Loading...

DIP EEPROM 130

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
93AA46C-I/P by Microchip Technology

93AA46C-I/P

Microchip Technology

93AA46C-I/P by Microchip Technology is an EEPROM with 64x16 organization, operating at 2.5V, and featuring a max clock frequency of 3 MHz. It is used in industrial applications for software write protection and offers a memory density of 1024 bit.

8

3 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.27 mm

1024 bit

EEPROM

16

1

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

TOTEM POLE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

Not Qualified

YES

NO

TS 16949

5.334 mm

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

6 ms

SOFTWARE

24AA64-E/P by Microchip Technology

24AA64-E/P

Microchip Technology

24AA64-E/P by Microchip Technology is an 8KX8 EEPROM with I2C control byte 1010DDDR. Operating at -40 to 125 °C, it offers 1000000 write/erase cycles and a max clock frequency of 0.4 MHz. Ideal for automotive applications due to AEC-Q100 screening level and hardwire write protection feature.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

4.5

AEC-Q100

5.334 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

4.5

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

7.62 mm

5 ms

HARDWARE

M24C64-WBN6P by STMicroelectronics

M24C64-WBN6P

STMicroelectronics

M24C64-WBN6P by STMicroelectronics is an 8Kx8 EEPROM with a memory density of 65536 bits. It operates at a max clock frequency of 0.4 MHz and has an endurance of 1,000,000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.27 mm

65536 bit

EEPROM

8

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

NOT SPECIFIED

3/5

Not Qualified

5.33 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

7.62 mm

5 ms

HARDWARE

25LC160A-I/P by Microchip Technology

25LC160A-I/P

Microchip Technology

25LC160A-I/P by Microchip Technology is a 2Kx8 EEPROM with SPI serial bus type, operating at 5V. It offers 1000000 write/erase cycles and has a max clock frequency of 10 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

10 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.271 mm

16384 bit

EEPROM

8

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

5

Not Qualified

TS 16949

5.334 mm

SPI

.000001 Amp

EEPROMs

6 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M93S56-WBN6P by STMicroelectronics

M93S56-WBN6P

STMicroelectronics

M93S56-WBN6P by STMicroelectronics is a 2048-bit EEPROM with a synchronous operating mode and supports both 3V and 5V power supplies. It features a max clock frequency of 2 MHz, ensuring fast data access, and offers hardware/software write protection for enhanced reliability. Ideal for industrial applications, it operates in temperatures from -40 °C to 85 °C.

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.27 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X16

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

M93C46-WBN6P by STMicroelectronics

M93C46-WBN6P

STMicroelectronics

M93C46-WBN6P by STMicroelectronics is a 1024-bit EEPROM with 64x16 organization, operating at up to 2MHz clock frequency. It features software write protection and MICROWIRE serial bus type, suitable for industrial applications requiring reliable non-volatile memory storage. With a max supply voltage of 5.5V and endurance of 1M cycles, it offers robust performance in a compact rectangular package style.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.27 mm

1024 bit

EEPROM

16

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

MICROWIRE

.00001 Amp

EEPROMs

1.5 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

SOFTWARE

M93C56-WBN6P by STMicroelectronics

M93C56-WBN6P

STMicroelectronics

M93C56-WBN6P from STMicroelectronics is a 2048-bit EEPROM with a synchronous operating mode and a max clock frequency of 2 MHz. It operates b/w 2.5V to 5.5V, ensuring reliability in industrial applications with -40 °C to 85°C temp range. With software write protection and endurance of 1M cycles, it's ideal for data storage solutions.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.27 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X16

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

SOFTWARE

M93C86-WBN6P by STMicroelectronics

M93C86-WBN6P

STMicroelectronics

M93C86-WBN6P by STMicroelectronics is an EEPROM with 1KX16 organization, 16384 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in SERIAL mode with a max clock frequency of 2 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.27 mm

16384 bit

EEPROM

16

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX16

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

MICROWIRE

.00001 Amp

EEPROMs

1.5 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

SOFTWARE

CAT28C256LI-15 by Catalyst Semiconductor

CAT28C256LI-15

Catalyst Semiconductor

CAT28C256LI-15 by Catalyst Semiconductor is a 32KX8 EEPROM with a memory density of 262144 bit. It operates in asynchronous mode, has a max access time of 150 ns, and can endure up to 100000 write/erase cycles. This memory IC is commonly used in industrial applications requiring reliable non-volatile storage.

150 ns

NO

YES

100000 Write/Erase Cycles

R-PDIP-T28

e3

36.695 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

5.08 mm

.00015 Amp

EEPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

5 ms

24AA025-I/P by Microchip Technology

24AA025-I/P

Microchip Technology

24AA025-I/P by Microchip Technology is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 2048-bit memory density. It operates in synchronous mode at a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable data storage with up to 1000000 write/erase cycles.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

2.5

Not Qualified

TS 16949

5.334 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C01-WBN6P by STMicroelectronics

M24C01-WBN6P

STMicroelectronics

M24C01-WBN6P by STMicroelectronics is an EEPROM with 1024-bit memory density, operating at a max clock frequency of 0.4 MHz. It features I2C serial bus type and offers 1000000 write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact rectangular package style.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.27 mm

1024 bit

EEPROM

8

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C02-WBN6P by STMicroelectronics

M24C02-WBN6P

STMicroelectronics

M24C02-WBN6P by STMicroelectronics is an EEPROM with 256x8 organization, operating at 5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact rectangular package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.27 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C04-WBN6P by STMicroelectronics

M24C04-WBN6P

STMicroelectronics

M24C04-WBN6P by STMicroelectronics is a 512x8 EEPROM with a max clock frequency of 0.4 MHz. It operates in synchronous mode and has a temperature range of -40 to 85°C. This memory IC is commonly used in industrial applications for data storage and retrieval.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e3

9.27 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

NOT SPECIFIED

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

7.62 mm

5 ms

HARDWARE

M24C08-WBN6P by STMicroelectronics

M24C08-WBN6P

STMicroelectronics

M24C08-WBN6P by STMicroelectronics is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 write/erase cycles endurance. It operates in synchronous mode at a max clock frequency of 0.4 MHz and has a serial I2C bus type. This industrial-grade memory IC is commonly used for hardware write protection applications.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDIP-T8

e3

9.27 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

NOT SPECIFIED

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

7.62 mm

5 ms

HARDWARE

M24C16-RBN6P by STMicroelectronics

M24C16-RBN6P

STMicroelectronics

M24C16-RBN6P from STMicroelectronics is a 2Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w 1.8V to 5.5V, supports up to 1M write/erase cycles, and functions in industrial temperatures (-40 °C to 85 °C). Ideal for data storage in various electronic applications.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e3

9.27 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C16-WBN6P by STMicroelectronics

M24C16-WBN6P

STMicroelectronics

STMicroelectronics M24C16-WBN6P is an 8-terminal EEPROM with 2Kx8 organization, operating at 5V. It features I2C control byte 1010MMMR and offers a memory density of 16384 bits. Ideal for industrial applications requiring reliable data storage with up to 1000000 write/erase cycles.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e3

9.27 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

CAT28C64BL-12 by Catalyst Semiconductor

CAT28C64BL-12

Catalyst Semiconductor

CAT28C64BL-12 by Catalyst Semiconductor is an 8KX8 EEPROM with a memory density of 65536 bit. It operates at 5V, has a programming voltage of 5V, and offers endurance up to 1M Write/Erase cycles. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

120 ns

NO

YES

1000000 Write/Erase Cycles

R-PDIP-T28

e3

36.695 mm

65536 bit

EEPROM

8

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

32

PARALLEL

5

5

Not Qualified

5.08 mm

.0001 Amp

EEPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

5 ms

24LC024H-I/P by Microchip Technology

24LC024H-I/P

Microchip Technology

24LC024H-I/P by Microchip Technology is an EEPROM with 256x8 organization, operating at 1 MHz clock frequency. It has a supply voltage range of 2.5V to 5.5V and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

4.5

Not Qualified

TS 16949

5.334 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

4.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

XC17128EPDG8C by Xilinx

XC17128EPDG8C

Xilinx

Xilinx XC17128EPDG8C is a 128Kx1 EEPROM with 15MHz clock frequency, operating at 5V. It features synchronous operation, 3-STATE output, and serial interface. Ideal for configuration memory applications in commercial-grade devices due to its compact size and low standby current of 0.00005A.

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

131072 bit

CONFIGURATION MEMORY

1

1

1

8

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17256EPDG8C by Xilinx

XC17256EPDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

262144 bit

CONFIGURATION MEMORY

1

1

1

8

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200APDG8C by Xilinx

XC17S200APDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 1335840X1;

COMMON

R-PDIP-T8

e3

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200APDG8I by Xilinx

XC17S200APDG8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

COMMON

R-PDIP-T8

e3

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

85 Cel

-40 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S50APDG8C by Xilinx

XC17S50APDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 250;

COMMON

R-PDIP-T8

e3

9.3599 mm

559200 bit

CONFIGURATION MEMORY

1

1

1

8

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1701LPDG8I by Xilinx

XC1701LPDG8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1736EPDG8C by Xilinx

XC1736EPDG8C

Xilinx

XC1736EPDG8C by Xilinx is a 36288-bit EEPROM with 10 MHz clock frequency, operating at 5V. It features synchronous operation, 3-STATE output, and serial interface. Ideal for configuration memory applications in commercial-grade devices due to its compact size and low standby current of 0.00005 Amp.

