Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.
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MT40A512M16JY-062E:BTR
Micron Technology
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;
MULTI BANK PAGE BURST
AUTO/SELF REFRESH
R-PBGA-B96
14 mm
8589934592 bit
DDR4 DRAM
16
1
96
536870912 words
512M
SYNCHRONOUS
95 Cel
0 Cel
512MX16
PLASTIC/EPOXY
TFBGA
RECTANGULAR
GRID ARRAY, THIN PROFILE, FINE PITCH
1.2 mm
YES
1.26 V
1.14 V
1.2
CMOS
OTHER
BALL
.8 mm
BOTTOM
8 mm
MT40A512M8RH-083EAAT:BTR
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Standby Voltage: 1.14 V;
1200.4 MHz
COMMON
8
R-PBGA-B78
e1
10.5 mm
4294967296 bit
78
105 Cel
-40 Cel
512MX8
3-STATE
BGA78,9X13,32
260
AEC-Q100
INDUSTRIAL
Tin/Silver/Copper (Sn/Ag/Cu)
30
9 mm
MT40A512M8RH-083EAUT:BTR
DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS;
125 Cel
AUTOMOTIVE
MT40A8G4CLU-062H:ETR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;
FOUR BANK PAGE BURST
34359738368 bit
4
8589934592 words
8G
8GX4
BGA
GRID ARRAY
MT40A8G4CLU-075H:ETR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS;
MT41K256M8DA-107:KTR
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;
2147483648 bit
DDR3L DRAM
3
268435456 words
256M
256MX8
1.45 V
1.283 V
1.35
TIN SILVER COPPER
MT41K512M4DA-125:KTR
Micron Technology's MT41K512M4DA-125:KTR is a DDR3L DRAM with 512MX4 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and tablets.
512MX4
MT44K32M36RB-083F:ATR
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Operating Temperature: 0 Cel;
AUTO REFRESH
S-PBGA-B168
13.5 mm
1207959552 bit
DDR DRAM
36
168
33554432 words
32M
32MX36
TBGA
SQUARE
GRID ARRAY, THIN PROFILE
1.42 V
1.28 V
1 mm
MT49H16M18CSJ-25IT:BTR
DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;
AUTO REFRESH; TERM PITCH-MAX
R-PBGA-B144
18.5 mm
301989888 bit
18
144
16777216 words
16M
85 Cel
16MX18
NOT SPECIFIED
1.9 V
1.7 V
1.8
11 mm
MT49H16M36SJ-18:BTR
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;
603979776 bit
16MX36
MT49H16M36SJ-18IT:BTR
Micron Technology's MT49H16M36SJ-18IT:BTR is a 16MX36 DDR DRAM with 1.8V supply, operating at -40 to 85°C. It features synchronous operation, industrial temperature grade, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in compact devices.
MT49H16M36SJ-25E:BTR
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;
MT49H8M36SJ-25E:BTR
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;
8388608 words
8M
8MX36
MT49H8M36SJ-25IT:BTR
DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 8388608 words;
MTA9ASF1G72PZ-3G2E2
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 72;
SINGLE BANK PAGE BURST
1612 MHz
R-XDMA-N288
133.35 mm
77309411328 bit
DDR4 DRAM MODULE
72
288
1073741824 words
1G
1GX72
OPEN-DRAIN
UNSPECIFIED
DIMM
DIMM288,33
MICROELECTRONIC ASSEMBLY
31.55 mm
.198 Amp
1710 mA
NO
NO LEAD
DUAL
3.9 mm
MTA16ATF2G64HZ-2G1B1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Shape: RECTANGULAR; No. of Functions: 1; Maximum Operating Temperature: 95 Cel;
DUAL BANK PAGE BURST
AUTO/SELF REFRESH; WD-MAX
R-XZMA-N260
69.6 mm
137438953472 bit
DDR DRAM MODULE
64
2147483648 words
2G
2GX64
30.13 mm
ZIG-ZAG
3.7 mm
MTA16ATF2G64HZ-2G6E1
Micron Technology's MTA16ATF2G64HZ-2G6E1 is a DDR DRAM MODULE with 2GX64 organization, 64-bit memory width, and 137.4 Gb memory density. It operates synchronously at 1.2V and features self-refresh capability. Ideal for applications requiring high-speed data processing in compact systems.
