Loading...

MT40A4G8BAF-062E:B

Micron Technology

MT40A4G8BAF-062E:B by Micron Technology

Micron Technology's MT40A4G8BAF-062E:B is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a density of 34359738368 bits.

Median Price

$12.230

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$12.230

10k+ parts

-

2,000

-

-

$12.230

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Sensible Micro Corp

USA . 310,777 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

310,777

-

-

-

-

Vyrian

USA . 5,417 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,417

-

-

-

-

Chip Stock

USA . 5,090 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,090

-

-

-

-

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

750

-

-

-

-

Digiode

USA . 694 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

694

-

-

-

-

Rebound Electronics

UK . 65 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

65

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,890 parts In-Stock

1+ parts

$10.400

100+ parts

-

1k+ parts

-

10k+ parts

-

1,890

$10.400

-

-

-

AZTECH Wire

Italy . 481 parts In-Stock

1+ parts

$10.590

100+ parts

-

1k+ parts

-

10k+ parts

-

481

$10.590

-

-

-

GreenTree Electronics

Israel . 308,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

308,800

-

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Argo Parts USA

USA . 3,134 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,134

-

-

-

-

Continental Prestige Electronics

USA . 2,859 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,859

-

-

-

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Corphita

USA . 894 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

894

-

-

-

-

Microchip USA

USA . 173 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

173

-

-

-

-

Speed Components Ltd (Excess)

Israel . 59 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

59

-

-

-

-

Overview

Upgrade your device with the MT40A4G8BAF-062E:B by Micron Technology, a high-quality DDR4 DRAM that offers unparalleled performance and reliability. Micron Technology is a trusted manufacturer known for its cutting-edge technology and innovation in the industry. This memory module is perfect for a wide range of applications, from gaming to data processing, thanks to its fast operating mode and self-refresh capabilities. With a nominal supply voltage of 1.2V and a maximum clock frequency of 1600 MHz, this product provides exceptional value and efficiency for customers looking to enhance their system's speed and responsiveness. Experience the difference with Micron Technology's MT40A4G8BAF-062E:B.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protects the internal components of the DRAM, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability allows for easy and quick installation onto circuit boards, saving time and simplifying the assembly process.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transmitted and processed at a consistent and synchronized pace, leading to improved overall system performance.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at a nominal supply voltage of 1.2V helps in reducing power consumption and heat generation, making it energy-efficient.

Maximum Clock Frequency (fCLK): 1600 MHz

High maximum clock frequency of 1600 MHz allows for fast data transfer and processing speeds, enhancing the overall performance of the DRAM.

Memory IC Type: DDR4 DRAM

Being DDR4 DRAM, this product is the latest technology in memory modules, providing faster data transfer rates and improved multitasking capabilities.

Technical Specifications

DRAM MT40A4G8BAF-062E:B attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Clock Frequency (fCLK):

1600 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B78

JESD-609 Code:

e1

Length:

11 mm

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

78

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA78,9X11,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Current:

245 mA

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.5 mm

Trade Compliance

MT40A4G8BAF-062E:B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20