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AS4C512M16D3L-12BINTR

Alliance Memory

AS4C512M16D3L-12BINTR by Alliance Memory

Alliance Memory's AS4C512M16D3L-12BINTR is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, suitable for industrial applications. Features include 1.35V nominal voltage, 95°C max operating temp, and multi-bank page burst access mode. Ideal for high-performance systems requiring low power consumption and fast data processing.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 8,684 parts In-Stock

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VNN

France . 4,103 parts In-Stock

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Kruse Electronics AG

Switzerland . 1,000 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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AZTECH Wire

Italy . 357 parts In-Stock

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$15.860

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Kepictronics

USA . 738 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Experience exceptional performance and reliability with the AS4C512M16D3L-12BINTR by Alliance Memory. As a leading manufacturer in the industry, Alliance Memory delivers top-quality DRAM products that are perfect for a wide range of applications. With its advanced features and innovative technology, this DDR3L DRAM ensures efficient operation and seamless multitasking. Trust Alliance Memory to provide you with the best value, benefits, and advantages in memory solutions for your projects. Elevate your performance with Alliance Memory today!

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - The use of plastic/epoxy material in the package body makes the product lightweight and durable.

Surface Mount:

YES - The surface mount feature simplifies the installation process and saves space on the board.

Package Shape:

RECTANGULAR - The rectangular package shape allows for efficient placement on the PCB.

Operating Mode:

SYNCHRONOUS - The synchronous operating mode ensures faster data transfer and more reliable performance.

Self Refresh:

YES - The self-refresh capability helps in reducing power consumption and prolonging the product's lifespan.

Input/Output Type:

COMMON - The common input/output type makes it compatible with a wide range of devices.

Nominal Supply Voltage / Vsup (V):

1.35 - The low nominal supply voltage of 1.35V helps in reducing power consumption and heat generation.

No. of Terminals:

96 - The high number of terminals allows for efficient data transfer and connectivity.

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH - The grid array with thin profile and fine pitch ensures better signal integrity and space-saving design.

Maximum Operating Temperature:

95 °C - The high maximum operating temperature of 95°C ensures reliable performance in various environments.

Technical Specifications

DRAM AS4C512M16D3L-12BINTR attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Clock Frequency (fCLK):

800 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

JESD-609 Code:

e1

Length:

14 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.011 Amp

Minimum Standby Voltage:

1.283 V

Maximum Supply Current:

185 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

AS4C512M16D3L-12BINTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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