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4 Diodes & Rectifiers 109

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
STTH6112TV1 by STMicroelectronics

STTH6112TV1

STMicroelectronics

STTH6112TV1 by STMicroelectronics is an ultra-fast soft recovery rectifier diode with a max reverse recovery time of 0.115 µs and a peak reverse voltage of 1200 V. It operates efficiently in temperatures from -65 °C to 150°C, making it ideal for high-performance applications. With a compact flange mount design, it supports up to 30 A output current.

FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE

ULTRA FAST SOFT RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.8 V

R-PUFM-X4

e3

1

250 A

2

1

4

150 Cel

-65 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1200 V

150 uA

.115 us

1200 V

Other Diodes

NO

MATTE TIN

UNSPECIFIED

UPPER

STTH6112TV2 by STMicroelectronics

STTH6112TV2

STMicroelectronics

STTH6112TV2 by STMicroelectronics is an ultra-fast soft recovery rectifier diode with a max reverse recovery time of 0.115 µs and can handle up to 30 A output current. It operates efficiently in temperatures from -65 °C to 150°C, making it ideal for high-voltage applications. With a reverse test voltage of 1200 V, this diode ensures reliable performance in demanding environments.

FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE

ULTRA FAST SOFT RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.8 V

R-PUFM-X4

e3

1

250 A

2

1

4

150 Cel

-65 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1200 V

150 uA

.115 us

1200 V

Other Diodes

NO

MATTE TIN

UNSPECIFIED

UPPER

STTH120L04TV1 by STMicroelectronics

STTH120L04TV1

STMicroelectronics

STTH120L04TV1 from STMicroelectronics is a silicon rectifier diode with a max reverse recovery time of 0.05 µs and can handle up to 60 A output current. It operates b/w -55 °C and 150°C, making it ideal for high-performance applications in harsh environments. With a peak reverse voltage of 400 V, it's perfect for power conversion tasks.

GENERAL PURPOSE

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1 V

R-XUFM-X4

e3

1

600 A

2

1

4

150 Cel

-55 Cel

60 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

Not Qualified

400 V

500 uA

.05 us

400 V

Other Diodes

NO

MATTE TIN

UNSPECIFIED

UPPER

STTH200L04TV1 by STMicroelectronics

STTH200L04TV1

STMicroelectronics

STTH200L04TV1 by STMicroelectronics is a RECTIFIER DIODE with 2 ELEMENTS, offering 0.1 us Reverse Recovery Time and 1000 uA Reverse Current. It operates at -55 to 150 °C and has a Max Output Current of 120 A. Ideal for applications requiring high-speed rectification in electronic circuits.

GENERAL PURPOSE

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1 V

R-XUFM-X4

e3

1

900 A

2

1

4

150 Cel

-55 Cel

120 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

Not Qualified

400 V

1000 uA

.1 us

400 V

Other Diodes

NO

MATTE TIN

UNSPECIFIED

UPPER

STTH120R04TV1 by STMicroelectronics

STTH120R04TV1

STMicroelectronics

STTH120R04TV1 by STMicroelectronics is a fast recovery rectifier diode with 400V reverse test voltage, 0.08us reverse recovery time, and 60A max output current. Ideal for ultra-fast applications, it operates b/w -65°C to 150°C and features separate elements in a plastic package.

LOW LEAKAGE CURRENT

ULTRA FAST RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PUFM-X4

e3

1

700 A

2

1

4

150 Cel

-65 Cel

60 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

400 V

600 uA

.08 us

400 V

Other Diodes

NO

MATTE TIN

UNSPECIFIED

UPPER

STTH120R04TV2 by STMicroelectronics

STTH120R04TV2

STMicroelectronics

STTH120R04TV2 by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.08 µs and a peak reverse voltage of 400 V. It operates efficiently at temperatures from -65 °C to 150°C, handling up to 60 A. Ideal for high-speed switching applications, it features a flange mount design with four terminals.

LOW LEAKAGE CURRENT

ULTRA FAST RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PUFM-X4

e3

1

700 A

2

1

4

150 Cel

-65 Cel

60 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

400 V

600 uA

.08 us

400 V

Other Diodes

NO

MATTE TIN

UNSPECIFIED

UPPER

STTH61R04TV1 by STMicroelectronics

STTH61R04TV1

STMicroelectronics

STTH61R04TV1 by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.065 µs and a peak reverse voltage of 400 V. It operates efficiently at temperatures from -65 °C to 150°C, making it ideal for high-performance applications. With a max output current of 30 A, this diode ensures reliable performance in demanding environments.

