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DIP EEPROM 130

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
M93C56-WBN6 by STMicroelectronics

M93C56-WBN6

STMicroelectronics

M93C56-WBN6 by STMicroelectronics is a 2048-bit EEPROM with 128x16 organization, operating at 2 MHz. It features a synchronous mode, software write protection, and MICROWIRE serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact 8-terminal package.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X16

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

MICROWIRE

.00001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

SOFTWARE

M93C46-BN6 by STMicroelectronics

M93C46-BN6

STMicroelectronics

M93C46-BN6 by STMicroelectronics is a 1024-bit EEPROM with 64x16 organization, operating at 5V. It features a MICROWIRE serial bus, 2MHz clock frequency, and software write protection. Ideal for industrial applications requiring reliable non-volatile memory in a compact IN-LINE package.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

1024 bit

EEPROM

16

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

5.33 mm

MICROWIRE

.00005 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

SOFTWARE

M24C01-WBN6 by STMicroelectronics

M24C01-WBN6

STMicroelectronics

M24C01-WBN6 by STMicroelectronics is an EEPROM with 128x8 organization, operating at 5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e0

9.27 mm

1024 bit

EEPROM

8

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C02-WBN6 by STMicroelectronics

M24C02-WBN6

STMicroelectronics

STMicroelectronics M24C02-WBN6 is an EEPROM with 256x8 organization, I2C serial bus type, and 2048-bit memory density. It operates at a max clock frequency of 0.4 MHz and has a write protection feature for hardware security. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e0

9.27 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C04-WBN6 by STMicroelectronics

M24C04-WBN6

STMicroelectronics

The STMicroelectronics M24C04-WBN6 is an EEPROM with 512x8 organization, operating at 5V. It features a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e0

9.27 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M93S56-WBN6 by STMicroelectronics

M93S56-WBN6

STMicroelectronics

STMicroelectronics M93S56-WBN6 is a 2048-bit EEPROM with 128x16 organization, operating at 2MHz clock frequency. It features hardware/software write protection and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X16

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

M93S66-WBN6 by STMicroelectronics

M93S66-WBN6

STMicroelectronics

M93S66-WBN6 by STMicroelectronics is a 256x16 EEPROM with 2MHz clock frequency, 1000000 write/erase cycles, and MICROWIRE serial bus. It operates at -40 to 85 °C, has 8 terminals in an IN-LINE package style, and offers hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage.

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

4096 bit

EEPROM

16

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

M24C04-BN6 by STMicroelectronics

M24C04-BN6

STMicroelectronics

The STMicroelectronics M24C04-BN6 is an EEPROM with 512x8 organization, operating at 5V. It features a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e0

9.27 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M95256-WBN6 by STMicroelectronics

M95256-WBN6

STMicroelectronics

M95256-WBN6 by STMicroelectronics is a 32Kx8 EEPROM with SPI serial bus, 262144-bit memory density, and 100000 write/erase cycles. It operates at a max clock frequency of 5 MHz and has a temperature range of -40 to 85°C. Ideal for industrial applications requiring reliable non-volatile memory storage.

100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

5 MHz

40

100000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

XC1701LPD8C by Xilinx

XC1701LPD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1701PD8C by Xilinx

XC1701PD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

20 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1701PD8I by Xilinx

XC1701PD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Technology: CMOS;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

20 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17512LPD8C by Xilinx

XC17512LPD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

524288 bit

CONFIGURATION MEMORY

1

1

1

8

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17512LPD8I by Xilinx

XC17512LPD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

524288 bit

CONFIGURATION MEMORY

1

1

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

FM93CS56LN by Fairchild Semiconductor

FM93CS56LN

Fairchild Semiconductor

FM93CS56LN by Fairchild Semiconductor is a 2048-bit EEPROM with 128x16 organization. It operates at 0.25 MHz clock frequency and has a max write cycle time of 15 ms. Suitable for applications requiring low power consumption and reliable non-volatile memory storage.

