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MTA16ATF2G64AZ-3G2E1

Micron Technology

MTA16ATF2G64AZ-3G2E1 by Micron Technology

Micron Technology's MTA16ATF2G64AZ-3G2E1 is a 2GX64 DDR DRAM MODULE with 64-bit memory width and 137.4 Gb density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,979 parts In-Stock

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1,979

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Digiode

USA . 1,765 parts In-Stock

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1,765

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 1,085 parts In-Stock

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$18.710

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1,085

$18.710

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Corphita

USA . 167 parts In-Stock

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167

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Perfect Parts

USA . 112 parts In-Stock

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112

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Experience the ultimate in performance and reliability with the Micron Technology MTA16ATF2G64AZ-3G2E1 DDR DRAM module. Renowned for their cutting-edge technology and industry-leading quality, Micron Technology delivers superior memory solutions designed to meet the demands of today's fast-paced applications. Whether you're a gaming enthusiast, creative professional, or business user, this high-density memory module offers seamless multitasking, faster data access, and improved system responsiveness. Upgrade your system today and unlock new possibilities with Micron Technology.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration into different systems and devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate and efficient data transfer, improving overall system performance.

Self Refresh: YES

Self-refresh capability helps in reducing power consumption and prolonging battery life.

Nominal Supply Voltage / Vsup (V): 1.2

Nominal supply voltage of 1.2V is standard and widely compatible with various systems.

No. of Terminals: 288

Higher number of terminals allow for more data transfer and connectivity options.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly package style offers compact size and efficient heat dissipation.

Maximum Operating Temperature: 85 °C

High maximum operating temperature tolerance ensures reliability in harsh operating conditions.

Organization: 2GX64

Organized in 2GB x 64 configuration for optimal data storage and retrieval capabilities.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures stable performance even in cold environments.

Terminal Position: DUAL

Dual terminal position offers redundancy and reliability in data transmission.

Maximum Seated Height: 31.4 mm

Moderate maximum seated height allows for easy installation in various systems.

Width: 3.9 mm

Narrow width enables space-saving design and integration into tight spaces.

Minimum Supply Voltage (Vsup): 1.14 V

Low minimum supply voltage reduces power consumption and heat generation.

Length: 133.35 mm

Optimal length for accommodating the required memory capacity without being too bulky.

Access Mode: DUAL BANK PAGE BURST

Dual bank page burst access mode allows for faster data retrieval and processing.

Technology: CMOS

CMOS technology offers low power consumption and high speed data processing.

Terminal Form: NO LEAD

No lead terminal form is environmentally friendly and complies with RoHS regulations.

No. of Words: 2147483648 words

Large number of words for extensive data storage and processing capabilities.

Memory Width: 64

Memory width of 64 bits allows for efficient data transfer and processing.

No. of Words Code: 2G

2G words code indicates high memory capacity for intensive computing tasks.

Maximum Supply Voltage (Vsup): 1.26 V

Maximum supply voltage of 1.26V ensures stable operation without overloading the system.

Memory Density: 137438953472 bit

High memory density for storing a large amount of data and running multiple applications simultaneously.

Memory IC Type: DDR DRAM MODULE

DDR DRAM module type offers high-speed data transfer rates and efficient memory management.

Technical Specifications

DRAM MTA16ATF2G64AZ-3G2E1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XDMA-N288

Length:

133.35 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

288

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX64

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

31.4 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MTA16ATF2G64AZ-3G2E1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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