Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MT40A256M16GE-083EAAT:B
Micron Technology
Micron Technology's MT40A256M16GE-083EAAT:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 105°C.
MULTI BANK PAGE BURST
AUTO/SELF REFRESH
COMMON
8
R-PBGA-B96
e1
14 mm
4294967296 bit
DDR4 DRAM
16
1
96
268435456 words
256M
SYNCHRONOUS
105 Cel
-40 Cel
256MX16
3-STATE
PLASTIC/EPOXY
TFBGA
BGA96,9X16,32
RECTANGULAR
GRID ARRAY, THIN PROFILE, FINE PITCH
260
AEC-Q100
1.2 mm
YES
.059 Amp
1.14 V
71 mA
1.26 V
1.2
CMOS
INDUSTRIAL
Tin/Silver/Copper (Sn/Ag/Cu)
BALL
.8 mm
BOTTOM
30
9 mm
MT40A256M16GE-083EAIT:B
Micron Technology's MT40A256M16GE-083EAIT:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access.
95 Cel
.057 Amp
69 mA
MT40A256M16GE-083EAUT:B
Micron Technology's MT40A256M16GE-083EAUT:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package style.
125 Cel
.062 Amp
76 mA
AUTOMOTIVE
MT40A512M8RH-083EAAT:B
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .059 Amp;
R-PBGA-B78
10.5 mm
78
536870912 words
512M
512MX8
BGA78,9X13,32
58 mA
MT40A512M8RH-083EAIT:B
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS;
56 mA
MT40A512M8RH-083EAUT:B
DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
1200 MHz
63 mA
AS4C1G8MD3L-12BCN
Alliance Memory
Alliance Memory's AS4C1G8MD3L-12BCN is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. Featuring synchronous operation and self-refresh capability, it offers 1073741824 words of memory with a width of 8 bits. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.
AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
13.2 mm
8589934592 bit
DDR3L DRAM
3
1073741824 words
1G
85 Cel
0 Cel
1GX8
1.45 V
1.283 V
1.35
OTHER
W989D6DBGX6E
Winbond Electronics
W989D6DBGX6E by Winbond Electronics is a 32MX16 SDRAM with 536MB memory density. Operating at 1.8V, it offers synchronous self-refresh mode and fast access time of 5ns. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.
FOUR BANK PAGE BURST
5 ns
R-PBGA-B54
536870912 bit
SYNCHRONOUS DRAM
54
33554432 words
32M
32MX16
NOT SPECIFIED
1.025 mm
1.95 V
1.7 V
1.8
8 mm
MT41K512M16HA-125AIT:ATR
Micron Technology's MT41K512M16HA-125AIT:ATR is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in harsh environments.
512MX16
MT40A1G8WE-083EAAT:B
Micron Technology's MT40A1G8WE-083EAAT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type. With self-refresh capability and wide temperature range (-40°C to 105°C), it offers reliable performance in demanding environments.
12 mm
8192
.027 Amp
184 mA
MT40A4G4NRE-075E:B
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B78;
DUAL BANK PAGE BURST
SELF REFRESH
17179869184 bit
4
4294967296 words
4G
4GX4
MT40A512M16JY-075EAIT:B
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit;
1333 MHz
.025 Amp
262 mA
MT40A512M16JY-083EAAT:B
Micron Technology's MT40A512M16JY-083EAAT:B is a DDR4 DRAM with 512MX16 organization, operating at up to 1200 MHz. It features a thin profile grid array package and operates in synchronous mode with self-refresh capability. Ideal for applications requiring high-speed memory performance in automotive electronics and industrial systems.
.028 Amp
254 mA
MT40A512M16JY-083EAIT:B
Micron Technology's MT40A512M16JY-083EAIT:B is a DDR4 DRAM with 512MX16 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
252 mA
AS4C64M16D2A-25BCN
Alliance Memory's AS4C64M16D2A-25BCN is a 64MX16 DDR2 DRAM with 1.8V supply, operating from -40 to 85°C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.
R-PBGA-B84
12.5 mm
1073741824 bit
DDR2 DRAM
84
67108864 words
64M
64MX16
265
1.9 V
TIN SILVER COPPER
20
AS4C256M16D3B-12BIN
Alliance Memory's AS4C256M16D3B-12BIN is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. Featuring a package style of GRID ARRAY, it has a memory density of 4294967296 bit and operates at temperatures ranging from 0 to 85 °C. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.
13.5 mm
DDR3 DRAM
1.575 V
1.425 V
1.5
MT40A1G8SA-062E:E
Micron Technology's MT40A1G8SA-062E:E is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
11 mm
BGA78,6X13,32
65536
NO
7.5 mm
MT40A1G8SA-075:E
MT40A1G8SA-075:E by Micron Technology is a DDR4 DRAM with 1GX8 organization, 1073741824 words, and 8589934592 bit memory density. It operates synchronously, has self-refresh capability, and is commonly used in multi-bank page burst access mode applications.
MT40A2G4SA-062E:E
Micron Technology's MT40A2G4SA-062E:E is a DDR4 DRAM with 2GX4 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
2147483648 words
2G
2GX4
MT40A2G4SA-075:E
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;
MT40A512M16JY-062E:B
DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;
MT40A512M16LY-062E:E
Micron Technology's MT40A512M16LY-062E:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in various electronic devices.
IS43TR81024BL-107MBL
Integrated Silicon Solution
Integrated Silicon Solution's IS43TR81024BL-107MBL is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 8589934592 bits. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.
10
10 mm
MT41K64M16TW-107XIT:J
Micron Technology's MT41K64M16TW-107XIT:J is a DDR3L DRAM with 64MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. This thin-profile package has 96 terminals in a grid array style, making it ideal for multi-bank page burst access applications.
MT40A1G8WE-083EAIT:B
Micron Technology's MT40A1G8WE-083EAIT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics or industrial control systems.
182 mA
MT40A1G8WE-083EAUT:B
Micron Technology's MT40A1G8WE-083EAUT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O. The AEC-Q100 screening level makes it ideal for automotive and industrial environments.
.042 Amp
192 mA
MT40A512M16JY-083EAUT:B
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Length: 14 mm;
273 mA
MT61K256M32JE-12:A
SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Length: 14 mm;
R-PBGA-B180
SYNCHRONOUS GRAPHICS RAM
32
180
256MX32
1.2875 V
1.2125 V
1.25
.75 mm
MT61K256M32JE-13:A
SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;
1.3905 V
1.3095 V
MT61K256M32JE-14:A
Micron Technology's MT61K256M32JE-14:A is a 256MX32 DRAM with synchronous operation and self-refresh capability. It features a memory density of 8Gb, operates at 1.25V, and has a peak reflow temperature of 260°C. Ideal for applications requiring high-speed data processing in graphics systems or other memory-intensive tasks.
MT61M256M32JE-10N:A
SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;
SYNCHRONOUS GRAPHICS RAM MODULE
MT61M256M32JE-12N:A
SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words;
MT41J256M16HA-125:ETR
Micron Technology's MT41J256M16HA-125:ETR is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory density of 4Gb. Suitable for applications requiring high-speed data processing in devices like computers and servers.
MT41K256M8DA-107AIT:K
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;
2147483648 bit
256MX8
MT41K256M8DA-125AUT:K
Micron Technology's MT41K256M8DA-125AUT:K is a DDR3L DRAM with 256MX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for automotive applications due to its thin profile, fine pitch grid array package style, and wide temperature range from -40°C to 125°C.
MT61M256M32JE-12NIT:A
SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.25;
AS4C64M16D3LB-12BINTR
Alliance Memory's AS4C64M16D3LB-12BINTR is a DDR3L DRAM with 64MX16 organization and 1.35V nominal voltage. It operates in synchronous mode, has self-refresh capability, and is suitable for industrial applications requiring high memory density.
13 mm
IS42S16160J-7BL-TR
IS42S16160J-7BL-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it offers a max access time of 5.4ns and features self-refresh capability. Ideal for applications requiring high-speed memory performance in commercial temperature environments.
5.4 ns
S-PBGA-B54
268435456 bit
16777216 words
16M
70 Cel
16MX16
SQUARE
3.6 V
3 V
3.3
COMMERCIAL
IS43LD32640B-18BLI-TR
IS43LD32640B-18BLI-TR by Integrated Silicon Solution is a 64MX32 LPDDR2 DRAM with 67108864 words and 2147483648 bit memory density. Operating at 1.2V, it features synchronous mode, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact grid array package.
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
R-PBGA-B134
11.5 mm
LPDDR2 DRAM
134
64MX32
1.1 mm
1.3 V
.65 mm
IS43TR16512BL-125KBLI-TR
IS43TR16512BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for industrial applications requiring high memory density and fast data processing.
800 MHz
4,8
BGA96,6X16,32
.055 Amp
95 mA
IS43TR16128DL-107MBL
IS43TR16128DL-107MBL by Integrated Silicon Solution is a DDR3L DRAM with 128MX16 organization, operating at 934.58 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.
934.58 MHz
134217728 words
128M
128MX16
.016 Amp
216 mA
MT40A512M16LY-062EIT:E
Micron Technology's MT40A512M16LY-062EIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with multi-bank page burst access mode.
MT51J256M32HF-70:A
SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 170; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B170;
R-PBGA-B170
170
MT51J256M32HF-80:A
SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 170; Package Code: TFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
MT41K512M16VRN-107AIT:P
Micron Technology's MT41K512M16VRN-107AIT:P is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and fast data processing.
SINGLE BANK PAGE BURST
934.57 MHz
.022 Amp
304 mA
MT61K512M32KPA-14:B
Micron Technology's MT61K512M32KPA-14:B is a GDDR6 DRAM with 512MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin-profile devices.
AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V
GDDR6 DRAM
512MX32
BGA180,14X18,30
MT40A256M16LY-062E:F
Micron Technology's MT40A256M16LY-062E:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
MT40A256M16LY-062EIT:F
Micron Technology's MT40A256M16LY-062EIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in thin profile devices.
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