.25 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.817 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

70 Cel

0 Cel

128X16

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.08 mm

MICROWIRE

.00001 Amp

EEPROMs

1 mA

5.5 V

2.7 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

15 ms

HARDWARE/SOFTWARE

XC17S100APD8C by Xilinx

XC17S100APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Finish: Tin/Lead (Sn85Pb15);

COMMON

R-PDIP-T8

e0

9.3599 mm

781216 bit

CONFIGURATION MEMORY

1

1

1

8

781216 words

781216

SYNCHRONOUS

70 Cel

0 Cel

781216X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S100APD8I by Xilinx

XC17S100APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Supply Current: 15 mA;

COMMON

R-PDIP-T8

e0

9.3599 mm

781216 bit

CONFIGURATION MEMORY

1

1

1

8

781216 words

781216

SYNCHRONOUS

85 Cel

-40 Cel

781216X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S150APD8C by Xilinx

XC17S150APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

COMMON

R-PDIP-T8

e0

9.3599 mm

1040096 bit

CONFIGURATION MEMORY

1

1

1

8

1040096 words

1040096

SYNCHRONOUS

70 Cel

0 Cel

1040096X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S150APD8I by Xilinx

XC17S150APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

COMMON

R-PDIP-T8

e0

9.3599 mm

1040096 bit

CONFIGURATION MEMORY

1

1

1

8

1040096 words

1040096

SYNCHRONOUS

85 Cel

-40 Cel

1040096X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S15APD8C by Xilinx

XC17S15APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Equivalence Code: DIP8,.3;

COMMON

R-PDIP-T8

e0

9.3599 mm

197696 bit

CONFIGURATION MEMORY

1

1

1

8

197696 words

197696

SYNCHRONOUS

70 Cel

0 Cel

197696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S15APD8I by Xilinx

XC17S15APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

COMMON

R-PDIP-T8

e0

9.3599 mm

197696 bit

CONFIGURATION MEMORY

1

1

1

8

197696 words

197696

SYNCHRONOUS

85 Cel

-40 Cel

197696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200APD8C by Xilinx

XC17S200APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Width: 7.62 mm;

COMMON

R-PDIP-T8

e0

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200APD8I by Xilinx

XC17S200APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Style (Meter): IN-LINE;

COMMON

R-PDIP-T8

e0

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

85 Cel

-40 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30APD8C by Xilinx

XC17S30APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE;

COMMON

R-PDIP-T8

e0

9.3599 mm

336768 bit

CONFIGURATION MEMORY

1

1

1

8

336768 words

336768

SYNCHRONOUS

70 Cel

0 Cel

336768X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30APD8I by Xilinx

XC17S30APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Style (Meter): IN-LINE;

COMMON

R-PDIP-T8

e0

9.3599 mm

336768 bit

CONFIGURATION MEMORY

1

1

1

8

336768 words

336768

SYNCHRONOUS

85 Cel

-40 Cel

336768X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S50APD8C by Xilinx

XC17S50APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

COMMON

R-PDIP-T8

e0

9.3599 mm

559200 bit

CONFIGURATION MEMORY

1

1

1

8

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S50APD8I by Xilinx

XC17S50APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

COMMON

R-PDIP-T8

e0

9.3599 mm

559200 bit

CONFIGURATION MEMORY

1

1

1

8

559200 words

559200

SYNCHRONOUS

85 Cel

-40 Cel

559200X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

M24C32-WBN6P by STMicroelectronics

M24C32-WBN6P

STMicroelectronics

STMicroelectronics M24C32-WBN6P is an EEPROM with 4Kx8 organization, operating at 2.7V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and is suitable for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.27 mm

32768 bit

EEPROM

8

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

AEC-Q100

5.33 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

2.5 V

2.7

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

24LC128-I/PG by Microchip Technology

24LC128-I/PG

Microchip Technology

24LC128-I/PG by Microchip Technology is a CMOS EEPROM with a memory density of 131072 bits. It operates in synchronous mode and has a max clock frequency of 0.4 MHz. This EEPROM is commonly used for industrial applications requiring reliable data storage and retrieval.

