Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Operating Temperature: 0 Cel;
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Microchip USA
DRAM MT44K32M18RB-093E:B attributes and parameters. Explore more DRAM devices from Micron Technology
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MT44K32M18RB-093E:B Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.32
SB
8542.32.00.15
PCN Obsolescence/ EOL - DK OBS NOTICE
PCN Assembly/Origin - Tray Pkg Label Chgs 8/Oct/2020
PCN Packaging - Mult Devices 22/Feb/2018 Standard Pkg Label Chg 20/Feb/2019
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
MC7805CTG
Onsemi
MC7805CTG by Onsemi is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation. The package style is flange mount with through-hole terminals, ensuring easy installation and reliability in diverse electronic designs.
ERJ2RKF1002X
Panasonic
Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.
1N4148WT-7
Diodes Incorporated
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
1N4148WS
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM2931AZ-5.0RAG
LM2931AZ-5.0RAG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage, 0.1A max output current, and 0.6V max dropout voltage. Ideal for applications requiring stable voltage regulation in temperature-sensitive environments up to 150°C.
MBRS3200T3G
MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.
IRLML6402TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
SMMBT2222ALT1G
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
Lite-on Semiconductor
SS14
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
New England Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Comset Semiconductors
BAV99
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Space Power Electronics
SMBJ18CA
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
Cheng-yi Electronic
1N4148
Wuxi Xuyang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
OHN3020U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
BSS138
Vishay Intertechnology
Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.
1554216002
Molex
WIRE AND CABLE;
M471B2873FHS-CH9
Samsung
Samsung's M471B2873FHS-CH9 DDR DRAM MODULE offers 128MX64 organization, 1.5V nominal voltage, and operates in synchronous mode. Ideal for applications requiring high memory density and fast access times with a temperature range of 0-95°C.
KVR16LS11/4
Kingston Technology Company
Kingston's KVR16LS11/4 DDR DRAM MODULE features 512MX64 organization, 1.35V supply voltage, and 64-bit memory width. Ideal for applications requiring synchronous operation in microelectronic assemblies with a max operating temperature of 85°C.
MT40A1G16HBA-083E:A
Micron Technology
Micron Technology's MT40A1G16HBA-083E:A is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
AS4C32M16D2A-25BCN
Alliance Memory
Alliance Memory's AS4C32M16D2A-25BCN is a 32MX16 Synchronous DRAM with 536870912-bit memory density. Operating at 1.8V, it offers fast access time of 0.4ns and features self-refresh mode. Ideal for applications requiring high-speed data processing in compact devices.
MT41K256M16HA-125XIT:E
Micron Technology's MT41K256M16HA-125XIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in grid array package style.
MT40A2G8SA-062E:F
Micron Technology's MT40A2G8SA-062E:F is a DDR4 DRAM with 2GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O.
S70KS1282GABHV020
Infineon Technologies
Infineon's S70KS1282GABHV020 is a 16MX8 DRAM with 200 MHz clock frequency, 1.8V supply voltage, and 105°C operating temp. Ideal for applications requiring high-speed synchronous memory in compact devices due to its low profile grid array package and common I/O type.
IS42S32160D-7BLI
Integrated Silicon Solution
IS42S32160D-7BLI by Integrated Silicon Solution is a 16MX32 SYNCHRONOUS DRAM with 3.3V supply, operating at 143 MHz clock frequency. Ideal for INDUSTRIAL applications, it features FOUR BANK PAGE BURST access mode and offers a memory density of 536870912 bit.
MT47H128M16RT-25E:CTR
Micron Technology's MT47H128M16RT-25E:CTR is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Suitable for applications requiring high memory density and fast access times in a compact package.
MT41J128M16JT-125:KTR
Micron Technology's MT41J128M16JT-125:KTR is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory density of 2Gb. Ideal for applications requiring high-speed data processing in devices like computers and servers.
MTA18ASF2G72PZ-3G2J3
Micron Technology's MTA18ASF2G72PZ-3G2J3 is a DDR4 DRAM MODULE with 2GX72 organization, operating at up to 1600 MHz clock frequency. It features a memory density of 154618822656 bits and is suitable for applications requiring high-speed synchronous memory access in servers or data centers.
MT48LC4M32B2B5-6AAAT:L
Micron Technology's MT48LC4M32B2B5-6AAAT:L is a 4MX32 Synchronous DRAM with 32-bit memory width. Operating at 3.3V, it offers a max access time of 5.4ns and self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package style.
TC511000BFTL-70
Toshiba
Toshiba's TC511000BFTL-70 is a 1MX1 DRAM with 1048576-bit memory density. It operates at 5V, has FAST PAGE access mode with 70ns max access time. Ideal for applications requiring high-speed data storage in compact devices due to its small outline, thin profile package style.
AS4C1G8MD3L-12BCNTR
Alliance Memory's AS4C1G8MD3L-12BCNTR is a DDR3L DRAM with 1GX8 organization, operating at up to 800 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
AS4C1G8MD3L-12BCN
Alliance Memory's AS4C1G8MD3L-12BCN is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. Featuring synchronous operation and self-refresh capability, it offers 1073741824 words of memory with a width of 8 bits. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.
MT48LC4M32B2P-6:G
Micron Technology's MT48LC4M32B2P-6:G is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density in a small outline package.
K4B1G1646G-BCMA
Samsung's K4B1G1646G-BCMA DDR3 DRAM features 64MX16 organization, 933 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max standby current of 0.01 Amp.
MT48LC8M16A2P-6AIT:LTR
Micron Technology's MT48LC8M16A2P-6AIT:LTR is a 3.3V, 8MX16 CMOS Synchronous DRAM with 8388608 words and 134217728 bit memory density. It operates in industrial temperature range (-40 to 85 °C) with self-refresh capability. Ideal for applications requiring fast access time (5.4 ns) and four bank page burst access mode.
MT40A1G16KH-062EAAT:E
Micron Technology's MT40A1G16KH-062EAAT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for automotive applications due to AEC-Q100 screening level and wide temperature range (-40 to 105°C).
MT47H64M16HR-3:HTR
Micron Technology's MT47H64M16HR-3:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in a compact grid array package.
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MT44K16M36RB-093:A
Micron Technology's MT44K16M36RB-093:A is a DDR DRAM with 16MX36 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
MT44K32M36RB-093E:A
DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Access Mode: MULTI BANK PAGE BURST; Technology: CMOS;
MT44K16M36PA-125FIT:A
DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Seated Height: 1.2 mm; Length: 13.5 mm;
MT44H8M32F2FW-18
DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 135; Package Code: TFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
MT44K16M36PA-107:A
DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Words Code: 16M; JESD-30 Code: S-PBGA-B168;
MT44K16M36PA-125EIT:A
DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Seated Height: 1.2 mm; Maximum Supply Voltage (Vsup): 1.42 V;
MT44K16M36PA-093EIT:A
DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Functions: 1; Operating Mode: SYNCHRONOUS;
MT44K16M36PA-125IT:A
DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; Terminal Position: BOTTOM;
MT44H8M32F1FW-18
MT44K16M36PA-107E:A
DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Length: 13.5 mm; Nominal Supply Voltage / Vsup (V): 1.35;
MT44H8M32F2FW-2
MT44K16M36PA-107EIT:A
DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Functions: 1; Memory Density: 603979776 bit;
MT44K16M36PA-125E:A
DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Length: 13.5 mm; Package Style (Meter): GRID ARRAY, THIN PROFILE;
MT44K16M36PA-093E:A
DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Terminal Pitch: 1 mm; Terminal Form: BALL;
MT44K16M36PA-125F:A
DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Functions: 1; Minimum Supply Voltage (Vsup): 1.28 V;
MT44H8M32F2FW-16
MT44K16M36PA-107IT:A
DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Self Refresh: YES; No. of Functions: 1;
MT44K16M36PA-093IT:A
DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Technology: CMOS; Nominal Supply Voltage / Vsup (V): 1.35;
MT44H8M32F1FW-16
MT44H8M32F1FW-2
Supply Digital Components
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