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STTH12002TV1

STMicroelectronics

STTH12002TV1 by STMicroelectronics

STTH12002TV1 by STMicroelectronics is a high-efficiency rectifier diode with a max reverse recovery time of 0.043 µs, handling up to 60 A output current. It operates b/w -55 °C and 150 °C, making it ideal for demanding applications. Its isolated case connection ensures reliable performance in various environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,508 parts In-Stock

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7,508

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Digiode

USA . 1,004 parts In-Stock

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1,004

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Anansix

USA . 246 parts In-Stock

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Sunrise Surplus Inc.

USA . 4 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 141 parts In-Stock

1+ parts

$0.157

100+ parts

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$0.142

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141

$0.157

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$0.142

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MKK Technologies

India . 1,604 parts In-Stock

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$0.296

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$0.296

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DigiPath Technology Company

USA . 1,604 parts In-Stock

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$0.296

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1,604

$0.296

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AZTECH Wire

Italy . 653 parts In-Stock

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$12.190

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653

$12.190

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Corphita

USA . 2,034 parts In-Stock

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Parana Technologies

USA . 349 parts In-Stock

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$0.188

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349

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$0.188

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Overview

Elevate your designs with the STTH12002TV1 diode from STMicroelectronics, a leader in semiconductor innovation. This robust rectifier diode ensures exceptional efficiency and reliability, making it ideal for demanding applications where quality matters. With superior thermal performance and a compact design, it seamlessly integrates into your systems, delivering consistent output under extreme conditions. Trust STMicroelectronics for unmatched durability and performance that drive your projects forward!

Feature Benefit Bullets

Configuration: SEPARATE, 2 ELEMENTS

The separate configuration allows for enhanced thermal performance and flexibility in circuit design, making it suitable for a variety of applications.

Maximum Reverse Recovery Time: 0.043 us

A low reverse recovery time ensures minimal switching losses, enhancing overall efficiency and making this diode ideal for high-frequency applications.

Maximum Reverse Current: 500 uA

This low reverse current contributes to better power efficiency and reliability under reverse-biased conditions, ensuring long-term performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for easier mounting and integration into existing designs, optimizing space usage.

Reverse Test Voltage: 200 V

A higher reverse test voltage indicates reliable performance in high voltage applications, making this diode suitable for demanding environments.

Number of Terminals: 4

Having 4 terminals provides flexibility in design and more robust connections, enhancing the overall performance of the diode.

Package Style (Meter): FLANGE MOUNT

Flange mounting offers secure positioning and enhanced thermal dissipation, ensuring stable operation in high-power applications.

Application: EFFICIENCY

Designed with efficiency in mind, this diode minimizes losses and maximizes overall performance, suitable for applications requiring energy conservation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can handle extreme conditions, ensuring reliability in harsh environments.

Minimum Operating Temperature: -55 °C

This wide temperature range ensures that the diode remains functional in cold climates and harsh industrial settings.

Terminal Finish: NICKEL

Nickel terminal finish provides excellent corrosion resistance and enhances the longevity of connections, ensuring reliable performance.

Terminal Position: UPPER

Upper terminal positioning facilitates easy access for connections, streamlining installation processes.

Case Connection: ISOLATED

An isolated case connection prevents unwanted current leakage, ensuring safer operation and protecting sensitive components.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential for power supply and conversion applications.

Maximum Forward Voltage (VF): 0.82 V

A low forward voltage drop minimizes energy losses during operation, improving the efficiency of power conversion circuits.

Maximum Output Current: 60 A

A high output current rating makes this diode suitable for high-power applications, ensuring it meets the demands of robust designs.

Number of Elements: 2

Having two elements allows for more effective current handling and improved efficiency in rectification processes.

Maximum Repetitive Peak Reverse Voltage: 200 V

This feature provides a safe margin for high-voltage applications, ensuring the diode can withstand transient events.

Maximum Non-Repetitive Peak Forward Current: 700 A

High non-repetitive forward current capability indicates resilience to surges, enhancing reliability in fluctuating power conditions.

Diode Element Material: SILICON

Silicon is widely recognized for its excellent electrical properties, making this diode a dependable choice for various applications.

Technical Specifications

Diodes & Rectifiers STTH12002TV1 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.82 V

JESD-30 Code:

R-XUFM-X4

Maximum Non Repetitive Peak Forward Current:

700 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

60 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

500 uA

Maximum Reverse Recovery Time:

.043 us

Reverse Test Voltage:

200 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

STTH12002TV1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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