LOW LEAKAGE CURRENT

ULTRA FAST RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PUFM-X4

350 A

2

1

4

150 Cel

-65 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

400 V

150 uA

.065 us

400 V

Other Diodes

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

STTH61R04TV2 by STMicroelectronics

STTH61R04TV2

STMicroelectronics

STTH61R04TV2 by STMicroelectronics is a fast recovery rectifier diode with 400V reverse test voltage, 0.065us reverse recovery time, and 30A max output current. Ideal for ultra-fast recovery applications, it operates b/w -65 to 150°C and features a matte tin terminal finish.

LOW LEAKAGE CURRENT

ULTRA FAST RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PUFM-X4

e3

1

350 A

2

1

4

150 Cel

-65 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

400 V

150 uA

.065 us

400 V

Other Diodes

NO

MATTE TIN

UNSPECIFIED

UPPER

STTH20003TV1 by STMicroelectronics

STTH20003TV1

STMicroelectronics

STTH20003TV1 by STMicroelectronics is a high voltage ultra-fast soft recovery diode with 300V reverse test voltage, 0.09us reverse recovery time, and 100A max output current. Ideal for applications requiring fast switching and high voltage capabilities in temperatures ranging from -55 to 150°C.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.95 V

R-PUFM-X4

e3

1

100 A

2

1

4

150 Cel

-55 Cel

100 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

300 V

200 uA

.09 us

300 V

Other Diodes

NO

MATTE TIN

UNSPECIFIED

UPPER

APT2X40DC60J by Microsemi

APT2X40DC60J

Microsemi

Microsemi APT2X40DC60J is a Schottky rectifier diode with 600V reverse test voltage and 4000uA max reverse current. Ideal for power applications, it has separate elements in a plastic/epoxy package with flange mount style. Operating from -55 to 150 °C, it offers high efficiency with 1.8V forward voltage and silicon carbide material.

LOW NOISE

POWER

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

500 A

2

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

600 V

4000 uA

600 V

Other Diodes

NO

SCHOTTKY

UNSPECIFIED

UPPER

NOT SPECIFIED

APT2X41DC60J by Microsemi

APT2X41DC60J

Microsemi

APT2X41DC60J by Microsemi is a Schottky rectifier diode with 600V reverse test voltage and 4000uA max reverse current. It has a package style of flange mount and is suitable for power applications, with an operating temperature range from -55 to 150 °C.

LOW NOISE

POWER

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

500 A

2

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

600 V

4000 uA

600 V

Other Diodes

NO

SCHOTTKY

UNSPECIFIED

UPPER

NOT SPECIFIED

APT2X51DC60J by Microsemi

APT2X51DC60J

Microsemi

APT2X51DC60J by Microsemi is a Schottky rectifier diode with 600V reverse test voltage and 1.8V max forward voltage. It has a package style of flange mount, suitable for power applications with an operating temperature range of -55 to 150°C. The diode features isolated case connection and silicon carbide element material, making it ideal for high-power circuits.

LOW NOISE

POWER

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

650 A

2

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

600 V

5000 uA

600 V

Other Diodes

NO

SCHOTTKY

UNSPECIFIED

UPPER

NOT SPECIFIED

APT2X60DC60J by Microsemi

APT2X60DC60J

Microsemi

APT2X60DC60J by Microsemi is a Schottky rectifier diode with 600V reverse test voltage and 1.8V max forward voltage. It has a package style of flange mount, suitable for power applications with an operating temperature range from -55 to 150°C. With isolated case connection and silicon carbide diode element material, it offers high performance in various power systems.

LOW NOISE

POWER

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

750 A

2

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

600 V

6000 uA

600 V

Other Diodes

NO

SCHOTTKY

UNSPECIFIED

UPPER

NOT SPECIFIED

APT2X61DC60J by Microsemi

APT2X61DC60J

Microsemi

APT2X61DC60J by Microsemi is a Schottky rectifier diode with 600V reverse test voltage and 1.8V max forward voltage. It has separate, 2-element configuration for power applications, operating b/w -55°C to 150°C. The diode features silicon carbide element material and can handle up to 750A non-repetitive peak forward current.

LOW NOISE

POWER

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

R-PUFM-X4

750 A

2

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

600 V

6000 uA

600 V

Other Diodes

NO

SCHOTTKY

UNSPECIFIED

UPPER

NOT SPECIFIED

STPS200170TV1Y by STMicroelectronics

STPS200170TV1Y

STMicroelectronics

STPS200170TV1Y by STMicroelectronics is a Schottky rectifier diode with 170V reverse test voltage and 100A max output current. Ideal for high voltage power applications, it operates b/w -40 to 175°C, featuring separate elements in a plastic package suitable for surface mount assembly.

LOW LEAKAGE CURRENT

HIGH VOLTAGE POWER

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.01 V

R-PUFM-X4

700 A

2

1

4

175 Cel

-40 Cel

100 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

AEC-Q101

170 V

200 uA

170 V

Other Diodes

YES

SCHOTTKY

NICKEL

UNSPECIFIED

UPPER

STTH6006TV1 by STMicroelectronics

STTH6006TV1

STMicroelectronics

STTH6006TV1 by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, featuring a max reverse recovery time of 0.07 µs and a peak reverse voltage of 600 V. It operates efficiently in temperatures from -55 °C to 150 °C. With a compact flange mount design, it supports applications requiring rapid switching and high current handling up to 30 A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.4 V

R-PUFM-X4

210 A

2

1

4

150 Cel

-55 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

600 V

800 uA

.07 us

600 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

STTH12002TV1 by STMicroelectronics

STTH12002TV1

STMicroelectronics

STTH12002TV1 by STMicroelectronics is a high-efficiency rectifier diode with a max reverse recovery time of 0.043 µs, handling up to 60 A output current. It operates b/w -55 °C and 150 °C, making it ideal for demanding applications. Its isolated case connection ensures reliable performance in various environments.

LOW LEAKAGE CURRENT

EFFICIENCY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.82 V

R-XUFM-X4

700 A

2

1

4

150 Cel

-55 Cel

60 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

Not Qualified

200 V

500 uA

.043 us

200 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

STTH6102TV1 by STMicroelectronics

STTH6102TV1

STMicroelectronics

STTH6102TV1 from STMicroelectronics is a high-efficiency rectifier diode with a max reverse recovery time of 0.03 µs, handling up to 30 A output current. It operates in temperatures from -55 °C to 150 °C and features a 200 V reverse test voltage. Ideal for applications requiring reliable performance in compact designs.

HIGH SURGE CAPABILITY

EFFICIENCY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.81 V

R-PUFM-X4

400 A

2

1

4

150 Cel

-55 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

200 V

250 uA

.03 us

200 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

STTH120L06TV1 by STMicroelectronics

STTH120L06TV1

STMicroelectronics

STTH120L06TV1 by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, featuring a max reverse recovery time of 0.105 µs and a peak reverse voltage of 600 V. It operates efficiently in temperatures from -55 °C to 150 °C. Ideal for applications requiring rapid switching and high current handling up to 60 A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.55 V

R-PUFM-X4

500 A

2

1

4

150 Cel

-55 Cel

60 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

600 V

500 uA

.105 us

600 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

STTH200L06TV1 by STMicroelectronics

STTH200L06TV1

STMicroelectronics

STTH200L06TV1 by STMicroelectronics is a high voltage ultra fast recovery diode with 600V reverse test voltage, 0.12us reverse recovery time, and 120A max output current. It is used in applications requiring efficient rectification at temperatures ranging from -55°C to 150°C.

HIGH VOLTAGE ULTRA FAST RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PUFM-X4

800 A

2

1

4

150 Cel

-55 Cel

120 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

600 V

1000 uA

.12 us

600 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

STTH60L06TV1 by STMicroelectronics

STTH60L06TV1

STMicroelectronics

STTH60L06TV1 by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, featuring a max reverse recovery time of 0.09 µs and a peak reverse voltage of 600 V. It operates efficiently at temperatures from -55 °C to 150 °C. Ideal for applications requiring rapid switching and high current handling up to 40 A.

