Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.
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MT53E128M16D1FW-046AIT:A
Micron Technology
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
SINGLE BANK PAGE BURST
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
2133 MHz
COMMON
R-PBGA-B200
14.5 mm
2147483648 bit
LPDDR4 DRAM
16
1
200
134217728 words
128M
SYNCHRONOUS
85 Cel
-40 Cel
128MX16
PLASTIC/EPOXY
TFBGA
BGA200,12X22,32/25
RECTANGULAR
GRID ARRAY, THIN PROFILE, FINE PITCH
NOT SPECIFIED
8192
AEC-Q100
1.1 mm
YES
1.06 V
1.17 V
1.1
CMOS
INDUSTRIAL
BALL
.65 mm
BOTTOM
10 mm
MT53E256M32D2FW-046AUT:B
Micron Technology's MT53E256M32D2FW-046AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption.
MULTI BANK PAGE BURST
16,32
e1
8589934592 bit
32
268435456 words
256M
125 Cel
256MX32
3-STATE
260
TIN SILVER COPPER
.8 mm
30
MT53E128M16D1DS-046AIT:A
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
VFBGA
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
MT53E128M16D1DS-053AIT:A
1866 MHz
MT53E128M16D1DS-046AAT:A
105 Cel
MT53E128M32D2DS-053AUT:A
Micron Technology's MT53E128M32D2DS-053AUT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level for automotive applications. The package style is grid array with very thin profile and fine pitch, suitable for single bank page burst access mode in automotive systems.
4294967296 bit
128MX32
AUTOMOTIVE
MT40A1G4HX-083E:A
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 9 mm;
AUTO/SELF REFRESH
R-PBGA-B78
11.5 mm
DDR4 DRAM
4
78
1073741824 words
1G
0 Cel
1GX4
1.2 mm
1.26 V
1.14 V
1.2
OTHER
9 mm
MT40A1G4HX-093E:A
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;
MT40A512M8HX-083E:A
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;
8
536870912 words
512M
512MX8
MT40A512M8HX-093E:A
MT41K128M8DA-107AIT:J
DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Memory Width: 8;
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
10.5 mm
1073741824 bit
DDR3L DRAM
128MX8
1.45 V
1.283 V
1.35
8 mm
MT41K1G4RG-107:N
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;
10.6 mm
7.5 mm
MT41K256M16LY-107:N
Micron Technology's MT41K256M16LY-107:N is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and tablets.
R-PBGA-B96
13.5 mm
96
256MX16
MT41K512M8RG-093:N
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;
MT41K512M8RG-107:N
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
MT42L64M32D1TK-18AAT:C
LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
5.5 ns
533 MHz
4,8,16
R-PBGA-B134
LPDDR2 DRAM
134
67108864 words
64M
64MX32
BGA134,10X17,25
1.2,1.8
Not Qualified
.7 mm
.000025 Amp
DRAMs
220 mA
1.3 V
MT46H128M32L2KQ-48IT:C
LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.7 V;
FOUR BANK PAGE BURST
4.8 ns
S-PBGA-B168
12 mm
LPDDR1 DRAM
168
SQUARE
.75 mm
1.95 V
1.7 V
1.8
.5 mm
MT46H128M32L2KQ-48WT:C
LPDDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Technology: CMOS;
-25 Cel
MT46H64M32LFKQ-5IT:C
LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Words Code: 64M;
5 ns
MT47H64M16HR-25EXIT:H
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: BGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
.4 ns
SELF REFRESH
400 MHz
4,8
R-PBGA-B84
DDR2 DRAM
84
ASYNCHRONOUS
64MX16
BGA
BGA84,9X15,32
GRID ARRAY
.007 Amp
260 mA
MT47H64M16NF-25EXIT:M
Micron Technology's MT47H64M16NF-25EXIT:M is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access times, and multi-bank page burst access mode.
12.5 mm
1.9 V
Tin/Silver/Copper (Sn/Ag/Cu)
MTA18ASF1G72AZ-2G1A1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;
DUAL BANK PAGE BURST
AUTO/SELF REFRESH; WD-MAX
R-XDMA-N288
133.35 mm
77309411328 bit
DDR DRAM MODULE
72
288
1GX72
UNSPECIFIED
DIMM
MICROELECTRONIC ASSEMBLY
31.4 mm
NO
NO LEAD
DUAL
3.9 mm
MT16LSDF6464HY-133G1
SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Position: ZIG-ZAG;
5.4 ns
R-XZMA-N144
67.585 mm
SYNCHRONOUS DRAM MODULE
64
144
65 Cel
64MX64
31.88 mm
3.6 V
3 V
3.3
COMMERCIAL
ZIG-ZAG
3.8 mm
MT46V16M16CY-5BXIT:M
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: BGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.5 V;
R-PBGA-B60
268435456 bit
DDR1 DRAM
60
16777216 words
16M
16MX16
2.7 V
2.5 V
2.6
IS42SM16200D-6BLI
Integrated Silicon Solution
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;
S-PBGA-B54
33554432 bit
SYNCHRONOUS DRAM
3
54
2097152 words
2M
2MX16
IS42VM16200D-6BLI
IS42VM16200D-6BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. Operating at 1.8V, it offers dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring high memory density and fast access times up to 5.5 ns.
IS42VM16200D-75BLI
IS42VM16200D-75BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. It operates at 1.8V, has a max access time of 6ns, and features dual bank page burst access mode. Ideal for industrial applications requiring high-speed and reliable memory performance in compact spaces.
6 ns
MT18KDF2G72AZ-1G6A1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.235 V;
AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
R-XDMA-N240
154618822656 bit
240
2147483648 words
2G
70 Cel
2GX72
18.9 mm
1.235 V
1 mm
4 mm
MT47H32M16NF-25EAIT:H
Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.
536870912 bit
33554432 words
32M
32MX16
.01 Amp
215 mA
MT47H64M8SH-25EAAT:H
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
64MX8
BGA60,9X11,32
150 mA
MT47H64M8SH-25EAIT:H
MTA16ATF1G64HZ-2G1A2
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words Code: 1G;
R-XZMA-N260
69.6 mm
68719476736 bit
1GX64
30.13 mm
3.7 mm
MTA36ADS2G72PZ-2G1A1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Access Mode: DUAL BANK PAGE BURST;
MTA72ASS4G72LZ-2G1A1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 133.35 mm;
309237645312 bit
4294967296 words
4G
4GX72
MT41K1G8SN-107:A
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit;
13.2 mm
1GX8
MT41K1G8SN-107IT:A
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.283 V;
MT41K1G8SN-125:A
Micron Technology's MT41K1G8SN-125:A is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 8589934592 bits. Ideal for applications requiring high-speed data processing in thin-profile devices.
MT41K1G8SN-125IT:A
Micron Technology's MT41K1G8SN-125IT:A is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.
MT41K2G4SN-125:A
2GX4
MT41K512M16HA-107:A
Micron Technology's MT41K512M16HA-107:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
14 mm
512MX16
MT41K512M16HA-107IT:A
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
MT41K512M16HA-125:A
Micron Technology's MT41K512M16HA-125:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact grid array package.
MT41K512M16HA-125IT:A
MT41K512M16HA-125IT:A by Micron Technology is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.
MT4VDDT1664HY-335M1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words Code: 16M;
R-XZMA-N200
67.6 mm
16MX64
31.9 mm
2.3 V
2.5
2.45 mm
MT48LC4M32B2P-6AXIT:L
Micron Technology's MT48LC4M32B2P-6AXIT:L is a 3.3V, 4MX32 Synchronous DRAM with 5.4ns access time and 134217728-bit memory density. Ideal for industrial applications, it features self-refresh mode, operates synchronously, and supports four-bank page burst access mode.
R-PDSO-G86
e3
22.22 mm
134217728 bit
86
4194304 words
4M
4MX32
TSOP2
SMALL OUTLINE, THIN PROFILE
MATTE TIN
GULL WING
10.16 mm
EDF8132A3MA-JD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 178; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;
R-PBGA-B178
LPDDR3 DRAM
178
-30 Cel
.85 mm
MT46H256M32L4LE-48WT:C
Micron Technology's MT46H256M32L4LE-48WT:C is a 256MX32 LPDDR1 DRAM with 32-bit memory width. It operates synchronously at 1.8V, featuring self-refresh and four-bank page burst access mode. Suitable for applications requiring high memory density, fast access time of 5ns, and operating temperatures b/w -25 to 85°C.
MT41J64M16JT-15EIT:GTR
Micron Technology's MT41J64M16JT-15EIT:GTR is a DDR3 DRAM with 64MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data access in thin profile devices.
.125 ns
DDR3 DRAM
1.575 V
1.425 V
1.5
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