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OTHER DRAM 442

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT47R128M8CF-3:H by Micron Technology

MT47R128M8CF-3:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

450 ns

SELF CONTAINED REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

1.55

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.5 V

1.55

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47R256M4CF-3:H by Micron Technology

MT47R256M4CF-3:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

450 ns

SELF CONTAINED REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

1073741824 bit

DDR2 DRAM

4

1

1

60

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

1.55

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.5 V

1.55

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47R64M16HR-3:H by Micron Technology

MT47R64M16HR-3:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

450 ns

SELF CONTAINED REFRESH

333 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY

1.55

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

1.9 V

1.5 V

1.55

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT42L128M64D4KJ-25IT:A by Micron Technology

MT42L128M64D4KJ-25IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Minimum Operating Temperature: -25 Cel;

MULTI BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

S-PBGA-B216

e1

12 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

216

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.4 mm

BOTTOM

30

12 mm

MT41J512M4HX-15E:D by Micron Technology

MT41J512M4HX-15E:D

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.255 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B78

11.5 mm

2147483648 bit

DDR3 DRAM

4

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

385 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT42L128M64D4LC-3IT:A by Micron Technology

MT42L128M64D4LC-3IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: VFBGA; Package Shape: SQUARE; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B240

14 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

240

134217728 words

128M

SYNCHRONOUS

85 Cel

-25 Cel

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

14 mm

MT42L64M64D2MC-3IT:A by Micron Technology

MT42L64M64D2MC-3IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: VFBGA; Package Shape: SQUARE; Self Refresh: YES;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B240

14 mm

4294967296 bit

LPDDR2 DRAM

64

1

1

240

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

14 mm

MT41K512M4DA-125:K by Micron Technology

MT41K512M4DA-125:K

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3L DRAM

4

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

156 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

8 mm

MT41K512M4DA-125:M by Micron Technology

MT41K512M4DA-125:M

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3L DRAM

4

1

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41K1G4RH-125:E by Micron Technology

MT41K1G4RH-125:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3L DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT42L64M32D1KL-3IT:A by Micron Technology

MT42L64M32D1KL-3IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Words: 67108864 words;

MULTI BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

e1

12 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

MT49H64M9CBM-25E:B by Micron Technology

MT49H64M9CBM-25E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

9

1

1

144

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT41J128M16JT-107:K by Micron Technology

MT41J128M16JT-107:K

Micron Technology

Micron Technology's MT41J128M16JT-107:K is a DDR3 DRAM with 128MX16 organization, operating at 933 MHz. It features a 1.5V supply voltage and offers 134217728 words of memory. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

.195 ns

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

2147483648 bit

DDR3 DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

226 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J256M8DA-093:K by Micron Technology

MT41J256M8DA-093:K

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.18 ns

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3 DRAM

8

3

1

1

78

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

171 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

.8 mm

BOTTOM

30

8 mm

MT41J256M8DA-107:K by Micron Technology

MT41J256M8DA-107:K

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.195 ns

AUTO/SELF REFRESH

1066 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3 DRAM

8

1

1

78

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

190 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J512M4HX-125:D by Micron Technology

MT41J512M4HX-125:D

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

11.5 mm

2147483648 bit

DDR3 DRAM

4

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

435 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41J512M4HX-187E:D by Micron Technology

MT41J512M4HX-187E:D

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.3 ns

AUTO/SELF REFRESH

533 MHz

COMMON

8

R-PBGA-B78

11.5 mm

2147483648 bit

DDR3 DRAM

4

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

335 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K256M16HA-125M:E by Micron Technology

MT41K256M16HA-125M:E

Micron Technology

Micron Technology's MT41K256M16HA-125M:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features a thin profile grid array package and consumes up to 239 mA at 1.35V. Ideal for applications requiring high-speed synchronous memory with low power consumption.

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

239 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41K512M8RH-125M:E by Micron Technology

MT41K512M8RH-125M:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

213 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT46H128M16LFB7-5WT:B by Micron Technology

MT46H128M16LFB7-5WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

S-PBGA-B60

10 mm

2147483648 bit

DDR1 DRAM

16

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

-20 Cel

128MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

130 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

10 mm

MT46H128M16LFB7-6WT:B by Micron Technology

MT46H128M16LFB7-6WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

S-PBGA-B60

10 mm

2147483648 bit

DDR1 DRAM

16

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

-20 Cel

128MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

115 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

10 mm

MT46H128M32L2KQ-5WT:B by Micron Technology

MT46H128M32L2KQ-5WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

4294967296 bit

DDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-20 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

.75 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

12 mm

MT46H128M32L2KQ-6WT:B by Micron Technology

MT46H128M32L2KQ-6WT:B

Micron Technology

Micron Technology's MT46H128M32L2KQ-6WT:B is a DDR1 DRAM with 128MX32 organization, operating at 166 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like smartphones and tablets.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

4294967296 bit

DDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-20 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.75 mm

YES

2,4,8,16

.00001 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

12 mm

MT46H128M32L2MC-6WT:B by Micron Technology

MT46H128M32L2MC-6WT:B

Micron Technology

Micron Technology's MT46H128M32L2MC-6WT:B is a 128MX32 DDR1 DRAM with 240 terminals and operates at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

S-PBGA-B240

e1

14 mm

4294967296 bit

DDR1 DRAM

32

1

1

240

134217728 words

128M

SYNCHRONOUS

85 Cel

-20 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA240,27X27,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.8 mm

