Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MT40A256M16LY-062E:F
Micron Technology
Micron Technology's MT40A256M16LY-062E:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
DUAL BANK PAGE BURST
AUTO/SELF REFRESH
R-PBGA-B96
e1
13.5 mm
4294967296 bit
DDR4 DRAM
16
1
96
268435456 words
256M
SYNCHRONOUS
95 Cel
0 Cel
256MX16
PLASTIC/EPOXY
TFBGA
RECTANGULAR
GRID ARRAY, THIN PROFILE, FINE PITCH
260
1.2 mm
YES
1.26 V
1.14 V
1.2
CMOS
OTHER
TIN SILVER COPPER
BALL
.8 mm
BOTTOM
30
7.5 mm
MT40A256M16LY-075:F
Micron Technology's MT40A256M16LY-075:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
MT40A512M8SA-075:F
Micron Technology's MT40A512M8SA-075:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in a compact form factor.
FOUR BANK PAGE BURST
R-PBGA-B78
11 mm
8
78
536870912 words
512M
512MX8
MT40A1G16RC-062E:B
Micron Technology's MT40A1G16RC-062E:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in thin-profile devices.
MULTI BANK PAGE BURST
1600 MHz
COMMON
13 mm
17179869184 bit
1073741824 words
1G
1GX16
BGA96,9X16,32
8192
Tin/Silver/Copper (Sn/Ag/Cu)
10 mm
MTA4ATF51264HZ-2G6E1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;
SINGLE BANK PAGE BURST
WD-MAX
R-XZMA-N260
69.6 mm
34359738368 bit
DDR DRAM MODULE
64
512MX64
UNSPECIFIED
DIMM
MICROELECTRONIC ASSEMBLY
30.13 mm
NO
NO LEAD
ZIG-ZAG
2.5 mm
AS4C512M16D3LA-10BCNTR
Alliance Memory
Alliance Memory's AS4C512M16D3LA-10BCNTR is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating from 0 to 95 °C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density in a compact form factor.
8589934592 bit
3
512MX16
1.425 V
1.275 V
1.35
9 mm
AS4C512M16D3LA-10BCN
Alliance Memory's AS4C512M16D3LA-10BCN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating at synchronous mode with self-refresh capability. Ideal for applications requiring high memory density and fast access speeds in a compact GRID ARRAY package.
AS4C512M16D3LB-12BCN
Alliance Memory's AS4C512M16D3LB-12BCN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with low power consumption and common I/O type.
AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY
800 MHz
DDR3L DRAM
3-STATE
.06 Amp
470 mA
1.45 V
1.283 V
MTA8ATF2G64HZ-3G2B1
AUTO/SELF REFRESH; WD-MAX
137438953472 bit
2147483648 words
2G
2GX64
3.7 mm
MTA36ASF8G72PZ-3G2B2
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;
R-XDMA-N288
133.35 mm
618475290624 bit
DDR4 DRAM MODULE
72
288
8589934592 words
8G
8GX72
31.4 mm
DUAL
3.9 mm
MTA4ATF1G64HZ-3G2B1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; JESD-30 Code: R-XDMA-N260;
R-XDMA-N260
68719476736 bit
1GX64
MT40A1G8SA-062E:ETR
Micron Technology's MT40A1G8SA-062E:ETR is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in temperatures ranging from 0 to 95°C.
1GX8
MT40A256M16LY-062E:FTR
MT40A256M16LY-062E:FTR by Micron Technology is a DDR4 DRAM with 256MX16 organization, operating at a max clock frequency of 1600 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.
.003 Amp
312 mA
MT40A2G4SA-062E:ETR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;
4
2GX4
MT40A4G4DVN-062H:ETR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Form: BALL;
4294967296 words
4G
4GX4
BGA
GRID ARRAY
MT40A512M16JY-062E:BTR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;
14 mm
8 mm
MT40A8G4CLU-062H:ETR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;
8GX4
MT40A8G4CLU-075H:ETR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS;
MT41K256M8DA-107:KTR
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;
10.5 mm
2147483648 bit
256MX8
MT41K512M4DA-125:KTR
Micron Technology's MT41K512M4DA-125:KTR is a DDR3L DRAM with 512MX4 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and tablets.
512MX4
MT44K32M36RB-083F:ATR
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Operating Temperature: 0 Cel;
AUTO REFRESH
S-PBGA-B168
1207959552 bit
DDR DRAM
36
168
33554432 words
32M
32MX36
TBGA
SQUARE
GRID ARRAY, THIN PROFILE
1.42 V
1.28 V
1 mm
MT49H16M36SJ-18:BTR
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;
AUTO REFRESH; TERM PITCH-MAX
R-PBGA-B144
18.5 mm
603979776 bit
144
16777216 words
16M
16MX36
1.9 V
1.7 V
1.8
MT49H16M36SJ-25E:BTR
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;
MT49H8M36SJ-25E:BTR
DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;
301989888 bit
8388608 words
8M
8MX36
MTA9ASF1G72PZ-3G2E2
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 72;
1612 MHz
77309411328 bit
1GX72
OPEN-DRAIN
DIMM288,33
31.55 mm
.198 Amp
1710 mA
MTA16ATF2G64HZ-2G1B1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Shape: RECTANGULAR; No. of Functions: 1; Maximum Operating Temperature: 95 Cel;
MTA16ATF2G64HZ-2G6E1
Micron Technology's MTA16ATF2G64HZ-2G6E1 is a DDR DRAM MODULE with 2GX64 organization, 64-bit memory width, and 137.4 Gb memory density. It operates synchronously at 1.2V and features self-refresh capability. Ideal for applications requiring high-speed data processing in compact systems.