MT53B1024M32D4NQ-062WT:C
DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS; No. of Words: 1073741824 words;
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
1600 MHz
16,32
R-PBGA-B200
14.5 mm
32
200
-30 Cel
1GX32
VFBGA
BGA200,12X22,32/25
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
.95 mm
1.17 V
1.06 V
1.1
10 mm
AS4C16M16SA-7TCNTR
Alliance Memory
AS4C16M16SA-7TCNTR by Alliance Memory is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for applications requiring high-speed memory access in compact spaces due to its small outline and thin profile package style.
5.4 ns
143 MHz
1,2,4,8
R-PDSO-G54
22.22 mm
268435456 bit
SYNCHRONOUS DRAM
54
70 Cel
16MX16
TSOP2
TSOP54,.46,32
SMALL OUTLINE, THIN PROFILE
8192
1,2,4,8,FP
.02 Amp
55 mA
3.6 V
3 V
3.3
GULL WING
10.16 mm
AS4C1G8MD3L-12BCNTR
Alliance Memory's AS4C1G8MD3L-12BCNTR is a DDR3L DRAM with 1GX8 organization, operating at up to 800 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
800 MHz
4,8
13.2 mm
1GX8
.011 Amp
125 mA
AS4C256M16D3B-12BINTR
Alliance Memory's AS4C256M16D3B-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, suitable for industrial applications. It features synchronous operation, common I/O type, and self-refresh capability. With a thin profile and fine pitch package style, it offers high memory density of 4294967296 bits.
DDR3 DRAM
256MX16
BGA96,9X16,32
.032 Amp
1.425 V
1.575 V
1.5
AS4C4M32SA-7TCNTR
SYNCHRONOUS DRAM; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;
e3
MATTE TIN
40
AS4C512M16D3L-12BCNTR
Alliance Memory's AS4C512M16D3L-12BCNTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. Featuring synchronous mode and self-refresh capability, it has a thin profile grid array package suitable for applications requiring high-speed memory access and low power consumption.
185 mA
AS4C512M16D3L-12BINTR
Alliance Memory's AS4C512M16D3L-12BINTR is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, suitable for industrial applications. Features include 1.35V nominal voltage, 95°C max operating temp, and multi-bank page burst access mode. Ideal for high-performance systems requiring low power consumption and fast data processing.
AS4C64M16D2A-25BCNTR
Alliance Memory's AS4C64M16D2A-25BCNTR is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
.4 ns
400 MHz
R-PBGA-B84
12.5 mm
1073741824 bit
DDR2 DRAM
84
67108864 words
64M
64MX16
BGA84,9X15,32
.01 Amp
170 mA
MT53B512M32D2NP-062WT:C
Micron Technology's MT53B512M32D2NP-062WT:C is a DDR4 DRAM with 512MX32 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a max clock frequency of 1600 MHz.
17179869184 bit
512MX32
MTA8ATF2G64HZ-3G2E1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 64;
R-XDMA-N260
MT52L256M64D2PP-107WT:B
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Organization: 256MX64;
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
CONFIGURABLE
S-PBGA-B216
12 mm
LPDDR3 DRAM
216
256MX64
BGA216,12X12,16
1.3 V
.4 mm
IS42S16400J-6BLI-TR
Integrated Silicon Solution
IS42S16400J-6BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 166MHz. It features self-refresh mode, 54 terminals in a thin profile grid array package, and supports common I/O type. Ideal for industrial applications requiring fast memory access and high density storage capabilities.
166 MHz
S-PBGA-B54
67108864 bit
4194304 words
4M
4MX16
BGA54,9X9,32
Not Qualified
4096
.002 Amp
DRAMs
150 mA
W9864G6JT-6ITR
Winbond Electronics
W9864G6JT-6ITR by Winbond Electronics is a 4MX16 Synchronous DRAM with 67108864 bit memory density. It operates at 3.3V, has a max access time of 5ns, and supports four bank page burst access mode. This thin profile memory IC is ideal for industrial applications requiring high-speed data processing in compact spaces.
5 ns
AS4C32M16SB-7BINTR
Alliance Memory's AS4C32M16SB-7BINTR is a 32MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and a thin profile grid array package.
COMMON/SEPARATE
536870912 bit
32MX16
.008 Amp
120 mA
AS4C32M16SB-7BIN
Alliance Memory's AS4C32M16SB-7BIN is a 32MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and a thin profile grid array package.
MT53E768M32D4DT-053AIT:E
Micron Technology's MT53E768M32D4DT-053AIT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 1866 MHz. It features a very thin profile package style, common I/O type, and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast clock frequencies up to 1.17V supply voltage.
SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX
1866 MHz
25769803776 bit
LPDDR4 DRAM
805306368 words
768M
768MX32
BGA200,12X20,32/25
IS43TR81024BL-107MBLI
IS43TR81024BL-107MBLI by Integrated Silicon Solution is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.
IS46TR16640CL-107MBLA2
IS46TR16640CL-107MBLA2 by Integrated Silicon Solution is a 64MX16 DDR3 DRAM with 1.35V supply voltage, operating in synchronous mode with self-refresh capability. It features a memory density of 1073741824 bits and is suitable for industrial applications requiring multi-bank page burst access mode at temperatures ranging from -40 to 105°C.
13 mm
IS43LQ32256A-062BLI
IS43LQ32256A-062BLI by Integrated Silicon Solution is a 256MX32 LPDDR4 DRAM with 1600 MHz clock frequency. It operates synchronously at temperatures from -40 to 85 °C, suitable for high-performance applications requiring fast data processing and multi-bank page burst access mode. The package style is grid array, thin profile, fine pitch, making it ideal for compact electronic devices.
TERM PITCH-MAX; ALSO REQUIRE SUPPLY VOLTAGE 1.06V TO 1.17V
256MX32
16384
1.1 mm
1.95 V
.65 mm
IS43LQ16128A-062BLI
IS43LQ16128A-062BLI by Integrated Silicon Solution is a 128MX16 LPDDR4 DRAM with 1600 MHz clock frequency. It operates in synchronous mode, has a memory density of 2147483648 bit, and supports multi-bank page burst access. Ideal for industrial applications requiring high-speed data processing and low power consumption.
terminal pitch-max
134217728 words
128M
128MX16
.85 mm
MT40A1G16RC-062EIT:B
Micron Technology's MT40A1G16RC-062EIT:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
1GX16
MT40A2G8VA-062E:B
Micron Technology's MT40A2G8VA-062E:B is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data processing in devices like servers and high-performance computers.
2GX8
MT40A4G4VA-062E:B
Micron Technology's MT40A4G4VA-062E:B is a DDR4 DRAM with 4GX4 organization, operating at 1600 MHz. It features a thin profile grid array package with 78 terminals and operates synchronously. Ideal for applications requiring high-speed memory access in devices like servers and high-performance computing systems.
4294967296 words
4G
4GX4
MTA18ASF2G72PDZ-3G2J3
Micron Technology's MTA18ASF2G72PDZ-3G2J3 is a DDR4 DRAM MODULE with 2GX72 organization, 1600 MHz clock frequency, and 154618822656 bit memory density. It operates synchronously at 1.2V and is ideal for high-performance computing applications requiring fast data processing.
154618822656 bit
2GX72
MT40A8G4BAF-062E:B
DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;
BGA78,9X11,32
277 mA
MT40A4G8BAF-062E:B
Micron Technology's MT40A4G8BAF-062E:B is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a density of 34359738368 bits.
4GX8
245 mA
MTA72ASS16G72PSZ-3S2B1
Micron Technology's MTA72ASS16G72PSZ-3S2B1 is a DDR4 DRAM MODULE with 16GX72 organization, 1600 MHz clock frequency, and 1236950581248 bit memory density. It operates synchronously at 1.2V, suitable for high-performance computing applications requiring fast data processing and storage capabilities.
1236950581248 bit
17179869184 words
16G
16GX72
MTA18ASF2G72HBZ-3G2E1
DDR4 DRAM MODULE; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Ports: 1; Maximum Operating Temperature: 105 Cel;
30.15 mm
.468 Amp
1989 mA
MT40A512M16LY-062EAAT:E
Micron Technology's MT40A512M16LY-062EAAT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 105 °C, and has a max supply voltage of 1.26 V. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
275 mA
7.5 mm
MTA4ATF1G64HZ-3G2E1
Micron Technology's MTA4ATF1G64HZ-3G2E1 is a DDR4 DRAM MODULE with 1GX64 organization, operating at up to 1600 MHz. It features self-refresh capability and synchronous operation, making it ideal for high-performance computing applications.
68719476736 bit
1GX64
MT40A2G8JC-062E:E
Micron Technology's MT40A2G8JC-062E:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access such as servers, workstations, and high-performance computing systems.
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