Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.
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MT44K32M18RB-107EIT:BTR
Micron Technology
RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Supply Current: 2565 mA; Package Style (Meter): GRID ARRAY, THIN PROFILE;
MULTI BANK PAGE BURST
AUTO REFRESH
934.5 MHz
COMMON
2,4,8
S-PBGA-B168
13.5 mm
603979776 bit
RLDRAM3
18
1
168
33554432 words
32M
SYNCHRONOUS
95 Cel
-40 Cel
32MX18
PLASTIC/EPOXY
TBGA
BGA168,13X13,40
SQUARE
GRID ARRAY, THIN PROFILE
1.2 mm
NO
.225 Amp
2565 mA
1.45 V
1.28 V
1.35
YES
CMOS
BALL
1 mm
BOTTOM
MT44K32M18RB-125E:ATR
RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Terminal Form: BALL; Minimum Operating Temperature: 0 Cel;
800 MHz
0 Cel
NOT SPECIFIED
MT44K32M36RB-093E:ATR
RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.28 V; Organization: 32MX36;
1075.2 MHz
e1
1207959552 bit
36
32MX36
260
1140 mA
TIN SILVER COPPER
30
MT44K32M36RB-107E:ATR
RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Memory Width: 36; Memory Density: 1207959552 bit;
1070 mA
MT44K32M36RB-107EIT:ATR
RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Sequential Burst Length: 2,4,8; Minimum Operating Temperature: -40 Cel;
MT48LC4M32B2P-6AAAT:LTR
SYNCHRONOUS DRAM; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR; Organization: 4MX32;
FOUR BANK PAGE BURST
5.4 ns
AUTO/SELF REFRESH
167 MHz
1,2,4,8
R-PDSO-G86
e3
22.22 mm
134217728 bit
SYNCHRONOUS DRAM
32
86
4194304 words
4M
105 Cel
4MX32
TSOP2
TSOP86,.46,20
RECTANGULAR
SMALL OUTLINE, THIN PROFILE
4096
AEC-Q100
1,2,4,8,FP
.045 Amp
120 mA
3.6 V
3 V
3.3
MATTE TIN
GULL WING
.5 mm
DUAL
10.16 mm
MT53E256M32D2DS-053AIT:BTR
LPDDR4X DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit; Interleaved Burst Length: 16,32;
SINGLE BANK PAGE BURST
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
1866 MHz
16,32
R-PBGA-B200
14.5 mm
8589934592 bit
LPDDR4X DRAM
200
268435456 words
256M
256MX32
3-STATE
VFBGA
BGA200,12X20,32/25
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
.8 mm
1.17 V
1.06 V
1.1
10 mm
MT61K512M32KPA-14:BTR
GDDR6 DRAM; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel; Access Mode: MULTI BANK PAGE BURST;
AUTO/SELF REFRESH, IT ALSO REQUIRES 1.25V SUPPLY
R-PBGA-B180
14 mm
17179869184 bit
GDDR6 DRAM
180
536870912 words
512M
512MX32
TFBGA
BGA180,14X18,30
GRID ARRAY, THIN PROFILE, FINE PITCH
1.3905 V
1.3095 V
.75 mm
12 mm
MT61K512M32KPA-16:BTR
Micron Technology's MT61K512M32KPA-16:BTR is a GDDR6 DRAM with 512MX32 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
IS43TR16256BL-107MBLI-TR
Integrated Silicon Solution
IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
4,8
R-PBGA-B96
13 mm
4294967296 bit
DDR3L DRAM
16
3
96
256MX16
BGA96,9X16,32
8192
.028 Amp
254 mA
1.283 V
9 mm
IS43TR16256BL-125KBLI-TR
IS43TR16256BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact grid array package.
228 mA
INDUSTRIAL
IS43TR16256BL-125KBL-TR
IS43TR16256BL-125KBL-TR by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with synchronous operation and self-refresh capability. It has a package style of GRID ARRAY, THIN PROFILE, FINE PITCH and is suitable for applications requiring high memory density and low power consumption.
IS46TR16256BL-125KBLA2-TR
IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
MT40A1G16KNR-075:ETR
MT40A1G16KNR-075:ETR by Micron Technology is a DDR4 DRAM with 1GX16 organization, operating at a max clock frequency of 1333 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.
1333 MHz
DDR4 DRAM
1073741824 words
1G
1GX16
.036 Amp
360 mA
1.26 V
1.14 V
1.2
OTHER
7.5 mm
MT40A1G8SA-062EAAT:ETR
DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
1600 MHz
8
R-PBGA-B78
11 mm
78
1GX8
BGA78,9X13,32
MT40A1G8WE-075EAIT:BTR
Micron Technology's MT40A1G8WE-075EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type.
1333.33 MHz
.025 Amp
149 mA
Tin/Silver/Copper (Sn/Ag/Cu)
8 mm
MT40A1G8WE-075E:BTR
Micron Technology's MT40A1G8WE-075E:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package and common I/O type, suitable for applications requiring high memory density and fast data processing in devices like servers and PCs.
