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MTA72ASS16G72PSZ-3S2B1

Micron Technology

MTA72ASS16G72PSZ-3S2B1 by Micron Technology

Micron Technology's MTA72ASS16G72PSZ-3S2B1 is a DDR4 DRAM MODULE with 16GX72 organization, 1600 MHz clock frequency, and 1236950581248 bit memory density. It operates synchronously at 1.2V, suitable for high-performance computing applications requiring fast data processing and storage capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 23,600 parts In-Stock

1+ parts

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23,600

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Vyrian

USA . 3,720 parts In-Stock

1+ parts

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3,720

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Digiode

USA . 1,159 parts In-Stock

1+ parts

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1,159

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 73 parts In-Stock

1+ parts

$17.360

100+ parts

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73

$17.360

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Ampacity Inc.

Singapore . 825 parts In-Stock

1+ parts

$29.000

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825

$29.000

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Argo Parts USA

USA . 5,844 parts In-Stock

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5,844

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Continental Prestige Electronics

USA . 3,492 parts In-Stock

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3,492

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Corphita

USA . 1,545 parts In-Stock

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1,545

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Enhance your system's performance with the Micron Technology MTA72ASS16G72PSZ-3S2B1 DDR4 DRAM MODULE. Trusted by industry professionals, Micron Technology delivers top-of-the-line quality and reliability in every product. This DRAM module offers seamless synchronous operation and a common input/output type for easy integration into your system. With a high memory density and fast clock frequency, this module is ideal for applications that require fast data processing and multitasking capabilities. Upgrade your system today and experience the unmatched value and benefits of Micron Technology's innovative memory solutions.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on PCBs, making this product suitable for mass production and integration into various electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transmitted and processed at a synchronized rate, enhancing overall system performance and stability.

Nominal Supply Voltage / Vsup (V): 1.2

Low voltage requirement of 1.2V reduces power consumption and heat generation, contributing to energy efficiency and prolonging device lifespan.

Maximum Clock Frequency (fCLK): 1600 MHz

High maximum clock frequency of 1600 MHz allows for fast data transfer and processing speeds, making this product ideal for high-performance computing tasks.

Memory Density: 1236950581248 bit

Large memory density of 1236950581248 bits provides ample storage capacity for data-intensive applications and multitasking without compromising speed or performance.

Technical Specifications

DRAM MTA72ASS16G72PSZ-3S2B1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Maximum Clock Frequency (fCLK):

1600 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-XDMA-N288

Memory Density:

1236950581248 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Terminals:

288

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16GX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Trade Compliance

MTA72ASS16G72PSZ-3S2B1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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