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AS4C16M32MS-7BCN

Alliance Memory

AS4C16M32MS-7BCN by Alliance Memory

Alliance Memory's AS4C16M32MS-7BCN is a 16MX32 Synchronous DRAM with 536870912-bit memory density. Operating at 1.8V, it offers a max access time of 5.4ns and features self-refresh capability. Ideal for applications requiring high-speed data storage in compact devices like smartphones and tablets.

Median Price

$4.581

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 87 parts In-Stock

1+ parts

$4.581

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87

$4.581

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VNN

France . 5,364 parts In-Stock

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5,364

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Vyrian

USA . 1,551 parts In-Stock

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1,551

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Kruse Electronics AG

Switzerland . 694 parts In-Stock

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694

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Kruse

Germany . 694 parts In-Stock

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694

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ARCO, INC.

USA . 600 parts In-Stock

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600

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AZTECH Wire

Italy . 607 parts In-Stock

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$7.929

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607

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Netroflash

USA . 1,000 parts In-Stock

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$4.489

1k+ parts

$4.351

10k+ parts

$4.260

1,000

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$4.489

$4.351

$4.260

Overview

Upgrade your electronic devices with the AS4C16M32MS-7BCN DRAM by Alliance Memory, a leading manufacturer known for top-quality products. This memory module offers reliable performance in various applications, thanks to its synchronous operation and self-refresh capabilities. With a nominal supply voltage of 1.8V and a maximum operating temperature of 85°C, this DRAM provides optimal functionality while maintaining energy efficiency. Trust Alliance Memory to deliver cutting-edge technology that enhances the speed and efficiency of your devices, making them more responsive and reliable. Elevate your electronics with the AS4C16M32MS-7BCN DRAM for seamless performance and superior quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product reliable for long-term use.

Surface Mount: YES

Being surface mountable makes installation and assembly easier and more efficient.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred efficiently and accurately within the system.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a standard voltage, ensuring compatibility with various systems and devices.

No. of Terminals: 90

Having a higher number of terminals allows for greater connectivity and data transfer capabilities.

Memory IC Type: SYNCHRONOUS DRAM

Being a Synchronous DRAM ensures high-speed performance and efficient data processing.

Technical Specifications

DRAM AS4C16M32MS-7BCN attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B90

Length:

13 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

90

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

1 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

AS4C16M32MS-7BCN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

PCN

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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