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

36288 bit

CONFIGURATION MEMORY

1

1

1

8

36288 words

36288

SYNCHRONOUS

70 Cel

0 Cel

36288X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1765EPDG8C by Xilinx

XC1765EPDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Memory Density: 65536 bit;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

65536 bit

CONFIGURATION MEMORY

1

1

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1701L-PDG8C by Xilinx

XC1701L-PDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Equivalence Code: DIP8,.3;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

24AA1025-I/P by Microchip Technology

24AA1025-I/P

Microchip Technology

24AA1025-I/P by Microchip Technology is an EEPROM with 128KX8 organization, operating at 2.5V, and featuring I2C control byte 1010MDDR. It is used in industrial applications for storing data with a memory density of 1048576 bit and endurance of 1000000 write/erase cycles.

.4 MHz

200

1000000 Write/Erase Cycles

1010MDDR

R-PDIP-T8

e3

9.271 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

2.5

Not Qualified

AEC-Q100

5.334 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

1.7 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

24FC1025-I/P by Microchip Technology

24FC1025-I/P

Microchip Technology

24FC1025-I/P by Microchip Technology is an EEPROM with 128KX8 organization, operating at 2.5V, and featuring a max clock frequency of 1 MHz. It is commonly used in industrial applications requiring reliable non-volatile memory storage with a high endurance of 1000000 write/erase cycles.

1 MHz

200

1000000 Write/Erase Cycles

1010MDDR

R-PDIP-T8

e3

9.271 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

2.5

Not Qualified

AEC-Q100

5.334 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

W27C512-45Z by Winbond Electronics

W27C512-45Z

Winbond Electronics

Winbond Electronics' W27C512-45Z is a 64KX8 EEPROM with 524288 bit memory density. Operating at 5V, it offers a max access time of 45ns and uses parallel interface. Ideal for commercial applications requiring fast data retrieval in a compact IN-LINE package style.

45 ns

R-PDIP-T28

37.08 mm

524288 bit

EEPROM

8

1

28

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

NOT SPECIFIED

12

Not Qualified

5.33 mm

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

AT28C256-15DM/883-815 by Microchip Technology

AT28C256-15DM/883-815

Microchip Technology

AT28C256-15DM/883-815 by Microchip Technology is a MILITARY-grade EEPROM with 32KX8 organization, 150 ns access time, and 10 ms write cycle time. It operates at 5V with -55 to 125 °C temperature range. Ideal for applications requiring reliable non-volatile memory in harsh environments.

150 ns

R-GDIP-T28

e0

37.215 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

125 Cel

-55 Cel

32KX8

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

PARALLEL

5

MIL-STD-883 Class C

5.72 mm

5.5 V

4.5 V

5

NO

CMOS

MILITARY

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

10 ms

AT28C256F-15DM/883-815 by Microchip Technology

AT28C256F-15DM/883-815

Microchip Technology

EEPROM; Temperature Grade: MILITARY; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 32KX8;

150 ns

AUTOMATIC WRITE

NO

YES

10

10000 Write/Erase Cycles

R-GDIP-T28

37.215 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

125 Cel

-55 Cel

32KX8

CERAMIC, GLASS-SEALED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

MIL-STD-883 Class B

5.72 mm

.0003 Amp

50 mA

5.5 V

4.5 V

5

NO

CMOS

MILITARY

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

3 ms

24CS512-I/P by Microchip Technology

24CS512-I/P

Microchip Technology

24CS512-I/P by Microchip Technology is an EEPROM with 64KX8 organization, operating in synchronous mode at a max clock frequency of 3.4 MHz. It features I2C control byte 1010DDDR and offers write protection through hardware/software. Ideal for industrial applications requiring reliable memory storage with endurance of 1000000 Write/Erase cycles.

3.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

AEC-Q100

5.334 mm

I2C

.000003 Amp

3 mA

5.5 V

2.5 V

NO

CMOS

INDUSTRIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

24CS512-E/P by Microchip Technology

24CS512-E/P

Microchip Technology

24CS512-E/P by Microchip Technology is a 64KX8 EEPROM with I2C control byte 1010DDDR. Operating in synchronous mode, it offers 1000000 Write/Erase cycles and has a memory density of 524288 bit. Ideal for applications requiring reliable data storage with hardware write protection and low standby current consumption.

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

9.271 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5.334 mm

I2C

.000003 Amp

3 mA

5.5 V

1.7 V

NO

CMOS

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE