Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.
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MT44K32M18RB-107E:B
Micron Technology
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Ports: 1;
MULTI BANK PAGE BURST
AUTO REFRESH
S-PBGA-B168
13.5 mm
603979776 bit
DDR DRAM
18
1
168
33554432 words
32M
SYNCHRONOUS
95 Cel
0 Cel
32MX18
PLASTIC/EPOXY
TBGA
SQUARE
GRID ARRAY, THIN PROFILE
1.2 mm
1.42 V
1.28 V
1.35
YES
CMOS
OTHER
BALL
1 mm
BOTTOM
MT41K512M16VRN-107AAT:P
Micron Technology's MT41K512M16VRN-107AAT:P is a DDR3L DRAM with 512MX16 organization, operating at up to 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
SINGLE BANK PAGE BURST
AUTO/SELF REFRESH
934.57 MHz
COMMON
R-PBGA-B96
e1
14 mm
8589934592 bit
DDR3L DRAM
16
96
536870912 words
512M
105 Cel
-40 Cel
512MX16
TFBGA
BGA96,9X16,32
RECTANGULAR
GRID ARRAY, THIN PROFILE, FINE PITCH
260
8192
AEC-Q100
.022 Amp
304 mA
1.45 V
1.283 V
INDUSTRIAL
TIN SILVER COPPER
.8 mm
30
8 mm
MT61K512M32KPA-16:B
Micron Technology's MT61K512M32KPA-16:B is a GDDR6 DRAM with 512MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact package.
AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V
R-PBGA-B180
17179869184 bit
GDDR6 DRAM
32
180
512MX32
BGA180,14X18,30
NOT SPECIFIED
1.2875 V
1.2125 V
1.25
.75 mm
12 mm
MT40A4G4DVN-062H:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;
DUAL BANK PAGE BURST
R-PBGA-B78
DDR4 DRAM
4
78
4294967296 words
4G
4GX4
BGA
GRID ARRAY
1.26 V
1.14 V
1.2
MT40A8G4CLU-062H:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;
FOUR BANK PAGE BURST
34359738368 bit
8589934592 words
8G
8GX4
Tin/Silver/Copper (Sn/Ag/Cu)
MT40A8G4CLU-075H:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS;
IS43QR16512A-083TBLI
Integrated Silicon Solution
IS43QR16512A-083TBLI by Integrated Silicon Solution is a 512MX16 DDR DRAM with 1200 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
1200 MHz
4,8
3-STATE
.025 Amp
353 mA
10 mm
IS43QR16512A-083TBL
IS43QR16512A-083TBL by Integrated Silicon Solution is a 512MX16 DDR DRAM with 1200 MHz clock frequency, 1.2V supply voltage, and 95°C operating temperature. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in compact electronic devices.
W632GG6NB-12
Winbond Electronics
The Winbond Electronics W632GG6NB-12 is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style with very thin profile and fine pitch, suitable for synchronous multi-bank page burst applications. With a memory density of 2147483648 bits and 16-bit memory width, it offers high performance in compact dimensions.
13 mm
2147483648 bit
DDR3 DRAM
134217728 words
128M
128MX16
VFBGA
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
1.575 V
1.425 V
1.5
7.5 mm
W632GG6NB12I
The Winbond Electronics W632GG6NB12I is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style with very thin profile and fine pitch, suitable for industrial applications requiring high memory density and multi-bank page burst access mode.
W632GG6NB12J
Winbond Electronics' W632GG6NB12J is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style, suitable for industrial applications requiring high memory density and multi-bank page burst access mode. With a temperature range of -40 to 105°C, it offers synchronous operation in a compact form factor.
W632GU6NB11I
Winbond Electronics' W632GU6NB11I is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features a grid array package style, suitable for industrial applications due to its wide temperature range of -40 to 95°C and multi-bank page burst access mode.
W632GU6NB12I
The Winbond Electronics W632GU6NB12I is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features a grid array package style with very thin profile and fine pitch, suitable for industrial applications requiring high memory density and multi-bank page burst access mode.
IS43QR16256B-083RBL
IS43QR16256B-083RBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1200.48 MHz clock frequency, 95°C operating temp, and 1.2mm seated height. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.
1200.48 MHz
8
4294967296 bit
268435456 words
256M
256MX16
.058 Amp
375 mA
MT40A256M16LY-062EAAT:F
Micron Technology's MT40A256M16LY-062EAAT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and reliability in harsh environments.
OPEN-DRAIN
.048 Amp
58 mA
MT40A256M16LY-062EAIT:F
Micron Technology's MT40A256M16LY-062EAIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 95°C.
.046 Amp
56 mA
MT40A256M16LY-062EAUT:F
Micron Technology's MT40A256M16LY-062EAUT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, common I/O type, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package style.
125 Cel
.05 Amp
60 mA
AUTOMOTIVE
MT40A512M8SA-062EAAT:F
Micron Technology's MT40A512M8SA-062EAAT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 105°C.
11 mm
512MX8
BGA78,9X13,32
.047 Amp
51 mA
MT40A512M8SA-062EAIT:F
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;
.045 Amp
49 mA
MT40A512M8SA-062EAUT:F
DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;
.049 Amp
53 mA
MTA9ASF2G72PZ-3G2B1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX;
AUTO/SELF REFRESH; WD-MAX
R-XDMA-N288
133.35 mm
154618822656 bit
DDR4 DRAM MODULE
72
288
2147483648 words
2G
2GX72
UNSPECIFIED
DIMM
MICROELECTRONIC ASSEMBLY
31.4 mm
NO
NO LEAD
DUAL
3.9 mm
MTA18ASF2G72PZ-3G2J3
Micron Technology's MTA18ASF2G72PZ-3G2J3 is a DDR4 DRAM MODULE with 2GX72 organization, operating at up to 1600 MHz clock frequency. It features a memory density of 154618822656 bits and is suitable for applications requiring high-speed synchronous memory access in servers or data centers.
1600 MHz
DIMM288,33
MTA9ASF1G72PZ-3G2J3
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;
77309411328 bit
DDR DRAM MODULE
1073741824 words
1G
1GX72
AS4C256M16D4-75BCN
Alliance Memory
Alliance Memory's AS4C256M16D4-75BCN is a 256MX16 DDR4 DRAM with 1333 MHz clock frequency, 95°C max temp, and 1.2V nominal supply. Ideal for applications requiring high-speed synchronous operation in compact electronic devices.
1333 MHz
.044 Amp
235 mA
AS4C512M8D4-75BCN
Alliance Memory's AS4C512M8D4-75BCN is a 512MX8 DDR4 DRAM with 1333 MHz clock frequency, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
10.6 mm
196 mA
AS4C512M8D4-75BIN
Alliance Memory's AS4C512M8D4-75BIN is a DDR4 DRAM with 512MX8 organization, operating at 1333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
AS4C512M8D4-83BIN
Alliance Memory's AS4C512M8D4-83BIN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
.04 Amp
187 mA
MTA16ATF4G64AZ-3G2B1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;
274877906944 bit
64
4GX64
MTA36ASF8G72PZ-2G9B1
DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;
618475290624 bit
DRAM MODULE
8GX72
MTA4ATF1G64AZ-3G2B1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words: 1073741824 words;
68719476736 bit
1GX64
IS43TR16512S2DL-125KBLI
IS43TR16512S2DL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
800 MHz
LFBGA
GRID ARRAY, LOW PROFILE, FINE PITCH
1.4 mm
246 mA
9 mm
IS43TR16256B-125KBLI-TR
IS43TR16256B-125KBLI-TR by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data access speeds.
3
.029 Amp
276 mA
10
IS43TR16256A-125KBLI-TR
IS43TR16256A-125KBLI-TR by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 1.5V supply voltage, operating at -40 to 95 °C. It features synchronous operation, common I/O type, and 4/8 sequential burst length. Ideal for industrial applications requiring high memory density and multi-bank page burst access mode.
4, 8
BGA96,6X16,32
.057 Amp
MT46V16M16CY-5B:KTR
DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 268435456 bit;
.7 ns
R-PBGA-B60
12.5 mm
268435456 bit
DDR1 DRAM
60
16777216 words
16M
70 Cel
16MX16
2.7 V
2.5 V
2.6
COMMERCIAL
IS43LD32128B-25BLI
IS43LD32128B-25BLI by Integrated Silicon Solution is a 128MX32 LPDDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 4,294,967,296 bits. This DRAM is commonly used in applications that require high-speed data storage and retrieval.
also operates with 1.8v nom supply
400 MHz
4,8,16
R-PBGA-B134
11.5 mm
LPDDR2 DRAM
134
85 Cel
128MX32
BGA134,10X17,25
1.1 mm
1.3 V
.65 mm
IS43QR16256B-075UBLI
IS43QR16256B-075UBLI by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1333.33 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
1333.33 MHz
.062 Amp
385 mA
IS43QR16256B-075UBL
IS43QR16256B-075UBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1333.33 MHz clock frequency, suitable for applications requiring high-speed memory access. It operates synchronously at 1.2V and features dual bank page burst access mode, making it ideal for systems demanding efficient data processing. The package style is grid array with thin profile and fine pitch, facilitating compact design integration.
IS43QR16512A-075VBLI
IS43QR16512A-075VBLI by Integrated Silicon Solution is a DDR4 DRAM with 512MX16 organization, operating at 1333 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
65536
IS43QR16512A-075VBL
IS43QR16512A-075VBL by Integrated Silicon Solution is a 512MX16 DDR4 DRAM with 1333 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices.
MT41K512M16VRN-107AAT:PTR
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT41K512M16VRN-107AIT:PTR
Micron Technology's MT41K512M16VRN-107AIT:PTR is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and low power consumption.
MT41K512M8DA-093:PTR
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
1066 MHz
10.5 mm
.012 Amp
150 mA
MT44K16M36RB-093E:BTR
DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Package Equivalence Code: BGA168,13X13,40;
1075 MHz
2,4
36
100 Cel
16MX36
BGA168,13X13,40
.225 Amp
2840 mA
MT44K16M36RB-093EIT:BTR
DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Interleaved Burst Length: 2,4;
MT44K16M36RB-093F:BTR
RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Clock Frequency (fCLK): 1075.2 MHz; No. of Functions: 1;
1075.2 MHz
2,4,8
RLDRAM3
MT44K16M36RB-107E:BTR
RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Organization: 16MX36; Width: 13.5 mm;
934.5 MHz
2665 mA
MT44K32M18RB-093E:BTR
RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.28 V; Maximum Clock Frequency (fCLK): 1075.2 MHz;
2620 mA
MT44K32M18RB-107E:BTR
RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; JESD-609 Code: e1; Length: 13.5 mm;
2565 mA
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