1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.334 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

24LC512-I/PG by Microchip Technology

24LC512-I/PG

Microchip Technology

24LC512-I/PG by Microchip Technology is an EEPROM with 64KX8 organization, operating at 0.4 MHz clock frequency. It has a memory density of 524288 bit and can endure up to 1000000 Write/Erase cycles. Ideal for industrial applications requiring reliable data storage with I2C serial bus communication.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.334 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

25LC128-I/P by Microchip Technology

25LC128-I/P

Microchip Technology

25LC128-I/P by Microchip Technology is a 16KX8 EEPROM with SPI interface. It operates at 5V, has 1000000 Write/Erase Cycles endurance, and supports hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

10 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.271 mm

131072 bit

EEPROM

8

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

5

Not Qualified

AEC-Q100

5.334 mm

SPI

.000001 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

25AA640A-I/P by Microchip Technology

25AA640A-I/P

Microchip Technology

25AA640A-I/P by Microchip Technology is an 8KX8 EEPROM with SPI serial bus type, operating at 10 MHz. It has a memory density of 65536 bit and can endure up to 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.271 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

2.5

Not Qualified

AEC-Q100

5.334 mm

SPI

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

25LC640A-E/P by Microchip Technology

25LC640A-E/P

Microchip Technology

25LC640A-E/P by Microchip Technology is an 8KX8 EEPROM with SPI interface, operating at 10 MHz clock frequency. It has a memory density of 65536 bit and can endure 1000000 write/erase cycles. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125 °C temperature range.

10 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.271 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

5

Not Qualified

AEC-Q100

5.334 mm

SPI

.000005 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

24AA1026-I/P by Microchip Technology

24AA1026-I/P

Microchip Technology

24AA1026-I/P by Microchip Technology is an EEPROM with 128KX8 organization, operating at 2.5V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and can endure 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e3

9.271 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8/5

2.5

Not Qualified

TS 16949

5.334 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

1.7 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

24FC1026-I/P by Microchip Technology

24FC1026-I/P

Microchip Technology

24FC1026-I/P by Microchip Technology is an 8-terminal EEPROM with 128KX8 organization, operating at 2.5V and up to 1MHz clock frequency. It features I2C control byte for hardware write protection and offers industrial temperature grade suitability. Ideal for applications requiring reliable non-volatile memory storage in various electronic devices.

1 MHz

200

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e3

9.271 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

2.5

Not Qualified

TS 16949

5.334 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

PCA8581P/F6,112 by NXP Semiconductors

PCA8581P/F6,112

NXP Semiconductors

EEPROM; Temperature Grade: OTHER; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

10 YEAR OF DATA RETENTION

10

10000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e4

9.5 mm

1024 bit

EEPROM

8

1

8

128 words

128

SYNCHRONOUS

85 Cel

-25 Cel

128X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

5

Not Qualified

4.2 mm

I2C

.00001 Amp

EEPROMs

1 mA

5.5 V

4.5 V

5

NO

CMOS

OTHER

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

PCF85102C-2P/03,11 by NXP Semiconductors

PCF85102C-2P/03,11

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Finish: NICKEL PALLADIUM GOLD;

.1 MHz

10

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e4

9.5 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

I2C

.0000035 Amp

EEPROMs

2 mA

6 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

PCF85103C-2P/00,11 by NXP Semiconductors

PCF85103C-2P/00,11

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.5 V;

.1 MHz

10

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e4

9.5 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

I2C

.0000035 Amp

EEPROMs

2 mA

6 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

PCF85116-3P/01,112 by NXP Semiconductors

PCF85116-3P/01,112

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 2KX8;

.4 MHz

20

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e4

9.5 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

I2C

EEPROMs

5.5 V

2.7 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

HARDWARE

PCF8582C-2P/03,112 by NXP Semiconductors

PCF8582C-2P/03,112

NXP Semiconductors

NXP Semiconductors' PCF8582C-2P/03,112 is an 8-terminal EEPROM with a 256x8 organization and operates synchronously at up to 0.1 MHz. It uses I2C serial bus for control and has a memory density of 2048 bits. Ideal for industrial applications requiring reliable non-volatile memory storage.

.1 MHz

10

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e4

9.5 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

I2C

.0000035 Amp

EEPROMs

2 mA

6 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

PCF8594C-2P/02,112 by NXP Semiconductors

PCF8594C-2P/02,112

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; No. of Functions: 1;

.1 MHz

10

1000000 Write/Erase Cycles

R-PDIP-T8

e4

9.5 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

I2C

.0000035 Amp

EEPROMs

.8 mA

6 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

HARDWARE

PCF8598C-2P/02,112 by NXP Semiconductors

PCF8598C-2P/02,112

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; I2C Control Byte: 1010DMMR;

DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE

.1 MHz

10

1000000 Write/Erase Cycles

1010DMMR

R-PDIP-T8

e4

9.5 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

I2C

.00001 Amp

EEPROMs

2 mA

6 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

HARDWARE

CAT28C256L15 by Onsemi

CAT28C256L15

Onsemi

CAT28C256L15 by Onsemi is a 32KX8 EEPROM with 262144 bit memory density. It operates at 5V, has 100000 Write/Erase Cycles endurance, and offers 150 ns access time. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

150 ns

NO

YES

100

100000 Write/Erase Cycles

R-PDIP-T28

e3

36.695 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

5.08 mm

.00015 Amp

EEPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

5 ms

11AA010-I/P by Microchip Technology

11AA010-I/P

Microchip Technology

11AA010-I/P by Microchip Technology is an EEPROM with 128x8 organization, operating at 1 MHz clock frequency. It has a max write cycle time of 10 ms and can endure up to 1,000,000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

1 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.271 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

TOTEM POLE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

Not Qualified

NO

NO

TS 16949

5.334 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

NO

7.62 mm

10 ms

SOFTWARE

11LC010-I/P by Microchip Technology

11LC010-I/P

Microchip Technology

11LC010-I/P by Microchip Technology is an EEPROM with 128x8 organization, operating at 1 MHz clock frequency. It has a memory density of 1024 bit and can endure up to 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

1 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.271 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

TOTEM POLE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

NO

NO

TS 16949

5.334 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

NO

7.62 mm

10 ms

SOFTWARE

AT17LV010A-10PI by Atmel

AT17LV010A-10PI

Atmel

AT17LV010A-10PI by Atmel is a 1MX1 EEPROM with 1048576 bit memory density. It operates at 10 MHz clock frequency and has a max supply voltage of 3.6 V. Ideal for industrial applications requiring configuration memory in synchronous mode with hardware write protection.

ALSO OPERATES AT 5V SUPPLY

10 MHz

R-PDIP-T8

e0

9.271 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3.3/5

Not Qualified

5.334 mm

EEPROMs

10 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

HARDWARE

AT17LV010-10PI by Atmel

AT17LV010-10PI

Atmel

AT17LV010-10PI by Atmel is a 1MX1 EEPROM with 1048576 bit memory density. It operates at 3.3V, has a clock frequency of 10 MHz, and offers 100000 Write/Erase cycles. Ideal for industrial applications requiring configuration memory with hardware write protection and synchronous operation.

IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO

10 MHz

90

100000 Write/Erase Cycles

R-PDIP-T8

e0

9.271 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3.3/5

Not Qualified

5.334 mm

.0001 Amp

EEPROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

HARDWARE

BR24L02-W by ROHM

BR24L02-W

ROHM

ROHM's BR24L02-W is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 2048-bit memory density. It operates at a voltage range of 1.8V to 5.5V and has a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable data storage with up to 1000000 write/erase cycles.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e2

9.3 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

260

2/5

Not Qualified

3.7 mm

I2C

.000002 Amp

EEPROMs

2 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

Tin/Copper (Sn/Cu)

THROUGH-HOLE

2.54 mm

DUAL

10

7.62 mm

5 ms

HARDWARE