HIGH VOLTAGE ULTRA FAST RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.25 V

R-PUFM-X4

210 A

2

1

4

150 Cel

-55 Cel

40 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

600 V

250 uA

.09 us

600 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

STTH12010TV1 by STMicroelectronics

STTH12010TV1

STMicroelectronics

STTH12010TV1 by STMicroelectronics is a diode with 1000V reverse test voltage, 0.115us reverse recovery time, and 60A max output current. Ideal for high voltage ultra fast soft recovery applications. Operating temp range -65 to 150 °C.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.7 V

R-PUFM-X4

400 A

2

1

4

150 Cel

-65 Cel

60 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1000 V

200 uA

.115 us

1000 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

STTH12012TV1 by STMicroelectronics

STTH12012TV1

STMicroelectronics

STTH12012TV1 by STMicroelectronics is a diode with 1200V reverse test voltage, 0.125us max reverse recovery time, and 60A max output current. Ideal for high voltage ultra fast soft recovery applications. Package style: flange mount, package body material: plastic/epoxy.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.9 V

R-PUFM-X4

420 A

2

1

4

150 Cel

-65 Cel

60 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1200 V

300 uA

.125 us

1200 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

STTH12012TV2 by STMicroelectronics

STTH12012TV2

STMicroelectronics

STTH12012TV2 by STMicroelectronics is a high-voltage ultra-fast soft recovery rectifier diode, featuring a max reverse voltage of 1200 V and a recovery time of just 0.125 µs. It operates efficiently in temperatures from -65 °C to 150 °C. Ideal for applications requiring rapid switching and high current handling up to 60 A.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.9 V

R-PUFM-X4

420 A

2

1

4

150 Cel

-65 Cel

60 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1200 V

300 uA

.125 us

1200 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

STTH20004TV1 by STMicroelectronics

STTH20004TV1

STMicroelectronics

STTH20004TV1 by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode with a max reverse recovery time of 0.1 µs, handling up to 120 A output current. It operates b/w -55 °C and 150 °C, featuring a 400 V reverse test voltage. Ideal for applications requiring efficient power management in compact designs.

HIGH VOLTAGE ULTRA FAST RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1 V

R-PUFM-X4

900 A

2

1

4

150 Cel

-55 Cel

120 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

400 V

1000 uA

.1 us

400 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

STTH6110TV1 by STMicroelectronics

STTH6110TV1

STMicroelectronics

STTH6110TV1 by STMicroelectronics is a diode with 1000V reverse test voltage, 0.1us reverse recovery time, and 30A max output current. It is used in high voltage ultra fast soft recovery applications due to its silicon diode element material and isolated case connection.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.7 V

R-PUFM-X4

240 A

2

1

4

150 Cel

-65 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1000 V

100 uA

.1 us

1000 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

STTH6110TV2 by STMicroelectronics

STTH6110TV2

STMicroelectronics

STTH6110TV2 by STMicroelectronics is a high voltage ultra-fast soft recovery diode with 1000V reverse test voltage and 30A max output current. It has 0.1us max reverse recovery time, ideal for applications requiring fast switching such as power supplies and inverters. Operating temp range: -65 to 150°C.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.7 V

R-PUFM-X4

240 A

2

1

4

150 Cel

-65 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1000 V

100 uA

.1 us

1000 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

STTH9012TV1 by STMicroelectronics

STTH9012TV1

STMicroelectronics

STTH9012TV1 by STMicroelectronics is a high-voltage ultra-fast soft recovery rectifier diode. It features a max reverse recovery time of 0.125 µs, supports up to 1200 V reverse voltage, and operates b/w -65 °C to 150 °C. Ideal for demanding power applications.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.8 V

R-PUFM-X4

420 A

2

1

4

150 Cel

-65 Cel

45 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1200 V

300 uA

.125 us

1200 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

STTH12004TV1 by STMicroelectronics

STTH12004TV1

STMicroelectronics

STTH12004TV1 by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, featuring a max reverse recovery time of 0.09 µs and a peak reverse voltage of 400 V. It operates efficiently in temperatures from -55 °C to 150 °C. With a robust design, it supports applications requiring rapid switching and high current handling up to 60 A.

HIGH VOLTAGE ULTRA FAST RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1 V

R-PUFM-X4

600 A

2

1

4

150 Cel

-55 Cel

60 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

400 V

500 uA

.09 us

400 V

Other Diodes

NO

NICKEL

UNSPECIFIED

UPPER

APT2X20DC120J by Microsemi

APT2X20DC120J

Microsemi

APT2X20DC120J by Microsemi is a Schottky rectifier diode with 2 elements, 1200V reverse test voltage, and 2000uA max reverse current. It is used in applications requiring high efficiency power conversion, such as in power supplies and inverters. Operating temperature ranges from -55 to 150°C make it suitable for various environments.

