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TFBGA DRAM 587

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT40A1G8SA-062EAIT:E by Micron Technology

MT40A1G8SA-062EAIT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EAIT:E is a DDR4 DRAM with 1.2V supply, operating at up to 1600MHz clock frequency. It features 1GX8 organization, 1073741824 words capacity, and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics or industrial systems.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.018 Amp

190 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G8SA-062EAUT:E by Micron Technology

MT40A1G8SA-062EAUT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EAUT:E is a DDR4 DRAM with 1.2V supply, 1600MHz clock frequency, and 1GX8 organization. It operates synchronously, supports self-refresh, and has a max temperature of 125°C. Ideal for applications requiring high-speed memory in automotive or industrial environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.022 Amp

200 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A512M16LY-062EAIT:E by Micron Technology

MT40A512M16LY-062EAIT:E

Micron Technology

Micron Technology's MT40A512M16LY-062EAIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13.5 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.018 Amp

270 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

D2516ECMDXGJDI-U by Kingston Technology Company

D2516ECMDXGJDI-U

Kingston Technology Company

Kingston's D2516ECMDXGJDI-U is a DDR3L DRAM with 256MX16 organization, 1.35V supply voltage, and 95°C max operating temp. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and common I/O type for efficient data processing in thin profile grid array packages.

SELF REFRESH; BACKWARD COMPATIBLE TO 1.5V VDD

COMMON

4,8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

4,8

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm

MT53E768M32D4DE-046AAT:E by Micron Technology

MT53E768M32D4DE-046AAT:E

Micron Technology

Micron Technology's MT53E768M32D4DE-046AAT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features self-refresh and common I/O type, suitable for industrial applications requiring high memory density and fast clock frequency. The package style is grid array with thin profile, making it ideal for space-constrained designs.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

105 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.14 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53E384M32D2FW-046AIT:E by Micron Technology

MT53E384M32D2FW-046AIT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA200,12X20,32/25;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

12884901888 bit

LPDDR4 DRAM

32

1

1

200

402653184 words

384M

SYNCHRONOUS

95 Cel

-40 Cel

384MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53E768M32D4DE-046AIT:E by Micron Technology

MT53E768M32D4DE-046AIT:E

Micron Technology

Micron Technology's MT53E768M32D4DE-046AIT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features self-refresh and common I/O type, suitable for industrial applications requiring high memory density and fast clock frequency.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

95 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.14 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53E384M32D2FW-046AAT:E by Micron Technology

MT53E384M32D2FW-046AAT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Input/Output Type: COMMON;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

12884901888 bit

LPDDR4 DRAM

32

1

1

200

402653184 words

384M

SYNCHRONOUS

105 Cel

-40 Cel

384MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

IS43QR16256B-083RBLI-TR by Integrated Silicon Solution

IS43QR16256B-083RBLI-TR

Integrated Silicon Solution

IS43QR16256B-083RBLI-TR by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.48 MHz clock frequency. It features synchronous operation, self-refresh capability, and common input/output type. Ideal for industrial applications requiring high memory density and fast data processing.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

1200.48 MHz

COMMON

8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

8

.058 Amp

375 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M16LY-062EIT:ETR by Micron Technology

MT40A512M16LY-062EIT:ETR

Micron Technology

Micron Technology's MT40A512M16LY-062EIT:ETR is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. This thin-profile memory module is suitable for applications requiring high-speed data processing in a compact form factor.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

e1

13.5 mm

8589934592 bit

DDR4 DRAM

16

3

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A1G16KH-062EAUT:E by Micron Technology

MT40A1G16KH-062EAUT:E

Micron Technology

Micron Technology's MT40A1G16KH-062EAUT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.043 Amp

299 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT40A2G8JE-062EAUT:E by Micron Technology

MT40A2G8JE-062EAUT:E

Micron Technology

Micron Technology's MT40A2G8JE-062EAUT:E is a DDR4 DRAM with 2GX8 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a thin profile and fine pitch package style.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

125 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.043 Amp

162 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

30

9 mm

MT40A1G16KH-062EAIT:E by Micron Technology

MT40A1G16KH-062EAIT:E

Micron Technology

Micron Technology's MT40A1G16KH-062EAIT:E is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features common I/O type, synchronous mode, and self-refresh capability. Ideal for applications requiring high-speed memory in automotive and industrial environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.043 Amp

299 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G8JE-062EAAT:E by Micron Technology

MT40A2G8JE-062EAAT:E

Micron Technology

Micron Technology's MT40A2G8JE-062EAAT:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a common I/O type, synchronous mode, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.043 Amp

162 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT40A512M16TB-062E:R by Micron Technology

MT40A512M16TB-062E:R

Micron Technology

Micron Technology's MT40A512M16TB-062E:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as computers and servers.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

65536

NO

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

30

7.5 mm

MT41K2G4RKB-107:P by Micron Technology

MT41K2G4RKB-107:P

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 933 MHz;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B78

10.5 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

.022 Amp

163 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

30

8 mm

MT53E512M16D1FW-046AIT:D by Micron Technology

MT53E512M16D1FW-046AIT:D

Micron Technology

Micron Technology's MT53E512M16D1FW-046AIT:D is a LPDDR4 DRAM with 512MX16 organization, operating at up to 2136.7 MHz clock frequency. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed and low-power memory solutions in automotive electronics or mobile devices.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

16

1

1

200

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E512M16D1FW-046AAT:D by Micron Technology

MT53E512M16D1FW-046AAT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Width: 16; Sequential Burst Length: 16,32;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

16

1

1

200

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E512M32D2FW-046AUT:D by Micron Technology

MT53E512M32D2FW-046AUT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; No. of Ports: 1;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E512M32D2FW-046AIT:D by Micron Technology

MT53E512M32D2FW-046AIT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS; Sequential Burst Length: 16,32;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT61M256M32JE-10AAT:A by Micron Technology

MT61M256M32JE-10AAT:A

Micron Technology

GDDR6 DRAM; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.2125 V; Memory Density: 8589934592 bit;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

16

1500 MHz

COMMON

R-PBGA-B180

14 mm

8589934592 bit

GDDR6 DRAM

32

1

1

180

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA180,14X18,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

BALL

.75 mm

BOTTOM

12 mm

MT61M256M32JE-12AAT:A by Micron Technology

MT61M256M32JE-12AAT:A

Micron Technology

Micron Technology's MT61M256M32JE-12AAT:A is a GDDR6 DRAM with 256MX32 organization, operating at up to 1500 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for high-performance applications requiring fast memory access and data processing.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

16

1500 MHz

COMMON

R-PBGA-B180

14 mm

8589934592 bit

GDDR6 DRAM

32

1

1

180

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA180,14X18,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

BALL

.75 mm

BOTTOM

12 mm

MT40A4G4SA-062E:F by Micron Technology

MT40A4G4SA-062E:F

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX4

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G16KD-062EIT:ETR by Micron Technology

MT40A1G16KD-062EIT:ETR

Micron Technology

Micron Technology's MT40A1G16KD-062EIT:ETR is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like computers and servers.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

e1

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT40A1G16KD-062EIT:E by Micron Technology

MT40A1G16KD-062EIT:E

Micron Technology

Micron Technology's MT40A1G16KD-062EIT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

e1

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

95 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT40A2G8SA-062E:F by Micron Technology

MT40A2G8SA-062E:F

Micron Technology

Micron Technology's MT40A2G8SA-062E:F is a DDR4 DRAM with 2GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT53E512M64D2HJ-046WT:B by Micron Technology

MT53E512M64D2HJ-046WT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Terminal Form: BALL; Technology: CMOS;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2136.7 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

556

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX64

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E128M32D2FW-046IT:A by Micron Technology

MT53E128M32D2FW-046IT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 10 mm; Memory Width: 32;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E128M32D2FW-046WT:A by Micron Technology

MT53E128M32D2FW-046WT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.17 V; Minimum Operating Temperature: -25 Cel;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-25 Cel

128MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT40A512M16TB-062E:J by Micron Technology

MT40A512M16TB-062E:J

Micron Technology

Micron Technology's MT40A512M16TB-062E:J is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B96

13.5 mm

8589934592 bit

DDR4 DRAM

16

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G8SA-062E:J by Micron Technology

MT40A1G8SA-062E:J

Micron Technology

Micron Technology's MT40A1G8SA-062E:J is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G4SA-062E:J by Micron Technology

MT40A2G4SA-062E:J

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G4SA-062E:R by Micron Technology

MT40A2G4SA-062E:R

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR; Package Equivalence Code: BGA78,6X13,32;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

11 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

65536

NO

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT47H32M8BP-3:BTR by Micron Technology

MT47H32M8BP-3:BTR

Micron Technology

DDR2 DRAM; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Supply Current: 250 mA;

FOUR BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

268435456 bit

DDR2 DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX8

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

4,8

.04 Amp

250 mA

1.9 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT47H64M16NF-25EAAT:MTR by Micron Technology

MT47H64M16NF-25EAAT:MTR

Micron Technology

Micron Technology's MT47H64M16NF-25EAAT:MTR is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in automotive electronics or industrial control systems.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

4,8

.01 Amp

260 mA

1.9 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT53E1G32D2FW-046AUT:B by Micron Technology

MT53E1G32D2FW-046AUT:B

Micron Technology

Micron Technology's MT53E1G32D2FW-046AUT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 125 °C, and is suitable for applications requiring high-speed synchronous memory.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

34359738368 bit

LPDDR4 DRAM

32

1

1

200

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX32

PLASTIC/EPOXY

TFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E256M32D2FW-046AAT:B by Micron Technology

MT53E256M32D2FW-046AAT:B

Micron Technology

Micron Technology's MT53E256M32D2FW-046AAT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial devices.

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

AS4C256M16D3LC-12BANTR by Alliance Memory

AS4C256M16D3LC-12BANTR

Alliance Memory

Alliance Memory's AS4C256M16D3LC-12BANTR is a 256MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 105°C operating temperature. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type in a compact grid array package.

MULTI BANK PAGE BURST

800 MHz

COMMON

4,8

R-PBGA-B96

e1

13.5 mm

4294967296 bit

DDR3L DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

4,8

.0096 Amp

228 mA

1.45 V

1.283 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

AS4C512M16D3LB-12BINTR by Alliance Memory

AS4C512M16D3LB-12BINTR

Alliance Memory

Alliance Memory's AS4C512M16D3LB-12BINTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY

800 MHz

COMMON

4,8

R-PBGA-B96

13.5 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,6X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.06 Amp

122 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-10BINTR by Alliance Memory

AS4C512M16D3LC-10BINTR

Alliance Memory

Alliance Memory's AS4C512M16D3LC-10BINTR is a DDR3L DRAM with 512MX16 organization, operating at 933 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

MULTI BANK PAGE BURST

933 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

360 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-12BCN by Alliance Memory

AS4C512M16D3LC-12BCN

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices like smartphones and tablets.

MULTI BANK PAGE BURST

800 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

350 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-12BINTR by Alliance Memory

AS4C512M16D3LC-12BINTR

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BINTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. Featuring synchronous mode and self-refresh capability, it has a package style of GRID ARRAY for applications requiring high-speed memory in compact form factors.

MULTI BANK PAGE BURST

800 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

350 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-12BCNTR by Alliance Memory

AS4C512M16D3LC-12BCNTR

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BCNTR is a DDR3L DRAM with 512MX16 organization, operating at up to 800 MHz. Featuring common I/O type and self-refresh mode, it offers 8192 refresh cycles and supports multi-bank page burst access. Ideal for applications requiring high-speed synchronous memory with low power consumption.

MULTI BANK PAGE BURST

800 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

350 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-10BIN by Alliance Memory

AS4C512M16D3LC-10BIN

Alliance Memory

Alliance Memory's AS4C512M16D3LC-10BIN is a DDR3L DRAM with 512MX16 organization, operating at up to 933 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory with low power consumption in a compact grid array package.

MULTI BANK PAGE BURST

933 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

360 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-12BIN by Alliance Memory

AS4C512M16D3LC-12BIN

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BIN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

800 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

350 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3LC-10BCN by Alliance Memory

AS4C512M16D3LC-10BCN

Alliance Memory

Alliance Memory's AS4C512M16D3LC-10BCN is a DDR3L DRAM with 512MX16 organization, operating at up to 933 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory with low power consumption.

MULTI BANK PAGE BURST

933 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

.016 Amp

360 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT40A8G4NEA-062E:F by Micron Technology

MT40A8G4NEA-062E:F

Micron Technology

Micron Technology's MT40A8G4NEA-062E:F is a DDR4 DRAM with 8GX4 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access and multi-bank page burst functionality.

MULTI BANK PAGE BURST

1600 MHz

COMMON

R-PBGA-B78

11 mm

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

TFBGA

BGA78,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

308 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT53E256M32D2FW-046AIT:B by Micron Technology

MT53E256M32D2FW-046AIT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Ports: 1; Minimum Supply Voltage (Vsup): 1.06 V;

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm