Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
MT40A256M16LY-075:F
Micron Technology
Micron Technology's MT40A256M16LY-075:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
DUAL BANK PAGE BURST
AUTO/SELF REFRESH
R-PBGA-B96
e1
13.5 mm
4294967296 bit
DDR4 DRAM
16
1
96
268435456 words
256M
SYNCHRONOUS
95 Cel
0 Cel
256MX16
PLASTIC/EPOXY
TFBGA
RECTANGULAR
GRID ARRAY, THIN PROFILE, FINE PITCH
260
1.2 mm
YES
1.26 V
1.14 V
1.2
CMOS
OTHER
TIN SILVER COPPER
BALL
.8 mm
BOTTOM
30
7.5 mm
MT40A512M8SA-075:F
Micron Technology's MT40A512M8SA-075:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in a compact form factor.
FOUR BANK PAGE BURST
R-PBGA-B78
11 mm
8
78
536870912 words
512M
512MX8
MT40A1G16RC-062E:B
Micron Technology's MT40A1G16RC-062E:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in thin-profile devices.
MULTI BANK PAGE BURST
1600 MHz
COMMON
13 mm
17179869184 bit
1073741824 words
1G
1GX16
BGA96,9X16,32
8192
Tin/Silver/Copper (Sn/Ag/Cu)
10 mm
AS4C512M16D3LA-10BCNTR
Alliance Memory
Alliance Memory's AS4C512M16D3LA-10BCNTR is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating from 0 to 95 °C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density in a compact form factor.
8589934592 bit
DDR DRAM MODULE
3
512MX16
1.425 V
1.275 V
1.35
9 mm
AS4C512M16D3LA-10BCN
Alliance Memory's AS4C512M16D3LA-10BCN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating at synchronous mode with self-refresh capability. Ideal for applications requiring high memory density and fast access speeds in a compact GRID ARRAY package.
MT40A512M16JY-083EIT:BTR
Micron Technology's MT40A512M16JY-083EIT:BTR is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access mode like multi-bank page burst operations.
14 mm
-40 Cel
INDUSTRIAL
8 mm
MT40A512M8SA-062EIT:F
Micron Technology's MT40A512M8SA-062EIT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access with its four-bank page burst access mode.
MT40A512M16LY-062EAUT:E
Micron Technology's MT40A512M16LY-062EAUT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and automotive temperature grade. Suitable for applications requiring high memory density and fast data access in automotive electronics.
125 Cel
AUTOMOTIVE
AS4C512M16D3LB-12BCN
Alliance Memory's AS4C512M16D3LB-12BCN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with low power consumption and common I/O type.
AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY
800 MHz
DDR3L DRAM
3-STATE
.06 Amp
470 mA
1.45 V
1.283 V
IS42S32800J-7BL-TR
Integrated Silicon Solution
IS42S32800J-7BL-TR by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a memory width of 32 bits, and offers a max access time of 5.4ns. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
5.4 ns
R-PBGA-B90
268435456 bit
SYNCHRONOUS DRAM
32
90
8388608 words
8M
70 Cel
8MX32
3.6 V
3 V
3.3
COMMERCIAL
10
MT41K512M8RH-125IT:ETR
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit;
10.5 mm
MT41K512M16VRN-107IT:P
MT41K512M16VRN-107IT:P by Micron Technology is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and single bank page burst access mode.
SINGLE BANK PAGE BURST
AS4C512M8D4-83BCN
Alliance Memory's AS4C512M8D4-83BCN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in compact devices.
1200 MHz
10.6 mm
BGA78,9X13,32
NOT SPECIFIED
.04 Amp
187 mA
MT40A1G8SA-062EAAT:E
Micron Technology's MT40A1G8SA-062EAAT:E is a DDR4 DRAM with 1.2V supply, 1600MHz clock frequency, and 1GX8 organization. It operates synchronously in common I/O mode for automotive applications at temperatures ranging from -40 to 105°C.
105 Cel
1GX8
AEC-Q100
.02 Amp
195 mA
MT40A512M16LY-062EAT:E
Micron Technology's MT40A512M16LY-062EAT:E is a DDR4 DRAM with 512MX16 organization and 8589934592 bit memory density. It operates at a voltage of 1.2V, has a temperature range of -40 to 105°C, and is suitable for industrial applications.
65536
NO
MT40A1G8SA-062E:ETR
Micron Technology's MT40A1G8SA-062E:ETR is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in temperatures ranging from 0 to 95°C.
MT40A256M16LY-062E:FTR
MT40A256M16LY-062E:FTR by Micron Technology is a DDR4 DRAM with 256MX16 organization, operating at a max clock frequency of 1600 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.
.003 Amp
312 mA
MT40A2G4SA-062E:ETR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;
4
2147483648 words
2G
2GX4
MT40A2G8VA-062EIT:BTR
MT40A2G8VA-062EIT:BTR by Micron Technology is a DDR4 DRAM with 2GX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and fast access speed in a compact grid array package.
2GX8
MT40A512M16JY-062E:BTR
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;
MT40A512M8RH-083EAAT:BTR
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Standby Voltage: 1.14 V;
1200.4 MHz
MT40A512M8RH-083EAUT:BTR
DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS;
MT41K256M8DA-107:KTR
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;
2147483648 bit
256MX8
MT41K512M4DA-125:KTR
Micron Technology's MT41K512M4DA-125:KTR is a DDR3L DRAM with 512MX4 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and tablets.
512MX4
AS4C1G8MD3L-12BCNTR
Alliance Memory's AS4C1G8MD3L-12BCNTR is a DDR3L DRAM with 1GX8 organization, operating at up to 800 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
4,8
13.2 mm
.011 Amp
125 mA
AS4C256M16D3B-12BINTR
Alliance Memory's AS4C256M16D3B-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, suitable for industrial applications. It features synchronous operation, common I/O type, and self-refresh capability. With a thin profile and fine pitch package style, it offers high memory density of 4294967296 bits.
DDR3 DRAM
.032 Amp
55 mA
1.575 V
1.5
AS4C512M16D3L-12BCNTR
Alliance Memory's AS4C512M16D3L-12BCNTR is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. Featuring synchronous mode and self-refresh capability, it has a thin profile grid array package suitable for applications requiring high-speed memory access and low power consumption.
185 mA
AS4C512M16D3L-12BINTR
Alliance Memory's AS4C512M16D3L-12BINTR is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, suitable for industrial applications. Features include 1.35V nominal voltage, 95°C max operating temp, and multi-bank page burst access mode. Ideal for high-performance systems requiring low power consumption and fast data processing.
AS4C64M16D2A-25BCNTR
Alliance Memory's AS4C64M16D2A-25BCNTR is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
.4 ns
400 MHz
R-PBGA-B84
12.5 mm
1073741824 bit
DDR2 DRAM
84
67108864 words
64M
85 Cel
64MX16
BGA84,9X15,32
.01 Amp
1.7 V
170 mA
1.9 V
1.8
IS42S16400J-6BLI-TR
IS42S16400J-6BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 166MHz. It features self-refresh mode, 54 terminals in a thin profile grid array package, and supports common I/O type. Ideal for industrial applications requiring fast memory access and high density storage capabilities.
166 MHz
1,2,4,8
S-PBGA-B54
67108864 bit
54
4194304 words
4M
4MX16
BGA54,9X9,32
SQUARE
Not Qualified
4096
1,2,4,8,FP
.002 Amp
DRAMs
150 mA
W9864G6JT-6ITR
Winbond Electronics
W9864G6JT-6ITR by Winbond Electronics is a 4MX16 Synchronous DRAM with 67108864 bit memory density. It operates at 3.3V, has a max access time of 5ns, and supports four bank page burst access mode. This thin profile memory IC is ideal for industrial applications requiring high-speed data processing in compact spaces.
