Loading...

OTHER DRAM 442

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MTA16ATF2G64HZ-3G2J1 by Micron Technology

MTA16ATF2G64HZ-3G2J1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N260

69.6 mm

137438953472 bit

DDR4 DRAM MODULE

64

1

1

260

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.7 mm

MTA4ATF51264AZ-3G2J1 by Micron Technology

MTA4ATF51264AZ-3G2J1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Interleaved Burst Length: 4,8;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1612.903 MHz

COMMON

4,8

R-XDMA-N288

133.35 mm

34359738368 bit

DDR4 DRAM MODULE

64

1

1

288

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

DIMM288,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

31.4 mm

YES

4,8

1.14 V

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

.6 mm

DUAL

NOT SPECIFIED

2.7 mm

MTA4ATF51264HZ-3G2J1 by Micron Technology

MTA4ATF51264HZ-3G2J1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Surface Mount: NO;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N260

69.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

260

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

2.5 mm

MTA8ATF1G64HZ-3G2J1 by Micron Technology

MTA8ATF1G64HZ-3G2J1

Micron Technology

Micron Technology's MTA8ATF1G64HZ-3G2J1 DDR DRAM MODULE features 1GX64 organization, 64-bit memory width, and 1073741824 words capacity. Operating in synchronous mode with self-refresh capability at a voltage range of 1.14V to 1.26V, it is ideal for applications requiring high-speed data processing and storage in microelectronic assemblies.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N260

69.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.7 mm

MT44K16M36RB-093F:B by Micron Technology

MT44K16M36RB-093F:B

Micron Technology

Micron Technology's MT44K16M36RB-093F:B is a DDR DRAM with 16MX36 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and a memory density of 603979776 bits. Ideal for applications requiring high-speed data processing in compact devices.

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K16M36RB-107E:B by Micron Technology

MT44K16M36RB-107E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Memory Density: 603979776 bit;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-093E:B by Micron Technology

MT44K32M18RB-093E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Operating Temperature: 0 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-093F:B by Micron Technology

MT44K32M18RB-093F:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Technology: CMOS;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-107E:B by Micron Technology

MT44K32M18RB-107E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT40A4G4DVN-062H:E by Micron Technology

MT40A4G4DVN-062H:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

BOTTOM

MT40A8G4CLU-062H:E by Micron Technology

MT40A8G4CLU-062H:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

MT40A8G4CLU-075H:E by Micron Technology

MT40A8G4CLU-075H:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

IS43QR16512A-083TBL by Integrated Silicon Solution

IS43QR16512A-083TBL

Integrated Silicon Solution

IS43QR16512A-083TBL by Integrated Silicon Solution is a 512MX16 DDR DRAM with 1200 MHz clock frequency, 1.2V supply voltage, and 95°C operating temperature. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in compact electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200 MHz

COMMON

4,8

R-PBGA-B96

14 mm

8589934592 bit

DDR DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

4,8

.025 Amp

353 mA

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10 mm

W632GG6NB-12 by Winbond Electronics

W632GG6NB-12

Winbond Electronics

The Winbond Electronics W632GG6NB-12 is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style with very thin profile and fine pitch, suitable for synchronous multi-bank page burst applications. With a memory density of 2147483648 bits and 16-bit memory width, it offers high performance in compact dimensions.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

2147483648 bit

DDR3 DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

95 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

IS43QR16256B-083RBL by Integrated Silicon Solution

IS43QR16256B-083RBL

Integrated Silicon Solution

IS43QR16256B-083RBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1200.48 MHz clock frequency, 95°C operating temp, and 1.2mm seated height. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

1200.48 MHz

COMMON

8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

8

.058 Amp

1.14 V

375 mA

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

MTA9ASF2G72PZ-3G2B1 by Micron Technology

MTA9ASF2G72PZ-3G2B1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA18ASF2G72PZ-3G2J3 by Micron Technology

MTA18ASF2G72PZ-3G2J3

Micron Technology

Micron Technology's MTA18ASF2G72PZ-3G2J3 is a DDR4 DRAM MODULE with 2GX72 organization, operating at up to 1600 MHz clock frequency. It features a memory density of 154618822656 bits and is suitable for applications requiring high-speed synchronous memory access in servers or data centers.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

1600 MHz

COMMON

8

R-XDMA-N288

133.35 mm

154618822656 bit

DDR4 DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX72

OPEN-DRAIN

UNSPECIFIED

DIMM

DIMM288,33

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

8

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA9ASF1G72PZ-3G2J3 by Micron Technology

MTA9ASF1G72PZ-3G2J3

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

AS4C256M16D4-75BCN by Alliance Memory

AS4C256M16D4-75BCN

Alliance Memory

Alliance Memory's AS4C256M16D4-75BCN is a 256MX16 DDR4 DRAM with 1333 MHz clock frequency, 95°C max temp, and 1.2V nominal supply. Ideal for applications requiring high-speed synchronous operation in compact electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333 MHz

COMMON

8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

8

.044 Amp

235 mA

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

AS4C512M8D4-75BCN by Alliance Memory

AS4C512M8D4-75BCN

Alliance Memory

Alliance Memory's AS4C512M8D4-75BCN is a 512MX8 DDR4 DRAM with 1333 MHz clock frequency, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in compact electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333 MHz

COMMON

8

R-PBGA-B78

10.6 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

8

.044 Amp

196 mA

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MTA16ATF4G64AZ-3G2B1 by Micron Technology

MTA16ATF4G64AZ-3G2B1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

DUAL BANK PAGE BURST

R-XDMA-N288

274877906944 bit

DDR4 DRAM MODULE

64

1

1

288

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

OTHER

NO LEAD

DUAL

MTA36ASF8G72PZ-2G9B1 by Micron Technology

MTA36ASF8G72PZ-2G9B1

Micron Technology

DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

DUAL BANK PAGE BURST

R-XDMA-N288

618475290624 bit

DRAM MODULE

72

1

1

288

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

OTHER

NO LEAD

DUAL

MTA4ATF1G64AZ-3G2B1 by Micron Technology

MTA4ATF1G64AZ-3G2B1

Micron Technology

DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words: 1073741824 words;

SINGLE BANK PAGE BURST

R-XDMA-N288

68719476736 bit

DDR4 DRAM MODULE

64

1

1

288

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

OTHER

NO LEAD

DUAL

IS43QR16256B-075UBL by Integrated Silicon Solution

IS43QR16256B-075UBL

Integrated Silicon Solution

IS43QR16256B-075UBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1333.33 MHz clock frequency, suitable for applications requiring high-speed memory access. It operates synchronously at 1.2V and features dual bank page burst access mode, making it ideal for systems demanding efficient data processing. The package style is grid array with thin profile and fine pitch, facilitating compact design integration.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

1333.33 MHz

COMMON

8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

8

.062 Amp

1.14 V

385 mA

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

IS43QR16512A-075VBL by Integrated Silicon Solution

IS43QR16512A-075VBL

Integrated Silicon Solution

IS43QR16512A-075VBL by Integrated Silicon Solution is a 512MX16 DDR4 DRAM with 1333 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333 MHz

COMMON

4,8

R-PBGA-B96

14 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

4,8

.025 Amp

375 mA

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

10 mm

MT41K512M8DA-093:PTR by Micron Technology

MT41K512M8DA-093:PTR

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

1066 MHz

COMMON

8

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

8

.012 Amp

150 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT44K16M36RB-093E:BTR by Micron Technology

MT44K16M36RB-093E:BTR

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Package Equivalence Code: BGA168,13X13,40;

MULTI BANK PAGE BURST

1075 MHz

COMMON

2,4

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR3 DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

100 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

2,4

.225 Amp

2840 mA

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

13.5 mm

MT40A1G16KNR-075:ETR by Micron Technology

MT40A1G16KNR-075:ETR

Micron Technology

MT40A1G16KNR-075:ETR by Micron Technology is a DDR4 DRAM with 1GX16 organization, operating at a max clock frequency of 1333 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.

SINGLE BANK PAGE BURST

1333 MHz

COMMON

R-PBGA-B96

13.5 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

.036 Amp

360 mA

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT40A1G16KD-062E:E by Micron Technology

MT40A1G16KD-062E:E

Micron Technology

Micron Technology's MT40A1G16KD-062E:E is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package, synchronous operation, and self-refresh capability. Ideal for applications requiring high-speed memory performance in compact form factors.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

e1

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.14 V

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT40A1G4HX-083E:A by Micron Technology

MT40A1G4HX-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 9 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR4 DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A1G4HX-093E:A by Micron Technology

MT40A1G4HX-093E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR4 DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A512M8HX-083E:A by Micron Technology

MT40A512M8HX-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A512M8HX-093E:A by Micron Technology

MT40A512M8HX-093E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 9 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K1G4RG-107:N by Micron Technology

MT41K1G4RG-107:N

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.6 mm

4294967296 bit

DDR3L DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT41K256M16LY-107:N by Micron Technology

MT41K256M16LY-107:N

Micron Technology

Micron Technology's MT41K256M16LY-107:N is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and tablets.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13.5 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT41K512M8RG-093:N by Micron Technology

MT41K512M8RG-093:N

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.6 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT41K512M8RG-107:N by Micron Technology

MT41K512M8RG-107:N

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.6 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

MT46H128M32L2KQ-48WT:C by Micron Technology

MT46H128M32L2KQ-48WT:C

Micron Technology

LPDDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Technology: CMOS;

FOUR BANK PAGE BURST

4.8 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-25 Cel

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MTA18ASF1G72AZ-2G1A1 by Micron Technology

MTA18ASF1G72AZ-2G1A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

288

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA16ATF1G64HZ-2G1A2 by Micron Technology

MTA16ATF1G64HZ-2G1A2

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words Code: 1G;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N260

69.6 mm

68719476736 bit

DDR DRAM MODULE

64

1

1

260

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.13 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

ZIG-ZAG

3.7 mm

MTA36ADS2G72PZ-2G1A1 by Micron Technology

MTA36ADS2G72PZ-2G1A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Access Mode: DUAL BANK PAGE BURST;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

288

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MTA72ASS4G72LZ-2G1A1 by Micron Technology

MTA72ASS4G72LZ-2G1A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 133.35 mm;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N288

133.35 mm

309237645312 bit

DDR DRAM MODULE

72

1

1

288

4294967296 words

4G

SYNCHRONOUS

85 Cel

0 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.4 mm

YES

1.26 V

1.14 V

1.2

NO

CMOS

OTHER

NO LEAD

DUAL

3.9 mm

MT41K1G8SN-107:A by Micron Technology

MT41K1G8SN-107:A

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K1G8SN-125:A by Micron Technology

MT41K1G8SN-125:A

Micron Technology

Micron Technology's MT41K1G8SN-125:A is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 8589934592 bits. Ideal for applications requiring high-speed data processing in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT41K2G4SN-125:A by Micron Technology

MT41K2G4SN-125:A

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K512M16HA-107:A by Micron Technology

MT41K512M16HA-107:A

Micron Technology

Micron Technology's MT41K512M16HA-107:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT41K512M16HA-125:A by Micron Technology

MT41K512M16HA-125:A

Micron Technology

Micron Technology's MT41K512M16HA-125:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

EDF8132A3MA-JD-F-D by Micron Technology

EDF8132A3MA-JD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 178; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B178

e1

11.5 mm

8589934592 bit

LPDDR3 DRAM

32

1

1

178

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX32

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

.85 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10.5 mm