YES

2,4,8,16

.00001 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

14 mm

MT46H64M32LFCX-5WT:B by Micron Technology

MT46H64M32LFCX-5WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

2147483648 bit

DDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-20 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

9 mm

MT46H64M32LFCX-6WT:B by Micron Technology

MT46H64M32LFCX-6WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

2147483648 bit

DDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-20 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

9 mm

MT46H64M32LFMA-5WT:B by Micron Technology

MT46H64M32LFMA-5WT:B

Micron Technology

Micron Technology's MT46H64M32LFMA-5WT:B is a DDR1 DRAM with 64MX32 organization, operating at 200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

2147483648 bit

DDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-20 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.7 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

12 mm

MT4HTF3264HZ-800G1 by Micron Technology

MT4HTF3264HZ-800G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

R-PDMA-N200

e3

67.6 mm

536870912 bit

DDR DRAM MODULE

16

1

1

1

200

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.028 Amp

DRAMs

1480 mA

3.6 V

1.7 V

1.8

NO

CMOS

OTHER

MATTE TIN

NO LEAD

.6 mm

DUAL

2.45 mm

MT47H512M8WTR-3:C by Micron Technology

MT47H512M8WTR-3:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

COMMON

R-PBGA-B63

e3

4294967296 bit

DDR2 DRAM

8

1

63

536870912 words

512M

85 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

FBGA

BGA63,9X11,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1.8

Not Qualified

8192

DRAMs

1.8

YES

CMOS

OTHER

MATTE TIN

BALL

.8 mm

BOTTOM

MT41K1G8THE-15E:D by Micron Technology

MT41K1G8THE-15E:D

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

12 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

10.5 mm

MT41K1G8TRF-125:E by Micron Technology

MT41K1G8TRF-125:E

Micron Technology

MT41K1G8TRF-125:E by Micron Technology is a DDR3L DRAM with 1GX8 organization, operating at 800 MHz. It features a thin profile grid array package and consumes up to 243 mA of current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

DUAL BANK PAGE BURST

.225 ns

SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e0

11.5 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.036 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

9.5 mm

MT41K2G4TRF-125:E by Micron Technology

MT41K2G4TRF-125:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.225 ns

SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

11.5 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.036 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9.5 mm

MT41K512M8RH-125:E by Micron Technology

MT41K512M8RH-125:E

Micron Technology

Micron Technology's MT41K512M8RH-125:E is a DDR3L DRAM with 512MX8 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like smartphones and tablets.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3L DRAM

8

3

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

.8 mm

BOTTOM

30

9 mm

MT41K256M16HA-125:E by Micron Technology

MT41K256M16HA-125:E

Micron Technology

Micron Technology's MT41K256M16HA-125:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and a low supply voltage of 1.35V. Ideal for applications requiring high-speed memory access in compact electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

.8 mm

BOTTOM

30

9 mm

MT47R128M8CF-25:H by Micron Technology

MT47R128M8CF-25:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B60

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.9 V

1.5 V

1.55

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT47R256M4CF-25E:H by Micron Technology

MT47R256M4CF-25E:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B60

10 mm

1073741824 bit

DDR2 DRAM

4

1

1

60

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.9 V

1.5 V

1.55

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm

MT47R64M16HR-25:H by Micron Technology

MT47R64M16HR-25:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Width: 16;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B84

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.9 V

1.5 V

1.55

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm

MT47R64M16HR-25E:H by Micron Technology

MT47R64M16HR-25E:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B84

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.9 V

1.5 V

1.55

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm

MT42L128M32D1GU-25WT:A by Micron Technology

MT42L128M32D1GU-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 134; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

5.5 ns

SELF CONTAINED REFRESH; ALSO OPERATES AT MINIMUM 1.7 V

400 MHz

COMMON

4,8,16

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA134,10X17,25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.7 mm

YES

4,8,16

.0001 Amp

DRAMs

194 mA

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

UPD48288118AFF-E24-DW1-A by Renesas Electronics

UPD48288118AFF-E24-DW1-A

Renesas Electronics

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

e6

18.5 mm

301989888 bit

DDR1 DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.8,2.5

Not Qualified

1.17 mm

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN BISMUTH

BALL

1 mm

BOTTOM

11 mm

UPD48288118AFF-E24-DW1 by Renesas Electronics

UPD48288118AFF-E24-DW1

Renesas Electronics

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 16777216 words;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR1 DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.8,2.5

Not Qualified

1.17 mm

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT41K256M16HA-125IT:E by Micron Technology

MT41K256M16HA-125IT:E

Micron Technology

Micron Technology's MT41K256M16HA-125IT:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and offers 4294967296 bits memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT41K1G4THD-15E:D by Micron Technology

MT41K1G4THD-15E:D

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR3L DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K1G4THD-187E:D by Micron Technology

MT41K1G4THD-187E:D

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR3L DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K1G4THV-125:M by Micron Technology

MT41K1G4THV-125:M

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR3L DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm

MT41K1G4THV-15E:M by Micron Technology

MT41K1G4THV-15E:M

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 1G;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR3L DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm

MT41K512M8THD-15E:D by Micron Technology

MT41K512M8THD-15E:D

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Organization: 512MX8;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

11.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT47H128M4CF-187E:G by Micron Technology

MT47H128M4CF-187E:G

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

FOUR BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

10 mm

536870912 bit

DDR2 DRAM

4

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm