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TFBGA DRAM 587

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT53E256M16D1FW-046AAT:B by Micron Technology

MT53E256M16D1FW-046AAT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA200,12X22,32/25; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

16

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E768M64D4HJ-046AAT:A by Micron Technology

MT53E768M64D4HJ-046AAT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Maximum Standby Current: .0032 Amp; Memory Density: 51539607552 bit;

MULTI BANK PAGE BURST

3.5 ns

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

51539607552 bit

LPDDR4 DRAM

64

1

1

556

805306368 words

768M

SYNCHRONOUS

105 Cel

-40 Cel

768MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0032 Amp

320 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E768M64D4HJ-046AIT:A by Micron Technology

MT53E768M64D4HJ-046AIT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Minimum Operating Temperature: -40 Cel; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

3.5 ns

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

51539607552 bit

LPDDR4 DRAM

64

1

1

556

805306368 words

768M

SYNCHRONOUS

95 Cel

-40 Cel

768MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0032 Amp

320 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E512M64D4HJ-046AAT:D by Micron Technology

MT53E512M64D4HJ-046AAT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Sequential Burst Length: 16,32; Output Characteristics: 3-STATE;

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

556

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0036 Amp

390 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E512M64D4HJ-046AIT:D by Micron Technology

MT53E512M64D4HJ-046AIT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Maximum Clock Frequency (fCLK): 2133 MHz; Output Characteristics: 3-STATE;

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

556

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0036 Amp

390 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E1536M32D4DE-046AIT:B by Micron Technology

MT53E1536M32D4DE-046AIT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Interleaved Burst Length: 16,32; No. of Ports: 1;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

51539607552 bit

LPDDR4 DRAM

32

1

1

200

1610612736 words

1536M

SYNCHRONOUS

95 Cel

-40 Cel

1536MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.14 mm

YES

16,32

.00075 Amp

260 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E1536M32D4DE-046AAT:B by Micron Technology

MT53E1536M32D4DE-046AAT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00075 Amp; Memory Density: 51539607552 bit;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

51539607552 bit

LPDDR4 DRAM

32

1

1

200

1610612736 words

1536M

SYNCHRONOUS

105 Cel

-40 Cel

1536MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.14 mm

YES

16,32

.00075 Amp

260 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT40A512M16TB-062EIT:R by Micron Technology

MT40A512M16TB-062EIT:R

Micron Technology

Micron Technology's MT40A512M16TB-062EIT:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT53E512M64D4HJ-046AUT:D by Micron Technology

MT53E512M64D4HJ-046AUT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; No. of Words: 536870912 words; Maximum Operating Temperature: 125 Cel;

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

556

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0036 Amp

390 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT40A1G16TD-062EAUT:F by Micron Technology

MT40A1G16TD-062EAUT:F

Micron Technology

Micron Technology's MT40A1G16TD-062EAUT:F is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features a thin profile grid array package and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B96

13 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.038 Amp

200 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

7.5 mm

MT40A2G8AG-062EAAT:F by Micron Technology

MT40A2G8AG-062EAAT:F

Micron Technology

Micron Technology's MT40A2G8AG-062EAAT:F is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a thin profile grid array package, suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1600 MHz

COMMON

8

R-PBGA-B78

11 mm

17179869184 bit

DDR4 DRAM

8

1

1

78

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

AEC-Q100

1.2 mm

YES

8

.084 Amp

81 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm