Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.
Add filters
All
Selected
MTA36ASF2G72PZ-2G3B1
Micron Technology
Micron Technology's MTA36ASF2G72PZ-2G3B1 is a DDR DRAM MODULE with 2GX72 organization, 72-bit memory width, and 154.6 Gb density. Operating in synchronous mode at 1.2V, it suits applications requiring high-speed data processing and storage in servers or workstations.
DUAL BANK PAGE BURST
AUTO/SELF REFRESH; WD-MAX
R-XDMA-N288
133.35 mm
154618822656 bit
DDR DRAM MODULE
72
1
288
2147483648 words
2G
SYNCHRONOUS
85 Cel
0 Cel
2GX72
UNSPECIFIED
DIMM
RECTANGULAR
MICROELECTRONIC ASSEMBLY
31.4 mm
YES
1.26 V
1.14 V
1.2
NO
CMOS
OTHER
NO LEAD
DUAL
3.9 mm
MTA72ASS8G72PSZ-2S6G1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.26 V;
618475290624 bit
8589934592 words
8G
8GX72
MT40A256M16GE-083EAAT:B
Micron Technology's MT40A256M16GE-083EAAT:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 105°C.
MULTI BANK PAGE BURST
AUTO/SELF REFRESH
COMMON
8
R-PBGA-B96
e1
14 mm
4294967296 bit
DDR4 DRAM
16
96
268435456 words
256M
105 Cel
-40 Cel
256MX16
3-STATE
PLASTIC/EPOXY
TFBGA
BGA96,9X16,32
GRID ARRAY, THIN PROFILE, FINE PITCH
260
AEC-Q100
1.2 mm
.059 Amp
71 mA
INDUSTRIAL
Tin/Silver/Copper (Sn/Ag/Cu)
BALL
.8 mm
BOTTOM
30
9 mm
MT40A256M16GE-083EAIT:B
Micron Technology's MT40A256M16GE-083EAIT:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access.
95 Cel
.057 Amp
69 mA
MT40A256M16GE-083EAUT:B
Micron Technology's MT40A256M16GE-083EAUT:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package style.
125 Cel
.062 Amp
76 mA
AUTOMOTIVE
MT40A512M8RH-083EAAT:B
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .059 Amp;
R-PBGA-B78
10.5 mm
78
536870912 words
512M
512MX8
BGA78,9X13,32
58 mA
MT40A512M8RH-083EAIT:B
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS;
56 mA
MT40A512M8RH-083EAUT:B
DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
1200 MHz
63 mA
AS4C1G8MD3L-12BCN
Alliance Memory
Alliance Memory's AS4C1G8MD3L-12BCN is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. Featuring synchronous operation and self-refresh capability, it offers 1073741824 words of memory with a width of 8 bits. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.
AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
13.2 mm
8589934592 bit
DDR3L DRAM
3
1073741824 words
1G
1GX8
1.45 V
1.283 V
1.35
MT8KTF25664HZ-1G6K1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
SINGLE BANK PAGE BURST
AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX
800 MHz
R-XZMA-N204
67.6 mm
17179869184 bit
64
204
70 Cel
256MX64
DIMM204,24
Not Qualified
8192
30.15 mm
.096 Amp
DRAMs
1248 mA
COMMERCIAL
.6 mm
ZIG-ZAG
3.8 mm
AS4C16M32MS-7BCN
Alliance Memory's AS4C16M32MS-7BCN is a 16MX32 Synchronous DRAM with 536870912-bit memory density. Operating at 1.8V, it offers a max access time of 5.4ns and features self-refresh capability. Ideal for applications requiring high-speed data storage in compact devices like smartphones and tablets.
FOUR BANK PAGE BURST
5.4 ns
R-PBGA-B90
13 mm
536870912 bit
SYNCHRONOUS DRAM
32
90
16777216 words
16M
-25 Cel
16MX32
VFBGA
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
1 mm
1.95 V
1.7 V
1.8
8 mm
MT18KSF1G72HZ-1G6E2
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Surface Mount: NO;
AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
e4
77309411328 bit
1GX72
GOLD
W989D6DBGX6E
Winbond Electronics
W989D6DBGX6E by Winbond Electronics is a 32MX16 SDRAM with 536MB memory density. Operating at 1.8V, it offers synchronous self-refresh mode and fast access time of 5ns. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.
5 ns
R-PBGA-B54
54
33554432 words
32M
32MX16
NOT SPECIFIED
1.025 mm
MT41K512M16HA-125AIT:ATR
Micron Technology's MT41K512M16HA-125AIT:ATR is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in harsh environments.
512MX16
MT40A1G8WE-083EAAT:B
Micron Technology's MT40A1G8WE-083EAAT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type. With self-refresh capability and wide temperature range (-40°C to 105°C), it offers reliable performance in demanding environments.
12 mm
.027 Amp
184 mA
MT40A4G4NRE-075E:B
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B78;
SELF REFRESH
4
4294967296 words
4G
4GX4
MT40A512M16JY-075EAIT:B
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit;
1333 MHz
.025 Amp
262 mA
MT40A512M16JY-083EAAT:B
Micron Technology's MT40A512M16JY-083EAAT:B is a DDR4 DRAM with 512MX16 organization, operating at up to 1200 MHz. It features a thin profile grid array package and operates in synchronous mode with self-refresh capability. Ideal for applications requiring high-speed memory performance in automotive electronics and industrial systems.
.028 Amp
254 mA
MT40A512M16JY-083EAIT:B
Micron Technology's MT40A512M16JY-083EAIT:B is a DDR4 DRAM with 512MX16 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
252 mA
AS4C256M16D3A-12BIN
Alliance Memory's AS4C256M16D3A-12BIN is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliability in a compact grid array package.
DDR3 DRAM
1.575 V
1.425 V
1.5
MT48LC16M16A2P-6AXIT:G
Micron Technology's MT48LC16M16A2P-6AXIT:G is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, operating at 3.3V. It features a small outline, thin profile package and offers 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability.
167 MHz
1,2,4,8
R-PDSO-G54
e3
22.22 mm
268435456 bit
16MX16
TSOP2
TSOP54,.46,32
SMALL OUTLINE, THIN PROFILE
1,2,4,8,FP
.0025 Amp
100 mA
3.6 V
3 V
3.3
Matte Tin (Sn)
GULL WING
10.16 mm
MT52L256M64D2GN-107WT:B
LPDDR3 DRAM; No. of Terminals: 256; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.14 V; Terminal Finish: TIN SILVER COPPER;
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
S-PBGA-B256
LPDDR3 DRAM
256
SQUARE
.7 mm
1.3 V
TIN SILVER COPPER
.4 mm
MTA16ATF2G64AZ-3G2E1
Micron Technology's MTA16ATF2G64AZ-3G2E1 is a 2GX64 DDR DRAM MODULE with 64-bit memory width and 137.4 Gb density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.
137438953472 bit
2GX64
MTA16ATF2G64HZ-3G2E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;
R-XZMA-N260
69.6 mm
30.13 mm
3.7 mm
MTA18ADF2G72AZ-3G2E1
Micron's MTA18ADF2G72AZ-3G2E1 DDR DRAM Module features 2GX72 organization, 154618822656-bit memory density, and operates at 1.2V. Ideal for applications requiring high-speed synchronous memory with dual bank page burst access mode in microelectronic assemblies.
18.9 mm
MTA18ASF2G72PDZ-3G2E1
MTA18ASF2G72PDZ-3G2E1 by Micron Technology is a DDR4 DRAM MODULE with 2GX72 organization, operating at 1600 MHz. It features a memory density of 154618822656 bits and supports DUAL BANK PAGE BURST access mode. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
1600 MHz
DDR4 DRAM MODULE
OPEN-DRAIN
DIMM288,33
31.55 mm
MTA18ASF2G72PZ-3G2E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 133.35 mm;
MTA4ATF51264AZ-3G2E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED;
34359738368 bit
512MX64
2.7 mm
MTA4ATF51264HZ-3G2E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;
WD-MAX
2.5 mm
MTA8ATF1G64HZ-3G2E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 64;
68719476736 bit
1GX64
MTA9ADF1G72PZ-2G6D1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;
MTA9ASF1G72PKIZ-3G2E1
DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;
80 mm
4 mm
MTA9ASF1G72PZ-3G2E1
EDB8132B4PM-1DAT-F-D
LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Ports: 1; Maximum Seated Height: .82 mm;
S-PBGA-B168
LPDDR2 DRAM
168
256MX32
.82 mm
Tin/Silver/Copper (Sn96.8Ag3.0Cu0.2)
.5 mm
AS4C64M16D2A-25BCN
Alliance Memory's AS4C64M16D2A-25BCN is a 64MX16 DDR2 DRAM with 1.8V supply, operating from -40 to 85°C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.
R-PBGA-B84
12.5 mm
1073741824 bit
DDR2 DRAM
84
67108864 words
64M
64MX16
265
1.9 V
20
AS4C256M16D3B-12BIN
Alliance Memory's AS4C256M16D3B-12BIN is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. Featuring a package style of GRID ARRAY, it has a memory density of 4294967296 bit and operates at temperatures ranging from 0 to 85 °C. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.
13.5 mm
MT52L256M64D2LZ-107XT:B
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Self Refresh: YES;
933 MHz
S-PBGA-B216
216
-30 Cel
BGA216,29X29,16
.012 Amp
320 mA
MT18KSF51272HZ-1G6K2
Micron Technology's MT18KSF51272HZ-1G6K2 is a 512MX72 DDR DRAM MODULE with 38654705664 bit memory density. It operates synchronously at 1.35V, featuring self-refresh capability and dual bank page burst access mode. Ideal for commercial applications requiring high-speed and reliable memory performance.
38654705664 bit
512MX72
EDF8164A3MA-GD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS;
S-PBGA-B253
11 mm
253
134217728 words
128M
128MX64
.85 mm
EDFA164A2MA-GD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Length: 11 mm;
EDFA164A2MA-JD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.14 V;
EDFA364A3MA-GD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; No. of Functions: 1;
EDFB164A1MA-GD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Terminal Position: BOTTOM;
.95 mm
EDFB164A1MA-JD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Self Refresh: YES;
EDFP164A3PD-JD-F-D
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 256; Package Code: VFBGA; Package Shape: SQUARE; No. of Words Code: 384M;
25769803776 bit
402653184 words
384M
384MX64
MT40A1G8SA-062E:E
Micron Technology's MT40A1G8SA-062E:E is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
BGA78,6X13,32
65536
7.5 mm
MT40A1G8SA-075:E
MT40A1G8SA-075:E by Micron Technology is a DDR4 DRAM with 1GX8 organization, 1073741824 words, and 8589934592 bit memory density. It operates synchronously, has self-refresh capability, and is commonly used in multi-bank page burst access mode applications.
MT40A2G4SA-062E:E
Micron Technology's MT40A2G4SA-062E:E is a DDR4 DRAM with 2GX4 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
2GX4
© 2023 All rights reserved
