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DIP EEPROM 130

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
CAT24M01LI-G by Onsemi

CAT24M01LI-G

Onsemi

CAT24M01LI-G by Onsemi is an 8-terminal EEPROM with 128KX8 organization, operating at 3.3V. It features a max clock frequency of 0.4 MHz and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e4

9.27 mm

1048576 bit

EEPROM

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

SPI

.000002 Amp

EEPROMs

3 mA

5.5 V

1.8 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

24LC1026-E/P by Microchip Technology

24LC1026-E/P

Microchip Technology

24LC1026-E/P by Microchip Technology is an EEPROM with 128KX8 organization, operating in synchronous mode at 4.5V. It features I2C control byte 1010DDMR and offers 1000000 write/erase cycles. Ideal for automotive applications due to its TS16949 screening level and -40 to 125 °C temperature range.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e3

9.271 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

4.5

Not Qualified

TS 16949

5.334 mm

I2C

.000005 Amp

5 mA

5.5 V

2.5 V

4.5

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

CAT24C512LI-G by Onsemi

CAT24C512LI-G

Onsemi

CAT24C512LI-G by Onsemi is an EEPROM with 64KX8 organization, 524288 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in synchronous mode at a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage with I2C serial bus interface.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e4

9.27 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

Not Qualified

NO

5.33 mm

I2C

.000002 Amp

EEPROMs

2.5 mA

5.5 V

1.8 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

CAT24C02LI-GA by Onsemi

CAT24C02LI-GA

Onsemi

CAT24C02LI-GA by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It features I2C control byte 1010DDDR and offers write protection. With a memory density of 2048 bit, it is ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e4

9.27 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

BR24T256-W by ROHM

BR24T256-W

ROHM

ROHM's BR24T256-W EEPROM features 32Kx8 organization, operates at 1.8/5V, and has a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable data storage with 1000000 write/erase cycles endurance.

SEATED HT-CALCULATED

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.3 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8/5

Not Qualified

4.21 mm

I2C

.000002 Amp

EEPROMs

2.5 mA

5.5 V

1.6 V

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

CAT25010LI-GD by Onsemi

CAT25010LI-GD

Onsemi

CAT25010LI-GD by Onsemi is an EEPROM with 128x8 organization, operating at 5V. It features SPI serial bus type, 10MHz clock frequency, and 1000000 write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

10 MHz

100

1000000 Write/Erase Cycles

R-PDIP-T8

e4

9.27 mm

1024 bit

EEPROM

8

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

260

2/5

Not Qualified

5.33 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

CAT25020LI-GD by Onsemi

CAT25020LI-GD

Onsemi

CAT25020LI-GD by Onsemi is an EEPROM with 256x8 organization, SPI serial bus type, and 2048-bit memory density. It operates at a max clock frequency of 10 MHz and has a write protection feature for hardware/software security. Ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

100

1000000 Write/Erase Cycles

R-PDIP-T8

e4

9.27 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

260

2/5

Not Qualified

5.33 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

CAT25040LI-GD by Onsemi

CAT25040LI-GD

Onsemi

CAT25040LI-GD by Onsemi is an EEPROM with 512x8 organization, SPI serial bus type, and 10 MHz clock frequency. It operates at -40 to 85 °C, has a 5V nominal voltage, and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

100

1000000 Write/Erase Cycles

R-PDIP-T8

e4

9.27 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

260

2/5

Not Qualified

5.33 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

BR24G1M-3A by ROHM

BR24G1M-3A

ROHM

ROHM's BR24G1M-3A is an 8-terminal EEPROM with 128Kx8 organization, operating at 1MHz clock frequency. Ideal for industrial applications, it offers a memory density of 1048576 bits and endurance of 1000000 write/erase cycles.

ROHM-S-A0000225889 REF SEATED HTCONSIDER

1 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

9.3 mm

1048576 bit

EEPROM

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

NOT SPECIFIED

1.8/5

Not Qualified

3.7 mm

I2C

.000003 Amp

EEPROMs

4.5 mA

5.5 V

1.7 V

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

7.62 mm

5 ms

HARDWARE

24AA256UID-I/P by Microchip Technology

24AA256UID-I/P

Microchip Technology

24AA256UID-I/P by Microchip Technology is an EEPROM with 32KX8 organization, operating at 4.5V and -40 to 85 °C temperature range. It features I2C control byte 1010DDDR, serial interface, and endurance of 1M cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

ALSO OPERATES AT 1.7V TO 2.5V @ 0.1MHZ

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8/5

4.5

Not Qualified

TS 16949

5.334 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

1.27 mm

DUAL

7.62 mm

5 ms

25AA1024-I/P by Microchip Technology

25AA1024-I/P

Microchip Technology

25AA1024-I/P by Microchip Technology is a 1MX1 EEPROM with 20 MHz clock frequency, SPI serial bus type. It operates at -40 to 85 °C, has 1000000 write/erase cycles endurance, and uses hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage.