BGA78,6X13,32
.046 Amp
63 mA
MT40A1G8WE-083EAAT:BTR
MT40A1G8WE-083EAAT:BTR by Micron Technology is a DDR4 DRAM with 1GX8 organization, operating at a max clock frequency of 1200.4 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).
1200.4 MHz
138 mA
MT40A1G8WE-083EAIT:BTR
Micron Technology's MT40A1G8WE-083EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory performance in automotive electronics and industrial environments.
MT40A1G8WE-083EAUT:BTR
Micron Technology's MT40A1G8WE-083EAUT:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory in automotive electronics and other industrial environments.
125 Cel
MT40A1G8WE-083E:BTR
Micron Technology's MT40A1G8WE-083E:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.48 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices with a max temperature of 95°C.
1200.48 MHz
.034 Amp
175 mA
MT40A256M16GE-075EAIT:BTR
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 1333.33 MHz; Operating Mode: SYNCHRONOUS;
MT40A256M16GE-083EAIT:BTR
Micron Technology's MT40A256M16GE-083EAIT:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.4 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
MT40A256M16GE-083EAUT:BTR
Micron Technology's MT40A256M16GE-083EAUT:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.4 MHz clock frequency. It features common I/O type, self-refresh mode, and operates in synchronous mode. Ideal for applications requiring high-speed memory access and low power consumption in automotive electronics.
MT40A256M16LY-062EAAT:FTR
Micron Technology's MT40A256M16LY-062EAAT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
MT40A256M16LY-062EAIT:FTR
Micron Technology's MT40A256M16LY-062EAIT:FTR is a DDR4 DRAM with 256MX16 organization, operating at 1600 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics due to AEC-Q100 screening level.
MT40A256M16LY-062EAUT:FTR
Micron Technology's MT40A256M16LY-062EAUT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
MT40A512M16JY-075E:BTR
Micron Technology's MT40A512M16JY-075E:BTR is a DDR4 DRAM with 512MX16 organization, operating at 1333.33 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
512MX16
BGA96,6X16,32
.05 Amp
105 mA
MT40A512M16JY-083EAAT:BTR
MT40A512M16JY-083EAAT:BTR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1200.4 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).
255 mA
MT40A512M16JY-083EAIT:BTR
Micron Technology's MT40A512M16JY-083EAIT:BTR is a DDR4 DRAM with 512MX16 organization, operating at up to 1200.4 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
MT40A512M16JY-083EAUT:BTR
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Operating Temperature: 125 Cel;
MT40A512M16LY-062EAUT:ETR
MT40A512M16LY-062EAUT:ETR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1600 MHz. It is commonly used in applications requiring high-speed and synchronous memory access, such as servers, workstations, and high-performance computing systems.
279 mA
MT40A512M8RH-075EAAT:BTR
DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 105 Cel; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);
10.5 mm
512MX8
MT40A512M8RH-083EAIT:BTR
DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Screening Level: AEC-Q100; Minimum Supply Voltage (Vsup): 1.14 V;
MT40A512M8SA-062EAAT:FTR
DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit; Terminal Form: BALL;
MT40A512M8SA-062EAIT:FTR
DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS; Package Body Material: PLASTIC/EPOXY;
MT40A512M8SA-062EAUT:FTR
Micron Technology's MT40A512M8SA-062EAUT:FTR is a DDR4 DRAM with 512MX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for automotive applications, meeting AEC-Q100 standards. With self-refresh capability and common I/O type, it offers reliable performance in harsh environments.
AS4C128M16D3LC-12BINTR
Alliance Memory
Alliance Memory's AS4C128M16D3LC-12BINTR is a 128MX16 DDR3L DRAM with 800 MHz clock frequency. It operates at 1.35V, has 96 terminals in a grid array package style, and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing.
AUTO REFRESH, SELF REFRESH
2147483648 bit
134217728 words
128M
128MX16
.015 Amp
240 mA
MT40A256M16LY-062EIT:FTR
Micron Technology's MT40A256M16LY-062EIT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as servers, PCs, and networking equipment.
.022 Amp
270 mA
MT40A256M16LY-075:FTR
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
MT40A512M8SA-062EIT:FTR
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
.16 ns
MT40A1G16KD-062E:E
Micron Technology's MT40A1G16KD-062E:E is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package, synchronous operation, and self-refresh capability. Ideal for applications requiring high-speed memory performance in compact form factors.
MT53E128M32D2FW-046AIT:A
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
2133 MHz
LPDDR4 DRAM
85 Cel
128MX32
BGA200,12X22,32/25
1.1 mm
.65 mm
MT53E128M32D2DS-046AAT:A
Micron Technology's MT53E128M32D2DS-046AAT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast clock frequency.
MT53E128M32D2FW-046AUT:A
LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
AUTOMOTIVE
MT53E128M32D2DS-046AUT:A
Micron Technology's MT53E128M32D2DS-046AUT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It has a very thin profile, fine pitch package style suitable for automotive applications. Features include synchronous operation, self-refresh capability, and common I/O type.
MT53E128M16D1DS-053AAT:A
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT53B128M32D1DS-062AIT:A
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