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TFBGA DRAM 587

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT41K1G4RG-107:N by Micron Technology

MT41K1G4RG-107:N

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.6 mm

4294967296 bit

DDR3L DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT41K256M16LY-107:N by Micron Technology

MT41K256M16LY-107:N

Micron Technology

Micron Technology's MT41K256M16LY-107:N is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and tablets.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13.5 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT41K512M8RG-093:N by Micron Technology

MT41K512M8RG-093:N

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.6 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT41K512M8RG-107:N by Micron Technology

MT41K512M8RG-107:N

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.6 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

MT47H64M16NF-25EXIT:M by Micron Technology

MT47H64M16NF-25EXIT:M

Micron Technology

Micron Technology's MT47H64M16NF-25EXIT:M is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access times, and multi-bank page burst access mode.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

IS42SM16200D-6BLI by Integrated Silicon Solution

IS42SM16200D-6BLI

Integrated Silicon Solution

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

DUAL BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

33554432 bit

SYNCHRONOUS DRAM

16

3

1

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

IS42VM16200D-6BLI by Integrated Silicon Solution

IS42VM16200D-6BLI

Integrated Silicon Solution

IS42VM16200D-6BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. Operating at 1.8V, it offers dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring high memory density and fast access times up to 5.5 ns.

DUAL BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

33554432 bit

SYNCHRONOUS DRAM

16

3

1

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

IS42VM16200D-75BLI by Integrated Silicon Solution

IS42VM16200D-75BLI

Integrated Silicon Solution

IS42VM16200D-75BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. It operates at 1.8V, has a max access time of 6ns, and features dual bank page burst access mode. Ideal for industrial applications requiring high-speed and reliable memory performance in compact spaces.

DUAL BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

33554432 bit

SYNCHRONOUS DRAM

16

3

1

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H32M16NF-25EAIT:H by Micron Technology

MT47H32M16NF-25EAIT:H

Micron Technology

Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

12.5 mm

536870912 bit

DDR2 DRAM

16

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.2 mm

YES

4,8

.01 Amp

215 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT47H64M8SH-25EAAT:H by Micron Technology

MT47H64M8SH-25EAAT:H

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

10 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.2 mm

YES

4,8

.01 Amp

150 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT47H64M8SH-25EAIT:H by Micron Technology

MT47H64M8SH-25EAIT:H

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

10 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.2 mm

YES

4,8

.01 Amp

150 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT41K1G8SN-107:A by Micron Technology

MT41K1G8SN-107:A

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K1G8SN-107IT:A by Micron Technology

MT41K1G8SN-107IT:A

Micron Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.283 V;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K1G8SN-125:A by Micron Technology

MT41K1G8SN-125:A

Micron Technology

Micron Technology's MT41K1G8SN-125:A is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 8589934592 bits. Ideal for applications requiring high-speed data processing in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT41K1G8SN-125IT:A by Micron Technology

MT41K1G8SN-125IT:A

Micron Technology

Micron Technology's MT41K1G8SN-125IT:A is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K2G4SN-125:A by Micron Technology

MT41K2G4SN-125:A

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K512M16HA-107:A by Micron Technology

MT41K512M16HA-107:A

Micron Technology

Micron Technology's MT41K512M16HA-107:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT41K512M16HA-107IT:A by Micron Technology

MT41K512M16HA-107IT:A

Micron Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K512M16HA-125:A by Micron Technology

MT41K512M16HA-125:A

Micron Technology

Micron Technology's MT41K512M16HA-125:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT41K512M16HA-125IT:A by Micron Technology

MT41K512M16HA-125IT:A

Micron Technology

MT41K512M16HA-125IT:A by Micron Technology is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT41J64M16JT-15EIT:GTR by Micron Technology

MT41J64M16JT-15EIT:GTR

Micron Technology

Micron Technology's MT41J64M16JT-15EIT:GTR is a DDR3 DRAM with 64MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data access in thin profile devices.

MULTI BANK PAGE BURST

.125 ns

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

IS43TR16128C-15HBL by Integrated Silicon Solution

IS43TR16128C-15HBL

Integrated Silicon Solution

IS43TR16128C-15HBL by Integrated Silicon Solution is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in electronic devices.

MULTI BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

R-PBGA-B96

e1

13 mm

2147483648 bit

DDR3 DRAM

16

3

1

1

96

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

10

9 mm

MT40A512M16HA-083E:A by Micron Technology

MT40A512M16HA-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT40A512M16HA-083EIT:A by Micron Technology

MT40A512M16HA-083EIT:A

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT41K1G16DGA-125:A by Micron Technology

MT41K1G16DGA-125:A

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

17179869184 bit

DDR3L DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.425 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9.5 mm

W972GG6KB25I by Winbond Electronics

W972GG6KB25I

Winbond Electronics

Winbond Electronics' W972GG6KB25I is a 128MX16 DDR2 DRAM with 1.8V supply, operating at 400MHz clock frequency. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact form factors like mobile devices and embedded systems.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

12.5 mm

2147483648 bit

DDR2 DRAM

16

1

1

84

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

4,8

.05 Amp

220 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT40A1G8PM-083E:A by Micron Technology

MT40A1G8PM-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR4 DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A2G4PM-083E:A by Micron Technology

MT40A2G4PM-083E:A

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K1G8RKB-107:N by Micron Technology

MT41K1G8RKB-107:N

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Access Mode: DUAL BANK PAGE BURST; Self Refresh: YES;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

10.5 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT41K2G4RKB-107:N by Micron Technology

MT41K2G4RKB-107:N

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Self Refresh: YES; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

10.5 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

2GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT41K512M16HA-125AIT:A by Micron Technology

MT41K512M16HA-125AIT:A

Micron Technology

Micron Technology's MT41K512M16HA-125AIT:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

W971GG6SB25I by Winbond Electronics

W971GG6SB25I

Winbond Electronics

The Winbond Electronics W971GG6SB25I is a DDR2 DRAM with 64MX16 organization, 1.8V nominal voltage, and 67108864 words capacity. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact electronic devices.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B84

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

AS4C512M16D3L-12BCN by Alliance Memory

AS4C512M16D3L-12BCN

Alliance Memory

Alliance Memory's AS4C512M16D3L-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

3

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.011 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3L-12BIN by Alliance Memory

AS4C512M16D3L-12BIN

Alliance Memory

Alliance Memory's AS4C512M16D3L-12BIN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, operating at 1.35V. It features multi-bank page burst access mode and offers 8192 refresh cycles. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

3

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.011 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

9 mm

IS42S16100H-7BL by Integrated Silicon Solution

IS42S16100H-7BL

Integrated Silicon Solution

IS42S16100H-7BL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features dual bank page burst access mode and offers a memory density of 16777216 bits. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.

DUAL BANK PAGE BURST

5.5 ns

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B60

10.1 mm

16777216 bit

SYNCHRONOUS DRAM

16

1

1

60

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,7X15,25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

2048

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

60 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.65 mm

BOTTOM

6.4 mm

EDY4016AABG-DR-F-D by Micron Technology

EDY4016AABG-DR-F-D

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 256M;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

EDY4016AABG-JD-F-D by Micron Technology

EDY4016AABG-JD-F-D

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

EDY4016AABG-GX-F-D by Micron Technology

EDY4016AABG-GX-F-D

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

MT40A1G16HBA-083E:A by Micron Technology

MT40A1G16HBA-083E:A

Micron Technology

Micron Technology's MT40A1G16HBA-083E:A is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

17179869184 bit

DDR4 DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9.5 mm

MT40A1G4RH-075E:B by Micron Technology

MT40A1G4RH-075E:B

Micron Technology

DDR4 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.14 V;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR4 DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

9 mm

MT40A1G4RH-083E:B by Micron Technology

MT40A1G4RH-083E:B

Micron Technology

Micron Technology's MT40A1G4RH-083E:B is a DDR4 DRAM with 1GX4 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in a compact form factor.

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR4 DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A256M16GE-062E:B by Micron Technology

MT40A256M16GE-062E:B

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT40A256M16GE-062EIT:B by Micron Technology

MT40A256M16GE-062EIT:B

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT40A256M16GE-075E:B by Micron Technology

MT40A256M16GE-075E:B

Micron Technology

Micron Technology's MT40A256M16GE-075E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for applications requiring high-speed data processing in commercial-grade environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

9 mm

MT40A256M16GE-075EIT:B by Micron Technology

MT40A256M16GE-075EIT:B

Micron Technology

Micron Technology's MT40A256M16GE-075EIT:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A256M16GE-083E:B by Micron Technology

MT40A256M16GE-083E:B

Micron Technology

Micron Technology's MT40A256M16GE-083E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed data processing applications in electronics.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT40A2G4TRF-093E:A by Micron Technology

MT40A2G4TRF-093E:A

Micron Technology

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1067.2 MHz

COMMON

8

R-PBGA-B78

11.5 mm

8589934592 bit

DDR4 DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

95 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

BGA78,6X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

8

.055 Amp

70 mA

1.26 V

1.14 V

1.2

YES

CMOS

BALL

.8 mm

BOTTOM

9.5 mm

MT40A512M8RH-075E:B by Micron Technology

MT40A512M8RH-075E:B

Micron Technology

DDR4 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.2;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

9 mm