Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.
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MT53B256M32D1DS-062AUT:C
Micron Technology
LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
SINGLE BANK PAGE BURST
SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX
1600 MHz
COMMON
16,32
R-PBGA-B200
14.5 mm
8589934592 bit
LPDDR4 DRAM
32
1
200
268435456 words
256M
SYNCHRONOUS
125 Cel
-40 Cel
256MX32
PLASTIC/EPOXY
VFBGA
BGA200,12X22,32/25
RECTANGULAR
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
16384
.8 mm
YES
.005 Amp
445 mA
1.17 V
1.06 V
1.1
CMOS
BALL
BOTTOM
10 mm
MT53B256M32D1DS-062AAT:C
Micron Technology's MT53B256M32D1DS-062AAT:C is a LPDDR4 DRAM with 256MX32 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
105 Cel
.0033 Amp
410 mA
INDUSTRIAL
MT41K512M16VRN-107AIT:P
Micron Technology's MT41K512M16VRN-107AIT:P is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and fast data processing.
AUTO/SELF REFRESH
934.57 MHz
4,8
R-PBGA-B96
e1
14 mm
DDR3L DRAM
16
96
536870912 words
512M
95 Cel
512MX16
TFBGA
BGA96,9X16,32
GRID ARRAY, THIN PROFILE, FINE PITCH
260
8192
AEC-Q100
1.2 mm
.022 Amp
1.283 V
304 mA
1.45 V
1.35
TIN SILVER COPPER
30
8 mm
MT46V32M16BN-6IT:FTR
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 2.5;
FOUR BANK PAGE BURST
.7 ns
R-PBGA-B60
12.5 mm
536870912 bit
DDR1 DRAM
60
33554432 words
32M
85 Cel
32MX16
TBGA
GRID ARRAY, THIN PROFILE
2.7 V
2.3 V
2.5
1 mm
MT61K512M32KPA-14:B
Micron Technology's MT61K512M32KPA-14:B is a GDDR6 DRAM with 512MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin-profile devices.
MULTI BANK PAGE BURST
AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V
R-PBGA-B180
17179869184 bit
GDDR6 DRAM
180
0 Cel
512MX32
BGA180,14X18,30
1.2875 V
1.2125 V
1.25
OTHER
.75 mm
12 mm
MT40A4G4DVN-075H:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.14 V;
DUAL BANK PAGE BURST
R-PBGA-B78
DDR4 DRAM
4
78
4294967296 words
4G
4GX4
BGA
GRID ARRAY
1.26 V
1.14 V
1.2
MT40A256M16LY-062E:F
Micron Technology's MT40A256M16LY-062E:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
13.5 mm
4294967296 bit
256MX16
7.5 mm
MT40A256M16LY-062EIT:F
Micron Technology's MT40A256M16LY-062EIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in thin profile devices.
3
MT40A256M16LY-075:F
Micron Technology's MT40A256M16LY-075:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
MT40A512M8SA-075:F
Micron Technology's MT40A512M8SA-075:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in a compact form factor.
11 mm
8
512MX8
MT40A1G16RC-062E:B
Micron Technology's MT40A1G16RC-062E:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in thin-profile devices.
13 mm
1073741824 words
1G
1GX16
Tin/Silver/Copper (Sn/Ag/Cu)
MT48LC8M16A2B4-6AXIT:L
Micron Technology's MT48LC8M16A2B4-6AXIT:L is a 8MX16 Synchronous DRAM with 134217728 bit memory density. It operates at 3.3V, has a peak reflow temp of 260°C, and offers a max access time of 5.4 ns. Ideal for industrial applications requiring high-speed and reliable memory performance.
5.4 ns
S-PBGA-B54
134217728 bit
SYNCHRONOUS DRAM
54
8388608 words
8M
8MX16
SQUARE
3.6 V
3 V
3.3
MT48LC8M16A2P-6AAAT:L
Micron Technology's MT48LC8M16A2P-6AAAT:L is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers a max access time of 5.4ns and supports self-refresh mode. Ideal for industrial applications requiring fast and reliable memory performance.
R-PDSO-G54
e3
22.22 mm
TSOP2
SMALL OUTLINE, THIN PROFILE
Matte Tin (Sn)
GULL WING
DUAL
10.16 mm
MT48LC8M16A2P-7EAIT:L
Micron Technology's MT48LC8M16A2P-7EAIT:L is a 3.3V, 8MX16 Synchronous DRAM with self-refresh capability. Operating in industrial temperature range (-40 to 85 °C), it offers fast access time of 5.4 ns and memory density of 134217728 bits. Ideal for applications requiring high-speed data processing and reliable memory storage in compact devices.
MTA4ATF51264HZ-2G6E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;
WD-MAX
R-XZMA-N260
69.6 mm
34359738368 bit
DDR DRAM MODULE
64
512MX64
UNSPECIFIED
DIMM
MICROELECTRONIC ASSEMBLY
30.13 mm
NO
NO LEAD
ZIG-ZAG
2.5 mm
MT4VDDT1664HY-335K1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
AUTO/SELF REFRESH; WD-MAX
167 MHz
R-XDMA-N200
67.6 mm
1073741824 bit
16777216 words
16M
70 Cel
16MX64
3-STATE
DIMM200,24
NOT SPECIFIED
Not Qualified
31.9 mm
DRAMs
1080 mA
COMMERCIAL
.6 mm
2.45 mm
AS4C512M16D3LA-10BCNTR
Alliance Memory
Alliance Memory's AS4C512M16D3LA-10BCNTR is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating from 0 to 95 °C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density in a compact form factor.
1.425 V
1.275 V
9 mm
AS4C512M16D3LA-10BCN
Alliance Memory's AS4C512M16D3LA-10BCN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating at synchronous mode with self-refresh capability. Ideal for applications requiring high memory density and fast access speeds in a compact GRID ARRAY package.
MT4LSDT1664AY-13ED1
SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Package Shape: RECTANGULAR; Access Mode: FOUR BANK PAGE BURST;
R-XDMA-N168
133.125 mm
SYNCHRONOUS DRAM MODULE
168
65 Cel
25.53 mm
1.27 mm
3.18 mm
MT48LC32M16A2TG-75:CTR
Micron Technology's MT48LC32M16A2TG-75:CTR is a 32MX16 Synchronous DRAM with 3.3V supply voltage, operating at 0-70°C. It features 33554432 words, 16-bit memory width, and 536870912 bit memory density. Ideal for applications requiring fast access time and synchronous operation.
e0
TIN LEAD
MT40A512M16JY-083EIT:BTR
Micron Technology's MT40A512M16JY-083EIT:BTR is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access mode like multi-bank page burst operations.
MT40A512M8SA-062EIT:F
Micron Technology's MT40A512M8SA-062EIT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access with its four-bank page burst access mode.
MT40A512M16LY-062EAUT:E
Micron Technology's MT40A512M16LY-062EAUT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and automotive temperature grade. Suitable for applications requiring high memory density and fast data access in automotive electronics.
AUTOMOTIVE
AS4C512M16D3LB-12BCN
Alliance Memory's AS4C512M16D3LB-12BCN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with low power consumption and common I/O type.
AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY
800 MHz
.06 Amp
470 mA
IS42S32800J-7BL-TR
Integrated Silicon Solution
IS42S32800J-7BL-TR by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a memory width of 32 bits, and offers a max access time of 5.4ns. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
R-PBGA-B90
268435456 bit
90
8MX32
10
MTA8ATF2G64HZ-3G2B1
137438953472 bit
2147483648 words
2G
2GX64
3.7 mm
MT41K512M8RH-125IT:ETR
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit;
10.5 mm
MT46V16M16TG-6TIT:FTR
Micron Technology's MT46V16M16TG-6TIT:FTR is a DDR1 DRAM with 16MX16 organization, operating at 2.5V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access time of 0.7 ns, and small outline thin profile package style.
