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TFBGA DRAM 587

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT48LC16M8A2BB-6AAIT:L by Micron Technology

MT48LC16M8A2BB-6AAIT:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; Length: 16 mm;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

16 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT41J128M8JP-125:G by Micron Technology

MT41J128M8JP-125:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.1 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

11.5 mm

1073741824 bit

DDR3 DRAM

8

3

1

1

78

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.5

Not Qualified

8192

1.2 mm

YES

8

DRAMs

600 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

.8 mm

BOTTOM

30

8 mm

MT41J128M8JP-15E:G by Micron Technology

MT41J128M8JP-15E:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.125 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B78

e1

11.5 mm

1073741824 bit

DDR3 DRAM

8

1

1

78

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

DRAMs

490 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J128M8JP-15EIT:G by Micron Technology

MT41J128M8JP-15EIT:G

Micron Technology

DDR3 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.575 V;

MULTI BANK PAGE BURST

.125 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B78

e1

11.5 mm

1073741824 bit

DDR3 DRAM

8

1

1

78

134217728 words

128M

SYNCHRONOUS

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

DRAMs

490 mA

1.575 V

1.425 V

1.5

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J256M4JP-125:G by Micron Technology

MT41J256M4JP-125:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.1 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

11.5 mm

1073741824 bit

DDR3 DRAM

4

1

1

78

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

DRAMs

400 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J256M4JP-15E:G by Micron Technology

MT41J256M4JP-15E:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.125 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B78

e1

11.5 mm

1073741824 bit

DDR3 DRAM

4

1

1

78

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

DRAMs

315 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J64M16JT-125:G by Micron Technology

MT41J64M16JT-125:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.1 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3 DRAM

16

3

1

1

96

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

300 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J64M16JT-125E:G by Micron Technology

MT41J64M16JT-125E:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Not Qualified

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J64M16JT-15E:G by Micron Technology

MT41J64M16JT-15E:G

Micron Technology

MT41J64M16JT-15E:G by Micron Technology is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features a 1.5V supply voltage and offers 67108864 words of memory. Ideal for applications requiring high-speed synchronous operation and common I/O type, such as servers, workstations, and networking equipment.

MULTI BANK PAGE BURST

.125 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3 DRAM

16

3

1

1

96

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

265 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

.8 mm

BOTTOM

30

8 mm

MT41J64M16JT-15EIT:G by Micron Technology

MT41J64M16JT-15EIT:G

Micron Technology

Micron Technology's MT41J64M16JT-15EIT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features a 1.5V supply voltage and offers 67108864 words of memory. Suitable for applications requiring high-speed synchronous memory access in compact devices.

MULTI BANK PAGE BURST

.125 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

265 mA

1.575 V

1.425 V

1.5

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT41J64M16JT-187E:G by Micron Technology

MT41J64M16JT-187E:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.15 ns

AUTO/SELF REFRESH

533 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

300 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41K256M16HA-125MAIT:E by Micron Technology

MT41K256M16HA-125MAIT:E

Micron Technology

Micron Technology's MT41K256M16HA-125MAIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications in various electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT41K512M8RH-125MAIT:E by Micron Technology

MT41K512M8RH-125MAIT:E

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.35; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT47H64M16HR-25EIT:HTR by Micron Technology

MT47H64M16HR-25EIT:HTR

Micron Technology

Micron Technology's MT47H64M16HR-25EIT:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access time of 0.4ns, and multi-bank page burst access mode.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

3

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT41J64M16JT-15EXIT:G by Micron Technology

MT41J64M16JT-15EXIT:G

Micron Technology

Micron Technology's MT41J64M16JT-15EXIT:G is a DDR3 DRAM with 64MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for industrial applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H32M16HR-3:F by Micron Technology

MT47H32M16HR-3:F

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

3

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

350 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT47H128M8BT-37E:A by Micron Technology

MT47H128M8BT-37E:A

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 92; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B92

e1

19 mm

1073741824 bit

DDR2 DRAM

8

1

1

92

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA92,9X21,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

290 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

11 mm

MT47H128M8BT-5E:A by Micron Technology

MT47H128M8BT-5E:A

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 92; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.6 ns

AUTO/SELF REFRESH

200 MHz

COMMON

4,8

R-PBGA-B92

e1

19 mm

1073741824 bit

DDR2 DRAM

8

1

1

92

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA92,9X21,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

260 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

11 mm

MT47H16M16BG-5E:B by Micron Technology

MT47H16M16BG-5E:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.6 ns

AUTO/SELF REFRESH

200 MHz

COMMON

4,8

R-PBGA-B84

e1

14 mm

268435456 bit

DDR2 DRAM

16

1

1

84

16777216 words

16M

SYNCHRONOUS

85 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.005 Amp

DRAMs

165 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H256M4BT-37E:A by Micron Technology

MT47H256M4BT-37E:A

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 92; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B92

e1

19 mm

1073741824 bit

DDR2 DRAM

4

1

1

92

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA92,9X21,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

290 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

11 mm

MT47H256M4BT-5E:A by Micron Technology

MT47H256M4BT-5E:A

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 92; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.6 ns