OPERTAES WITH 2.5VMIN @ 10MHZ

20 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.271 mm

8388608 bit

EEPROM

8

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

AEC-Q100

5.334 mm

SPI

.000012 Amp

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

6 ms

HARDWARE/SOFTWARE

24LC65/P by Microchip Technology

24LC65/P

Microchip Technology

24LC65/P by Microchip Technology is an 8KX8 EEPROM with 1000000 Write/Erase Cycles. It operates at 0.1 MHz, has a memory density of 65536 bit, and uses I2C serial bus type. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature grade environments.

.1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.46 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

70 Cel

0 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

5

Not Qualified

TS 16949

4.32 mm

I2C

.000005 Amp

EEPROMs

3 mA

6 V

2.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

AT28LV256-25PC by Atmel

AT28LV256-25PC

Atmel

EEPROM; Temperature Grade: COMMERCIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Memory Width: 8;

250 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

36.95 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

3.3

3

Not Qualified

5.59 mm

.00002 Amp

EEPROMs

15 mA

3.465 V

3.135 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT28LV256-25PI by Atmel

AT28LV256-25PI

Atmel

AT28LV256-25PI by Atmel is a 32Kx8 EEPROM with a supply voltage of 3.3V, operating temperature range of -40 to 85°C, and endurance of 10,000 write/erase cycles. It is commonly used in industrial applications for storing data reliably.

250 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

36.95 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

3.3

3

Not Qualified

5.59 mm

.00005 Amp

EEPROMs

15 mA

3.465 V

3.135 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

24AA65/P by Microchip Technology

24AA65/P

Microchip Technology

24AA65/P by Microchip Technology is an 8KX8 EEPROM with 1000000 Write/Erase Cycles. It operates at 0.1 MHz with a supply voltage range of 1.8-6V, suitable for I2C serial bus applications in commercial temperature grade environments.

.1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.46 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

70 Cel

0 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

5

Not Qualified

TS 16949

4.32 mm

I2C

.000005 Amp

EEPROMs

3 mA

6 V

1.8 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

24C65/P by Microchip Technology

24C65/P

Microchip Technology

24C65/P by Microchip Technology is an EEPROM with a memory density of 65536 bit. It operates in synchronous mode and has a max clock frequency of 0.4 MHz. It is commonly used in applications that require non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.46 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

70 Cel

0 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

5

Not Qualified

TS 16949

4.32 mm

I2C

.000005 Amp

EEPROMs

3 mA

6 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

M24C16-WBN6 by STMicroelectronics

M24C16-WBN6

STMicroelectronics

STMicroelectronics M24C16-WBN6 is an 8-terminal EEPROM with 2Kx8 organization, operating at 5V. It features I2C control byte for synchronous operation and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact rectangular package.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e0

9.27 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C16-BN6 by STMicroelectronics

M24C16-BN6

STMicroelectronics

STMicroelectronics M24C16-BN6 is an 8-terminal EEPROM with 2Kx8 organization, operating at 5V. It features a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact rectangular package.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e0

9.27 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C08-WBN6 by STMicroelectronics

M24C08-WBN6

STMicroelectronics

M24C08-WBN6 by STMicroelectronics is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 Write/Erase cycles endurance. It operates in synchronous mode with a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDIP-T8

e0

9.27 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

24AA044-I/P by Microchip Technology

24AA044-I/P

Microchip Technology

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

1.7V TO 1.8V @ 0.1MHz AND 1.8V TO 2.2V @ 0.4MHz

1 MHz

200

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e3

9.271 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2.5

TS 16949

5.334 mm

I2C

.000001 Amp

3 mA

5.5 V

2.2 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

1.27 mm

DUAL

7.62 mm

5 ms

AT24C64-10PC by Atmel

AT24C64-10PC

Atmel

AT24C64-10PC by Atmel is an 8Kx8 EEPROM with a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. It operates on a 5V supply, has I2C serial bus type, and is commonly used in applications requiring non-volatile memory storage.

DATA RETENTION: 100 YEARS

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e0

9.59 mm

65536 bit

EEPROM

8

1

8

8192 words

8K

SYNCHRONOUS

70 Cel

0 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

5.33 mm

I2C

.000035 Amp

EEPROMs

3 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

HARDWARE

EPC1064VPC8 by Altera

EPC1064VPC8

Altera

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

4 WIRE INTERFACE TO FLEX 8000 DEVICES

6 MHz

COMMON

R-PDIP-T8

e0

9.398 mm

65536 bit

CONFIGURATION MEMORY

1

1

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

220

3.3

Not Qualified

4.318 mm

OTP ROMs

3.6 V

3 V

3.3

NO

MOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

AT28C256-15PC by Atmel

AT28C256-15PC

Atmel

AT28C256-15PC by Atmel is a 32KX8 EEPROM with 10000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 150ns and features a memory density of 262144 bits. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

150 ns

AUTOMATIC WRITE

NO

YES

10

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

225

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

30

YES

15.24 mm

10 ms

AT28C256-15PI by Atmel

AT28C256-15PI

Atmel

AT28C256-15PI by Atmel is a 32KX8 EEPROM with 10000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 150ns and endurance of 262144 bits. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

150 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

240

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

30

YES

15.24 mm

10 ms

AT28C256F-15PI by Atmel

AT28C256F-15PI

Atmel

AT28C256F-15PI by Atmel is a 32KX8 EEPROM with 10000 Write/Erase Cycles. It operates at 5V, has a page size of 64 words, and offers a max access time of 150 ns. Ideal for industrial applications requiring reliable non-volatile memory storage.

150 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

3 ms

AT28HC256-12PC by Atmel

AT28HC256-12PC

Atmel

AT28HC256-12PC by Atmel is a 32KX8 EEPROM with 3-STATE output, operating at 5V. It offers 10000 Write/Erase cycles, 120 ns access time, and supports data polling. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

120 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0003 Amp

EEPROMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT28HC256-70PI by Atmel

AT28HC256-70PI

Atmel

AT28HC256-70PI by Atmel is a 32KX8 EEPROM with 3-STATE output, operating at 5V. It features a max access time of 70ns and can endure up to 10,000 Write/Erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

70 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

EEPROMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT28HC256E-12PI by Atmel

AT28HC256E-12PI

Atmel

Atmel's AT28HC256E-12PI is a 32Kx8 EEPROM with 100,000 Write/Erase Cycles. Operating at 5V, it offers 120ns Access Time and supports Asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage.

120 ns

AUTOMATIC WRITE

NO

YES

100000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0003 Amp

EEPROMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT25010-10PC by Atmel

AT25010-10PC

Atmel

Atmel's AT25010-10PC is a 1024-bit EEPROM with 128x8 organization, operating at 5V. It features SPI serial bus, 3MHz clock frequency, and 1000000 write/erase cycles. Ideal for applications requiring reliable non-volatile memory in commercial temperature environments.

4-WIRE SERIAL INTERFACE

3 MHz

100

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.59 mm

1024 bit

EEPROM

8

1

8

128 words

128

SYNCHRONOUS

70 Cel

0 Cel

128X8

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

5.33 mm

SPI

.0001 Amp

EEPROMs

6 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

24LC21/P by Microchip Technology

24LC21/P

Microchip Technology

24LC21/P by Microchip Technology is an EEPROM with 128x8 organization, operating at 5V. It features I2C control byte 1010XXXR and offers 1000000 write/erase cycles. Ideal for applications requiring low power consumption and reliable non-volatile memory storage in commercial temperature environments.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

R-PDIP-T8

e3

9.46 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

70 Cel

0 Cel

128X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

5

Not Qualified

4.32 mm

I2C

.0001 Amp

EEPROMs

3 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

93LC66A-I/P by Microchip Technology

93LC66A-I/P

Microchip Technology

93LC66A-I/P by Microchip Tech is a 512x8 EEPROM with 1MHz clock freq. Operates at -40 to 85°C, has 1000000 write/erase cycles, and uses MICROWIRE serial bus. Ideal for industrial applications requiring reliable non-volatile memory storage.