AS4C1G8MD3L-12BCNTR
Alliance Memory's AS4C1G8MD3L-12BCNTR is a DDR3L DRAM with 1GX8 organization, operating at up to 800 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
4,8
13.2 mm
BGA78,9X13,32
.011 Amp
125 mA
AS4C512M16D3L-12BCNTR
Alliance Memory's AS4C512M16D3L-12BCNTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. Featuring synchronous mode and self-refresh capability, it has a thin profile grid array package suitable for applications requiring high-speed memory access and low power consumption.
185 mA
AS4C64M16D2A-25BCNTR
Alliance Memory's AS4C64M16D2A-25BCNTR is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
.4 ns
400 MHz
R-PBGA-B84
12.5 mm
1073741824 bit
DDR2 DRAM
84
67108864 words
64M
85 Cel
64MX16
BGA84,9X15,32
.01 Amp
170 mA
MTA8ATF2G64HZ-3G2E1
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 64;
MT52L256M64D2PP-107WT:B
LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Organization: 256MX64;
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
CONFIGURABLE
S-PBGA-B216
12 mm
LPDDR3 DRAM
216
-30 Cel
256MX64
VFBGA
BGA216,12X12,16
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
1.3 V
.4 mm
MT40A2G8VA-062E:B
Micron Technology's MT40A2G8VA-062E:B is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data processing in devices like servers and high-performance computers.
2GX8
MT40A4G4VA-062E:B
Micron Technology's MT40A4G4VA-062E:B is a DDR4 DRAM with 4GX4 organization, operating at 1600 MHz. It features a thin profile grid array package with 78 terminals and operates synchronously. Ideal for applications requiring high-speed memory access in devices like servers and high-performance computing systems.
MTA18ASF2G72PDZ-3G2J3
Micron Technology's MTA18ASF2G72PDZ-3G2J3 is a DDR4 DRAM MODULE with 2GX72 organization, 1600 MHz clock frequency, and 154618822656 bit memory density. It operates synchronously at 1.2V and is ideal for high-performance computing applications requiring fast data processing.
154618822656 bit
2GX72
MTA4ATF1G64HZ-3G2E1
Micron Technology's MTA4ATF1G64HZ-3G2E1 is a DDR4 DRAM MODULE with 1GX64 organization, operating at up to 1600 MHz. It features self-refresh capability and synchronous operation, making it ideal for high-performance computing applications.
MT40A2G8JC-062E:E
Micron Technology's MT40A2G8JC-062E:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access such as servers, workstations, and high-performance computing systems.
MT40A4G4JC-062E:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MTA18ASF2G72HZ-2G6E1
Micron Technology's MTA18ASF2G72HZ-2G6E1 is a DDR4 DRAM MODULE with 2GX72 organization, operating at 1333 MHz. It features a memory density of 154618822656 bit and supports DUAL BANK PAGE BURST access mode. Ideal for applications requiring high-speed synchronous memory with self-refresh capability.
1333 MHz
30.15 mm
.45 Amp
1881 mA
MTA8ATF2G64HZ-3G2E2
Micron Technology's MTA8ATF2G64HZ-3G2E2 is a DDR4 DRAM MODULE with 2GX64 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in microelectronic assemblies.
DIMM260,20
.304 Amp
1480 mA
.5 mm
W631GG6NB-12
Winbond Electronics
DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;
20 ns
DDR3 DRAM
.04 Amp
220 mA
1.575 V
1.5
W631GG6NB-09
Winbond Electronics' W631GG6NB-09 is a DDR3 DRAM with 64MX16 organization, operating at 1066 MHz. It features a 1.5V nominal voltage and offers multi-bank page burst access mode. This memory module is suitable for applications requiring high-speed synchronous operation in devices with limited space constraints.
1066 MHz
.05 Amp
270 mA
W631GU6NB-09
The Winbond Electronics W631GU6NB-09 is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. It features synchronous operation, self-refresh capability, and a max clock frequency of 1066 MHz. Ideal for applications requiring high-speed memory access in devices such as laptops, tablets, and networking equipment.
W631GU6NB-12
W631GU6NB-12 by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at up to 800 MHz. It features a low supply voltage of 1.35V and offers a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
.055 Amp
MTA36ASF4G72PZ-2G6B2
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Sequential Burst Length: 8;
309237645312 bit
4GX72
.792 Amp
3996 mA
MTA9ASF1G72PZ-2G9E1
Micron Technology's MTA9ASF1G72PZ-2G9E1 is a DDR4 DRAM MODULE with 1GX72 organization, operating at up to 1466 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in servers or data centers.
1466 MHz
1665 mA
MTA18ASF2G72PZ-2G9E1
Micron Technology's MTA18ASF2G72PZ-2G9E1 is a DDR4 DRAM MODULE with 2GX72 organization, operating at 1466 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in servers or data centers.
.396 Amp
3870 mA
MTA36ASF4G72PZ-3G2E7
DDR4 DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX;
4536 mA
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