AUTO/SELF REFRESH

200 MHz

COMMON

4,8

R-PBGA-B92

e1

19 mm

1073741824 bit

DDR2 DRAM

4

1

1

92

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA92,9X21,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

260 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

11 mm

MT47H32M8BP-5E:B by Micron Technology

MT47H32M8BP-5E:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.6 ns

AUTO/SELF REFRESH

200 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

268435456 bit

DDR2 DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.005 Amp

DRAMs

230 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT47H64M16BT-37E:A by Micron Technology

MT47H64M16BT-37E:A

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 92; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B92

e1

19 mm

1073741824 bit

DDR2 DRAM

16

1

1

92

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA92,9X21,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

340 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

11 mm

MT47H64M16BT-5E:A by Micron Technology

MT47H64M16BT-5E:A

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 92; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.6 ns

AUTO/SELF REFRESH

200 MHz

COMMON

4,8

R-PBGA-B92

e1

19 mm

1073741824 bit

DDR2 DRAM

16

1

1

92

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA92,9X21,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

330 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

11 mm

MT48LC16M8A2BB-75:G by Micron Technology

MT48LC16M8A2BB-75:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B60

e1

16 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

310 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC16M8A2BB-75IT:G by Micron Technology

MT48LC16M8A2BB-75IT:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B60

e1

16 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

310 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC16M8A2FB-7E:G by Micron Technology

MT48LC16M8A2FB-7E:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B60

e0

16 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

330 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48LC32M8A2BB-75:D by Micron Technology

MT48LC32M8A2BB-75:D

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B60

e1

16 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

125 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC32M8A2BB-75L:D by Micron Technology

MT48LC32M8A2BB-75L:D

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B60

e1

16 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

270 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H16M16BG-3E:B by Micron Technology

MT47H16M16BG-3E:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B84

e1

14 mm

268435456 bit

DDR2 DRAM

16

1

1

84

16777216 words

16M

SYNCHRONOUS

85 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.005 Amp

DRAMs

180 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H256M4BT-3:A by Micron Technology

MT47H256M4BT-3:A

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 92; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B92

e1

19 mm

1073741824 bit

DDR2 DRAM

4

1

1

92

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA92,9X21,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

300 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

11 mm

MT41J1G4THD-15E:D by Micron Technology

MT41J1G4THD-15E:D

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

667 MHz

COMMON

R-PBGA-B78

e1

11.5 mm

4294967296 bit

DDR3 DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

.024 Amp

DRAMs

337 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41J512M8THD-15E:D by Micron Technology

MT41J512M8THD-15E:D

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

667 MHz

COMMON

R-PBGA-B78

e1

11.5 mm

4294967296 bit

DDR3 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

.024 Amp

DRAMs

337 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41J512M8THD-187E:D by Micron Technology

MT41J512M8THD-187E:D

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.425 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

11.5 mm

4294967296 bit

DDR3 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Not Qualified

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT48LC32M8A2BB-75IT:D by Micron Technology

MT48LC32M8A2BB-75IT:D

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B60

e1

16 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

270 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT47H128M4CB-37E:B by Micron Technology

MT47H128M4CB-37E:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

4

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

225 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT47H128M4CB-3:B by Micron Technology

MT47H128M4CB-3:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

4

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

240 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT47H32M16CC-37E:B by Micron Technology

MT47H32M16CC-37E:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

340 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

12 mm

MT47H32M16CC-3:B by Micron Technology

MT47H32M16CC-3:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

350 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

12 mm

MT47H32M16CC-3E:B by Micron Technology

MT47H32M16CC-3E:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

350 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

12 mm

MT47H32M16CC-5E:B by Micron Technology

MT47H32M16CC-5E:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.6 ns

AUTO/SELF REFRESH

200 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

340 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

12 mm

MT47H64M8CB-37E:B by Micron Technology

MT47H64M8CB-37E:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

225 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT47H64M8CB-37V:B by Micron Technology

MT47H64M8CB-37V:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

267 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.006 Amp

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT47H64M8CB-3:B by Micron Technology

MT47H64M8CB-3:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

240 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT47H64M8CB-5E:B by Micron Technology

MT47H64M8CB-5E:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.6 ns

AUTO/SELF REFRESH

200 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

220 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT47H128M8BT-37EL:A by Micron Technology

MT47H128M8BT-37EL:A

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 92; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B92

e1

19 mm

1073741824 bit

DDR2 DRAM

8

1

1

92

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA92,9X21,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

290 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

11 mm

MT47H128M8BT-3L:A by Micron Technology

MT47H128M8BT-3L:A

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 92; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B92

e1

19 mm

1073741824 bit

DDR2 DRAM

8

1

1

92

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA92,9X21,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

300 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

11 mm

MT47H128M8BT-5EL:A by Micron Technology

MT47H128M8BT-5EL:A

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 92; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.6 ns

AUTO/SELF REFRESH

200 MHz

COMMON

4,8

R-PBGA-B92

e1

19 mm

1073741824 bit

DDR2 DRAM

8

1

1

92

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA92,9X21,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

260 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

11 mm