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DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.

DRAM

Available Parts 1,960

Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
EDB8164B4PT-1DAT-F-R by Micron Technology

EDB8164B4PT-1DAT-F-R

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; No. of Words: 134217728 words; Maximum Seated Height: .8 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDB8164B4PT-1DIT-F-D by Micron Technology

EDB8164B4PT-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Length: 12 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

12 mm

MT40A2G4WE-083E:B by Micron Technology

MT40A2G4WE-083E:B

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

12 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT40A2G8NRE-083E:B by Micron Technology

MT40A2G8NRE-083E:B

Micron Technology

Micron Technology's MT40A2G8NRE-083E:B is a DDR4 DRAM with 2GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. This thin profile memory module is ideal for applications requiring high-speed data processing in compact electronic devices.

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

12 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm

MT40A4G4FSE-083E:A by Micron Technology

MT40A4G4FSE-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

13 mm

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

85 Cel

0 Cel

4GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9.5 mm

MT40A4G4NRE-083E:B by Micron Technology

MT40A4G4NRE-083E:B

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

12 mm

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

85 Cel

0 Cel

4GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MTA18ASF2G72AZ-2G3B1 by Micron Technology

MTA18ASF2G72AZ-2G3B1

Micron Technology

Micron Technology's MTA18ASF2G72AZ-2G3B1 is a DDR DRAM MODULE with 2GX72 organization, 72-bit memory width, and 154.6 Gb density. It operates synchronously at 1.2V, featuring self-refresh capability for power efficiency. Ideal for applications requiring high-speed data processing in servers or workstations due to its dual bank page burst access mode.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MT47H512M4THN-25E:H by Micron Technology

MT47H512M4THN-25E:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

400 MHz

COMMON

R-PBGA-B63

10 mm

2147483648 bit

DDR2 DRAM

4

1

1

63

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA63,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

.014 Amp

DRAMs

217 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm

MT47H64M16HR-3IT:HTR by Micron Technology

MT47H64M16HR-3IT:HTR

Micron Technology

Micron Technology's MT47H64M16HR-3IT:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and fast access times in industrial environments.

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

EDBA164B2PR-1D-F-D by Micron Technology

EDBA164B2PR-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Surface Mount: YES; Terminal Form: BALL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

NOT SPECIFIED

12 mm

MT46V32M16P-5BAIT:J by Micron Technology

MT46V32M16P-5BAIT:J

Micron Technology

Micron Technology's MT46V32M16P-5BAIT:J is a DDR1 DRAM with 32MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access times in a compact small outline package.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT52L1G32D4PG-107WT:B by Micron Technology

MT52L1G32D4PG-107WT:B

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 178; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 32;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

R-PBGA-B178

e1

12 mm

34359738368 bit

LPDDR3 DRAM

32

1

1

178

1073741824 words

1G

SYNCHRONOUS

85 Cel

-30 Cel

1GX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

11.5 mm

EDB4432BBPA-1D-F-D by Micron Technology

EDB4432BBPA-1D-F-D

Micron Technology

Micron Technology's EDB4432BBPA-1D-F-D is a 128MX32 LPDDR2 DRAM with 4294967296 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring single bank page burst access mode in a compact GRID ARRAY package style.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

EDB4432BBPA-1D-F-R by Micron Technology

EDB4432BBPA-1D-F-R

Micron Technology

Micron Technology's EDB4432BBPA-1D-F-R is a 128MX32 LPDDR2 DRAM with 4294967296 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring single bank page burst access mode in a compact GRID ARRAY package style.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

EDB8132B4PB-8D-F-D by Micron Technology

EDB8132B4PB-8D-F-D

Micron Technology

Micron Technology's EDB8132B4PB-8D-F-D is a 256MX32 LPDDR2 DRAM with a square package and PLASTIC/EPOXY body material. It operates in SYNCHRONOUS mode, has a self-refresh feature, and requires a nominal voltage of 1.2V. This memory module is suitable for applications that require high-density data storage and fast access speeds.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

EDB8132B4PM-1D-F-D by Micron Technology

EDB8132B4PM-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Terminal Form: BALL; No. of Functions: 1;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.82 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

EDBA232B2PB-1D-F-D by Micron Technology

EDBA232B2PB-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 1.2; Terminal Form: BALL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

e1

12 mm

17179869184 bit

LPDDR2 DRAM

32

1

1

168

536870912 words

512M

SYNCHRONOUS

512MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

EDBA232B2PF-1D-F-D by Micron Technology

EDBA232B2PF-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: TFBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

e1

12 mm

17179869184 bit

LPDDR2 DRAM

32

1

1

168

536870912 words

512M

SYNCHRONOUS

512MX32

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.02 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

EDBM432B3PF-1D-F-D by Micron Technology

EDBM432B3PF-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Ports: 1; Minimum Supply Voltage (Vsup): 1.14 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

12 mm

12884901888 bit

LPDDR2 DRAM

32

1

1

168

402653184 words

384M

SYNCHRONOUS

384MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.92 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT40A1G8WE-075E:B by Micron Technology

MT40A1G8WE-075E:B

Micron Technology

Micron Technology's MT40A1G8WE-075E:B is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333.33 MHz

COMMON

8

R-PBGA-B78

12 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

.046 Amp

63 mA

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm

MTA18ADF2G72PDZ-2G3B1 by Micron Technology

MTA18ADF2G72PDZ-2G3B1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Ports: 1;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

EDB1332BDBH-1DAAT-F-D by Micron Technology

EDB1332BDBH-1DAAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Maximum Seated Height: 1 mm;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

MT40A256M16GE-075EAIT:B by Micron Technology

MT40A256M16GE-075EAIT:B

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B96

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

8

.058 Amp

1.14 V

72 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT40A512M8RH-075EAAT:B by Micron Technology

MT40A512M8RH-075EAAT:B

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Screening Level: AEC-Q100;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

.06 Amp

1.14 V

61 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A512M8RH-075EAIT:B by Micron Technology

MT40A512M8RH-075EAIT:B

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

1.2 mm

YES

8

.058 Amp

1.14 V

59 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT40A512M8RH-075EAUT:B by Micron Technology

MT40A512M8RH-075EAUT:B

Micron Technology

DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333 MHz

COMMON

8

R-PBGA-B78

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

8

.063 Amp

1.14 V

66 mA

1.26 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

9 mm

MT42L32M16D1FE-25IT:A by Micron Technology

MT42L32M16D1FE-25IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 121; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 16;

FOUR BANK PAGE BURST

SELF REFRESH

R-PBGA-B121

e1

8 mm

536870912 bit

LPDDR2 DRAM

16

1

1

121

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

6.5 mm

MT8KTF51264HZ-1G9P1 by Micron Technology

MT8KTF51264HZ-1G9P1

Micron Technology

MT8KTF51264HZ-1G9P1 by Micron Technology is a DDR3L DRAM MODULE with 512MX64 organization. It operates in synchronous mode, has a self-refresh feature, and a nominal voltage of 1.35V. It is commonly used in commercial applications requiring high memory density and single bank page burst access mode.

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX

R-XZMA-N204

67.6 mm

34359738368 bit

DDR3L DRAM MODULE

64

1

1

204

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.45 mm

ZIG-ZAG

30

3.8 mm

MT48LC8M16A2P-7E:GTR by Micron Technology

MT48LC8M16A2P-7E:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Functions: 1;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

3

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT46H32M16LFBF-6IT:CTR by Micron Technology

MT46H32M16LFBF-6IT:CTR

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:CTR is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access times and high memory capacity in compact devices.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

9 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H128M32L2KQ-5IT:BTR by Micron Technology

MT46H128M32L2KQ-5IT:BTR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Terminal Pitch: .5 mm;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

4294967296 bit

DDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT48H16M32LFCM-75:ATR by Micron Technology

MT48H16M32LFCM-75:ATR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT48LC16M16A2P-75:DTR by Micron Technology

MT48LC16M16A2P-75:DTR

Micron Technology

MT48LC16M16A2P-75:DTR by Micron Technology is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V and is ideal for commercial applications requiring fast and reliable memory performance in a small outline package.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC4M32B2P-6:GTR by Micron Technology

MT48LC4M32B2P-6:GTR

Micron Technology

Micron Technology's MT48LC4M32B2P-6:GTR is a 3.3V Synchronous DRAM with 4MX32 organization, offering 134217728-bit memory density and 5.5ns max access time. Ideal for commercial applications requiring fast and efficient memory operations in a compact small outline package.

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

10.16 mm

MT47H32M16BN-5E:DTR by Micron Technology

MT47H32M16BN-5E:DTR

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

FOUR BANK PAGE BURST

.6 ns

AUTO/SELF REFRESH

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT48H32M16LFCJ-75:ATR by Micron Technology

MT48H32M16LFCJ-75:ATR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Organization: 32MX16;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

R-PBGA-B54

e1

11.5 mm

536870912 bit

SYNCHRONOUS DRAM

16

1

1

54

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT48LC8M16A2P-7ELTR by Micron Technology

MT48LC8M16A2P-7ELTR

Micron Technology

Micron Technology's MT48LC8M16A2P-7ELTR is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 0-70 °C. It features Self Refresh and Four Bank Page Burst access mode, suitable for commercial applications requiring high memory density and fast access times.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC8M32B2B5-7TR by Micron Technology

MT48LC8M32B2B5-7TR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H16M16LFBF-6:ATR by Micron Technology

MT46H16M16LFBF-6:ATR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

9 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46V16M16CY-6IT:KTR by Micron Technology

MT46V16M16CY-6IT:KTR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 16MX16;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

12.5 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT48LC2M32B2P-5:GTR by Micron Technology

MT48LC2M32B2P-5:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

FOUR BANK PAGE BURST

4.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

10.16 mm

MT48LC2M32B2P-6:GTR by Micron Technology

MT48LC2M32B2P-6:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSOP2; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

10.16 mm

MT48LC2M32B2TG-7IT:GTR by Micron Technology

MT48LC2M32B2TG-7IT:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Package Shape: RECTANGULAR; Terminal Position: DUAL;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

10.16 mm

MT48LC4M16A2B4-7E:GTR by Micron Technology

MT48LC4M16A2B4-7E:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC8M16A2B4-75IT:GTR by Micron Technology

MT48LC8M16A2B4-75IT:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Memory Width: 16;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC8M16A2P-7EIT:GTR by Micron Technology

MT48LC8M16A2P-7EIT:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

MT46H64M16LFCK-5IT:ATR by Micron Technology

MT46H64M16LFCK-5IT:ATR

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 64M;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

11.5 mm

1073741824 bit

LPDDR1 DRAM

16

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT46H64M32L2JG-6IT:ATR by Micron Technology

MT46H64M32L2JG-6IT:ATR

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Technology: CMOS;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.9 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm