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MT47H128M8CF-25E:H

Micron Technology

MT47H128M8CF-25E:H by Micron Technology

Micron Technology's MT47H128M8CF-25E:H is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features a 1.8V supply voltage and offers 8192 refresh cycles. Ideal for applications requiring high-speed synchronous memory with a capacity of 1073741824 bits in a compact grid array package.

Median Price

$5.990

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

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NAC Semi

USA . 700 parts In-Stock

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$5.990

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Chip Stock

USA . 18,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 8,175 parts In-Stock

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Vyrian

USA . 6,677 parts In-Stock

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Flip Electronics

USA . 1,500 parts In-Stock

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Digiode

USA . 256 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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Bristol Electronics

USA . 25 parts In-Stock

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Sensible Micro Corp

USA . 25 parts In-Stock

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25

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Distributors (Availability)

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Andel Nordic

Denmark . 4,765 parts In-Stock

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$5.677

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$5.450

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$5.450

4,765

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$5.450

Ampacity Inc.

Singapore . 1,618 parts In-Stock

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$13.000

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AZTECH Wire

Italy . 1,006 parts In-Stock

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$14.350

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QUARKTWIN TECHNOLOGY LTD

USA . 22,224 parts In-Stock

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Perfect Parts

USA . 17,405 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,857 parts In-Stock

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RC Electronics

USA . 4,659 parts In-Stock

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Microchip USA

USA . 3,971 parts In-Stock

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Continental Prestige Electronics

USA . 2,826 parts In-Stock

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GreenTree Electronics

Israel . 1,815 parts In-Stock

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Argo Parts USA

USA . 1,786 parts In-Stock

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Corphita

USA . 1,268 parts In-Stock

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SIE Connect GmbH (Excess)

Germany . 1,175 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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S.R.D Solutions

India . 1,000 parts In-Stock

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Futuretech Components

Singapore . 793 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

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Cyclops Electronics Ltd (Excess)

UK . 30 parts In-Stock

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Overview

Unlock the power of high-quality DRAM technology with Micron Technology's MT47H128M8CF-25E:H. Designed for optimal performance, this DDR2 DRAM memory module offers reliability and efficiency in a compact package. Ideal for a wide range of applications, from consumer electronics to industrial equipment, this memory module ensures seamless operation and faster data processing. Trust Micron Technology to deliver cutting-edge solutions that elevate your products to the next level. Experience the value and benefits that only Micron can provide with the MT47H128M8CF-25E:H.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used in electronic components, providing durability and protection for the DRAM.

Surface Mount: YES

Ease of installation and integration into circuit boards.

Operating Mode: SYNCHRONOUS

Allows for synchronized data transfers, enhancing performance.

Nominal Supply Voltage / Vsup (V): 1.8

Efficient power usage at a standard voltage level.

Organization: 128MX8

Organized as 128 megabits in a x8 configuration, offering a good balance between capacity and data width.

Maximum Clock Frequency (fCLK): 400 MHz

Supports high-speed data processing, suitable for demanding applications.

Memory IC Type: DDR2 DRAM

DDR2 technology provides improved performance and efficiency compared to earlier versions.

Refresh Cycles: 8192

Efficient memory management with frequent auto-refresh cycles.

Technical Specifications

DRAM MT47H128M8CF-25E:H attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Access Time:

.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

400 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B60

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

60

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA60,9X11,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Sub-Category:

DRAMs

Maximum Supply Current:

210 mA

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

MT47H128M8CF-25E:H Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.32

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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