atmel

AT88SC0104C-SU

Atmel

AT88SC0104C-SU by Atmel is a 1Kx1 memory circuit IC with 1024-bit memory density. It operates at 3.3V, has I2C control byte 1011CCCC, and supports software write protection. This small outline package IC is ideal for industrial applications requiring secure data storage and retrieval.

10

100000 Write/Erase Cycles

1011CCCC

R-PDSO-G8

e3

4.925 mm

1024 bit

MEMORY CIRCUIT

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX1

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.0001 Amp

EEPROMs

5 mA

5.5 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

SOFTWARE

XC17S10XLVOG8I by Xilinx

XC17S10XLVOG8I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; JESD-609 Code: e3;

10 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

95752 bit

MEMORY CIRCUIT

1

3

1

8

95752 words

95752

SYNCHRONOUS

85 Cel

-40 Cel

95752X1

3-STATE

PLASTIC/EPOXY

TSOP2

DIP8,.3

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

DLPR100DWC by Texas Instruments

DLPR100DWC

Texas Instruments

DLPR100DWC by Texas Instruments is a memory circuit IC with 2MX8 organization, 8-bit memory width, and 16777216 bit memory density. It operates at temperatures ranging from -40 to 85 °C and has a max standby current of 0.00005 Amp. Ideal for industrial applications requiring small outline package style and surface mount compatibility.

R-PDSO-G8

16777216 bit

MEMORY CIRCUIT

8

3

8

2097152 words

2M

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

260

2.5/3.3

Not Qualified

.00005 Amp

OTP ROMs

YES

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30