LOW NOISE

GENERAL PURPOSE

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.8 V

R-PUFM-X4

250 A

2

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

1200 V

2000 uA

1200 V

Other Diodes

NO

SCHOTTKY

UNSPECIFIED

UPPER

NOT SPECIFIED

STTH60L06TV2 by STMicroelectronics

STTH60L06TV2

STMicroelectronics

STTH60L06TV2 by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode with a max reverse recovery time of 0.09 µs, reverse voltage of 600 V, and forward current capacity of 40 A. It operates in temperatures from -55 °C to 150 °C. Ideal for applications requiring efficient power management in compact designs.

HIGH VOLTAGE ULTRA FAST RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.25 V

R-PUFM-X4

e3

1

210 A

2

1

4

150 Cel

-55 Cel

40 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

600 V

250 uA

.09 us

600 V

Other Diodes

NO

MATTE TIN

UNSPECIFIED

UPPER

DD1200S12H4HOSA1 by Infineon Technologies

DD1200S12H4HOSA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: UNSPECIFIED; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

GENERAL PURPOSE

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

2.35 V

R-PUFM-X4

1

2

1

4

150 Cel

-40 Cel

1200 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

IEC-61140; UL APPROVED

1200 V

NO

UNSPECIFIED

UPPER

IDL04G65C5XUMA1 by Infineon Technologies

IDL04G65C5XUMA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

HIGH RELIABILITY, PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.7 V

S-PSSO-N4

e3

21 A

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

62 W

650 V

70 uA

YES

SCHOTTKY

TIN

NO LEAD

SINGLE

IDL06G65C5XUMA1 by Infineon Technologies

IDL06G65C5XUMA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

HIGH RELIABILITY, PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.7 V

S-PSSO-N4

e3

29 A

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

78 W

650 V

110 uA

YES

SCHOTTKY

TIN

NO LEAD

SINGLE

IDL08G65C5XUMA1 by Infineon Technologies

IDL08G65C5XUMA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

HIGH RELIABILITY, PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.7 V

S-PSSO-N4

e3

36 A

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

96 W

650 V

140 uA

YES

SCHOTTKY

TIN

NO LEAD

SINGLE

IDL12G65C5XUMA1 by Infineon Technologies

IDL12G65C5XUMA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

HIGH RELIABILITY, PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.7 V

S-PSSO-N4

e3

50 A

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

138 W

650 V

190 uA

YES

SCHOTTKY

TIN

NO LEAD

SINGLE

DD500S33HE3BPSA1 by Infineon Technologies

DD500S33HE3BPSA1

Infineon Technologies

Infineon's DD500S33HE3BPSA1 is a rectifier diode with 3300V peak reverse voltage and 500A output current. It operates b/w -40°C to 150°C, making it suitable for high-power applications. The package style is flange mount with isolated case connection, ideal for industrial use.

GENERAL PURPOSE

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

3.85 V

R-PUFM-X4

2

1

4

150 Cel

-40 Cel

500 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

3300 V

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

RB480Y-90T2R by ROHM

RB480Y-90T2R

ROHM

RB480Y-90T2R by ROHM is a Schottky rectifier diode with 90V reverse test voltage and 0.69V forward voltage, suitable for applications requiring low power consumption. With a max output current of 0.1A and operating temperature range from -40 to 125°C, it is ideal for compact electronic devices needing efficient power management in a small outline package.

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.69 V

R-PDSO-F4

2

4

125 Cel

-40 Cel

.1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

90 V

5 uA

90 V

Other Diodes

YES

SCHOTTKY

FLAT

DUAL

NOT SPECIFIED

RB480Y-40T2R by ROHM

RB480Y-40T2R

ROHM

RB480Y-40T2R by ROHM is a Schottky rectifier diode with 40V reverse test voltage and 0.39V max forward voltage. It has 2 elements, operates b/w -40 to 125 °C, and supports 0.1A output current. Ideal for applications requiring high-speed switching in compact electronic devices.

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.39 V

R-PDSO-F4

2

4

125 Cel

-40 Cel

.1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

40 V

10 uA

40 V

Other Diodes

YES

SCHOTTKY

FLAT

DUAL

NOT SPECIFIED

RB851YT2R by ROHM

RB851YT2R

ROHM

RB851YT2R by ROHM is a Schottky rectifier diode with 2 elements, max output current of 0.03A, and max forward voltage of 0.46V. Ideal for applications requiring low reverse current and high operating temperatures like power supplies and battery chargers.

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.46 V

R-PDSO-F4

2

4

125 Cel

-40 Cel

.03 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3 V

.7 uA

1 V

Other Diodes

YES

SCHOTTKY

FLAT

DUAL

NOT SPECIFIED

DD800S17H4B2BOSA2 by Infineon Technologies

DD800S17H4B2BOSA2

Infineon Technologies

Infineon's DD800S17H4B2BOSA2 is a RECTIFIER DIODE with 1700V peak reverse voltage, 800A output current, and 2.1V forward voltage. It is used in applications requiring high power rectification such as industrial power supplies and motor drives due to its isolated case connection and separate dual-element configuration.

GENERAL PURPOSE

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

2.1 V

R-XUFM-X4

1

2

1

4

150 Cel

-40 Cel

800 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

1700 V

NO

UNSPECIFIED

UPPER

IDL10G65C5XUMA2 by Infineon Technologies

IDL10G65C5XUMA2

Infineon Technologies

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

HIGH RELIABILITY, PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.7 V

S-PSSO-N4

e3

3

43 A

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

113 W

650 V

180 uA

YES

SCHOTTKY

TIN

NO LEAD

SINGLE

DD1200S45KL3B5NOSA1 by Infineon Technologies

DD1200S45KL3B5NOSA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: UNSPECIFIED; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

MEDIUM VOLTAGE HIGH POWER

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

R-XUFM-X4

2

1

4

125 Cel

-50 Cel

1200 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

4500 V

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

DD800S45KL3B5NPSA1 by Infineon Technologies

DD800S45KL3B5NPSA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: UNSPECIFIED; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

HIGH POWER MEDIUM VOLTAGE

ISOLATED

SERIES CONNECTED, 2 ELEMENTS

SILICON

RECTIFIER DIODE

3.1 V

R-PUFM-X4

2

1

4

125 Cel

-50 Cel

800 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

IEC-1287; IEC-61140; UL APPROVED

4500 V

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

STTH200F04TV1 by STMicroelectronics

STTH200F04TV1

STMicroelectronics

STTH200F04TV1 by STMicroelectronics is a RECTIFIER DIODE with 400V peak reverse voltage, 0.095us reverse recovery time, and 75uA reverse current. It is used in high voltage ultra-fast recovery applications due to its isolated case connection and flange mount package style.

SOFT FACTOR IS 0.3

HIGH VOLTAGE ULTRA FAST RECOVERY

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.5 V

R-PUFM-X4

1000 A

2

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

400 V

75 uA

.095 us

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

VS-QA300FA17 by Vishay Intertechnology

VS-QA300FA17

Vishay Intertechnology

VS-QA300FA17 by Vishay Intertechnology is a Schottky rectifier diode with 2 elements, max output current of 300A, and reverse test voltage of 170V. Ideal for applications requiring high power dissipation and fast recovery time in electronics.

PD-CASE

GENERAL PURPOSE

170 V

ISOLATED

SEPARATE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.98 V

R-PUFM-X4

1575 A

2

1

4

175 Cel

-55 Cel

300 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

327 W

UL APPROVED

170 V

200 uA

.071 us

170 V

YES

SCHOTTKY

UNSPECIFIED

UPPER

NHP620LFST1G by Onsemi

NHP620LFST1G

Onsemi

NHP620LFST1G by Onsemi is a single rectifier diode with a max reverse current of 0.75 uA and a max output current of 6 A. It operates in temperatures ranging from -55 to 175 °C and is ideal for ultra-fast soft recovery power applications.

FREE WHEELING DIODE

ULTRA FAST SOFT RECOVERY POWER

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1 V

R-PSSO-G4

e3

1

120 A

1

1

4

175 Cel

-55 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

.75 uA

200 V

YES

MATTE TIN

GULL WING

SINGLE

30

NHP820LFST1G by Onsemi

NHP820LFST1G

Onsemi

NHP820LFST1G by Onsemi is a single diode with a max reverse recovery time of 0.035 us and max reverse current of 1 uA. It is designed for ultra-fast soft recovery power applications, operating b/w -55 to 175 °C, with a peak reflow temperature of 260 °C.

FREE WHEELING DIODE

ULTRA FAST SOFT RECOVERY POWER

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1 V

R-PSSO-G4

e3

1

175 A

1

1

4

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

1 uA

.035 us

200 V

YES

MATTE TIN

GULL WING

SINGLE

30