1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS

1 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.27 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

TOTEM POLE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

YES

NO

TS 16949

5.33 mm

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

YES

7.62 mm

6 ms

SOFTWARE

XC17128ELPD8C by Xilinx

XC17128ELPD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

131072 bit

CONFIGURATION MEMORY

1

1

1

8

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17128ELPD8I by Xilinx

XC17128ELPD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

131072 bit

CONFIGURATION MEMORY

1

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17128EPD8C by Xilinx

XC17128EPD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.75 V;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

131072 bit

CONFIGURATION MEMORY

1

1

1

8

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17128EPD8I by Xilinx

XC17128EPD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

131072 bit

CONFIGURATION MEMORY

1

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17256ELPD8C by Xilinx

XC17256ELPD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

262144 bit

CONFIGURATION MEMORY

1

1

1

8

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17256ELPD8I by Xilinx

XC17256ELPD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

262144 bit

CONFIGURATION MEMORY

1

1

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17256EPD8C by Xilinx

XC17256EPD8C

Xilinx

The Xilinx XC17256EPD8C is a 256Kx1 EEPROM with synchronous operation and 3-STATE output. It operates at 5V, has a clock frequency of 15MHz, and is ideal for configuration memory applications. With a package style of IN-LINE and through-hole terminal form, it offers high memory density in a compact design.

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

262144 bit

CONFIGURATION MEMORY

1

1

1

8

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17256EPD8I by Xilinx

XC17256EPD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Additional Features: USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

262144 bit

CONFIGURATION MEMORY

1

1

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1736EPD8I by Xilinx

XC1736EPD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

36288 bit

CONFIGURATION MEMORY

1

1

1

8

36288 words

36288

SYNCHRONOUS

85 Cel

-40 Cel

36288X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1765ELPD8C by Xilinx

XC1765ELPD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Equivalence Code: DIP8,.3;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

2.5 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

65536 bit

CONFIGURATION MEMORY

1

1

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1765ELPD8I by Xilinx

XC1765ELPD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

2.5 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

65536 bit

CONFIGURATION MEMORY

1

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1765EPD8C by Xilinx

XC1765EPD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Technology: CMOS;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

65536 bit

CONFIGURATION MEMORY

1

1

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1765EPD8I by Xilinx

XC1765EPD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 10 MHz;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

65536 bit

CONFIGURATION MEMORY

1

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

AT17LV256-10PC by Atmel

AT17LV256-10PC

Atmel

AT17LV256-10PC by Atmel is a 256KX1 EEPROM with 3.3V supply, 10MHz clock frequency, and 75ns access time. It is ideal for configuration memory applications due to its synchronous operation and 3-STATE output characteristics. The package style is IN-LINE with DUAL terminals in a RECTANGULAR shape, making it suitable for various commercial temperature grade environments.

75 ns

IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO

10 MHz

R-PDIP-T8

e0

9.271 mm

262144 bit

CONFIGURATION MEMORY

1

1

1

8

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3.3

Not Qualified

5.334 mm

.00005 Amp

EEPROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

AT17C256-10PI by Atmel

AT17C256-10PI

Atmel

AT17C256-10PI by Atmel is a 256KX1 EEPROM with 3-STATE output, operating at 5V. It features a max clock frequency of 12.5 MHz and industrial temperature grade. Ideal for configuration memory applications due to its serial interface and compact IN-LINE package style.

55 ns

12.5 MHz

R-PDIP-T8

e0

9.398 mm

262144 bit

CONFIGURATION MEMORY

1

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

4.318 mm

.00015 Amp

EEPROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

M24C32-WBN6 by STMicroelectronics

M24C32-WBN6

STMicroelectronics

STMicroelectronics M24C32-WBN6 is an EEPROM with 4Kx8 organization, operating at 5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e0

9.27 mm

32768 bit

EEPROM

8

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

AEC-Q100

5.33 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

HARDWARE

M93C46-WBN6 by STMicroelectronics

M93C46-WBN6

STMicroelectronics

M93C46-WBN6 by STMicroelectronics is an EEPROM with 64x16 organization, 1024-bit memory density, and 1000000 write/erase cycles endurance. It operates at a max clock frequency of 2 MHz in industrial temperature grade applications. The serial bus type is MICROWIRE for synchronous operation with software write protection.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

1024 bit

EEPROM

16

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

SOFTWARE