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MTA18ASF2G72PDZ-3G2J3

Micron Technology

MTA18ASF2G72PDZ-3G2J3 by Micron Technology

Micron Technology's MTA18ASF2G72PDZ-3G2J3 is a DDR4 DRAM MODULE with 2GX72 organization, 1600 MHz clock frequency, and 154618822656 bit memory density. It operates synchronously at 1.2V and is ideal for high-performance computing applications requiring fast data processing.

Median Price

$78.620

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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eBay

USA . 85 parts In-Stock

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$29.000

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ebizpc.com

USA . 82 parts In-Stock

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$69.990

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Newegg

USA . 62 parts In-Stock

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$78.620

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Disctech

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$99.990

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directmacro.com

USA . 153 parts In-Stock

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$110.880

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Vyrian

USA . 3,494 parts In-Stock

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Digiode

USA . 2,251 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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Chip Stock

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AZTECH Wire

Italy . 1,023 parts In-Stock

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$12.680

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Ampacity Inc.

Singapore . 1,537 parts In-Stock

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$24.000

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Corphita

USA . 1,947 parts In-Stock

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Aranea Global

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Overview

Experience unparalleled performance and reliability with the MTA18ASF2G72PDZ-3G2J3 by Micron Technology. As a leading manufacturer in the industry, Micron's DDR4 DRAM MODULE offers cutting-edge technology and exceptional quality. Ideal for a variety of applications, this memory module provides seamless operation and fast data processing. With a nominal supply voltage of 1.2V and a maximum clock frequency of 1600 MHz, this product delivers superior performance while ensuring optimal energy efficiency. Trust Micron Technology to elevate your computing experience with the MTA18ASF2G72PDZ-3G2J3.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for efficient and compact packaging, making it easy to integrate into various electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for data to be transmitted at a predictable rate, enhancing overall system performance.

Self Refresh: YES

Self refresh capability helps in reducing power consumption and extending battery life in mobile devices.

Nominal Supply Voltage / Vsup (V): 1.2

Low nominal supply voltage of 1.2V results in energy efficiency and reduced heat generation.

No. of Terminals: 288

Having a higher number of terminals allows for increased data transfer rates and faster communication within the system.

Maximum Clock Frequency (fCLK): 1600 MHz

High maximum clock frequency enables faster data processing and improved overall system speed.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and reliable performance, making it an ideal choice for memory modules.

Memory IC Type: DDR4 DRAM MODULE

Being a DDR4 DRAM module, it offers improved data transfer rates and enhanced overall system efficiency compared to older DRAM technologies.

Technical Specifications

DRAM MTA18ASF2G72PDZ-3G2J3 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

Maximum Clock Frequency (fCLK):

1600 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-XDMA-N288

Length:

133.35 mm

Memory Density:

154618822656 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

288

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX72

Output Characteristics:

OPEN-DRAIN

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

DIMM288,33

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

31.55 mm

Self Refresh:

YES

Sequential Burst Length:

8

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MTA18ASF2G72PDZ-3G2J3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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