R-PDSO-G66
66
16MX16
TSSOP
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
235
Tin/Lead (Sn/Pb)
.65 mm
MT48LC16M16A2P-7EIT:GTR
MT48LC16M16A2P-7EIT:GTR by Micron Technology is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a voltage of 3.3V and has an access time of 5.4 ns. This DRAM is commonly used in industrial applications that require high-speed and reliable memory storage.
MT48LC4M16A2B4-75IT:GTR
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 3 V;
67108864 bit
4194304 words
4M
4MX16
MTA36ASF8G72PZ-3G2B2
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;
R-XDMA-N288
133.35 mm
618475290624 bit
DDR4 DRAM MODULE
72
288
8589934592 words
8G
8GX72
31.4 mm
3.9 mm
MTA4ATF1G64HZ-3G2B1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; JESD-30 Code: R-XDMA-N260;
R-XDMA-N260
68719476736 bit
1GX64
MT41K512M16VRN-107IT:P
MT41K512M16VRN-107IT:P by Micron Technology is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and single bank page burst access mode.
MT48LC16M16A2F4-6A:GTR
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; No. of Functions: 1;
AUTO REFRESH
MT48LC16M16A2F4-6AIT:GTR
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Maximum Seated Height: 1 mm;
AS4C512M8D4-83BCN
Alliance Memory's AS4C512M8D4-83BCN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in compact devices.
1200 MHz
10.6 mm
BGA78,9X13,32
.04 Amp
187 mA
MT40A1G8SA-062EAAT:E
Micron Technology's MT40A1G8SA-062EAAT:E is a DDR4 DRAM with 1.2V supply, 1600MHz clock frequency, and 1GX8 organization. It operates synchronously in common I/O mode for automotive applications at temperatures ranging from -40 to 105°C.
1GX8
.02 Amp
195 mA
MT53D1024M32D4DT-046AAT:D
Micron Technology's MT53D1024M32D4DT-046AAT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or mobile devices.
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
2136.7 MHz
1GX32
.95 mm
MT53D1024M32D4DT-053AAT:D
Micron's MT53D1024M32D4DT-053AAT:D is a 1GX32 DDR4 DRAM with 32-bit memory width and 34359738368 bit density. It operates synchronously in grid array package style, suitable for high-performance computing applications.
X-PBGA-B
MT53E256M32D2DS-046AAT:B
Micron Technology's MT53E256M32D2DS-046AAT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a very thin profile package style with 200 terminals and supports synchronous operation. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
2133 MHz
MT53E768M32D4DT-046AAT:E
Micron Technology's MT53E768M32D4DT-046AAT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features a very thin profile, fine pitch package style and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast clock frequencies up to 1.17V.
25769803776 bit
805306368 words
768M
768MX32
BGA200,12X20,32/25
MT53E768M32D4DT-053AAT:E
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words: 805306368 words;
1866 MHz
MT40A512M16LY-062EAT:E
Micron Technology's MT40A512M16LY-062EAT:E is a DDR4 DRAM with 512MX16 organization and 8589934592 bit memory density. It operates at a voltage of 1.2V, has a temperature range of -40 to 105°C, and is suitable for industrial applications.
65536
MT40A1G8SA-062E:ETR
Micron Technology's MT40A1G8SA-062E:ETR is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in temperatures ranging from 0 to 95°C.
MT40A256M16LY-062E:FTR
MT40A256M16LY-062E:FTR by Micron Technology is a DDR4 DRAM with 256MX16 organization, operating at a max clock frequency of 1600 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.
.003 Amp
312 mA
MT40A2G4SA-062E:ETR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;
2GX4
MT40A2G8VA-062EIT:BTR
MT40A2G8VA-062EIT:BTR by Micron Technology is a DDR4 DRAM with 2GX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and fast access speed in a compact grid array package.
2GX8
MT40A4G4DVN-062H:ETR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Form: BALL;
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