5 ns
AS4C32M16SB-7BINTR
Alliance Memory's AS4C32M16SB-7BINTR is a 32MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and a thin profile grid array package.
143 MHz
COMMON/SEPARATE
536870912 bit
33554432 words
32M
32MX16
.008 Amp
120 mA
AS4C32M16SB-7BIN
Alliance Memory's AS4C32M16SB-7BIN is a 32MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and a thin profile grid array package.
IS43TR81024BL-107MBLI
IS43TR81024BL-107MBLI by Integrated Silicon Solution is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.
IS46TR16640CL-107MBLA2
IS46TR16640CL-107MBLA2 by Integrated Silicon Solution is a 64MX16 DDR3 DRAM with 1.35V supply voltage, operating in synchronous mode with self-refresh capability. It features a memory density of 1073741824 bits and is suitable for industrial applications requiring multi-bank page burst access mode at temperatures ranging from -40 to 105°C.
IS43LQ32256A-062BLI
IS43LQ32256A-062BLI by Integrated Silicon Solution is a 256MX32 LPDDR4 DRAM with 1600 MHz clock frequency. It operates synchronously at temperatures from -40 to 85 °C, suitable for high-performance applications requiring fast data processing and multi-bank page burst access mode. The package style is grid array, thin profile, fine pitch, making it ideal for compact electronic devices.
TERM PITCH-MAX; ALSO REQUIRE SUPPLY VOLTAGE 1.06V TO 1.17V
16,32
R-PBGA-B200
14.5 mm
LPDDR4 DRAM
200
256MX32
BGA200,12X22,32/25
16384
1.1 mm
1.95 V
.65 mm
MT40A1G16RC-062EIT:B
Micron Technology's MT40A1G16RC-062EIT:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT40A2G8VA-062E:B
Micron Technology's MT40A2G8VA-062E:B is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data processing in devices like servers and high-performance computers.
MT40A4G4VA-062E:B
Micron Technology's MT40A4G4VA-062E:B is a DDR4 DRAM with 4GX4 organization, operating at 1600 MHz. It features a thin profile grid array package with 78 terminals and operates synchronously. Ideal for applications requiring high-speed memory access in devices like servers and high-performance computing systems.
4294967296 words
4G
4GX4
MT40A8G4BAF-062E:B
DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;
34359738368 bit
8589934592 words
8G
8GX4
BGA78,9X11,32
277 mA
MT40A4G8BAF-062E:B
Micron Technology's MT40A4G8BAF-062E:B is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a density of 34359738368 bits.
4GX8
245 mA
MT40A512M16LY-062EAAT:E
Micron Technology's MT40A512M16LY-062EAAT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 105 °C, and has a max supply voltage of 1.26 V. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
275 mA
MT40A2G8JC-062E:E
Micron Technology's MT40A2G8JC-062E:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access such as servers, workstations, and high-performance computing systems.
MT40A4G4JC-062E:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT40A1G16KH-062EAAT:E
Micron Technology's MT40A1G16KH-062EAAT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for automotive applications due to AEC-Q100 screening level and wide temperature range (-40 to 105°C).
.043 Amp
299 mA
AS4C512M16D4-75BINTR
Alliance Memory's AS4C512M16D4-75BINTR is a DDR4 DRAM with 512MX16 organization, operating at 1333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory with a max clock frequency of 1333 MHz.
1333 MHz
.135 Amp
430 mA
AS4C512M16D4-75BIN
Alliance Memory's AS4C512M16D4-75BIN is a 512MX16 DDR4 DRAM with 1333 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for applications requiring high memory density and fast data processing in devices like servers, workstations, and networking equipment.
MT53E512M32D2FW-046AAT:D
Micron Technology's MT53E512M32D2FW-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact package.
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
2136.7 MHz
512MX32
1.17 V
1.06 V
1.1
© 2023 All rights reserved
