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TFBGA DRAM 587

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT41K512M4DA-107:K by Micron Technology

MT41K512M4DA-107:K

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.195 ns

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

933 MHz

COMMON

8

R-PBGA-B78

10.5 mm

2147483648 bit

DDR3L DRAM

4

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

164 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm

IS43LR32160C-6BLI by Integrated Silicon Solution

IS43LR32160C-6BLI

Integrated Silicon Solution

IS43LR32160C-6BLI by Integrated Silicon Solution is a 16MX32 DDR1 DRAM with 166 MHz clock frequency. Operating at 1.8V, it offers 5.5 ns access time and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

2,4,8,16

.00001 Amp

DRAMs

130 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

IS43TR16256A-125KBLI by Integrated Silicon Solution

IS43TR16256A-125KBLI

Integrated Silicon Solution

IS43TR16256A-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH and operates in industrial temperature grade range from -40 to 85 °C. Ideal for applications requiring high memory density and fast access times.

MULTI BANK PAGE BURST

.1 ns

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

R-PBGA-B96

13 mm

4294967296 bit

DDR3 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

IS43TR16256A-15HBLI by Integrated Silicon Solution

IS43TR16256A-15HBLI

Integrated Silicon Solution

IS43TR16256A-15HBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 4294967296 bit memory density. It operates synchronously at 1.5V, featuring self-refresh and industrial temperature grade. Ideal for applications requiring high-speed data processing in compact electronic devices.

MULTI BANK PAGE BURST

.125 ns

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

R-PBGA-B96

e1

13 mm

4294967296 bit

DDR3 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

IS43TR16256AL-125KBLI by Integrated Silicon Solution

IS43TR16256AL-125KBLI

Integrated Silicon Solution

IS43TR16256AL-125KBLI by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast access times in a compact grid array package.

MULTI BANK PAGE BURST

.1 ns

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

R-PBGA-B96

e1

13 mm

4294967296 bit

DDR3L DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

10

9 mm

IS43TR16256AL-125KBL by Integrated Silicon Solution

IS43TR16256AL-125KBL

Integrated Silicon Solution

IS43TR16256AL-125KBL by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast access times in a compact grid array package.

MULTI BANK PAGE BURST

.1 ns

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

R-PBGA-B96

e1

13 mm

4294967296 bit

DDR3L DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

10

9 mm

IS46TR16256AL-125KBLA2 by Integrated Silicon Solution

IS46TR16256AL-125KBLA2

Integrated Silicon Solution

IS46TR16256AL-125KBLA2 by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it offers 8192 refresh cycles and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing.

MULTI BANK PAGE BURST

.1 ns

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

800 MHz

COMMON

4,8

R-PBGA-B96

13 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

AEC-Q100

1.2 mm

YES

4,8

.016 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K1G8TRF-107:E by Micron Technology

MT41K1G8TRF-107:E

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.45 V; No. of Words Code: 1G;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

11.5 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9.5 mm

MT41K1G8TRF-125IT:E by Micron Technology

MT41K1G8TRF-125IT:E

Micron Technology

Micron Technology's MT41K1G8TRF-125IT:E is a DDR3L DRAM with 1GX8 organization, operating at 800 MHz. It features a thin profile grid array package and operates at 1.35V, suitable for applications requiring high-speed synchronous memory with low power consumption.

DUAL BANK PAGE BURST

.225 ns

SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e0

11.5 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.036 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

9.5 mm

MT41K2G4TRF-107:E by Micron Technology

MT41K2G4TRF-107:E

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Surface Mount: YES;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

11.5 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

2GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9.5 mm

MT41K1G4RH-107:E by Micron Technology

MT41K1G4RH-107:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

251 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K256M16HA-107:E by Micron Technology

MT41K256M16HA-107:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

274 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41K256M16HA-107IT:E by Micron Technology

MT41K256M16HA-107IT:E

Micron Technology

Micron Technology's MT41K256M16HA-107IT:E is a DDR3L DRAM with 256MX16 organization, operating at 933 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

274 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41K256M16RE-15EIT:D by Micron Technology

MT41K256M16RE-15EIT:D

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B96

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.02 Amp

DRAMs

285 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

10 mm

MT41K512M8RH-107:E by Micron Technology

MT41K512M8RH-107:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3L DRAM

8

3

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

251 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT41K512M8RH-107IT:E by Micron Technology

MT41K512M8RH-107IT:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

251 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K512M8RH-125IT:E by Micron Technology

MT41K512M8RH-125IT:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41K512M16TNA-107:E by Micron Technology

MT41K512M16TNA-107:E

Micron Technology

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Width: 16;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

934.5 MHz

COMMON

4,8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,6X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

4,8

1.283 V

1.45 V

1.283 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT41K512M16TNA-125IT:E by Micron Technology

MT41K512M16TNA-125IT:E

Micron Technology

Micron Technology's MT41K512M16TNA-125IT:E is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,6X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

1.283 V

DRAMs

1.425 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT41K128M16HA-15EIT:D by Micron Technology

MT41K128M16HA-15EIT:D

Micron Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.255 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B96

14 mm

2147483648 bit

DDR3L DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

425 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K256M8DA-107IT:K by Micron Technology

MT41K256M8DA-107IT:K

Micron Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Length: 10.5 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-PBGA-B78

10.5 mm

2147483648 bit

DDR3L DRAM

8

1

1

78

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT42L256M64D4EV-18WT:A by Micron Technology

MT42L256M64D4EV-18WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

533 MHz

COMMON

4,8,16

S-PBGA-B253

e1

11 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA253,17X17,20

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

1.2 mm

YES

4,8,16

.002 Amp

DRAMs

220 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

11 mm

MT42L256M64D4EV-25WT:A by Micron Technology

MT42L256M64D4EV-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B253

11 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA253,17X17,20

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

1.2 mm

YES

4,8,16

.002 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

W9751G6KB25I by Winbond Electronics

W9751G6KB25I

Winbond Electronics

W9751G6KB25I by Winbond Electronics is a DDR2 DRAM with 32MX16 organization, operating at up to 400 MHz. It features a 32M word code, operates at 1.8V, and has a max clock frequency of 400 MHz. Ideal for industrial applications requiring high-speed memory performance in a compact form factor.

FOUR BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.008 Amp

DRAMs

200 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H64M16HR-25E:HTR by Micron Technology

MT47H64M16HR-25E:HTR

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 64K;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B84

e1

12.5 mm

1048576 bit

DDR2 DRAM

16

1

1

84

65536 words

64K

SYNCHRONOUS

85 Cel

0 Cel

64KX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J128M16JT-093J:K by Micron Technology

MT41J128M16JT-093J:K

Micron Technology

DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words: 134217728 words; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

2147483648 bit

DDR3 DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

128MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

IS43TR16128B-15HBLI by Integrated Silicon Solution

IS43TR16128B-15HBLI

Integrated Silicon Solution

IS43TR16128B-15HBLI by Integrated Silicon Solution is a 128MX16 DDR3 DRAM with 667 MHz clock frequency. It operates asynchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

MULTI BANK PAGE BURST

.255 ns

AUTO/SELF REFRESH

667 MHz

COMMON

4,8

R-PBGA-B96

e1

13 mm

2147483648 bit

DDR3 DRAM

16

1

1

96

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.5

Not Qualified

8192

1.2 mm

YES

4,8

.014 Amp

DRAMs

286 mA

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

W971GG6KB25I by Winbond Electronics

W971GG6KB25I

Winbond Electronics

Winbond Electronics' W971GG6KB25I is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply, and 84 terminals in a grid array package. It operates synchronously with self-refresh capability and offers multi-bank page burst access mode. Ideal for high-speed memory applications requiring low power consumption and compact design.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.008 Amp

DRAMs

185 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT41K256M16HA-125IT:ETR by Micron Technology

MT41K256M16HA-125IT:ETR

Micron Technology

Micron Technology's MT41K256M16HA-125IT:ETR is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT47H128M8CF-3AAT:H by Micron Technology

MT47H128M8CF-3AAT:H

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

R-PBGA-B60

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT47H128M8SH-187E:M by Micron Technology

MT47H128M8SH-187E:M

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

533 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H256M4SH-25E:M by Micron Technology

MT47H256M4SH-25E:M

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

1073741824 bit

DDR2 DRAM

4

1

1

60

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H64M16NF-187E:M by Micron Technology

MT47H64M16NF-187E:M

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

533 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H128M4SH-25E:H by Micron Technology

MT47H128M4SH-25E:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

536870912 bit

DDR2 DRAM

4

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.01 Amp

DRAMs

150 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H32M16NF-187E:H by Micron Technology

MT47H32M16NF-187E:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

533 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.01 Amp

DRAMs

225 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H64M8SH-25EIT:H by Micron Technology

MT47H64M8SH-25EIT:H

Micron Technology

Micron Technology's MT47H64M8SH-25EIT:H is a DDR2 DRAM with 64MX8 organization, operating at 400 MHz. It features a 60-terminal grid array package, suitable for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

FOUR BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.01 Amp

DRAMs

150 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H1G4WTR-25E:C by Micron Technology

MT47H1G4WTR-25E:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B63

11.5 mm

4294967296 bit

DDR2 DRAM

4

1

1

63

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT47H512M8WTR-25E:C by Micron Technology

MT47H512M8WTR-25E:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B63

11.5 mm

4294967296 bit

DDR2 DRAM

8

1

1

63

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT48LC32M8A2BB-6A:G by Micron Technology

MT48LC32M8A2BB-6A:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

S-PBGA-B60

16 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC32M8A2BB-7E:G by Micron Technology

MT48LC32M8A2BB-7E:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

S-PBGA-B60

16 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC64M4A2BB-6A:G by Micron Technology

MT48LC64M4A2BB-6A:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Package Shape: SQUARE; Memory Density: 268435456 bit;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B60

16 mm

268435456 bit

SYNCHRONOUS DRAM

4

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX4

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT41K256M8DA-125AAT:K by Micron Technology

MT41K256M8DA-125AAT:K

Micron Technology

Micron Technology's MT41K256M8DA-125AAT:K is a DDR3L DRAM with 256MX8 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and is designed for automotive applications due to its AEC-Q100 screening level. The memory IC offers a memory density of 2147483648 bits and supports multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3L DRAM

8

1

1

78

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

AEC-Q100

1.2 mm

YES

8

.012 Amp

DRAMs

195 mA

1.45 V

1.283 V

1.35

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT47H128M8SH-25EAAT:M by Micron Technology

MT47H128M8SH-25EAAT:M

Micron Technology

Micron Technology's MT47H128M8SH-25EAAT:M is a DDR2 DRAM with 128MX8 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed performance. Ideal for applications requiring fast memory access in automotive electronics or industrial control systems.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B60

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

128MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT47H128M8SH-25EAIT:M by Micron Technology

MT47H128M8SH-25EAIT:M

Micron Technology

Micron Technology's MT47H128M8SH-25EAIT:M is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access such as automotive electronics or industrial control systems.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.2 mm

YES

4,8

.01 Amp

210 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT47H128M8HQ-3:ETR by Micron Technology

MT47H128M8HQ-3:ETR

Micron Technology

DDR2 DRAM; Temperature Grade: COMMERCIAL EXTENDED; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

11.5 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

Not Qualified

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL EXTENDED

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT47H128M8CF-187E:H by Micron Technology

MT47H128M8CF-187E:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

533 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

250 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H128M8CF-25:H by Micron Technology

MT47H128M8CF-25:H

Micron Technology

Micron Technology's MT47H128M8CF-25:H is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices with limited space and power constraints.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

210 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H128M8CF-25E:H by Micron Technology

MT47H128M8CF-25E:H

Micron Technology

Micron Technology's MT47H128M8CF-25E:H is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features a 1.8V supply voltage and offers 8192 refresh cycles. Ideal for applications requiring high-speed synchronous memory with a capacity of 1073741824 bits in a compact grid array package.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

210 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm